JP6818681B2 - 気化温度が低い材料および高い材料の同時蒸着、およびその中で製造されるデバイス - Google Patents
気化温度が低い材料および高い材料の同時蒸着、およびその中で製造されるデバイス Download PDFInfo
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
OVPD:有機気相蒸着
HTM:高温気化材料
LTM:低温気化材料
DTDCPB:2−[(7−{4−[N,N−ビス(4−メチルフェニル)アミノ]フェニル}−2,1,3−ベンゾチアジアゾール−4−イル)メチレン]プロパンジニトリル
Bphen:バトフェナントロリン
ITO:インジウム錫オキシド
VTE:真空熱蒸着。
図6CのLTM濃度プロットは、前記主反応器512の上部から前記LTMの流れが前記シャワーヘッド607の入り口に近づき、前記基板510に凝縮することを示す。同様にして、図6Dに示すように、前記シャワーヘッド607からの注入されたHTMの流れはHTMが基板510に近づくにつれて希釈される。
本発明の明細書および実施例は例示のみとして考慮され、本発明の真の範囲や趣旨は後述の請求項に提示される。
Claims (14)
- 主反応器壁によって規定される主反応器と;
少なくとも、第1の有機蒸気を前記主反応器に導入するように構成された、第1のソースバレルと;第2の有機蒸気を前記主反応器に導入するように構成された、第2のソースバレルと;
前記主反応器内に設置された基板ステージ;と
キャリアガスを前記主反応器壁に沿って導入するように構成された、少なくとも1つのキャリアガス注入路と、を有し、
前記第1のソースバレルが第1のソースバレル温度に個別に制御されるように構成され、前記第2のソースバレルが第2のソースバレル温度に個別に制御されるよう構成されるとともに、前記主反応器壁は主反応器壁の温度が前記第1のソースバレル温度より高く、かつ、前記第2のソースバレル温度より低くなるように個別に制御され、
前記少なくとも1つのキャリアガス注入路は、前記2つの有機蒸気が前記主反応器に注入される位置より上部で、前記キャリアガスを前記主反応器壁に沿って導入し始め、
前記主反応器壁に沿ったキャリアガスの前記導入が、前記基板ステージに向けて前記第1および第2の有機蒸気が流れるときに前記第2の有機蒸気の前記主反応器壁上での凝縮を低減するように構成される、有機気相蒸着システム。 - 前記第1のソースバレルは、第1のソースバレルの温度が150℃〜250℃の範囲に個別に制御されるように構成され、前記第2のソースバレルは、第2のソースバレルの温度が450℃〜550℃の範囲に個別に制御されるように構成されるとともに、前記主反応器壁は、主反応器壁の温度が250℃〜350℃の範囲に個別に制御されるように構成される、請求項1に記載のシステム。
- 前記第1および第2のソースバレルの温度が、前記第1および第2のソースバレルの少なくとも一部分を取り囲むコイルを加熱することで個別に制御される、請求項1に記載のシステム。
- 前記少なくとも1つのキャリアガス注入路が環状で前記主反応器壁に向けて同心円状に広がる、請求項1に記載のシステム。
- 前記キャリアガスはアルゴンガスおよび窒素ガスの少なくとも1つを含む、請求項1に記載のシステム。
- 前記第1のソースバレルが約200℃の第1のソースバレルの温度に個別に制御されるように構成され、前記第2のソースバレルが約500℃の第2のソースバレルの温度に個別に制御されるように構成されるとともに、前記主反応器壁が約300℃の主反応器壁の温度に制御される、請求項2に記載のシステム。
- 前記第1および第2のソースバレルは、前記第1および第2の有機蒸気が約20sccmで前記主反応器に供給され、かつ、前記少なくとも1つのキャリアガス注入路が前記キャリアガスを前記主反応器に約20sccmで導入するように構成される、請求項1に記載のシステム。
- 垂直の向きに設置され、前記第1および第2の有機蒸気が前記基板ステージの上部の前記主反応器に導入される、請求項1に記載のシステム。
- 第1の有機蒸気を第1の温度で主反応器壁によって規定される主反応器に導入し;
第2の有機蒸気を、前記第1の温度より高い、第2の温度で前記主反応器に導入し;
キャリアガスを前記主反応器壁の内表面に沿うように前記主反応器に供給する;
工程を含み、
前記主反応器は、主反応器壁の温度が前記第1の温度より高く、かつ、前記第2の温度より低くなるように制御され、
前記キャリアガスの導入を、前記第1の有機蒸気および前記第2の有機蒸気が前記主反応器に導入される位置よりも上部で開始し、
前記主反応器壁に沿うキャリアガスの前記導入が、前記主反応器を通じて基板に向けて前記第1および第2の有機蒸気が流れるときに前記第2の有機蒸気の前記主反応器壁上での凝縮を低減するように構成される、有機気相蒸着法を用いて有機膜を製造する方法。 - 前記第1の温度は150〜250℃の範囲であり、前記第2の温度は450〜550℃の範囲であり、前記主反応器壁の温度は250〜350℃の範囲である、請求項9に記載の方法。
- 前記第1の有機蒸気を前記第1の温度に、前記第2の有機蒸気を前記第2の温度に、第1のソースバレルおよび第2のソースバレルを囲む加熱コイルを用いて個別に制御することをさらに含む、請求項9に記載の方法。
- 前記キャリアガスがアルゴンガスおよび窒素ガスの少なくとも1つを含む、請求項9に記載の方法。
- 前記第1の有機蒸気および第2の有機蒸気をそれぞれ前記主反応器に約20sccmで導入するとともに、前記キャリアガスを約20sccmで供給する、請求項9に記載の方法。
- 前記キャリアガスを、前記主反応器壁に同心円状に延びる環状のキャリアガス注入路から供給する、請求項9に記載の方法。
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JP2020218793A JP7340261B2 (ja) | 2014-12-11 | 2020-12-28 | 気化温度が低い材料および高い材料の同時蒸着、およびその中で製造されるデバイス |
JP2023112293A JP2023145490A (ja) | 2014-12-11 | 2023-07-07 | 気化温度が低い材料および高い材料の同時蒸着、およびその中で製造されるデバイス |
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PCT/US2015/065163 WO2016094755A1 (en) | 2014-12-11 | 2015-12-11 | Organic vapor phase deposition system and methods of use for simultaneous deposition of low and high evaporation temperature materials, and devices produced therein |
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JP2020218793A Active JP7340261B2 (ja) | 2014-12-11 | 2020-12-28 | 気化温度が低い材料および高い材料の同時蒸着、およびその中で製造されるデバイス |
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JP2004010989A (ja) * | 2002-06-10 | 2004-01-15 | Sony Corp | 薄膜形成装置 |
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US8440021B2 (en) * | 2007-08-16 | 2013-05-14 | The Regents Of The University Of Michigan | Apparatus and method for deposition for organic thin films |
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JP7340261B2 (ja) | 2023-09-07 |
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