JP6713259B2 - センサチップ - Google Patents
センサチップ Download PDFInfo
- Publication number
- JP6713259B2 JP6713259B2 JP2015186319A JP2015186319A JP6713259B2 JP 6713259 B2 JP6713259 B2 JP 6713259B2 JP 2015186319 A JP2015186319 A JP 2015186319A JP 2015186319 A JP2015186319 A JP 2015186319A JP 6713259 B2 JP6713259 B2 JP 6713259B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- stack
- opening
- sensor chip
- sensing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/048—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance for determining moisture content of the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
- G01N27/225—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
Landscapes
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Food Science & Technology (AREA)
- Combustion & Propulsion (AREA)
- Medicinal Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP14186534.5 | 2014-09-26 | ||
| EP14186534.5A EP3001186B1 (en) | 2014-09-26 | 2014-09-26 | Sensor chip |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016070931A JP2016070931A (ja) | 2016-05-09 |
| JP2016070931A5 JP2016070931A5 (enExample) | 2018-11-01 |
| JP6713259B2 true JP6713259B2 (ja) | 2020-06-24 |
Family
ID=51625878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015186319A Active JP6713259B2 (ja) | 2014-09-26 | 2015-09-24 | センサチップ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9506885B2 (enExample) |
| EP (1) | EP3001186B1 (enExample) |
| JP (1) | JP6713259B2 (enExample) |
| KR (1) | KR102361998B1 (enExample) |
| CN (1) | CN105466463B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102609714B1 (ko) * | 2016-04-27 | 2023-12-05 | 엘지전자 주식회사 | 센서 |
| JP6803579B2 (ja) * | 2016-06-08 | 2020-12-23 | Nissha株式会社 | Memsガスセンサ、memsガスセンサ実装体、memsガスセンサ・パッケージ、memsガスセンサ組立体、及びmemsガスセンサの製造方法 |
| EP3139159A1 (en) * | 2016-08-23 | 2017-03-08 | Sensirion AG | Sensor assembly |
| JP7081354B2 (ja) * | 2017-07-19 | 2022-06-07 | 地方独立行政法人東京都立産業技術研究センター | センサ保持基板及びセンサモジュール |
| KR102520038B1 (ko) * | 2018-01-10 | 2023-04-12 | 삼성전자주식회사 | 가스 센서 패키지 및 이를 포함하는 센싱 장치 |
| US20200150069A1 (en) | 2018-11-12 | 2020-05-14 | Ams Sensors Uk Limited | Gas sensor |
| US11674916B2 (en) | 2018-11-12 | 2023-06-13 | Sciosense B.V. | Gas sensor |
| JP7445920B2 (ja) * | 2020-07-02 | 2024-03-08 | パナソニックIpマネジメント株式会社 | ガスセンサ装置 |
| US20230105338A1 (en) | 2021-10-05 | 2023-04-06 | Globalfoundries U.S. Inc. | Contact-free biosensor |
| US12339247B2 (en) | 2022-04-07 | 2025-06-24 | Globalfoundries U.S. Inc. | Field effect transistor with buried fluid-based gate and method |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2880651B2 (ja) | 1994-08-12 | 1999-04-12 | 東京瓦斯株式会社 | 熱式マイクロフローセンサ及びその製造方法 |
| DE19928297A1 (de) | 1999-06-22 | 2000-12-28 | Bosch Gmbh Robert | Verfahren zur Herstellung eines Sensors mit einer Membran |
| US6384353B1 (en) | 2000-02-01 | 2002-05-07 | Motorola, Inc. | Micro-electromechanical system device |
| KR100379471B1 (ko) * | 2000-07-19 | 2003-04-10 | 엘지전자 주식회사 | 절대습도센서 및 이를 이용한 온/습도 검출 회로 |
| JP2004518119A (ja) | 2001-01-10 | 2004-06-17 | ゼンジリオン アクチエンゲゼルシャフト | 伸張性コーティングを有するマイクロメカニカルフローセンサ |
| US6528875B1 (en) | 2001-04-20 | 2003-03-04 | Amkor Technology, Inc. | Vacuum sealed package for semiconductor chip |
| US20030037590A1 (en) | 2001-08-27 | 2003-02-27 | Stark Kevin C. | Method of self-testing a semiconductor chemical gas sensor including an embedded temperature sensor |
| JP2003270189A (ja) * | 2002-03-20 | 2003-09-25 | Denso Corp | 容量式湿度センサ |
| US6841883B1 (en) | 2003-03-31 | 2005-01-11 | Micron Technology, Inc. | Multi-dice chip scale semiconductor components and wafer level methods of fabrication |
| JP4160851B2 (ja) * | 2003-03-31 | 2008-10-08 | 富士通株式会社 | 指紋認識用半導体装置 |
| JP2005109221A (ja) | 2003-09-30 | 2005-04-21 | Toshiba Corp | ウェーハレベルパッケージ及びその製造方法 |
| US6936918B2 (en) | 2003-12-15 | 2005-08-30 | Analog Devices, Inc. | MEMS device with conductive path through substrate |
| JP2006226743A (ja) | 2005-02-16 | 2006-08-31 | Mitsubishi Electric Corp | 加速度センサ |
| DE102008025599B4 (de) | 2007-05-14 | 2013-02-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gehäuste aktive Mikrostrukturen mit Direktkontaktierung zu einem Substrat |
| JP5137059B2 (ja) | 2007-06-20 | 2013-02-06 | 新光電気工業株式会社 | 電子部品用パッケージ及びその製造方法と電子部品装置 |
| JP5031492B2 (ja) | 2007-09-06 | 2012-09-19 | キヤノン株式会社 | インクジェットヘッド基板の製造方法 |
| JP5237607B2 (ja) | 2007-10-25 | 2013-07-17 | 新光電気工業株式会社 | 基板の製造方法 |
| KR100942439B1 (ko) | 2007-12-28 | 2010-02-17 | 전자부품연구원 | 마이크로 가스센서 및 제조방법 |
| US20090212397A1 (en) | 2008-02-22 | 2009-08-27 | Mark Ewing Tuttle | Ultrathin integrated circuit and method of manufacturing an ultrathin integrated circuit |
| EP2154713B1 (en) | 2008-08-11 | 2013-01-02 | Sensirion AG | Method for manufacturing a sensor device with a stress relief layer |
| JP2010212297A (ja) | 2009-03-06 | 2010-09-24 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
| JP2011064509A (ja) * | 2009-09-15 | 2011-03-31 | Alps Electric Co Ltd | 湿度センサパッケージ及びその製造方法 |
| WO2011060559A1 (en) | 2009-11-18 | 2011-05-26 | Sensirion Ag | Sensor mounted in flip-chip technology at a substrate edge |
| WO2011060558A1 (en) | 2009-11-18 | 2011-05-26 | Sensirion Ag | Sensor mounted in flip-chip technology on a substrate |
| US20110138882A1 (en) | 2009-12-11 | 2011-06-16 | Electronics And Telecommunications Research Institute | Semiconductor gas sensor having low power consumption |
| EP2348292A1 (en) | 2010-01-13 | 2011-07-27 | Sensirion AG | Sensor device |
| JP5403695B2 (ja) * | 2010-09-30 | 2014-01-29 | フィガロ技研株式会社 | ガスセンサ |
| JP5595230B2 (ja) * | 2010-11-05 | 2014-09-24 | フィガロ技研株式会社 | ガスセンサ |
| US8354729B2 (en) * | 2010-12-27 | 2013-01-15 | Industrial Technology Research Institute | Gas sensor and manufacturing method thereof |
| EP2482310B1 (en) | 2011-01-27 | 2020-09-23 | Sensirion AG | Through vias in a sensor chip |
| EP2481703B1 (en) * | 2011-01-27 | 2020-07-01 | Sensirion AG | Sensor protection |
| EP2620768B1 (en) * | 2012-01-25 | 2014-12-10 | Sensirion AG | Portable sensing device |
| JP5849836B2 (ja) * | 2012-04-10 | 2016-02-03 | 株式会社デンソー | 湿度センサ |
| US8907433B2 (en) | 2012-09-28 | 2014-12-09 | Agilent Technologies, Inc. | Thin film with improved temperature range |
| EP2762865A1 (en) * | 2013-01-31 | 2014-08-06 | Sensirion Holding AG | Chemical sensor and method for manufacturing such a chemical sensor |
| DE202013102632U1 (de) * | 2013-06-19 | 2013-12-20 | Sensirion Ag | Sensorbaustein |
| US9379081B2 (en) * | 2014-03-24 | 2016-06-28 | King Dragon Nternational Inc. | Semiconductor device package and method of the same |
| EP2765410B1 (en) * | 2014-06-06 | 2023-02-22 | Sensirion AG | Gas sensor package |
-
2014
- 2014-09-26 EP EP14186534.5A patent/EP3001186B1/en active Active
-
2015
- 2015-09-10 US US14/850,031 patent/US9506885B2/en active Active
- 2015-09-24 JP JP2015186319A patent/JP6713259B2/ja active Active
- 2015-09-25 CN CN201510621626.9A patent/CN105466463B/zh active Active
- 2015-09-30 KR KR1020150137466A patent/KR102361998B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105466463A (zh) | 2016-04-06 |
| EP3001186A1 (en) | 2016-03-30 |
| US9506885B2 (en) | 2016-11-29 |
| CN105466463B (zh) | 2019-11-15 |
| KR20160037119A (ko) | 2016-04-05 |
| US20160091446A1 (en) | 2016-03-31 |
| EP3001186B1 (en) | 2018-06-06 |
| JP2016070931A (ja) | 2016-05-09 |
| KR102361998B1 (ko) | 2022-02-10 |
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