JP6719415B2 - エッチング方法およびエッチング装置 - Google Patents
エッチング方法およびエッチング装置 Download PDFInfo
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- JP6719415B2 JP6719415B2 JP2017066857A JP2017066857A JP6719415B2 JP 6719415 B2 JP6719415 B2 JP 6719415B2 JP 2017066857 A JP2017066857 A JP 2017066857A JP 2017066857 A JP2017066857 A JP 2017066857A JP 6719415 B2 JP6719415 B2 JP 6719415B2
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- etching
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- germanium
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- 238000005530 etching Methods 0.000 title claims description 159
- 238000000034 method Methods 0.000 title claims description 47
- 229910052732 germanium Inorganic materials 0.000 claims description 34
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 34
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 10
- 230000005284 excitation Effects 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000005281 excited state Effects 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 137
- 235000012431 wafers Nutrition 0.000 description 29
- 239000004065 semiconductor Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000005192 partition Methods 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- -1 silane compound Chemical class 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
本発明者らは、被処理基板に存在するゲルマニウム(Ge)部分をエッチング可能な方法について検討を重ねた。その結果、H2ガスまたはNH3ガスを含むエッチングガス(以下、単にエッチングガスとも記載する)を励起した状態で被処理基板に供給するという極めてシンプルな手法でGe部分をエッチングすることができ、しかも他の材料に対して高い選択性を有することを見出した。
図2は本発明の一実施形態に係るエッチング方法の実施に用いることができるエッチング装置の一例を示す縦断面図、図3は図2に示すエッチング装置の水平断面図である。
次に、このようなエッチング装置100により実施されるエッチング方法について説明する。
次に実験例1について説明する。
図4は、実験例1におけるエッチング処理前(Initial)のブランケットサンプルの断面を示すSEM写真である。実験例1では、図4に示すような、Si基体上に、熱酸化SiO2膜、Ge膜またはSiGe膜またはSi膜が同順に形成されたブランケットサンプル(以下、サンプルと記載)を準備し、これらサンプルに対し図2および図3のエッチング装置を用いてエッチング処理を行った。
エッチング条件としては、以下の通りである。
温度:300℃
圧力:0.2Torr(26.6Pa)
ガス流量:5slm(H2ガスのみ2slm)
RFパワー:500W
処理時間:30min
留意点として、エッチング処理の際のガス流量は、NH3ガス、O2ガス、N2ガスは、それぞれ5slm(5000sccm)であるが、H2ガスのみ2slm(2000sccm)である。
図5は、実験例1におけるNH3ガスによるエッチング処理後(Post Treatment)のサンプルA〜Eの断面を示すSEM写真である。具体的には、図5(a)がサンプルA、図5(b)がサンプルB、図5(c)がサンプルC、図5(d)がサンプルD、図5(e)がサンプルEのエッチング処理後の断面を示すSEM写真である。
図6は、実験例1におけるH2ガスによるエッチング処理後(Post Treatment)のサンプルA〜Eの断面を示すSEM写真である。具体的には、図6(a)がサンプルA、図6(b)がサンプルB、図6(c)がサンプルC、図6(d)がサンプルD、図6(e)がサンプルEのエッチング処理後の断面を示すSEM写真である。
図7は、実験例1におけるO2ガスによるエッチング処理後(Post Treatment)のサンプルA〜Eの断面を示すSEM写真である。具体的には、図7(a)がサンプルA、図7(b)がサンプルB、図7(c)がサンプルC、図7(d)がサンプルD、図7(e)がサンプルEのエッチング処理後の断面を示すSEM写真である。
図8は、実験例1におけるN2ガスによるエッチング処理後(Post Treatment)のサンプルA〜Eの断面を示すSEM写真である。具体的には、図8(a)がサンプルA、図8(b)がサンプルB、図8(c)がサンプルC、図8(d)がサンプルD、図8(e)がサンプルEのエッチング処理後の断面を示すSEM写真である。
次に実験例2について説明する。
図9は、実験例2におけるエッチング処理前(Initial)のサンプルの断面を示すSEM写真である。実験例2では、図9に示すような、Si基体上に、略同間隔に離間して複数の凹部(トレンチ)を有するSiN膜、およびGe膜が同順に形成されたサンプルを準備し、このサンプルに対し図2および図3のエッチング装置を用いてエッチング処理を行った。
エッチング条件としては、以下の通りである。
温度:300℃
圧力:0.2Torr(26.6Pa)
ガス流量:2slm(2000sccm)
RFパワー:500W
処理時間:20min
以上、本発明の実施形態について説明したが、この発明は、上記の実施形態に限定されることはなく、その趣旨を逸脱しない範囲で種々変形可能である。
5;ウエハボート
15;エッチングガス供給機構
30;プラズマ生成機構
33;プラズマ電極
35;高周波電源
41;排気装置
42;加熱機構
100;エッチング装置
200;半導体基体
201;絶縁膜
202;アモルファスシリコン膜
203;ゲルマニウム膜
W;半導体ウエハ(被処理基板)
Claims (10)
- ゲルマニウム部分を有する被処理基板に、H2ガスまたはNH3ガスを含むエッチングガスを励起された状態で供給し、前記ゲルマニウム部分をエッチングすることを特徴とするエッチング方法。
- 前記ゲルマニウム部分は、ゲルマニウム膜であることを特徴とする請求項1に記載のエッチング方法。
- 前記被処理基板は、前記ゲルマニウム部分とシリコン含有部分とを有し、前記ゲルマニウム部分を前記シリコン含有部分に対して選択的にエッチングすることを特徴とする請求項1または請求項2に記載のエッチング方法。
- 前記シリコン含有部分は、シリコン、シリコンゲルマニウム、シリコン窒化膜、およびシリコン酸化膜のいずれかであることを特徴とする請求項3に記載のエッチング方法。
- 前記エッチングの際に、圧力を6.7〜133Paの範囲とすることを特徴とする請求項1から請求項4のいずれか1項に記載のエッチング方法。
- 前記エッチングの際に、前記被処理基板の温度を200〜400℃の範囲とすることを特徴とする請求項1から請求項5のいずれか1項に記載のエッチング方法。
- 前記エッチングガスは、プラズマ化された状態で供給されることを特徴とする請求項1から請求項6のいずれか1項に記載のエッチング方法。
- ゲルマニウムを有する被処理基板をエッチングするエッチング装置であって、
前記被処理基板を収容する処理容器と、
前記処理容器内に所定のガスを供給するガス供給部と、
前記所定のガスを励起する励起機構と、
前記処理容器内を加熱する加熱機構と、
前記処理容器内を排気して減圧状態とする排気機構と、
前記ガス供給部、前記励起機構、前記加熱機構、および前記排気機構を制御する制御部と
を具備し、
前記制御部は、
前記排気機構により前記処理容器内を所定の減圧状態に制御し、前記加熱機構により前記処理容器内を所定温度に制御し、
前記ガス供給部からH2ガスまたはNH3ガスを含むエッチングガスを供給させ、前記エッチングガスを前記励起機構で励起させ、
励起された状態のエッチングガスにより、前記処理容器内で前記被処理基板のゲルマニウムをエッチングさせることを特徴とするエッチング装置。 - 前記励起機構は、プラズマ生成機構であることを特徴とする請求項8に記載のエッチング装置。
- コンピュータ上で動作し、エッチング装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項7のいずれかのエッチング方法が行われるように、コンピュータに前記エッチング装置を制御させることを特徴とする記憶媒体。
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