JP6721486B2 - イオンビーム照射装置及び基板処理装置 - Google Patents

イオンビーム照射装置及び基板処理装置 Download PDF

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Publication number
JP6721486B2
JP6721486B2 JP2016204174A JP2016204174A JP6721486B2 JP 6721486 B2 JP6721486 B2 JP 6721486B2 JP 2016204174 A JP2016204174 A JP 2016204174A JP 2016204174 A JP2016204174 A JP 2016204174A JP 6721486 B2 JP6721486 B2 JP 6721486B2
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JP
Japan
Prior art keywords
grid electrode
beam irradiation
grid
ion beam
offset
Prior art date
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Active
Application number
JP2016204174A
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English (en)
Japanese (ja)
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JP2018067408A5 (enExample
JP2018067408A (ja
Inventor
義弘 梅澤
義弘 梅澤
充敬 大秦
充敬 大秦
信治 長町
信治 長町
健一 下野
健一 下野
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2016204174A priority Critical patent/JP6721486B2/ja
Priority to US15/785,500 priority patent/US10204766B2/en
Publication of JP2018067408A publication Critical patent/JP2018067408A/ja
Publication of JP2018067408A5 publication Critical patent/JP2018067408A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/303—Electron or ion optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2016204174A 2016-10-18 2016-10-18 イオンビーム照射装置及び基板処理装置 Active JP6721486B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016204174A JP6721486B2 (ja) 2016-10-18 2016-10-18 イオンビーム照射装置及び基板処理装置
US15/785,500 US10204766B2 (en) 2016-10-18 2017-10-17 Ion beam irradiation apparatus and substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016204174A JP6721486B2 (ja) 2016-10-18 2016-10-18 イオンビーム照射装置及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2018067408A JP2018067408A (ja) 2018-04-26
JP2018067408A5 JP2018067408A5 (enExample) 2019-12-05
JP6721486B2 true JP6721486B2 (ja) 2020-07-15

Family

ID=61904690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016204174A Active JP6721486B2 (ja) 2016-10-18 2016-10-18 イオンビーム照射装置及び基板処理装置

Country Status (2)

Country Link
US (1) US10204766B2 (enExample)
JP (1) JP6721486B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210132599A (ko) * 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2858776B2 (ja) * 1989-03-08 1999-02-17 日本原子力研究所 ビーム照射装置
US5218218A (en) * 1990-02-01 1993-06-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US5218210A (en) * 1992-02-18 1993-06-08 Eaton Corporation Broad beam flux density control
US5365070A (en) * 1992-04-29 1994-11-15 The Regents Of The University Of California Negative ion beam injection apparatus with magnetic shield and electron removal means
JP3509343B2 (ja) * 1995-10-30 2004-03-22 日新電機株式会社 イオン源
WO2001001438A1 (en) * 1999-06-23 2001-01-04 Applied Materials, Inc. Ion beam generation apparatus
JP4443816B2 (ja) * 2002-09-06 2010-03-31 シャープ株式会社 イオンドーピング装置及びイオンドーピング装置用多孔電極
DE602006020899D1 (de) * 2005-09-06 2011-05-05 Applied Materials Israel Ltd Teilchenoptische Anordnung mit teilchenoptischer Komponente
JP2007173069A (ja) 2005-12-22 2007-07-05 Japan Atomic Energy Agency 超低エネルギーイオン源用電極
JP2009217980A (ja) * 2008-03-07 2009-09-24 Nissin Ion Equipment Co Ltd イオン源の電圧決定方法
TW201133534A (en) * 2009-09-18 2011-10-01 Mapper Lithography Ip Bv Multiple beam charged particle optical system
JP5041260B2 (ja) * 2010-06-04 2012-10-03 日新イオン機器株式会社 イオン注入装置
US8309937B2 (en) * 2010-10-05 2012-11-13 Veeco Instruments, Inc. Grid providing beamlet steering

Also Published As

Publication number Publication date
JP2018067408A (ja) 2018-04-26
US20180108516A1 (en) 2018-04-19
US10204766B2 (en) 2019-02-12

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