JP6808267B2 - 切削方法、及び、切削装置 - Google Patents
切削方法、及び、切削装置 Download PDFInfo
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- JP6808267B2 JP6808267B2 JP2016123811A JP2016123811A JP6808267B2 JP 6808267 B2 JP6808267 B2 JP 6808267B2 JP 2016123811 A JP2016123811 A JP 2016123811A JP 2016123811 A JP2016123811 A JP 2016123811A JP 6808267 B2 JP6808267 B2 JP 6808267B2
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- 238000005520 cutting process Methods 0.000 title claims description 196
- 238000000034 method Methods 0.000 title claims description 25
- 238000001514 detection method Methods 0.000 claims description 15
- 230000010355 oscillation Effects 0.000 claims description 11
- 230000010356 wave oscillation Effects 0.000 claims description 3
- 238000003754 machining Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 7
- 239000002173 cutting fluid Substances 0.000 description 6
- 230000002950 deficient Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/005—Devices for the automatic drive or the program control of the machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/02—Accessories specially adapted for use with machines or devices of the preceding groups for removing or laying dust, e.g. by spraying liquids; for cooling work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/04—Accessories specially adapted for use with machines or devices of the preceding groups for supporting or holding work or conveying or discharging work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2683—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using X-ray lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
1a 表面
3 分割予定ライン
5 デバイス
7 ダイシングテープ
9 フレーム
2 切削装置
4 基台
6 保持テーブル(保持手段)
6a 保持面
6b 流路
6c 吸引源
6d 保持テーブル移動方向
8 ブレードユニット(切削手段)
10 X軸移動機構(移動手段)
12 X軸ガイドレール
14 X軸移動テーブル
16 X軸ボールネジ
18 X軸パルスモータ
20 支持台
22 クランプ
24 Y軸移動機構(割り出し送り手段)
26 Y軸ガイドレール
28 Y軸移動テーブル
28a 基部
28b 壁部
30 Y軸ボールネジ
32 Y軸パルスモータ
34 Z軸移動機構
36 Z軸ガイドレール
38 Z軸移動テーブル
40 Z軸パルスモータ
42 切削ブレード
42a 切削進行方向
43 切削液供給手段
43a 撮像装置
43b 切削液供給パイプ
44 クラック検出ユニット
46 筐体
48 水
50 底板
52 超音波発振部
52a 超音波振動子
54 超音波発振受信部
54a 超音波振動子
56 パルス電圧発生部
58 波形検出部
60 クラック判定部
62 報知部
64 供給口
66 供給源
68 制御部
Claims (5)
- 被加工物を切削ブレードで切削する切削方法であって、
被加工物を保持テーブルで保持する保持ステップと、
該保持ステップを実施した後、該保持テーブルで保持された被加工物に回転する切削ブレードを切り込ませるとともに該保持テーブルと該切削ブレードとを相対移動させることで被加工物を該切削ブレードで切削する切削ステップと、を備え、
該切削ステップでは、該切削ブレードによる被加工物の切削加工が進行する切削進行方向において該切削ブレードよりも後方に配置されたクラック検出手段で被加工物中のクラックの有無を検出しつつ切削を遂行し、
該切削ステップにおいて該クラック検出手段は、該被加工物に超音波を発振し、該超音波の反射波を受信し、該反射波の波形を解析することで該被加工物中のクラックの有無を検出することを特徴とする切削方法。 - 該切削ステップの実施中に該クラック検出手段で被加工物のクラックを検出した際に該保持テーブルと該切削ブレードとの相対移動を停止するまたは相対移動の速度を遅くすることを特徴とする請求項1に記載の切削方法。
- 該クラック検出手段は、該被加工物に対して垂直に第1の超音波を発振できる向きに配置された超音波発振受信部と、該被加工物に対して垂直でない向きから第2の超音波を発振できる向きに配置された超音波発振部と、を備え、
該切削ステップにおいて該クラック検出手段は、該超音波発振受信部から発振された該第1の超音波と、該超音波発振部から発振された該第2の超音波と、を含む該超音波の該反射波を解析することで該被加工物中のクラックの有無を検出することを特徴とする請求項1に記載の切削方法。 - 被加工物を切削する切削装置であって、
被加工物を保持する保持テーブルと、
該保持テーブルで保持された被加工物を切削する切削ブレードを有する切削手段と、
該切削ブレードと該保持テーブルとを相対移動させる移動手段と、
該切削ブレードによる被加工物の切削加工が進行する切削進行方向において該切削ブレードよりも後方に配置され被加工物中のクラックの有無を検出するクラック検出手段と、
を備え、
該クラック検出手段は、該被加工物に向けて超音波を発振し、反射波を観測して該被加工物中のクラックの有無を検出することを特徴とする切削装置。 - 該クラック検出手段は、該被加工物に対して垂直に第1の超音波を発振できる向きに配置された超音波発振受信部と、該被加工物に対して垂直でない向きから第2の超音波を発振できる向きに配置された超音波発振部と、を備え、該超音波発振受信部から発振された該第1の超音波と、該超音波発振部から発振された該第2の超音波と、を含む該超音波の該反射波を解析することで該被加工物中のクラックの有無を検出することを特徴とする請求項4に記載の切削装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016123811A JP6808267B2 (ja) | 2016-06-22 | 2016-06-22 | 切削方法、及び、切削装置 |
TW106115663A TWI725185B (zh) | 2016-06-22 | 2017-05-11 | 切削方法及切削裝置 |
KR1020170068831A KR102331680B1 (ko) | 2016-06-22 | 2017-06-02 | 절삭 방법 및 절삭 장치 |
SG10201704583TA SG10201704583TA (en) | 2016-06-22 | 2017-06-05 | Cutting method for cutting processing-target object and cutting apparatus that cuts processing-target object |
US15/621,165 US10121672B2 (en) | 2016-06-22 | 2017-06-13 | Cutting method for cutting processing-target object and cutting apparatus that cuts processing-target object |
CN201710462981.5A CN107520976B (zh) | 2016-06-22 | 2017-06-19 | 切削方法和切削装置 |
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JP2016123811A JP6808267B2 (ja) | 2016-06-22 | 2016-06-22 | 切削方法、及び、切削装置 |
Publications (2)
Publication Number | Publication Date |
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JP2017228653A JP2017228653A (ja) | 2017-12-28 |
JP6808267B2 true JP6808267B2 (ja) | 2021-01-06 |
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JP2016123811A Active JP6808267B2 (ja) | 2016-06-22 | 2016-06-22 | 切削方法、及び、切削装置 |
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US (1) | US10121672B2 (ja) |
JP (1) | JP6808267B2 (ja) |
KR (1) | KR102331680B1 (ja) |
CN (1) | CN107520976B (ja) |
SG (1) | SG10201704583TA (ja) |
TW (1) | TWI725185B (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP6802085B2 (ja) * | 2017-02-21 | 2020-12-16 | 株式会社ディスコ | ウエーハの加工方法 |
JP6964945B2 (ja) * | 2018-01-05 | 2021-11-10 | 株式会社ディスコ | 加工方法 |
JP7106298B2 (ja) * | 2018-03-05 | 2022-07-26 | 株式会社ディスコ | チャックテーブル、切削装置、及び、切削装置のチャックテーブル修正方法 |
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CN112693003B (zh) * | 2020-12-29 | 2022-12-23 | 安徽三合建设有限公司 | 一种裂缝检测分离式碳酸钙板处理装置 |
CN116330381A (zh) * | 2021-09-30 | 2023-06-27 | 福建迈可博电子科技集团股份有限公司 | 一种多动作联动的射频连接器绝缘子对切装置 |
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JP2004273895A (ja) * | 2003-03-11 | 2004-09-30 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
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JP4481668B2 (ja) * | 2004-02-03 | 2010-06-16 | 株式会社ディスコ | 切削装置 |
JP2007088028A (ja) * | 2005-09-20 | 2007-04-05 | Disco Abrasive Syst Ltd | 分割装置及びウェーハのアライメント方法 |
JP2009054904A (ja) * | 2007-08-29 | 2009-03-12 | Disco Abrasive Syst Ltd | 切削方法および切削装置 |
JP5623791B2 (ja) * | 2010-06-01 | 2014-11-12 | 株式会社ディスコ | サファイア基板の加工方法 |
JP2012256749A (ja) * | 2011-06-09 | 2012-12-27 | Disco Abrasive Syst Ltd | 切削装置 |
JP6113015B2 (ja) * | 2013-07-24 | 2017-04-12 | 株式会社ディスコ | 割れ厚さ検出装置 |
JP2016009751A (ja) * | 2014-06-24 | 2016-01-18 | 株式会社東京精密 | ダイシング装置及びダイシング方法 |
CN204271041U (zh) * | 2014-10-20 | 2015-04-15 | 上海技美电子科技有限公司 | 晶圆检测装置 |
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