JP6729807B2 - 高周波スイッチ - Google Patents
高周波スイッチ Download PDFInfo
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- JP6729807B2 JP6729807B2 JP2019534447A JP2019534447A JP6729807B2 JP 6729807 B2 JP6729807 B2 JP 6729807B2 JP 2019534447 A JP2019534447 A JP 2019534447A JP 2019534447 A JP2019534447 A JP 2019534447A JP 6729807 B2 JP6729807 B2 JP 6729807B2
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- 239000004065 semiconductor Substances 0.000 claims description 81
- 239000004020 conductor Substances 0.000 claims description 80
- 238000000465 moulding Methods 0.000 claims description 8
- 230000001154 acute effect Effects 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 description 42
- 238000003780 insertion Methods 0.000 description 18
- 230000037431 insertion Effects 0.000 description 18
- 238000004891 communication Methods 0.000 description 11
- 230000005672 electromagnetic field Effects 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 102200021395 rs3739168 Human genes 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 3
- 101100532456 Rattus norvegicus Slc28a2 gene Proteins 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
- H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
高周波スイッチ10は、図3に示す回路構成を備える。図3に示すように、高周波スイッチ10は、半導体素子20、および、複数の外部接続端子P10、P111、P112、P121、P122、P131、P132、P141、P142、P151、P152、P161、P162を備える。
このような回路構成からなる高周波スイッチ10は、直方体形状の成形部材を備える。成形部材は樹脂モールドによって形成されており、半導体素子20は、この成形部材に内蔵されている。すなわち、半導体素子20は、成形部材によって封止されている。成形部材の裏面には、複数の外部導体が形成されている。複数の外部導体は、上述の外部接続端子P10、P111、P112、P121、P122、P131、P132、P141、P142、P151、P152、P161、P162に、所定の配線パターンによって接続されている。
20、20B:半導体素子
30、31、32、33、34、35、36、37、38:配線導体
211、212、213、221、222、223、231、232、233、241、242、243、251、252、253、261、262、263、271、281:FET
AR1:領域
P10、P111、P112、P121、P122、P131、P132、P141、P142、P151、P152、P161、P162、P171、P172、P181、P182:外部接続端子
P20、P20S:共通端子
P211、P221、P231、P241、P251、P261、P271、P281:入出力端子
P212、P222、P232、P242、P252、P262、P272、P282:グランド用端子
Wg211、Wg251:ゲート幅
Claims (9)
- 第1FETおよび第2FETを少なくとも含む複数のFETが形成された半導体素子と、
複数の外部接続端子と、
前記半導体素子を封止する成形部材と、を備え、
前記半導体素子は、
共通端子と、
第1端子および第2端子を少なくとも含む複数の入出力端子と、
前記共通端子と前記第1端子との間に接続される前記第1FET、および、前記共通端子と前記第2端子との間に接続される前記第2FETを備え、
前記複数の外部接続端子は、前記共通端子に接続する共通端子用外部接続端子と、前記第1端子に接続する第1外部接続端子と、前記第2端子に接続する第2外部接続端子と、を含み、
前記第1外部接続端子から前記共通端子への信号の進行方向と、前記共通端子から前記共通端子用外部接続端子への信号の進行方向とが逆方向となる区間の長さが、
前記第2外部接続端子から前記共通端子への信号の進行方向と、前記共通端子から前記共通端子用外部接続端子への信号の進行方向とが逆方向となる区間の長さよりも長い構成において、
前記第1FETと前記第2FETは、
所定の入力電力による前記第1FETのドレインソース間を伝送する信号の電力が前記第2FETのドレインソース間を伝送する信号の電力よりも大きくなる構造を有する、
高周波スイッチ。 - 前記第1FETのゲート幅は、前記第2FETのゲート幅よりも広い、
請求項1に記載の高周波スイッチ。 - 前記第1外部接続端子と前記第1端子との間に接続される第1配線導体と、
前記第2外部接続端子と前記第2端子との間に接続される第2配線導体と、
前記共通端子と前記共通端子用外部接続端子との間に接続される第3配線導体と、をさらに備え、
前記第1外部接続端子から前記共通端子への信号の進行方向は、前記第1配線導体における信号の進行方向であり、
前記第2外部接続端子から前記共通端子への信号の進行方向は、前記第2配線導体における信号の進行方向であり、
前記共通端子から前記共通端子用外部接続端子への信号の進行方向は、前記第3配線導体における信号の進行方向である、
請求項1または2に記載の高周波スイッチ。 - 前記第1外部接続端子から前記共通端子への信号の進行方向と、前記共通端子から前記共通端子用外部接続端子への信号の進行方向とが逆方向となる箇所を有し、
前記第2外部接続端子から前記共通端子への信号の進行方向と、前記共通端子から前記共通端子用外部接続端子への信号の進行方向とが逆方向となる箇所を有さない、
請求項3に記載の高周波スイッチ。 - 前記第1配線導体の延長線と前記第3配線導体の延長線とで構成される角は鋭角であり、
前記第2配線導体の延長線と前記第3配線導体の延長線とで構成される角は鈍角である、
請求項4に記載の高周波スイッチ。 - 前記第1端子と前記第2端子とは、前記半導体素子の第1方向に沿って並んでおり、
前記共通端子は、前記第1方向において、前記第1端子と前記第2端子との間に、配置されている、
請求項1乃至請求項5のいずれかに記載の高周波スイッチ。 - 前記半導体素子は、
前記複数の入出力端子のそれぞれと前記共通端子との間にそれぞれに接続された複数のFETをさらに備え、
前記複数の入出力端子および前記複数のFETは、前記第1方向と該第1方向に直交する第2方向に沿って配列して配置されている、
請求項6に記載の高周波スイッチ。 - 前記共通端子用外部接続端子は、前記第2方向に平行であり、かつ、前記共通端子を横切る直線を境にして、前記第1外部接続端子と同じ側にあり、前記第2外部接続端子とは反対側にある、請求項7に記載の高周波スイッチ。
- 前記共通端子は、
前記半導体素子を平面視した略中央に配置されている、
請求項1乃至請求項8のいずれかに記載の高周波スイッチ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017148755 | 2017-08-01 | ||
JP2017148755 | 2017-08-01 | ||
PCT/JP2018/028071 WO2019026752A1 (ja) | 2017-08-01 | 2018-07-26 | 高周波スイッチ |
Publications (2)
Publication Number | Publication Date |
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JPWO2019026752A1 JPWO2019026752A1 (ja) | 2020-05-28 |
JP6729807B2 true JP6729807B2 (ja) | 2020-07-22 |
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JP2019534447A Active JP6729807B2 (ja) | 2017-08-01 | 2018-07-26 | 高周波スイッチ |
Country Status (4)
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US (1) | US10903835B2 (ja) |
JP (1) | JP6729807B2 (ja) |
CN (1) | CN110892522B (ja) |
WO (1) | WO2019026752A1 (ja) |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04287360A (ja) * | 1991-03-15 | 1992-10-12 | Hitachi Ltd | 半導体記憶装置 |
JP3616343B2 (ja) * | 2001-03-27 | 2005-02-02 | 松下電器産業株式会社 | 高周波スイッチ回路およびそれを用いた通信端末装置 |
WO2003036806A1 (fr) * | 2001-10-24 | 2003-05-01 | Matsushita Electric Industrial Co., Ltd. | Module de commutation composee haute frequence, et terminal de communication equipe de ce module |
JP2003204009A (ja) | 2001-11-01 | 2003-07-18 | Sanyo Electric Co Ltd | 半導体装置 |
JP3920629B2 (ja) | 2001-11-15 | 2007-05-30 | 三洋電機株式会社 | 半導体装置 |
US6975271B2 (en) * | 2003-02-26 | 2005-12-13 | Matsushita Electric Industrial Co., Ltd. | Antenna switch module, all-in-one communication module, communication apparatus and method for manufacturing antenna switch module |
JP2008011503A (ja) * | 2006-05-31 | 2008-01-17 | Matsushita Electric Ind Co Ltd | 高周波スイッチ回路、高周波スイッチ装置、及び送信モジュール装置 |
JP4513920B2 (ja) * | 2008-06-19 | 2010-07-28 | 株式会社デンソー | 定電流制御回路 |
JP2010074027A (ja) | 2008-09-22 | 2010-04-02 | Nippon Telegr & Teleph Corp <Ntt> | Fetスイッチ |
KR101089961B1 (ko) * | 2009-12-10 | 2011-12-05 | 삼성전기주식회사 | 선로간 간섭을 제거하는 임피던스 정합 회로 및 이를 갖는 전력 증폭기 |
JP5599260B2 (ja) * | 2010-08-11 | 2014-10-01 | 株式会社東芝 | 高周波スイッチ |
US9024838B2 (en) | 2012-08-09 | 2015-05-05 | Qualcomm Incorporated | Multi-throw antenna switch with off-state capacitance reduction |
JP2015226262A (ja) * | 2014-05-29 | 2015-12-14 | 株式会社東芝 | 半導体スイッチ、無線機器、及び、半導体スイッチの設計方法 |
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2018
- 2018-07-26 WO PCT/JP2018/028071 patent/WO2019026752A1/ja active Application Filing
- 2018-07-26 CN CN201880047278.0A patent/CN110892522B/zh active Active
- 2018-07-26 JP JP2019534447A patent/JP6729807B2/ja active Active
-
2020
- 2020-01-30 US US16/777,123 patent/US10903835B2/en active Active
Also Published As
Publication number | Publication date |
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JPWO2019026752A1 (ja) | 2020-05-28 |
CN110892522A (zh) | 2020-03-17 |
CN110892522B (zh) | 2023-09-12 |
US20200169256A1 (en) | 2020-05-28 |
WO2019026752A1 (ja) | 2019-02-07 |
US10903835B2 (en) | 2021-01-26 |
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