JP6722980B2 - 表示装置および発光装置、並びに電子機器 - Google Patents

表示装置および発光装置、並びに電子機器 Download PDF

Info

Publication number
JP6722980B2
JP6722980B2 JP2015094500A JP2015094500A JP6722980B2 JP 6722980 B2 JP6722980 B2 JP 6722980B2 JP 2015094500 A JP2015094500 A JP 2015094500A JP 2015094500 A JP2015094500 A JP 2015094500A JP 6722980 B2 JP6722980 B2 JP 6722980B2
Authority
JP
Japan
Prior art keywords
film
electrode
display device
substrate
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015094500A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015228368A5 (enExample
JP2015228368A (ja
Inventor
山崎　舜平
舜平 山崎
江口　晋吾
晋吾 江口
敏行 伊佐
敏行 伊佐
清佳 加賀
清佳 加賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2015094500A priority Critical patent/JP6722980B2/ja
Publication of JP2015228368A publication Critical patent/JP2015228368A/ja
Publication of JP2015228368A5 publication Critical patent/JP2015228368A5/ja
Application granted granted Critical
Publication of JP6722980B2 publication Critical patent/JP6722980B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2015094500A 2014-05-09 2015-05-05 表示装置および発光装置、並びに電子機器 Active JP6722980B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015094500A JP6722980B2 (ja) 2014-05-09 2015-05-05 表示装置および発光装置、並びに電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014097943 2014-05-09
JP2014097943 2014-05-09
JP2015094500A JP6722980B2 (ja) 2014-05-09 2015-05-05 表示装置および発光装置、並びに電子機器

Publications (3)

Publication Number Publication Date
JP2015228368A JP2015228368A (ja) 2015-12-17
JP2015228368A5 JP2015228368A5 (enExample) 2018-06-14
JP6722980B2 true JP6722980B2 (ja) 2020-07-15

Family

ID=54368542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015094500A Active JP6722980B2 (ja) 2014-05-09 2015-05-05 表示装置および発光装置、並びに電子機器

Country Status (3)

Country Link
US (1) US9876058B2 (enExample)
JP (1) JP6722980B2 (enExample)
KR (2) KR20150128609A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6722980B2 (ja) * 2014-05-09 2020-07-15 株式会社半導体エネルギー研究所 表示装置および発光装置、並びに電子機器
US10204535B2 (en) * 2015-04-06 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
CN105552225B (zh) * 2016-01-20 2020-04-17 京东方科技集团股份有限公司 用于制造柔性基板的方法、柔性基板和显示装置
CN107579088B (zh) * 2016-07-11 2021-02-26 京东方科技集团股份有限公司 一种柔性oled显示面板及其制备方法
KR102517092B1 (ko) * 2017-08-02 2023-04-04 삼성전자주식회사 가요성 디스플레이 패널을 포함하는 전자 장치
CN109752421B (zh) * 2019-01-31 2021-08-24 厦门天马微电子有限公司 显示面板和显示装置
KR20220087606A (ko) * 2020-12-17 2022-06-27 삼성디스플레이 주식회사 표시 장치
CN113054077A (zh) * 2021-03-16 2021-06-29 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置及拼接显示装置
US11296224B1 (en) * 2021-06-16 2022-04-05 Purdue Research Foundation Non-volatile polarization induced strain coupled 2D FET memory

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6717181B2 (en) * 2001-02-22 2004-04-06 Semiconductor Energy Laboratory Co., Ltd. Luminescent device having thin film transistor
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4408127B2 (ja) * 2003-01-24 2010-02-03 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2005292407A (ja) * 2004-03-31 2005-10-20 Nec Corp 液晶パネルおよびその製造方法及び液晶パネルを搭載した電子機器
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
WO2006067952A1 (ja) * 2004-12-20 2006-06-29 Konica Minolta Holdings, Inc. ガスバリア性薄膜積層体、ガスバリア性樹脂基材、有機ｅｌデバイス
GB2439231B (en) * 2005-03-10 2011-03-02 Konica Minolta Holdings Inc Resin film substrate for organic electroluminescence and organic electroluminescence device
JP4971703B2 (ja) * 2005-07-04 2012-07-11 帝人デュポンフィルム株式会社 有機ｅｌディスプレイ基板用ポリエステルフィルム及びそれからなる有機ｅｌディスプレイ基板用ガスバリア性積層ポリエステルフィルム
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP5714481B2 (ja) * 2008-04-29 2015-05-07 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ 無機傾斜バリア膜及びそれらの製造方法
TWI495108B (zh) 2008-07-31 2015-08-01 Semiconductor Energy Lab 半導體裝置的製造方法
TWI476915B (zh) 2008-12-25 2015-03-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI549198B (zh) 2008-12-26 2016-09-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8450144B2 (en) 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011013523A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011027656A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101988341B1 (ko) 2009-09-04 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN105789321B (zh) 2010-03-26 2019-08-20 株式会社半导体能源研究所 半导体装置的制造方法
JP2012028169A (ja) * 2010-07-23 2012-02-09 Hitachi Displays Ltd 有機エレクトロルミネッセンス表示装置
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6109489B2 (ja) 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 Ｅｌ表示装置
WO2013065213A1 (ja) * 2011-11-02 2013-05-10 パナソニック株式会社 有機発光パネルおよびその製造方法
JP5918509B2 (ja) * 2011-11-15 2016-05-18 株式会社半導体エネルギー研究所 発光装置
JP5907722B2 (ja) * 2011-12-23 2016-04-26 株式会社半導体エネルギー研究所 発光装置の作製方法
KR102034911B1 (ko) * 2012-01-25 2019-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6059566B2 (ja) * 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN104380366B (zh) * 2012-06-19 2017-09-08 新日铁住金化学株式会社 显示装置及其制造方法、以及显示装置支撑基材用聚酰亚胺膜及其制造方法
KR102173801B1 (ko) * 2012-07-12 2020-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 및 표시 장치의 제작 방법
JP6142151B2 (ja) * 2012-07-31 2017-06-07 株式会社Ｊｏｌｅｄ 表示装置および電子機器
US9018624B2 (en) * 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
TWI782259B (zh) * 2012-10-24 2022-11-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102000043B1 (ko) * 2012-10-31 2019-07-15 엘지디스플레이 주식회사 유기전계발광 표시소자 및 그 제조방법
FR2997770B1 (fr) * 2012-11-07 2015-11-20 Saint Gobain Support electroconducteur pour vitrage a diffusion variable par cristaux liquides, et un tel vitrage
JP5804162B2 (ja) * 2013-08-30 2015-11-04 大日本印刷株式会社 トップエミッション型有機エレクトロルミネッセンス表示装置の製造方法、およびトップエミッション型有機エレクトロルミネッセンス表示装置形成用蓋材
US9349751B2 (en) * 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015132694A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
JP6722980B2 (ja) * 2014-05-09 2020-07-15 株式会社半導体エネルギー研究所 表示装置および発光装置、並びに電子機器
CN113419386A (zh) * 2015-04-13 2021-09-21 株式会社半导体能源研究所 显示面板、数据处理器及显示面板的制造方法
US10372274B2 (en) * 2015-04-13 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel

Also Published As

Publication number Publication date
KR20220044184A (ko) 2022-04-06
US9876058B2 (en) 2018-01-23
KR102432641B1 (ko) 2022-08-16
US20150325631A1 (en) 2015-11-12
KR20150128609A (ko) 2015-11-18
JP2015228368A (ja) 2015-12-17

Similar Documents

Publication Publication Date Title
US11800747B2 (en) Display device and electronic device
US11669181B2 (en) Display device and electronic device
US10038171B2 (en) Method for manufacturing display device and method for manufacturing electronic device
US9917267B2 (en) Electronic device comprising first opening and second opening with different widths
JP6722980B2 (ja) 表示装置および発光装置、並びに電子機器
US9843017B2 (en) Display device, manufacturing method thereof, and electronic device
US10522574B2 (en) Manufacturing method of display device and manufacturing method of electronic device

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180426

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180426

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190116

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190226

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190423

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191001

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20191127

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200129

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200526

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200623

R150 Certificate of patent or registration of utility model

Ref document number: 6722980

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250