JP6731997B2 - 有機発光表示装置 - Google Patents
有機発光表示装置 Download PDFInfo
- Publication number
- JP6731997B2 JP6731997B2 JP2018228183A JP2018228183A JP6731997B2 JP 6731997 B2 JP6731997 B2 JP 6731997B2 JP 2018228183 A JP2018228183 A JP 2018228183A JP 2018228183 A JP2018228183 A JP 2018228183A JP 6731997 B2 JP6731997 B2 JP 6731997B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- light emitting
- stopper
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010410 layer Substances 0.000 claims description 209
- 150000002894 organic compounds Chemical class 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000002356 single layer Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 239000011147 inorganic material Substances 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 59
- 239000000758 substrate Substances 0.000 description 31
- 239000010409 thin film Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 17
- 238000000926 separation method Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
Description
SUB:薄膜トランジスタ基板
OLE:有機発光ダイオード
E1:第1電極
OL:有機化合物層
E2:第2電極
BN:ピクセル定義膜
BG:凹部
STP:ストッパー
Claims (8)
- ピクセルを有する有機発光表示装置であって、
トランジスタ上に配置される平坦化膜と、
前記平坦化膜上に配置され、前記各ピクセルごとに割り当てられた第1電極と、
前記第1電極の少なくとも一部をそれぞれ露出する開口部を有し、隣接する前記開口部との間に配置される凹部を有するピクセル定義膜と、
前記平坦化膜と、前記ピクセル定義膜の間に配置され、前記凹部と重畳されるストッパーと、
前記第1電極及び前記ピクセル定義膜を覆う有機化合物層と、
前記有機化合物層を覆う第2電極と、
を含み、前記有機化合物層は、前記凹部を介して前記ストッパーに直接接触される、有機発光表示装置。 - 前記ストッパーは、
隣接する前記第1電極の間に配置され、前記第1電極の側面に接する、請求項1に記載の有機発光表示装置。 - 前記ストッパーは、
隣接する前記第1電極の間に配置され、前記第1電極の側面と上面の少なくとも一部を覆う、請求項1に記載の有機発光表示装置。 - 前記ストッパーと、前記ピクセル定義膜は、
互いに異なる選択エッチング比を有する、請求項1に記載の有機発光表示装置。 - 前記ストッパーは、
前記ピクセル定義膜のエッチング速度(etch rate)より低いエッチング速度を有する物質を含む、請求項1に記載の有機発光表示装置。 - 前記平坦化膜は有機物質を含む、請求項1に記載の有機発光表示装置。
- 前記ストッパーは、
無機物質からなる単一層または多重層からなる、請求項1に記載の有機発光表示装置。 - 前記ストッパーは、
酸化シリコン(SiOx)膜、窒化シリコン(SiNx)膜、酸化窒化シリコン(SiON)膜、酸化アルミニウム(Al2O3)及び二酸化チタン(TiO2)の内、いずれか1つからなる単一層またはこれらが積層された多重層である、請求項1に記載の有機発光表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2017-0167325 | 2017-12-07 | ||
KR1020170167325A KR102514205B1 (ko) | 2017-12-07 | 2017-12-07 | 유기발광 표시장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019102463A JP2019102463A (ja) | 2019-06-24 |
JP6731997B2 true JP6731997B2 (ja) | 2020-07-29 |
Family
ID=64604450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018228183A Active JP6731997B2 (ja) | 2017-12-07 | 2018-12-05 | 有機発光表示装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10868091B2 (ja) |
EP (1) | EP3496150B1 (ja) |
JP (1) | JP6731997B2 (ja) |
KR (1) | KR102514205B1 (ja) |
CN (1) | CN109962088B (ja) |
TW (1) | TWI702452B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200041420A (ko) * | 2018-10-11 | 2020-04-22 | 삼성디스플레이 주식회사 | 표시 패널 |
KR20210045658A (ko) * | 2019-10-17 | 2021-04-27 | 엘지디스플레이 주식회사 | 발광 표시 장치 및 그 제조 방법 |
CN110931652A (zh) * | 2019-11-26 | 2020-03-27 | 深圳市华星光电半导体显示技术有限公司 | Oled双面显示装置 |
KR20210083917A (ko) * | 2019-12-27 | 2021-07-07 | 엘지디스플레이 주식회사 | 표시 장치 |
CN111584551B (zh) * | 2020-05-06 | 2023-12-01 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板及显示装置 |
US11980046B2 (en) * | 2020-05-27 | 2024-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming an isolation structure having multiple thicknesses to mitigate damage to a display device |
JP2022080003A (ja) * | 2020-11-17 | 2022-05-27 | 株式会社ジャパンディスプレイ | 表示装置 |
CN116548094A (zh) * | 2021-11-29 | 2023-08-04 | 京东方科技集团股份有限公司 | 显示基板 |
WO2024018756A1 (ja) * | 2022-07-21 | 2024-01-25 | キヤノン株式会社 | 発光装置、表示装置、光電変換装置、電子機器、照明装置、および、移動体 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7224118B2 (en) * | 2003-06-17 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus having a wiring connected to a counter electrode via an opening portion in an insulating layer that surrounds a pixel electrode |
JP4715226B2 (ja) * | 2005-02-21 | 2011-07-06 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法、電子機器 |
JP4742626B2 (ja) * | 2005-03-09 | 2011-08-10 | セイコーエプソン株式会社 | 発光装置、及びこれを備えた電子機器 |
KR100686120B1 (ko) | 2005-05-17 | 2007-02-26 | 엘지전자 주식회사 | 유기 el 소자의 제조방법 |
KR100884185B1 (ko) * | 2006-07-25 | 2009-02-17 | 주식회사 엘지화학 | 유기발광소자 및 그의 제조방법 |
KR100859084B1 (ko) * | 2006-07-25 | 2008-09-17 | 주식회사 엘지화학 | 유기발광소자 및 그의 제조방법 |
KR101373435B1 (ko) * | 2007-03-22 | 2014-03-14 | 엘지디스플레이 주식회사 | 표시기판, 이를 구비한 유기발광다이오드 표시장치 및이들의 제조 방법 |
KR101310917B1 (ko) * | 2008-07-17 | 2013-09-25 | 엘지디스플레이 주식회사 | 유기전계발광표시장치와 이의 제조방법 |
KR101348408B1 (ko) * | 2008-12-02 | 2014-01-07 | 엘지디스플레이 주식회사 | 상부발광 방식 유기전계 발광소자 및 이의 제조 방법 |
US9093399B2 (en) * | 2009-05-28 | 2015-07-28 | Sharp Kabushiki Kaisha | Organic electroluminescence display device, method for producing same, color filter substrate and method for producing same |
CN103053041B (zh) | 2010-08-06 | 2015-11-25 | 株式会社日本有机雷特显示器 | 有机el元件 |
KR101780814B1 (ko) * | 2010-10-21 | 2017-09-21 | 엘지디스플레이 주식회사 | 백색 유기전계발광표시장치와 이의 제조방법 |
KR101811027B1 (ko) | 2011-07-07 | 2017-12-21 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 |
KR20130006068A (ko) | 2011-07-08 | 2013-01-16 | 엘지디스플레이 주식회사 | 트랜지스터 어레이 기판의 제조방법 |
KR101943379B1 (ko) * | 2012-05-30 | 2019-04-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
JP2014029814A (ja) | 2012-07-31 | 2014-02-13 | Sony Corp | 表示装置および電子機器 |
KR101548304B1 (ko) * | 2013-04-23 | 2015-08-28 | 엘지디스플레이 주식회사 | 유기 전계 발광 표시장치 및 그 제조방법 |
KR102076620B1 (ko) * | 2013-09-24 | 2020-02-12 | 엘지디스플레이 주식회사 | 유기발광 다이오드 표시장치 및 그 제조 방법 |
KR102089324B1 (ko) * | 2013-09-30 | 2020-03-16 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 |
US9570471B2 (en) | 2014-08-05 | 2017-02-14 | Lg Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
KR102209499B1 (ko) * | 2014-09-26 | 2021-01-29 | 엘지디스플레이 주식회사 | 유기발광 다이오드 표시장치 및 그 제조 방법 |
KR102347847B1 (ko) * | 2014-12-18 | 2022-01-06 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
CN104659070B (zh) | 2015-03-13 | 2018-11-16 | 上海天马有机发光显示技术有限公司 | 一种显示面板、显示装置及显示面板的制造方法 |
KR102399574B1 (ko) * | 2015-04-03 | 2022-05-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102530799B1 (ko) * | 2015-05-28 | 2023-05-09 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 및 그 제조방법 |
KR102523534B1 (ko) * | 2015-07-15 | 2023-04-19 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 |
KR101765102B1 (ko) * | 2015-11-30 | 2017-08-04 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그의 제조방법 |
US11211582B2 (en) * | 2016-01-15 | 2021-12-28 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus with protection layer surrounding the pixel electrode |
CN107146808A (zh) * | 2017-05-15 | 2017-09-08 | 京东方科技集团股份有限公司 | Oled器件制造方法、oled器件及显示面板 |
CN107104130A (zh) * | 2017-05-26 | 2017-08-29 | 京东方科技集团股份有限公司 | 一种oled显示基板及制备方法、显示面板及显示装置 |
-
2017
- 2017-12-07 KR KR1020170167325A patent/KR102514205B1/ko active IP Right Grant
-
2018
- 2018-11-28 TW TW107142526A patent/TWI702452B/zh active
- 2018-11-29 US US16/204,254 patent/US10868091B2/en active Active
- 2018-12-03 EP EP18209712.1A patent/EP3496150B1/en active Active
- 2018-12-05 JP JP2018228183A patent/JP6731997B2/ja active Active
- 2018-12-06 CN CN201811488257.0A patent/CN109962088B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2019102463A (ja) | 2019-06-24 |
CN109962088A (zh) | 2019-07-02 |
KR20190067410A (ko) | 2019-06-17 |
US20190181199A1 (en) | 2019-06-13 |
KR102514205B1 (ko) | 2023-03-27 |
TWI702452B (zh) | 2020-08-21 |
EP3496150A1 (en) | 2019-06-12 |
US10868091B2 (en) | 2020-12-15 |
EP3496150B1 (en) | 2020-04-29 |
CN109962088B (zh) | 2023-04-28 |
TW201925888A (zh) | 2019-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6731997B2 (ja) | 有機発光表示装置 | |
US11063096B2 (en) | Organic light emitting diode display device | |
KR102449131B1 (ko) | 유기발광 표시장치 | |
KR102489043B1 (ko) | 유기발광 표시장치 | |
KR102349784B1 (ko) | 유기발광 표시장치 | |
JP6680855B2 (ja) | 表示パネルと有機発光表示装置 | |
KR102387344B1 (ko) | 유기발광 표시장치 | |
US10840308B2 (en) | Organic light-emitting display | |
KR102393788B1 (ko) | 유기발광 표시장치 | |
KR102593451B1 (ko) | 표시장치와 이의 제조방법 | |
KR102409120B1 (ko) | 유기발광 표시장치 | |
KR102573550B1 (ko) | 전계발광표시장치 및 이의 제조방법 | |
KR101948897B1 (ko) | 유기발광 다이오드 표시장치 및 그 제조 방법 | |
KR20190079296A (ko) | 유기발광 표시장치 | |
KR20210038182A (ko) | 유기발광 표시장치 | |
KR20210039230A (ko) | 유기발광 표시장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181206 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191004 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191015 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200115 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200310 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200610 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200623 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200707 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6731997 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |