JP6788668B2 - ブロックコポリマーの自己組織化のための組成物及び方法 - Google Patents

ブロックコポリマーの自己組織化のための組成物及び方法 Download PDF

Info

Publication number
JP6788668B2
JP6788668B2 JP2018519469A JP2018519469A JP6788668B2 JP 6788668 B2 JP6788668 B2 JP 6788668B2 JP 2018519469 A JP2018519469 A JP 2018519469A JP 2018519469 A JP2018519469 A JP 2018519469A JP 6788668 B2 JP6788668 B2 JP 6788668B2
Authority
JP
Japan
Prior art keywords
layer
copolymer
coating
alkyl
neutral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018519469A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018538382A5 (fr
JP2018538382A (ja
Inventor
キム・イフン
イン・ジャン
ウー・ヘンペン
シャン・ジエンホゥイ
リン・グァンヤン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of JP2018538382A publication Critical patent/JP2018538382A/ja
Publication of JP2018538382A5 publication Critical patent/JP2018538382A5/ja
Application granted granted Critical
Publication of JP6788668B2 publication Critical patent/JP6788668B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C255/00—Carboxylic acid nitriles
    • C07C255/63—Carboxylic acid nitriles containing cyano groups and nitrogen atoms further bound to other hetero atoms, other than oxygen atoms of nitro or nitroso groups, bound to the same carbon skeleton
    • C07C255/65—Carboxylic acid nitriles containing cyano groups and nitrogen atoms further bound to other hetero atoms, other than oxygen atoms of nitro or nitroso groups, bound to the same carbon skeleton with the nitrogen atoms further bound to nitrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/14—Methyl esters, e.g. methyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F4/00—Polymerisation catalysts
    • C08F4/04—Azo-compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/02—Homopolymers or copolymers of hydrocarbons
    • C09D125/04—Homopolymers or copolymers of styrene
    • C09D125/08—Copolymers of styrene
    • C09D125/14—Copolymers of styrene with unsaturated esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/02—Homopolymers or copolymers of hydrocarbons
    • C09D125/16—Homopolymers or copolymers of alkyl-substituted styrenes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09D133/10—Homopolymers or copolymers of methacrylic acid esters
    • C09D133/12—Homopolymers or copolymers of methyl methacrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Graft Or Block Polymers (AREA)
  • Paints Or Removers (AREA)
  • Laminated Bodies (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
JP2018519469A 2015-10-16 2016-10-13 ブロックコポリマーの自己組織化のための組成物及び方法 Active JP6788668B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/885,328 2015-10-16
US14/885,328 US9574104B1 (en) 2015-10-16 2015-10-16 Compositions and processes for self-assembly of block copolymers
PCT/EP2016/074614 WO2017064199A1 (fr) 2015-10-16 2016-10-13 Compositions et processus d'auto-assemblage de copolymères à blocs

Publications (3)

Publication Number Publication Date
JP2018538382A JP2018538382A (ja) 2018-12-27
JP2018538382A5 JP2018538382A5 (fr) 2019-09-26
JP6788668B2 true JP6788668B2 (ja) 2020-11-25

Family

ID=57133209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018519469A Active JP6788668B2 (ja) 2015-10-16 2016-10-13 ブロックコポリマーの自己組織化のための組成物及び方法

Country Status (7)

Country Link
US (1) US9574104B1 (fr)
EP (1) EP3362404B1 (fr)
JP (1) JP6788668B2 (fr)
KR (1) KR102398438B1 (fr)
CN (1) CN108137313B (fr)
TW (1) TWI599582B (fr)
WO (1) WO2017064199A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016223046A (ja) * 2015-06-04 2016-12-28 東京応化工業株式会社 表面にパターンを有する繊維の製造方法
KR102402958B1 (ko) * 2015-11-11 2022-05-27 삼성전자주식회사 반도체 장치의 패턴 형성 방법 및 반도체 장치의 제조 방법
WO2018008734A1 (fr) * 2016-07-06 2018-01-11 Jsr株式会社 Composition formant film, procédé de formation de film, et procédé lithographique à auto-assemblage dirigé
CN109715746B (zh) 2016-08-18 2021-03-26 默克专利有限公司 用于自组装应用的聚合物组合物
US10691019B2 (en) * 2016-10-07 2020-06-23 Jsr Corporation Pattern-forming method and composition
TWI755344B (zh) 2016-12-21 2022-02-11 德商馬克專利公司 用於嵌段共聚物之自組裝之新穎組合物及方法
US10734239B2 (en) * 2017-03-01 2020-08-04 Brewer Science, Inc. High-chi block copolymers with tunable glass transition temperatures for directed self-assembly
WO2019152078A1 (fr) * 2018-02-01 2019-08-08 Brewer Science, Inc. Copolymères séquencés à gradient pour autoassemblage dirigé
JP7081377B2 (ja) * 2018-08-01 2022-06-07 Jsr株式会社 組成物及び基板表面の修飾方法
TWI772720B (zh) * 2018-12-07 2022-08-01 德商馬克專利公司 用於聚苯乙烯-b-聚(甲基丙烯酸甲酯)二嵌段共聚物之接觸孔自組裝的快速可交聯中性底層及其調配物
EP3772370A1 (fr) * 2019-08-05 2021-02-10 Helmholtz-Zentrum Geesthacht Zentrum für Material- und Küstenforschung GmbH Procédé de production d'une membrane polymère
JPWO2022039082A1 (fr) * 2020-08-17 2022-02-24
EP4341310A1 (fr) * 2021-05-18 2024-03-27 Merck Patent GmbH Sous-couches d'ancrage réticulables hydrophobes ayant des capacités de gravure à sec améliorées pour modélisation d'auto-assemblage dirigé de copolymères séquencés de type ps-b-pmma
EP4441110A1 (fr) 2021-12-02 2024-10-09 Merck Patent GmbH Matériaux de couche neutre et de natte d'embrochage hydrophobe à utiliser en dsa avec une compatibilité de substrat améliorée
CN115826359A (zh) * 2022-11-22 2023-03-21 西南科技大学 用于光刻图案化的全碳氢低介电损耗光敏树脂的制备及应用
WO2024170492A1 (fr) 2023-02-14 2024-08-22 Merck Patent Gmbh Formulation de copolymère séquencé pour l'amélioration de la morphologie auto-assemblée dans une application d'auto-assemblage dirigée

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1243041C (zh) * 2001-02-23 2006-02-22 Ems化学股份有限公司 由聚(甲基)丙烯酸烷基酯链段和聚酰胺链段构成的热塑性嵌段共聚物和其用途
US20090286927A1 (en) * 2005-06-27 2009-11-19 Niels Dan Anders Sodergard Hyperbranched Polymers
KR100926697B1 (ko) * 2007-06-12 2009-11-17 연세대학교 산학협력단 온도와 조성에 의한 부피 수축 원리를 이용한 다공성 나노구조체의 기공 크기 조절
US7521094B1 (en) 2008-01-14 2009-04-21 International Business Machines Corporation Method of forming polymer features by directed self-assembly of block copolymers
US8425982B2 (en) * 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US8114301B2 (en) * 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US7560141B1 (en) 2008-11-11 2009-07-14 International Business Machines Corporation Method of positioning patterns from block copolymer self-assembly
US8569427B2 (en) * 2009-10-08 2013-10-29 University Of South Carolina Polymers derived from rosin and their methods of preparation
US8691925B2 (en) * 2011-09-23 2014-04-08 Az Electronic Materials (Luxembourg) S.A.R.L. Compositions of neutral layer for directed self assembly block copolymers and processes thereof
US8835581B2 (en) 2012-06-08 2014-09-16 Az Electronic Materials (Luxembourg) S.A.R.L. Neutral layer polymer composition for directed self assembly and processes thereof
JP6454324B2 (ja) * 2013-04-03 2019-01-16 ブルーワー サイエンス アイ エヌ シー． 誘導自己組織化用ブロックコポリマーに用いる高エッチング耐性ポリマーブロック
US9291909B2 (en) 2013-05-17 2016-03-22 Az Electronic Materials (Luxembourg) S.A.R.L. Composition comprising a polymeric thermal acid generator and processes thereof
JP6558894B2 (ja) * 2013-12-31 2019-08-14 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ コポリマーの設計、その製造方法およびそれを含む物品
TWI573808B (zh) * 2013-12-31 2017-03-11 陶氏全球科技責任有限公司 經引導之自組裝圖案形成方法及組成物
KR102364329B1 (ko) * 2014-01-16 2022-02-17 브레우어 사이언스, 인코포레이션 유도 자가-조립용 하이-카이 블록 공중합체

Also Published As

Publication number Publication date
TWI599582B (zh) 2017-09-21
EP3362404B1 (fr) 2021-07-28
EP3362404A1 (fr) 2018-08-22
WO2017064199A1 (fr) 2017-04-20
US9574104B1 (en) 2017-02-21
KR20180072735A (ko) 2018-06-29
CN108137313A (zh) 2018-06-08
TW201718676A (zh) 2017-06-01
KR102398438B1 (ko) 2022-05-13
CN108137313B (zh) 2019-10-18
JP2018538382A (ja) 2018-12-27

Similar Documents

Publication Publication Date Title
JP6788668B2 (ja) ブロックコポリマーの自己組織化のための組成物及び方法
JP6077547B2 (ja) 誘導自己組織化ブロックコポリマーのための中性層の組成物及びそれの方法
JP6810782B2 (ja) 誘導自己集合体施与のためのケイ素含有ブロックコポリマー
TWI754661B (zh) 用於自組裝應用之聚合物組合物
JP2023061994A (ja) ブロックコポリマーの自己組織化のための新規組成物及び方法
JP2024519063A (ja) Ｐｓ－ｂ－ｐｍｍａタイプブロックコポリマーの誘導自己集合体をパターン化するための改善されたドライエッチング能を有する疎水性の架橋可能ピン止め下層

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190816

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190816

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20190816

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20190821

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20191209

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191218

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20200226

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200316

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200907

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20200908

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20201021

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20201030

R150 Certificate of patent or registration of utility model

Ref document number: 6788668

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250