JP6760001B2 - 圧電素子、及び、圧電素子応用デバイス - Google Patents
圧電素子、及び、圧電素子応用デバイス Download PDFInfo
- Publication number
- JP6760001B2 JP6760001B2 JP2016222727A JP2016222727A JP6760001B2 JP 6760001 B2 JP6760001 B2 JP 6760001B2 JP 2016222727 A JP2016222727 A JP 2016222727A JP 2016222727 A JP2016222727 A JP 2016222727A JP 6760001 B2 JP6760001 B2 JP 6760001B2
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- Prior art keywords
- electrode
- piezoelectric
- piezoelectric element
- layer
- piezoelectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010410 layer Substances 0.000 claims description 140
- 239000010408 film Substances 0.000 claims description 63
- 239000011734 sodium Substances 0.000 claims description 37
- 229910052744 lithium Inorganic materials 0.000 claims description 33
- 239000011572 manganese Substances 0.000 claims description 33
- 239000002131 composite material Substances 0.000 claims description 29
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 23
- 229910052708 sodium Inorganic materials 0.000 claims description 22
- 239000010955 niobium Substances 0.000 claims description 20
- 229910052748 manganese Inorganic materials 0.000 claims description 19
- 229910052700 potassium Inorganic materials 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 238000005259 measurement Methods 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 12
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 7
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- 239000011591 potassium Substances 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 49
- 239000000463 material Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 33
- 239000000203 mixture Substances 0.000 description 29
- 238000002347 injection Methods 0.000 description 19
- 239000007924 injection Substances 0.000 description 19
- 239000000243 solution Substances 0.000 description 19
- 239000007788 liquid Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 14
- 238000010304 firing Methods 0.000 description 14
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 14
- 238000004891 communication Methods 0.000 description 13
- 239000012212 insulator Substances 0.000 description 12
- 239000002243 precursor Substances 0.000 description 12
- 150000004696 coordination complex Chemical class 0.000 description 11
- 238000005204 segregation Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000000654 additive Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052783 alkali metal Inorganic materials 0.000 description 7
- 150000001340 alkali metals Chemical class 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000005238 degreasing Methods 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- ZUFQCVZBBNZMKD-UHFFFAOYSA-M potassium 2-ethylhexanoate Chemical compound [K+].CCCCC(CC)C([O-])=O ZUFQCVZBBNZMKD-UHFFFAOYSA-M 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- FHRAKXJVEOBCBQ-UHFFFAOYSA-L 2-ethylhexanoate;manganese(2+) Chemical compound [Mn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O FHRAKXJVEOBCBQ-UHFFFAOYSA-L 0.000 description 2
- CYWDDBNPXTUVNN-UHFFFAOYSA-I 2-ethylhexanoate;niobium(5+) Chemical compound [Nb+5].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O CYWDDBNPXTUVNN-UHFFFAOYSA-I 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- MAZKNBXUMANNDL-UHFFFAOYSA-M lithium;2-ethylhexanoate Chemical compound [Li+].CCCCC(CC)C([O-])=O MAZKNBXUMANNDL-UHFFFAOYSA-M 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 235000011056 potassium acetate Nutrition 0.000 description 2
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- VYPDUQYOLCLEGS-UHFFFAOYSA-M sodium;2-ethylhexanoate Chemical compound [Na+].CCCCC(CC)C([O-])=O VYPDUQYOLCLEGS-UHFFFAOYSA-M 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- XIXADJRWDQXREU-UHFFFAOYSA-M lithium acetate Chemical compound [Li+].CC([O-])=O XIXADJRWDQXREU-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- UYLYBEXRJGPQSH-UHFFFAOYSA-N sodium;oxido(dioxo)niobium Chemical compound [Na+].[O-][Nb](=O)=O UYLYBEXRJGPQSH-UHFFFAOYSA-N 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
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- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
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- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
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- B41J2/1629—Manufacturing processes etching wet etching
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- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
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- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
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- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1635—Manufacturing processes dividing the wafer into individual chips
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
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- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
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Description
図1は本発明の実施形態に係る液体噴射ヘッドを搭載する液体噴射装置の一例であるインクジェット式記録装置である。図示するように、インクジェット式記録装置Iにおいて、複数のインクジェット式記録ヘッドを有するインクジェット式記録ヘッドユニット(ヘッドユニット)IIが、インク供給手段を構成するカートリッジ2A及び2Bが着脱可能に設けられている。ヘッドユニットIIを搭載したキャリッジ3は、装置本体4に取り付けられたキャリッジ軸5に軸方向移動自在に設けられており、例えば各々ブラックインク組成物及びカラーインク組成物を吐出するものとされている。
・・・ (1)
(0.1≦X≦0.9、0.03≦Y≦0.05、P≦0.05)
なお、バルクのKNN系圧電材料は、結晶構造が室温で斜方晶、約200℃で正方晶をとり、Liを添加することにより、この結晶構造の相境界を室温側にシフトさせて圧電特性を向上させることが知られている。しかしながら、本発明のような薄膜圧電材料では、一般的には擬立方晶をとり、バルクと結晶構造が異なることから、バルクにおける知見は適用できない。
ここで、偏析とは、Liの存在比が偏って高い領域があることであり、後述する試験例によると、圧電体層における膜厚方向でLiの存在比をSIMSにより測定した際に強度(CPS)の最高値が最低値の2.65倍より低くすることで、リーク電流密度が所望の範囲となる圧電体層70となることが知見された。
例えば、結晶化する加熱の際に、昇温をゆっくりと行うと、構成元素がほぼ同時に結晶化することなく、電極に引き付けられやすい元素が集まり、結晶化温度の低いものから順に結晶化するためか、圧電体層70の第1電極60側に偏析し易くなることがわかっている。
・・・ (2)
(0.1≦X≦0.9,好ましくは0.3≦X≦0.7,より好ましくは0.35≦X≦0.55)
(実施例1)
基板10となるシリコン基板の表面を熱酸化することで、シリコン基板上に二酸化シリコンからなる弾性膜51を形成した。次に、弾性膜51上にジルコニウム膜をスパッタリング法によって成膜し、ジルコニウム膜を熱酸化することで酸化ジルコニウムからなる絶縁体膜52を形成した。次に、絶縁体膜52上にチタンをスパッタリング法によって成膜し、熱酸化することにより酸化チタンからなる密着層56を形成した。そして、密着層56上に白金をスパッタリング法によって成膜した後、所定形状にパターニングすることで厚さ50nmの第1電極60を形成した。
まず、2−エチルヘキサン酸カリウム、2−エチルヘキサン酸ナトリウム、2−エチルヘキサン酸ニオブ、2−エチルヘキサン酸リチウム、2−エチルヘキサン酸マンガンからなる溶液を準備し、これを用いて以下の組成となるように前駆体溶液を調合した。
圧電体層を以下の組成となるようにした以外は、実施例1と同様とした。
(K0.38Na0.57Li0.05)(Nb0.995Mn0.005)O3
圧電体層を以下の組成となるようにした以外は、実施例1と同様とした。
(K0.36Na0.54Li0.10)(Nb0.995Mn0.005)O3
圧電体層を以下の組成となるようにした以外は、実施例1と同様とした。
(K0.388Na0.582Li0.03)(Nb0.997Mn0.003)O3
圧電体層を以下の組成となるようにした以外は、実施例1と同様とした。
(K0.388Na0.582Li0.03)(Nb0.98Mn0.02)O3
圧電体層を以下の組成となるようにした以外は、実施例1と同様とした。
(K0.4Na0.60)NbO3
圧電体層を以下の組成となるようにした以外は、実施例1と同様とした。
(K0.4Na0.60)(Nb0.995Mn0.005)O3
圧電体層を以下の組成となるようにした以外は、実施例1と同様とした。
(K0.38Na0.57Li0.05)NbO3
圧電体層を以下の組成となるようにした以外は、実施例1と同様とした。
(K0.394Na0.591Li0.015)(Nb0.996Mn0.004)O3
圧電体層を以下の組成となるようにした以外は、実施例1と同様とした。
(K0.394Na0.591Li0.015)(Nb0.896Mn0.004Sr0.03Ba0.001Zr0.03Ta0.04)O3
圧電体層を実施例2と同じ組成となるようにし、RTAによる加熱処理の昇温温度を10℃/secとした以外は、実施例1と同様とした。
各実施例及び比較例のリーク電流密度を、ヒューレットパッカード社製「4140B」を用い、測定時の保持時間を2秒として、大気中で±50Vの電圧を印加する条件で測定した。印加電圧を電界に換算した結果を図12に示す。
実施例2の圧電体層と比較例6の圧電体層について、圧電体層の厚さ方向に亘って二次イオン質量分析(SIMS)を行い、Liの状態を調べた。なお、二次イオン質量分析装置(SIMS)として、アルバック−ファイ社製「ADEPT−1010」を用いた。
結果は図13及び図14に示す。図の縦軸は、90Zr+16Oで規格化した検出強度であり、横軸は、スパッタ時間であり、スパッタ時間は深さ方向に対応する。
図12より、実施例1〜5は、−400kV/cm2の印加電界において、リーク電流密度が1×10−3A/cm2以下であるのに対し、比較例1〜6は、1×10−3A/cm2以上のリーク電流が発生することがわかった。
比較例1〜3は、Li及びMnを同時には含んでおらず、リーク電流の抑制の効果がないことが確認できた。
また、比較例4、5は、気相法による特許文献2の実施例と同様な組成を溶液法で形成したものであるが、リーク電流の抑制効果は得られなかった。
実施例2と比較例6のSIMS測定結果を比較すると、図13に示すように、実施例2では第1電極直上のリチウムの偏析は存在せず、リチウムのSIMS測定における測定強度(CPS)の最高値は最低値の1.71倍であった。また、実施例2では、リチウムが第1電極中の絶縁体膜近傍に偏析していることが確認できた。
一方、図14に示すように、比較例6では、圧電体層中の第1電極近傍にリチウムの偏析が観察され、SIMS測定における測定強度(CPS)の最高値は最低値の2.65倍であった。
以上、本発明の圧電材料や圧電素子、この圧電素子が搭載される液体噴射ヘッド及び液体噴射装置の一実施形態を説明したが、本発明の基本的構成は上記のものに限定されるものではない。例えば、上記の実施形態1では、流路形成基板10としてシリコン単結晶基板を例示したが、これに限定されず、例えば、SOI基板、ガラス等の材料を用いるようにしてもよい。
Claims (5)
- 第1電極と、
前記第1電極上に形成された薄膜であり、カリウムと、ナトリウムと、ニオブと、を含むペロブスカイト型構造の複合酸化物からなる圧電体層と、
前記圧電体層上に設けられた第2電極と、
を備えた圧電素子であって、
前記複合酸化物は、さらに、リチウム及びマンガンを含み、リチウムの含有量がAサイトの総金属モル数中、3mol%〜5mol%、前記マンガンの含有量がBサイトの総金属モル数中5mol%以下であり、
SIMS測定における前記圧電体層の膜厚方向でのリチウムの測定強度(CPS)の最高値が最低値の2.65倍より低いことを特徴とする圧電素子。 - 前記マンガンの含有量は、Bサイトの総金属モル数中、0.3mol%〜2mol%であることを特徴とする請求項1記載の圧電素子。
- 前記第1電極及び前記第2電極は、イリジウム及び白金の少なくとも一種を含み、単層または複数層からなることを特徴とする請求項1又は2記載の圧電素子。
- 前記第1電極は、酸化ジルコニウム層上に設けられ、前記圧電体層中のリチウムが前記酸化ジルコニウム層上に偏析していることを特徴とする請求項1〜3の何れか一項に記載の圧電素子。
- 請求項1〜4の何れか一項に記載の圧電素子を具備することを特徴とする圧電素子応用デバイス。
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