JP6817167B2 - 耐湿性チップスケールパッケージ発光素子 - Google Patents

耐湿性チップスケールパッケージ発光素子 Download PDF

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Publication number
JP6817167B2
JP6817167B2 JP2017151954A JP2017151954A JP6817167B2 JP 6817167 B2 JP6817167 B2 JP 6817167B2 JP 2017151954 A JP2017151954 A JP 2017151954A JP 2017151954 A JP2017151954 A JP 2017151954A JP 6817167 B2 JP6817167 B2 JP 6817167B2
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layer
photoluminescent
light emitting
moisture
polymer matrix
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JP2018056552A5 (enExample
JP2018056552A (ja
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チェン チェー
チェン チェー
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Maven Optronics Co Ltd
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Maven Optronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Optical Filters (AREA)
JP2017151954A 2016-08-05 2017-08-04 耐湿性チップスケールパッケージ発光素子 Active JP6817167B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW105124965 2016-08-05
TW105124965A TWI599078B (zh) 2016-08-05 2016-08-05 具濕氣阻隔結構之晶片級封裝發光裝置

Related Child Applications (1)

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JP2020174343A Division JP7100383B2 (ja) 2016-08-05 2020-10-16 耐湿性チップスケールパッケージ発光素子

Publications (3)

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JP2018056552A JP2018056552A (ja) 2018-04-05
JP2018056552A5 JP2018056552A5 (enExample) 2019-03-28
JP6817167B2 true JP6817167B2 (ja) 2021-01-20

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JP2017151954A Active JP6817167B2 (ja) 2016-08-05 2017-08-04 耐湿性チップスケールパッケージ発光素子
JP2020174343A Active JP7100383B2 (ja) 2016-08-05 2020-10-16 耐湿性チップスケールパッケージ発光素子

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JP2020174343A Active JP7100383B2 (ja) 2016-08-05 2020-10-16 耐湿性チップスケールパッケージ発光素子

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JP (2) JP6817167B2 (enExample)
KR (1) KR101942042B1 (enExample)
TW (1) TWI599078B (enExample)

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TWI659550B (zh) * 2018-02-14 2019-05-11 行家光電股份有限公司 具電極辨識之晶片級封裝發光裝置及其製造方法
US11335842B2 (en) 2018-02-14 2022-05-17 Maven Optronics Co., Ltd. Chip-scale packaging light-emitting device with electrode polarity identifier and method of manufacturing the same
KR102555238B1 (ko) * 2018-09-13 2023-07-14 주식회사 루멘스 퀀텀닷 엘이디 패키지 및 이를 포함하는 퀀텀닷 엘이디 모듈
JP7054005B2 (ja) 2018-09-28 2022-04-13 日亜化学工業株式会社 発光装置
JP6940776B2 (ja) 2018-11-05 2021-09-29 日亜化学工業株式会社 発光装置及びその製造方法
CN119208311A (zh) 2019-03-18 2024-12-27 英特曼帝克司公司 Led灯丝
US11781714B2 (en) 2019-03-18 2023-10-10 Bridgelux, Inc. LED-filaments and LED-filament lamps
CN113826225A (zh) * 2019-03-18 2021-12-21 英特曼帝克司公司 包括光致发光层状结构的封装白色发光装置
KR102140993B1 (ko) * 2019-04-01 2020-08-05 (주)라이타이저 발광다이오드 칩 스케일 패키지 및 그의 제조 방법
CN118251042A (zh) * 2019-04-25 2024-06-25 应用材料公司 具有低折射率和低水蒸气穿透率的湿气阻挡膜
KR102677646B1 (ko) * 2019-05-22 2024-06-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자패키지 및 광원장치
JP6864875B2 (ja) * 2019-08-30 2021-04-28 日亜化学工業株式会社 発光モジュール及びその製造方法

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ATE410792T1 (de) * 2003-12-02 2008-10-15 Koninkl Philips Electronics Nv Elektrolumineszenzbauelement
US7560820B2 (en) * 2004-04-15 2009-07-14 Saes Getters S.P.A. Integrated getter for vacuum or inert gas packaged LEDs
JP2007317787A (ja) * 2006-05-24 2007-12-06 Citizen Electronics Co Ltd 発光装置およびその製造方法
US8947619B2 (en) * 2006-07-06 2015-02-03 Intematix Corporation Photoluminescence color display comprising quantum dots material and a wavelength selective filter that allows passage of excitation radiation and prevents passage of light generated by photoluminescence materials
JP2008066462A (ja) * 2006-09-06 2008-03-21 Fujikura Ltd イルミネーションランプ及びイルミネーションランプユニット
JP4892380B2 (ja) * 2007-03-26 2012-03-07 出光興産株式会社 光半導体用反射材
US7791093B2 (en) * 2007-09-04 2010-09-07 Koninklijke Philips Electronics N.V. LED with particles in encapsulant for increased light extraction and non-yellow off-state color
JP2009071005A (ja) * 2007-09-13 2009-04-02 Sony Corp 波長変換部材及びその製造方法、並びに、波長変換部材を用いた発光デバイス
RU2489774C2 (ru) * 2007-11-29 2013-08-10 Нития Корпорейшн Светоизлучающее устройство и способ его изготовления
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TWI508331B (zh) * 2008-11-13 2015-11-11 Maven Optronics Corp 用於形成螢光轉換型發光元件之薄膜螢光層的系統及方法、以及用於螢光轉換型發光元件之薄膜螢光層
JP2010118560A (ja) * 2008-11-13 2010-05-27 Sumitomo Metal Electronics Devices Inc 発光素子搭載用パッケージの製造方法
JP5521325B2 (ja) * 2008-12-27 2014-06-11 日亜化学工業株式会社 発光装置及びその製造方法
JPWO2010123059A1 (ja) * 2009-04-22 2012-10-25 シーシーエス株式会社 Ｌｅｄ発光デバイスの製造方法
JP2011042732A (ja) * 2009-08-20 2011-03-03 Kaneka Corp Ｌｅｄ封止剤
JP2011243963A (ja) * 2010-04-21 2011-12-01 Mitsubishi Chemicals Corp 半導体発光装置及び半導体発光装置の製造方法
KR20110136676A (ko) * 2010-06-14 2011-12-21 삼성엘이디 주식회사 양자점을 이용한 발광소자 패키지, 조광 장치 및 디스플레이 장치
JP2012036265A (ja) * 2010-08-05 2012-02-23 Sharp Corp 照明装置
WO2012090961A1 (ja) * 2010-12-28 2012-07-05 コニカミノルタオプト株式会社 発光装置、発光装置の製造方法、及び、塗布液
WO2012132236A1 (ja) * 2011-03-31 2012-10-04 パナソニック株式会社 半導体発光素子および発光装置
CN103650183B (zh) * 2011-06-30 2017-02-22 松下知识产权经营株式会社 发光装置
KR101265094B1 (ko) * 2011-08-09 2013-05-16 한국과학기술연구원 백색 발광 다이오드 및 그 제조 방법
JP2013172041A (ja) * 2012-02-22 2013-09-02 Sharp Corp 発光装置
CN104272479A (zh) * 2012-05-14 2015-01-07 皇家飞利浦有限公司 具有远程纳米结构磷光体的发光设备
JP6272638B2 (ja) * 2012-07-27 2018-01-31 株式会社カネカ 光半導体装置
JP2014216622A (ja) * 2013-04-30 2014-11-17 日亜化学工業株式会社 発光装置の製造方法
US9484504B2 (en) * 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
EP3092666B1 (en) * 2014-01-07 2019-08-28 Lumileds Holding B.V. Glueless light emitting device with phosphor converter
JP6303805B2 (ja) * 2014-05-21 2018-04-04 日亜化学工業株式会社 発光装置及びその製造方法
US9660151B2 (en) * 2014-05-21 2017-05-23 Nichia Corporation Method for manufacturing light emitting device
JP6582382B2 (ja) * 2014-09-26 2019-10-02 日亜化学工業株式会社 発光装置の製造方法
TWI543394B (zh) * 2014-12-05 2016-07-21 Electroluminescence and Photoluminescence Multiband White Light Emitting Diodes
CN110690334A (zh) * 2014-12-26 2020-01-14 Ns材料株式会社 波长转换构件
US9620686B2 (en) * 2015-01-28 2017-04-11 Apple Inc. Display light sources with quantum dots

Also Published As

Publication number Publication date
KR101942042B1 (ko) 2019-01-25
TW201806189A (zh) 2018-02-16
TWI599078B (zh) 2017-09-11
JP2018056552A (ja) 2018-04-05
JP7100383B2 (ja) 2022-07-13
JP2021044554A (ja) 2021-03-18

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