JP6817320B2 - 銅−セラミックス複合材料 - Google Patents
銅−セラミックス複合材料 Download PDFInfo
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- JP6817320B2 JP6817320B2 JP2018544127A JP2018544127A JP6817320B2 JP 6817320 B2 JP6817320 B2 JP 6817320B2 JP 2018544127 A JP2018544127 A JP 2018544127A JP 2018544127 A JP2018544127 A JP 2018544127A JP 6817320 B2 JP6817320 B2 JP 6817320B2
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- copper
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- composite material
- ceramic substrate
- ceramic
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- 239000000919 ceramic Substances 0.000 title claims description 174
- 239000002131 composite material Substances 0.000 title claims description 63
- 239000002245 particle Substances 0.000 claims description 183
- 239000010949 copper Substances 0.000 claims description 149
- 239000000758 substrate Substances 0.000 claims description 127
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 118
- 229910052802 copper Inorganic materials 0.000 claims description 95
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 63
- 238000009826 distribution Methods 0.000 claims description 63
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 59
- 238000000576 coating method Methods 0.000 claims description 49
- 239000011248 coating agent Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 33
- 239000011889 copper foil Substances 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 18
- 230000035939 shock Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000010561 standard procedure Methods 0.000 description 6
- 238000000879 optical micrograph Methods 0.000 description 5
- 238000005457 optimization Methods 0.000 description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000001247 metal acetylides Chemical class 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
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- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
Description
− セラミック基板と、
− 前記セラミック基板上に存在し、粒子サイズが10μmから300μmの範囲内である銅又は銅合金からなる被膜と、
を有する上記銅−セラミックス複合材料により達成される。
4.0≧(d95−d5)/d50≧0.5。
− 銅箔を酸化して、表面に酸化銅層を形成する;
− 酸化銅層を形成した銅箔をセラミック基板に載せる;
− 複合材料を<1083℃の温度(例えば1065℃から1080℃の温度範囲内)で加熱する;
− 室温まで冷却する。
9.5≧(d95−d5)/d50≧0.7。
0.7≦S(Al2O3)/S(Cu)≦1.4。
0.74≦S(Al2O3)/S(Cu)≦1.35;
さらに好ましくは以下の条件を満たす:
0.80≦S(Al2O3)/S(Cu)≦1.25。
0.5≦Ra(Al2O3)/Ra(Cu)≦2.0。
0.75≦Ra(Al2O3)/Ra(Cu)≦1.5;
また、さらに好ましくは、
0.80≦Ra(Al2O3)/Ra(Cu)≦1.20
である。
これにより、銅−セラミックス複合材料の耐熱衝撃性のさらなる最適化を実現することができる。
dmax(Cu)に対するdmin(Al2O3)の比及びdmin(Cu)に対するdmax(Al2O3)の比が、以下の(i)及び(ii)を満たす:
(i) dmin(Al2O3)/dmax(Cu)≧1x10−5;
(ii) 2.5≧dmax(Al2O3)/dmin(Cu)。
(i) dmin(Al2O3)/dmax(Cu)≧0.001;
(ii) 1.5≧dmax(Al2O3)/dmin(Cu);
最も好ましくは以下の(i)及び(ii)を満たす:
(i) dmin(Al2O3)/dmax(Cu)≧0.002;
(ii) 1.0≧dmax(Al2O3)/dmin(Cu)。
(i) 0.005≧dmin(Al2O3)/dmax(Cu)≧0.002、かつ
(ii) 1.0≧dmax(Al2O3)/dmin(Cu)≧0.05
である。
銅又は銅合金からなる被膜の表面の光学顕微鏡写真を撮る(被覆された基板表面と平行)。研磨切片の形態の特別な試料調製は不要である。
上記のように、また当業者に公知であるように、しばしば中央値とも呼ばれるd50は、以下のように定義される:50%の粒子の直径がd50よりも小さい。同様に、d5とは、5%の粒子の直径がd5よりも小さいことであり、d95とは、95%の粒子の直径がd95よりも小さいことである。
セラミック基板の表面の走査顕微鏡写真(SEM像)を撮影する。研磨切片の形態の特別な試料調製は不要である。SEM像は、セラミック基板の銅で覆われていた箇所をエッチングにより露出させて撮影する。
(銅、銅合金)
粒子サイズ分布の測定に用いた光学顕微鏡写真を用いる。
最も長い寸法dK,maxを求める。続いて、dK,maxの長さを半分にする箇所においてdK,maxに直交する粒子径dK,orthoを求める。個々の粒子RKの形状係数は、dK,maxに対するdK,orthoの比、すなわちRK=dK,ortho/dK,maxとして得られる。
図4に、楕円形の粒子構造を持つ粒子についてこれを模式的に示す。粒子の形状の2次元投影が円形に近づくにつれ、粒子の形状係数の値は1.0に近づく。したがって、形状係数は、粒子の真円度(Kreisfoermigkeit)/円形度(rundheit)の尺度でもある。
粒子サイズ分布の測定に用いたSEM像を用いる。
このために、最初にセラミック基板を支持体に載置し、次いで上面、すなわち支持体とは反対側を銅箔で覆う。熱の作用によりセラミック基板のこの面に金属層が接合され、次いで得られたものを冷却する。
続いて、基板を裏返し、第2のボンディング工程により同様にして他の面に金属層、すなわち銅箔を設ける。
銅−セラミックス複合材料1、以下「K−K−V1」と称する(本発明)
銅−セラミックス複合材料2、以下「K−K−V2」と称する(比較試料)
銅−セラミックス複合材料3、以下「K−K−V3」と称する(比較試料)
銅−セラミックス複合材料2、以下「K−K−V4」と称する(比較試料)
銅−セラミックス複合材料3、以下「K−K−V5」と称する(比較試料)
試料K−K−V1からK−K−V5の粒子サイズ分布の粒子サイズ範囲及び対称性値を表1に示す。
銅−セラミック基板の耐熱衝撃性を測定には、単基板を好ましくは大型基板から分割する。単基板を、当業者に公知の装置にて以下の温度変化サイクルに供した:
− 150℃(好ましくは温度変化キャビネットの第1室)で15分保管
− −40℃(マイナス40℃)(好ましくは温度変化キャビネットの第2室)で15分保管
− ある室から他の室への移動における移動時間は15秒とした。
銅−セラミック基板のワイヤーボンディング特性の測定には、単基板を好ましくは大型基板から分割する。ワイヤー(実施例では銅線、例えば当業者に公知な方法による。)を、当業者に公知の装置にて、単基板の銅−セラミック基板の銅表面に貼り付けた。本発明において、本発明に従って製品パラメータとそれに続くDCB法を選択すると、試料K−K−V1では、試料K−K−V2及びK−K−V3と比べてワイヤーボンディング特性が有意に改善されることを実証することができた。
Claims (10)
- 銅−セラミックス複合材料であって、
− セラミック基板と、
− 前記セラミック基板上に直接存在し、銅又は銅合金からなる被膜と、を有し、
前記銅又は銅合金は、
− 最小粒子サイズ(dmin(Cu))が≧10μmであり、かつ、最大粒子サイズ(dmax(Cu))が≦300μmであり、
− 粒子サイズの数分布における中央値d50及び算術平均darithについて、darithに対するd50の比(d50/darith)が0.75から1.10の範囲内である、
上記銅−セラミックス複合材料。 - darithに対するd50の比(d50/darith)が0.78から1.05の範囲内、より好ましくは0.80から1.00の範囲内である、請求項1に記載の銅−セラミックス複合材料。
- 前記銅又は銅合金は、粒子サイズの数分布におけるd5及びd95について、d95に対するd5の比が、0.1から0.4の範囲内、より好ましくは0.11から0.35の範囲内、さらに好ましくは0.12から0.30の範囲内である、請求項1又は請求項2に記載の銅−セラミックス複合材料。
- 前記銅又は銅合金の、最小粒子サイズ(dmin(Cu))が≧15μmであり、かつ、最大粒子サイズ(dmax(Cu))が≦250μmであり、より好ましくは、最小粒子サイズ(dmin(Cu))が≧20μmであり、かつ、最大粒子サイズ(dmax(Cu))が≦210μmである、請求項1から請求項3のいずれか1項に記載の銅−セラミックス複合材料。
- 銅又は銅合金からなる前記被膜が、DCB法によって前記セラミック基板に貼り付けられる、請求項1から請求項4のいずれか1項に記載の銅−セラミックス複合材料。
- 銅又は銅合金からなる前記被膜が、少なくとも部分的に電気接触部を形成する構造化部を有する、請求項1から請求項5のいずれか1項に記載の銅−セラミックス複合材料。
- 前記セラミック基板が、酸化物、窒化物、炭化物、又はこれら材料の少なくとも2種の混合物若しくは複合材料を含む、請求項1から請求項6のいずれか1項に記載の銅−セラミックス複合材料。
- 前記セラミック基板が、Al2O3を少なくとも65重量%含む、請求項1から請求項7のいずれか1項に記載の銅−セラミックス複合材料。
- 銅又は銅合金からなる前記被膜は、その面積の少なくとも70%に渡って厚さが0.2mmから1.2mmの範囲内であり;及び/又は、前記セラミック基板は、その面積の少なくとも70%に渡って厚さが0.2mmから1.2mmの範囲内である、請求項1から請求項8のいずれか1項に記載の銅−セラミックス複合材料。
- 請求項1から請求項9のいずれか1項に記載の銅−セラミックス複合材料を少なくとも1種と、1又は2以上のボンドワイヤーとを含むモジュール。
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EP16157497.5A EP3210956B1 (de) | 2016-02-26 | 2016-02-26 | Kupfer-keramik-verbund |
PCT/EP2017/053448 WO2017144330A1 (de) | 2016-02-26 | 2017-02-16 | Kupfer-keramik-verbund |
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EP3855484B1 (en) * | 2018-12-06 | 2023-03-08 | NGK Insulators, Ltd. | Substrate for semiconductor device |
CN113929486B (zh) * | 2020-06-29 | 2022-12-09 | 比亚迪股份有限公司 | 一种陶瓷覆铜板及其制备方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3766634A (en) | 1972-04-20 | 1973-10-23 | Gen Electric | Method of direct bonding metals to non-metallic substrates |
US3744120A (en) | 1972-04-20 | 1973-07-10 | Gen Electric | Direct bonding of metals with a metal-gas eutectic |
US3994430A (en) | 1975-07-30 | 1976-11-30 | General Electric Company | Direct bonding of metals to ceramics and metals |
DE3204167A1 (de) | 1982-02-06 | 1983-08-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum direkten verbinden von metallstuecken mit oxidkeramiksubstraten |
JPS62282797A (ja) * | 1986-05-29 | 1987-12-08 | Dowa Mining Co Ltd | セラミツクス−銅直接接合用銅材 |
DE4004844C1 (de) | 1990-02-16 | 1991-01-03 | Abb Ixys Semiconductor Gmbh | Verfahren zur Herstellung einer strukturierten Kupfermetallisierung auf einem Keramiksubstrat |
DE4318241C2 (de) | 1993-06-02 | 1995-06-29 | Schulz Harder Juergen | Metallbeschichtetes Substrat mit verbesserter Widerstandsfähigkeit gegen Temperaturwechselbeanspruchung |
DE4319944C2 (de) | 1993-06-03 | 1998-07-23 | Schulz Harder Juergen | Mehrfach-Substrat sowie Verfahren zu seiner Herstellung |
US6123797A (en) * | 1995-06-23 | 2000-09-26 | The Dow Chemical Company | Method for coating a non-wetting fluidizable and material onto a substrate |
DE19927046B4 (de) | 1999-06-14 | 2007-01-25 | Electrovac Ag | Keramik-Metall-Substrat als Mehrfachsubstrat |
JP4206915B2 (ja) * | 2002-12-27 | 2009-01-14 | 三菱マテリアル株式会社 | パワーモジュール用基板 |
DE102004012231B4 (de) | 2004-03-09 | 2006-03-23 | Curamik Electronics Gmbh | Metall-Keramik-Substrat |
DE102004050792A1 (de) * | 2004-10-19 | 2006-04-20 | Robert Bosch Gmbh | Bauelemente-Modul für Hochtemperaturanwendungen und Verfahren zum Herstellen eines derartigen Bauelemente-Moduls |
DE102004056879B4 (de) | 2004-10-27 | 2008-12-04 | Curamik Electronics Gmbh | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
CN101391901B (zh) * | 2008-11-07 | 2010-08-11 | 哈尔滨工业大学 | Al2O3陶瓷与金属材料的钎焊方法 |
DE102009033029A1 (de) | 2009-07-02 | 2011-01-05 | Electrovac Ag | Elektronische Vorrichtung |
JP2011124585A (ja) | 2011-01-07 | 2011-06-23 | Hitachi Metals Ltd | セラミックス配線基板、その製造方法及び半導体モジュール |
KR101522806B1 (ko) * | 2011-07-14 | 2015-05-26 | 가부시끼가이샤 도시바 | 세라믹스 회로 기판 |
JP5972875B2 (ja) * | 2011-07-14 | 2016-08-17 | 株式会社東芝 | セラミックス回路基板 |
JP5908473B2 (ja) * | 2011-07-28 | 2016-04-26 | 株式会社東芝 | 酸化物系セラミックス回路基板の製造方法および酸化物系セラミックス回路基板 |
CN102339758B (zh) * | 2011-10-13 | 2013-05-22 | 华中科技大学 | 低温键合制备铜-陶瓷基板方法 |
DE102012110322B4 (de) * | 2012-10-29 | 2014-09-11 | Rogers Germany Gmbh | Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates |
DE102013104739B4 (de) | 2013-03-14 | 2022-10-27 | Rogers Germany Gmbh | Metall-Keramik-Substrate sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates |
JP6130209B2 (ja) * | 2013-05-14 | 2017-05-17 | Dowaエレクトロニクス株式会社 | 導電膜 |
DE102013113736B4 (de) | 2013-12-10 | 2019-11-14 | Rogers Germany Gmbh | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
CN103819214B (zh) * | 2014-01-10 | 2015-04-01 | 南京中江新材料科技有限公司 | 一种AlN陶瓷敷铜基板及其制备方法 |
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KR20180111944A (ko) | 2018-10-11 |
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US20210188718A1 (en) | 2021-06-24 |
CN108698943A (zh) | 2018-10-23 |
KR102274969B1 (ko) | 2021-07-08 |
WO2017144330A1 (de) | 2017-08-31 |
JP2019511993A (ja) | 2019-05-09 |
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