JP6690698B2 - Light emitting device - Google Patents

Description

  The present invention relates to a light emitting device.

There is known a light emitting device in which a mounting surface of a support (base material) has a recess, and the support (base) and a mounting substrate are fixed by filling the recess with a brazing material (for example, a patent). Reference 1).

JP, 2013-041865, A

It is an object of the present invention to provide a light emitting device capable of improving the bonding strength with a mounting substrate while suppressing the strength reduction of the base material.

A light-emitting device according to one aspect of the present invention, a front surface extending in a first direction that is a longitudinal direction and a second direction that is a lateral direction, a back surface located on the opposite side of the front surface, and adjacent to the front surface, A base material having a bottom surface orthogonal to the front surface and a top surface located on the opposite side of the bottom surface; a first wiring arranged on the front surface; a second wiring arranged on the back surface; A substrate including a wiring and a via hole electrically connecting the second wiring; at least one light emitting element electrically connected to the first wiring and mounted on the first wiring; A light-emitting device comprising a light-reflective coating member that covers the side surface of the element and the front surface of the substrate, wherein the base material is separated from the via hole in a front view, and the back surface and the bottom surface. A plurality of recesses that open, and the substrate has a plurality of The third wiring that covers the inner wall of the recess and is electrically connected to the second wiring, and the depth of each of the plurality of recesses in the direction from the back surface to the front surface is lower than the upper surface side. Deep on the side.

According to the light emitting device of the present invention, it is possible to provide a light emitting device capable of improving the bonding strength with the mounting substrate while suppressing the strength reduction of the base material.

FIG. 1A is a schematic perspective view 1 of a light emitting device according to a first embodiment. FIG. 1B is a schematic perspective view 2 of the light emitting device according to the first embodiment. FIG. 1C is a schematic front view of the light emitting device according to the first embodiment. FIG. 2A is a schematic end view taken along line 2A-2A in FIG. 1C. 2B is a schematic end view taken along line 2B-2B in FIG. 1C. FIG. 3A is a schematic bottom view of the light emitting device according to the first embodiment. FIG. 3B is a schematic bottom view of the deformability of the light emitting device according to the first embodiment. FIG. 3C is a schematic front view of the base material according to the first embodiment. FIG. 4A is a schematic rear view of the light emitting device according to the first embodiment. FIG. 4B is a schematic rear view showing a modification of the light emitting device according to the first embodiment. FIG. 4C is a schematic rear view showing a modification of the light emitting device according to the first embodiment. FIG. 4D is a schematic bottom view of the deformability of the light emitting device according to the first embodiment. FIG. 4E is a schematic bottom view of the deformability of the light emitting device according to the first embodiment. FIG. 4F is a schematic bottom view of the deformability of the light emitting device according to the first embodiment. FIG. 5A is a schematic right side view of the light emitting device according to the first embodiment. FIG. 5B is a schematic left side view of the light emitting device according to the first embodiment. FIG. 6 is a schematic top view of the light emitting device according to the first embodiment. FIG. 7 is a schematic front view of the light emitting device according to the second embodiment. 8A is a schematic end view taken along line 8A-8A in FIG. 7. 8B is a schematic end view taken along line 8B-8B in FIG. 7. FIG. 9A is a schematic bottom view of the light emitting device according to the second embodiment. FIG. 9B is a schematic rear view of the light emitting device according to the second embodiment. FIG. 10 is a schematic front view of the light emitting device according to the third embodiment. 11 is a schematic end view taken along the line 11A-11A in FIG. FIG. 12 is a schematic bottom view of the light emitting device according to the third embodiment. FIG. 13 is a schematic rear view of the light emitting device according to the third embodiment. FIG. 14 is a schematic right side view of the light emitting device according to the third embodiment. FIG. 15 is a schematic front view showing a modification of the light emitting device according to the third embodiment. 16 is a schematic end view taken along the line 15A-15A in FIG. FIG. 17 is a schematic front view of the light emitting device according to the fourth embodiment. 18 is a schematic end view taken along the line 18A-18A in FIG. FIG. 19 is a schematic bottom view of the light emitting device according to the fourth embodiment. FIG. 20 is a schematic rear view of the light emitting device according to the fourth embodiment. FIG. 21 is a schematic right side view of the light emitting device according to the fourth embodiment. FIG. 22 is a schematic rear view of the light emitting device according to the fifth embodiment. FIG. 23 is a schematic rear view of the light emitting device according to the sixth embodiment. FIG. 24 is a schematic rear view of the light emitting device according to the seventh embodiment. FIG. 25A is a schematic bottom view of a land pattern in which the light emitting device according to the first embodiment is indicated by a dotted line. FIG. 25B is a schematic bottom view showing a modification of the land pattern in which the light emitting device according to the first embodiment is indicated by a dotted line. FIG. 25C is a schematic bottom view showing a modification of the land pattern in which the light emitting device according to the first embodiment is indicated by a dotted line. FIG. 26A is a schematic bottom view of a land pattern in which the light emitting device according to the fourth embodiment is indicated by a dotted line. FIG. 26B is a schematic bottom view showing a modification of the land pattern in which the light emitting device according to the fourth embodiment is indicated by a dotted line. FIG. 27 is a schematic front view of the light emitting device according to the eighth embodiment. 28A is a schematic end view taken along the line 28A-28A in FIG. 28B is a schematic end view taken along the line 28B-28B in FIG. FIG. 29 is a schematic bottom view of the light emitting device according to the eighth embodiment. FIG. 30 is a schematic rear view of the light emitting device according to the eighth embodiment. FIG. 31 is a schematic end view of a modified example of the light emitting device according to the eighth embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the light emitting device described below is for embodying the technical idea of the present invention, and the present invention is not limited to the following unless otherwise specified. In addition, the sizes and positional relationships of members shown in the drawings may be exaggerated for clarity of explanation.

<Embodiment 1>
A light emitting device 1000 according to an embodiment of the present invention will be described with reference to FIGS. 1A to 6. The light emitting device 1000 includes a substrate 10, at least one light emitting element 20, and a covering member 40. The substrate 10 includes a base material 11, first wirings 12, second wirings 13, third wirings 14, and via holes 15. The base material 11 has a first direction that is a longitudinal direction and a second direction that is a lateral direction.
It has a front surface 111 extending in the direction, a back surface 112 located on the opposite side of the front surface, a bottom surface 113 adjacent to the front surface 111 and orthogonal to the front surface 111, and a top surface 114 located on the opposite side of the bottom surface 113. The base material 11 further has a plurality of depressions 16. The first wiring 12 is the front surface 1 of the base material 11.
11 is arranged. The second wiring 13 is arranged on the back surface 112 of the base material 11. Beer hall 1
Reference numeral 5 electrically connects the first wiring 12 and the second wiring 13. The light emitting element 20 includes the first wiring 12
Is electrically connected to and is placed on the first wiring 12. The covering member 40 has light reflectivity,
The side surface 202 of the light emitting element 20 and the front surface 111 of the substrate are covered. The plurality of recesses 16 are separated from the via hole 15 in a front view, and are open to the back surface 112 and the bottom surface 113. The third wiring 14 covers the inner walls of the plurality of depressions 16 and is electrically connected to the second wiring 13. Back 1
Regarding the depth of each of the plurality of depressions 16 in the direction from 12 to the front surface 111, the depth W1 of the depression on the bottom surface side is deeper than the depth W2 of the depression on the top surface side. In this specification, the term “orthogonal” means 90 ± 3.
Means °.

The light emitting device 1000 can be fixed to the mounting substrate by a joining member such as solder formed in the plurality of depressions 16. Since the bonding member can be located in the plurality of recesses, the bonding strength between the light emitting device 1000 and the mounting substrate can be improved as compared with the case where there is one recess.
As shown in FIG. 2A, the depth of each of the plurality of depressions in the direction from the back surface to the front surface (Z direction) is deeper on the bottom surface side than on the top surface side, so that the top surface side of the depression in the front surface direction (Z direction). It is possible to make the thickness W5 of the base material located at the lower side than the thickness W6 of the base material located at the bottom surface side of the recess. This makes it possible to prevent the strength of the base material from decreasing. Further, since the depth W1 of the recess on the bottom surface side is deep, the volume of the bonding member formed in the recess increases, so that the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. Even when the light emitting device 1000 is a top emission type (top-view type) in which the back surface 112 of the base material 11 and the mounting board are opposed to each other, the bottom surface 113 of the base material 11 and the mounting board are mounted to oppose each other. Even in the side-emitting type (side-view type), the bonding strength with the mounting substrate can be improved by increasing the volume of the bonding member. In the present specification, the direction from the back surface to the front surface is also referred to as the Z direction.

The bonding strength between the light emitting device 1000 and the mounting substrate can be improved especially in the case of the side surface light emitting type. Since the depth of the depression in the Z direction is deeper on the bottom surface side than on the top surface side, the area of the opening portion of the depression on the bottom surface can be increased. By increasing the area of the opening of the depression on the bottom surface facing the mounting substrate, the area of the joining member located on the bottom surface can be increased. As a result, the area of the joining member located on the surface facing the mounting board can be increased, so that the joining strength between the light emitting device 1000 and the mounting board can be improved.

As shown in FIG. 2A, the depth W1 of the depression 16 in the Z direction is shallower than the thickness W3 of the base material in the Z direction. That is, the recess 16 does not penetrate the base material. The formation of holes penetrating the base material reduces the strength of the base material. Therefore, it is possible to suppress the decrease in strength of the base material by providing the recess that does not penetrate the base material. It is preferable that the maximum depth of each of the plurality of depressions in the Z direction is 0.4 to 0.8 times the thickness of the base material. The depth of the depression is 0.
When the depth is more than 4 times, the volume of the bonding member formed in the recess increases, so that the bonding strength between the light emitting device and the mounting substrate can be improved. Since the depth of the depression is shallower than 0.8 times the thickness of the base material, it is possible to suppress the strength reduction of the base material.

In cross-sectional view, the recess 16 preferably includes a parallel portion 161 extending from the back surface 112 in a direction parallel to the bottom surface 113 (Z direction). By providing the parallel portion 161, the volume of the depression can be increased even if the area of the opening of the depression on the back surface is the same. By increasing the volume of the depression, the amount of the joining member such as solder that can be formed in the depression can be increased, and thus the joining strength between the light emitting device 1000 and the mounting substrate can be improved. In addition, in the present specification, parallel means that an inclination of about ± 3 ° is allowed. In addition, when viewed in cross section, the depression 1
6 includes an inclined portion 162 that inclines from the bottom surface 113 in the direction in which the thickness of the base material 11 increases.
The sloped portion 162 may be straight or curved. Since the inclined portion 162 is straight, it can be easily formed by a drill having a sharp tip. The straight line in the inclined portion 162 means that a variation of about 3 μm such as bending or deviation is allowed.

As shown in FIG. 3A, on the bottom surface, the depth W1 of the center of each of the plurality of depressions 16 is
It is preferable that the depth of the depression in the Z direction is the maximum. By doing so, the thickness W8 of the base material in the Z direction can be increased at the end of the recess in the X direction on the bottom surface, so that the strength of the base material can be improved. In this specification, the center means that a fluctuation of about 5 μm is allowed. As shown in FIG. 3B, which is a modified example of the first embodiment, the depth W7 of the recess 16 in the Z direction on the bottom surface may be substantially constant. In other words, the depression 16
The deepest part may have a flat surface. The depression 16 can be formed by a known method such as a drill or a laser. On the bottom surface, the depression having the maximum central depth can be easily formed by a drill having a sharp tip. Further, by using a drill, it is possible to form a recess having a substantially conical shape at the deepest portion and having a substantially columnar shape continuous from the circular shape of the bottom surface of the substantially conical shape. By cutting a part of the depression by dicing or the like, it is possible to form a depression having a substantially semicylindrical shape at the deepest portion and having a substantially semicylindrical shape continuous from the substantially semicircular shape.

As shown in FIG. 4A, it is preferable that the recesses 16 have the same shape on the back surface. Since the shapes of the plurality of depressions are the same, the formation of the depressions is easier than when the shapes of the depressions are different from each other. For example, in the case of forming the depression by a drilling method, if the plurality of depressions have the same shape, the depression can be formed by one drill. In this specification, the same means that a difference of about 5 μm is allowed.

Further, the areas of the openings of the plurality of depressions in the rear view may be the same or different. For example, as shown in FIG. 4B, the area of the opening of the recess 16C located in the center of the base material in the rear view is the same as that of the opening of the recess 16L located on the X + side and the opening of the recess 16R located on the X− side. It may be larger than the area. In the rear view shown in FIGS. 4B, 4C, etc., the right side on the X axis from the center of the light emitting device is the X + side, and the left side is the X− side. By increasing the area of the opening of the depression 16C located in the center of the base material, the bonding strength between the light emitting device and the mounting substrate can be improved. Further, since the area of the opening of the depression 16L located on the X + side and the opening of the depression 16R located on the X− side is small, it is easy to increase the area of the second wiring 13.
The large area of the second wiring 13 facilitates the inspection when the probe needle is brought into contact with the second wiring in the characteristic inspection of the light emitting device. In addition, as shown in FIG. 4C, when viewed from the rear, X
The area of the opening of each of the depression 16L located on the + side and the depression 16R located on the X− side may be larger than the area of the opening of the depression 16C located at the center of the base material. By increasing the area of each opening of the recess 16L located on the X + side and the recess 16R located on the X− side, the bonding strength between the light emitting device and the mounting substrate can be improved. Further, it is preferable that the areas of the openings of the recess 16L located on the X + side and the recess 16R located on the X− side when viewed from the rear are substantially the same. By doing so, it becomes easy to suppress deviation between the joining member formed in the recess 16L located on the X + side and the joining member formed in the recess 16R located on the X− side. This makes it easier to prevent the light emitting device from being mounted on the mounting substrate in an inclined manner.

As shown in FIGS. 3A and 3B, the depths W1 and W7 of the plurality of depressions in the Z direction may be the same, or as shown in FIG. 4D, the depths of the plurality of depressions in the Z direction may be different. Good. For example, as shown in FIG. 4D, the depth W1C in the Z direction of the depression 16C located in the center of the base material in the bottom view is located at the depths W1L and X− in the Z direction of the depression 16L located on the X + side. The recess 16R may be deeper than the depth W1R in the Z direction. Incidentally, FIG.
In the bottom views shown in D, 4E, and 4F, the left side on the X axis from the center of the light emitting device is X.
It becomes + side and the right side becomes X- side. Since the depth W1C of the recess 16C located in the center of the base material is deep, the bonding strength between the light emitting device and the mounting substrate can be improved. X in bottom view
Depth W1L in the Z direction of recess 16L located on the + side and recess 16R located on the X-side
The depth W1R in the Z direction may be deeper than the recess W1C of the recess 16C located in the center of the base material. Further, the depth W1L in the Z direction of the recess 16L located on the X + side and the depth W1R in the Z direction of the recess 16R located on the X− side are preferably substantially the same. By doing so, since it becomes easy to suppress the bias between the joining member formed in the recess located on the X + side and the joining member formed in the recess located on the X− side, the light emitting device is mounted on the mounting substrate. It becomes easy to suppress that the device is mounted at an angle.

As shown in FIG. 4D, the width D1C in the X direction of the recess 16C located in the center of the base material in the bottom view, the width D1L in the X direction of the recess 16L located on the X + side, and the X of the recess 16R located on the X− side. The width D1R in the direction may be substantially the same, or as shown in FIGS. 4E and 4F, the width D1C in the X direction of the recess 16C located in the center of the base material in the bottom view and the X direction of the recess 16L located on the X + side in the X direction. Width D1L and / or recess 16R located on the X-side
The width D1R in the X direction may differ. The width D1C of the recess 16C located in the center of the base material in the X direction in the bottom view, and the width D of the recess 16L located on the X + side in the X direction.
Even if the width D1R in the X direction of the recess 16R located on the 1L and / or X- side is different, the depths of the plurality of recesses in the Z direction may be the same or different. Further, it is preferable that the width D1L in the X direction of the recess 16L located on the X + side in the bottom view and the width D1R in the X direction of the recess 16R located on the X− side are substantially the same. By doing so, it becomes easy to suppress deviation between the joining member formed in the recess 16L located on the X + side and the joining member formed in the recess 16R located on the X− side. This makes it easier to prevent the light emitting device from being mounted on the mounting substrate in an inclined manner.

On the back surface, it is preferable that the plurality of recesses 16 are located symmetrically with respect to the center line of the base material parallel to the second direction (Y direction). By doing so, self-alignment works effectively when the light emitting device is mounted on the mounting substrate via the bonding member, and the light emitting device can be mounted within the mounting range with high accuracy.

On the back surface, it is preferable that the opening shape of each of the plurality of depressions is substantially semicircular.
The recess having a circular opening shape can be formed by drilling, and by cutting a part of the circular recess by dicing or the like, a substantially semicircular recess can be easily formed on the back surface. . Further, since the opening shape of the depression is substantially semicircular with no corners on the back surface, it is possible to prevent the stress related to the depression from concentrating, so that the base material can be prevented from cracking.

As shown in FIGS. 1A, 2A, and 2B, the light emitting device 1000 may include a translucent member 30. The transparent member 30 is preferably located on the light emitting element 20. Positioning the translucent member on the light emitting element can protect the light emitting element 20 from external stress. The covering member 40 preferably covers the side surface of the translucent member 30. By doing so, the light from the light emitting device can be brought close to the point light source. By bringing the light emitting device closer to the point light source, it becomes easy to adjust the light distribution by an optical system such as a lens.

The light emitting element 20 includes a mounting surface facing the substrate 10 and a light extraction surface 201 located on the opposite side of the mounting surface. As shown in FIG. 2A, when the light emitting element is flip-chip mounted, the surface on which the positive and negative electrodes of the light emitting element are located and the surface on the opposite side are the light extraction surfaces. The translucent member 30 may be bonded to the light emitting element 20 via the light guide member 50. The light guide member 50 may be located only between the light extraction surface 201 of the light emitting element and the translucent member 30 to bond the light emitting element 20 and the covering member 40, or may emit light from the light extraction surface 201 of the light emitting element. The light emitting element 20 and the covering member 40 may be adhered by covering the side surface 202 of the element. The light guide member 50 has a higher transmittance of light from the light emitting element 20 than the covering member 40. Therefore, the light guide member 50 is disposed on the side surface 202 of the light emitting element.
By covering up to this, the light emitted from the side surface of the light emitting element 20 can be easily extracted to the outside of the light emitting device through the light guide member 50, so that the light extraction efficiency can be improved.

When there are a plurality of light emitting elements 20, one light emitting element and the other light emitting element may have the same or different peak wavelengths. When the peak wavelengths of the one light emitting element and the other light emitting element are different, the light emitting element whose peak wavelength of light emission is in the range of 430 nm or more and less than 490 nm (wavelength range of blue region) and the peak wavelength of light emission of 490 nm or more and 570 nm or less And a light emitting element in the range (wavelength range of the green region). By doing so, the color rendering of the light emitting device can be improved.

As shown in FIGS. 2A and 2B, the translucent member 30 may contain the wavelength conversion substance 32. The wavelength conversion substance 32 is a member that absorbs at least a part of the primary light emitted from the light emitting element 20 and emits secondary light having a wavelength different from that of the primary light. By including the wavelength conversion substance 32 in the translucent member 30, it is possible to output mixed color light in which the primary light emitted from the light emitting element 20 and the secondary light emitted from the wavelength conversion substance 32 are mixed. For example, a blue LED for the light emitting element 20,
If a fluorescent material such as YAG is used for the wavelength conversion substance 32, a light emitting device that outputs white light obtained by mixing blue light of a blue LED and yellow light emitted by the fluorescent material when excited by the blue light is configured. can do.

The wavelength conversion substance may be uniformly dispersed in the translucent member, or the wavelength conversion substance may be unevenly distributed in the vicinity of the light emitting element rather than the upper surface of the translucent member 30. By doing so, even if the wavelength conversion material 32 which is weak against moisture is used, the base material 31 of the translucent member 30 also functions as a protective layer, so that the deterioration of the wavelength conversion material 32 can be suppressed. Further, as shown in FIGS. 2A and 2B, the translucent member 30 includes a layer containing the wavelength converting substance 32 and a layer 3 containing substantially no wavelength converting substance.
3 may be provided. Since the layer 33 that does not substantially contain the wavelength converting substance is located on the layer that contains the wavelength converting substance 32 in the translucent member 30, the layer 33 that does not substantially contain the wavelength converting substance may serve as a protective layer. Since the function is fulfilled, deterioration of the wavelength conversion substance 32 can be suppressed. Examples of the wavelength conversion material 32 that is weak against moisture include manganese activated fluoride phosphor.
The manganese-activated fluoride-based phosphor is a preferable member from the viewpoint of color reproducibility, since light emission having a relatively narrow spectral line width is obtained.

As shown in FIG. 2B, the via hole 15 is provided in a hole penetrating the front surface 111 and the back surface 112 of the base material 11. The via hole 15 includes a fourth wiring 151 that covers the surface of the through hole of the base material and a filling member 152 that is filled in the fourth wiring 151. The filling member 152 may be conductive or insulative. It is preferable to use a resin material for the filling member 152. In general, the resin material before curing has higher fluidity than the metal material before curing, and thus it is easy to fill the fourth wiring 151. Therefore, the use of the resin material for the filling member facilitates the manufacture of the substrate. Examples of the resin material that can be easily filled include epoxy resin. When a resin material is used as the filling member, it is preferable to contain an addition member in order to reduce the linear expansion coefficient. By doing so, the difference in the coefficient of linear expansion from the fourth wiring becomes small, so that it is possible to suppress the formation of a gap between the fourth wiring and the filling member due to heat from the light emitting element. As an addition member,
For example, silicon oxide can be used. When a metal material is used for the filling member 152,
The heat dissipation can be improved.

As shown in FIG. 4A, the area of the via hole 15 on the back surface is smaller than the area of the opening of the recess 16 on the back surface. Therefore, the via hole 15 penetrates the base material 11, but since it is smaller than the area of the opening of the recess 16 on the back surface, it is possible to prevent the strength of the base material 11 from decreasing.

As shown in FIG. 4A, it is preferable that the recess 16 be located between the via hole 15 and the adjacent via hole in a rear view. In other words, it is preferable that the recess 16 is located on a straight line connecting the via hole 15 and the adjacent via hole in the rear view. By doing so, heat from the light emitting element can be efficiently transferred from the via hole 15 to the third wiring 14 located in the recess 16. The heat transmitted to the third wiring 14 is transmitted to the mounting substrate via the joining member, so that the heat dissipation of the light emitting device is improved.

Further, as shown in FIG. 4A, it is preferable that the via hole 15 be located between the recess 16 and the adjacent recess in the rear view. In other words, it is preferable that the via hole 15 be located on a straight line connecting the recess 16 and the adjacent recess in the rear view. By doing so, the heat from the light emitting element can be efficiently transferred from the via hole 15 to the third wiring 14 located in the recess. This improves the heat dissipation of the light emitting device.

As shown in FIG. 2B, the light emitting element 20 includes at least a semiconductor laminate 23, and the semiconductor laminate 23 is provided with positive and negative electrodes 21 and 22. The positive and negative electrodes 21 and 22 are formed on the same surface of the light emitting element 20, and the light emitting element 20 is preferably flip-chip mounted on the substrate 10. As a result, a wire for supplying electricity to the positive and negative electrodes of the light emitting element is not required, so that the light emitting device can be downsized. Although the light emitting element 20 has the element substrate 24 in the present embodiment, the element substrate 24 may be removed. When the light emitting element 20 is flip-chip mounted on the substrate 10, the positive and negative electrodes 21 and 22 of the light emitting element have conductive adhesive members 60.
Is connected to the first wiring 12 via.

As shown in FIG. 2B, when the light emitting device 1000 includes a plurality of light emitting elements 20, it is preferable that the plurality of light emitting elements be arranged side by side in the first direction (X direction). By doing so, the width of the light emitting device 1000 in the second direction (Y direction) can be shortened, and thus the light emitting device can be thinned. The number of light emitting elements may be three or more, or one.

As shown in FIGS. 3C and 4A, the substrate 10 includes a base material 11, a first wiring 12, and a second wiring 1.
3 and 3 are provided. The base material 11 includes a front surface 111 extending in a first direction that is a longitudinal direction and a second direction that is a lateral direction, a back surface 112 located on the opposite side of the front surface, and a bottom surface adjacent to the front surface 111 and orthogonal to the front surface 111. It has 113 and the upper surface 114 located on the opposite side of the bottom surface 113.

As shown in FIG. 4A, the light emitting device 1000 includes an insulating film 18 that covers a part of the second wiring 13.
May be provided. By providing the insulating film 18, it is possible to secure insulation on the back surface and prevent short circuits. Further, it is possible to prevent the second wiring from peeling off from the base material.

As shown in FIG. 5A, it is preferable that the longitudinal side surface 403 of the covering member 40 located on the bottom surface 113 side is inclined inside the light emitting device 1000 in the Z direction. By doing so, when mounting the light emitting device 1000 on the mounting substrate, contact between the side surface 403 of the covering member 40 and the mounting substrate is suppressed, and the mounting posture of the light emitting device 1000 is easily stabilized. Further, when the covering member 40 thermally expands, it is possible to suppress stress due to contact with the mounting substrate. Top surface 114
The longitudinal side surface 404 of the covering member 40 located on the side is the light emitting device 1000 in the Z direction.
It is preferable to incline inward. By doing so, the contact between the side surface of the covering member 40 and the suction nozzle (collet) is suppressed, and damage to the covering member 40 during the suction of the light emitting device 1000 can be suppressed. Further, when the light emitting device 1000 is incorporated in a lighting unit or the like, the upper surface 114 of the base material 11 is preferentially contacted with the peripheral members over the side surfaces 404 of the covering member 40, thereby suppressing the stress related to the covering member 40. be able to. Thus, the bottom surface 113
The side surface 403 in the longitudinal direction of the covering member 40 located on the side and the side surface 404 in the longitudinal direction of the covering member 40 located on the upper surface 114 side are in the light emitting device 1000 from the back surface to the front surface direction (Z direction).
It is preferable to incline inward. The inclination angle θ of the covering member 40 can be appropriately selected, but from the viewpoint of the ease of achieving such effects and the strength of the covering member 40, it is preferably 0.3 ° or more and 3 ° or less, and 0.5 °. It is more preferably 2 ° or less and more preferably 0.7 ° or more and 1.5 ° or less.

As shown in FIGS. 5A and 5B, it is preferable that the right side surface and the left side surface of the light emitting device 1000 have substantially the same shape. By doing so, the light emitting device 1000 can be downsized.

As shown in FIG. 6, it is preferable that the lateral side 405 of the covering member 40 and the lateral side 105 of the substrate 10 are substantially on the same plane. By doing so, the width in the longitudinal direction (X direction) can be shortened, so that the light emitting device can be downsized.

<Embodiment 2>
The light emitting device 2000 according to the second embodiment of the present invention shown in FIGS. 7 to 9B is different from the light emitting device 1000 according to the first embodiment in the number of light emitting elements mounted on the substrate and the depressions provided in the base material. And the number of via holes is different. The shape of the recess 16 is similar to that of the first embodiment.

As shown in FIG. 8A, in the light emitting device 2000, as in the first embodiment, the depth of the recess in the front direction from the back surface is deeper on the bottom surface side than on the top surface side. The thickness can be made thicker than the thickness of the base material located on the bottom surface side of the depression. This makes it possible to prevent the strength of the base material from decreasing. Further, since the depth of the recess on the bottom surface increases the volume of the bonding member formed in the recess, the bonding strength between the light emitting device 2000 and the mounting substrate can be improved.

As shown in FIG. 8B, the number of light emitting elements may be one. Since the number of light emitting elements is one, the width in the first direction (X direction) can be made smaller than that in the case where there are a plurality of light emitting elements, so that the light emitting device can be downsized. Since the width of the light emitting device in the first direction (X direction) is shortened, the number of depressions may be changed appropriately. For example, as shown in FIG. 9A, the number of depressions 16 may be two. The number of the recesses 16 may be one or three or more.

As shown in FIG. 9B, it is preferable that the plurality of via holes 15 are located between the recess 16 and the adjacent recesses in a rear view. In other words, it is preferable that the plurality of via holes 15 are located on a straight line connecting the recess 16 and the adjacent recess in the rear view. By doing so, the heat from the light emitting element can be efficiently transferred from the via hole 15 to the third wiring 14 located in the recess. This improves the heat dissipation of the light emitting device.

<Embodiment 3>
The light emitting device 3000 according to the third exemplary embodiment of the present invention shown in FIGS. 10 to 14 is different from the light emitting device 1000 according to the first exemplary embodiment in that a recess 16 having a different shape is provided.

The light emitting device 3000, like the light emitting device 1000, includes a substrate 10, at least one light emitting element 20, and a covering member 40. The substrate 10 includes a base material 11, first wirings 12, and second wirings.
The wiring 13, the third wiring 14, and the via hole 15 are provided. The base material 11 includes a front surface 111 extending in a first direction that is a longitudinal direction and a second direction that is a lateral direction, a back surface 112 located on the opposite side of the front surface, and a bottom surface adjacent to the front surface 111 and orthogonal to the front surface 111. 113, a top surface 114 opposite to the bottom surface 113, and a side surface 115 located between the front surface 111 and the back surface 112. The base material 11 further has a plurality of depressions 16. The plurality of recesses 16 includes a back surface 112 and a bottom surface 1.
13 and a central recess 161 opening to the rear surface 13 and an end recess 162 opening to the back surface 112, the bottom surface 113, and the side surface 115. The third wiring 14 covers the inner wall of the recess 16 and is electrically connected to the second wiring 13.

As shown in FIG. 14, the light emitting device 3000 includes a central recess 161 in the front direction from the back surface.
And / or the depth of the end recess 162 is deeper on the bottom surface side than on the upper surface side, so that the thickness of the base material located on the upper surface side of the central recess 161 and / or the end recess 162 is reduced to the central recess 161 and / or the end. It can be made thicker than the thickness of the base material located on the bottom surface side of the recess 162. This makes it possible to prevent the strength of the base material from decreasing. Further, since the central recess 161 and / or the end recess 162 on the bottom surface side is deep, the volume of the bonding member formed in the central recess 161 and / or the end recess 162 increases, so that the light emitting device 3000 and the mounting substrate are mounted. It is possible to improve the bonding strength with. At least one central recess 161 and / or end recess 162 may be provided.

The end recess 162 also opens in the side surface 115 of the base material, as shown in FIGS. As a result, the bonding member is also located on the side surface 115 side of the base material, and therefore the light emitting device 3000 is further provided.
It is possible to improve the bonding strength between the and mounting substrate. When the light emitting device 3000 is a side surface light emitting type in which the bottom surface 113 of the base material 11 and the mounting substrate are opposed to each other, the end recess 16 is particularly formed.
2 is preferably provided. By providing the end depression 162, the side surface 115 of the base material
Since the light emitting device 3000 can be fixed, it is possible to suppress the occurrence of the Manhattan phenomenon in which the light emitting device 3000 tilts on the mounting substrate or the back surface of the base material rises to face the mounting substrate. At least one end recess 162 may be provided, but a plurality of end recesses 162 are preferred. The presence of the plurality of end recesses 162 can further improve the bonding strength between the light emitting device 3000 and the mounting substrate. When there are a plurality of end recesses 162, it is preferable that the end recesses are located at both ends of the base material in a rear view. By doing so, it is possible to further suppress the occurrence of the Manhattan phenomenon.

In a rear view, when the shape of the central depression 161 is a substantially semicircular shape that is a half of a circular shape, and the shape of the end depression 162 is a shape that is approximately a quarter of a circular shape, the central depression 161 and the end are Part depression 1
The circular diameters of 62 may be different or substantially the same. Central recess 161 and end recess 16
If the diameters of the two circular shapes are substantially the same, the central recess 161 and the end recess 1 can be formed by one drill.
Since 62 can be formed, it is preferable. Further, when the central recess 161 and the end recess 162 have an inclined part that is inclined from the bottom surface 113 in the direction in which the thickness of the base material 11 increases in the cross-sectional view, the inclined part and the end recess 162 of the central recess 161 are included. The angles of the inclined portions may be different or substantially the same. It is preferable that the angle of the inclined portion of the central depression 161 and the angle of the inclined portion of the end depression 162 be substantially the same because the central depression 161 and the end depression 162 can be formed by one drill.

As shown in FIGS. 15 and 16, one translucent member 30 may be positioned on a plurality of light emitting elements. By doing so, the area of the translucent member in the front view can be increased, so that the light extraction efficiency of the light emitting device is improved. Further, since the light emitting device has only one light emitting surface, uneven brightness of the light emitting device can be reduced.

When one light-transmissive member 30 is located on a plurality of light emitting elements, each light emitting element 20
The light guide member 50 that joins the transparent member 30 and the transparent member 30 may be connected to each other or may be separated from each other. As shown in FIG. 16, it is preferable that the light guide member is positioned so as to connect between one light emitting element and the other light emitting element. By doing so, the light of the light emitting element can be guided to the translucent member through the light guide member from between the one light emitting element and the other light emitting element, thereby reducing the uneven brightness of the light emitting device. can do. Further, since the portion of the covering member located between the one light emitting element and the other light emitting element is reduced, the covering member can be prevented from being deteriorated by the light from the light emitting element. As the light guide member, it is preferable to use a material that is less likely to be deteriorated by the light from the light emitting element than the covering member.

<Embodiment 4>
The light emitting device 4000 according to the fourth embodiment of the present invention shown in FIGS. 17 to 21 is different from the light emitting device 2000 according to the second embodiment in that it includes the recess 16 having a different shape.

As shown in FIG. 21, the light emitting device 4000 includes an end recess 162. Since the depth of the end recess in the front direction from the back surface is deeper on the bottom surface side than on the top surface side, the thickness of the base material located on the top surface side of the end recess is greater than the thickness of the base material located on the bottom surface side of the recess. Can be thickened.
This makes it possible to prevent the strength of the base material from decreasing. Moreover, since the volume of the bonding member formed in the end recess increases because the end recess on the bottom surface side is deep, it is possible to improve the bonding strength between the light emitting device 4000 and the mounting substrate.

The end recess 162 also opens into the side surface 115 of the substrate, as shown in FIGS. As a result, the bonding member is also positioned on the side surface 115 side of the base material, and therefore the light emitting device 4000 is further provided.
It is possible to improve the bonding strength between the and mounting substrate.

<Fifth Embodiment>
The light emitting device 5000 according to the fifth exemplary embodiment of the present invention shown in FIG. 22 is different from the light emitting device 4000 according to the fourth exemplary embodiment in that a central recess 161 is provided.

Since the light emitting device 5000 is provided with the central recess 161 and the end recess 162, the number of places where it can be fixed by the bonding member increases, so that the bonding strength between the light emitting device and the mounting substrate can be improved. In addition, the depth of the central recess 161 and / or the end recess 162 in the direction from the back surface to the front surface is deeper on the bottom surface side than on the top surface side. Thereby, the bonding strength between the light emitting device 5000 and the mounting substrate can be improved.

<Sixth Embodiment>
The light emitting device 6000 according to the sixth exemplary embodiment of the present invention shown in FIG. 23 is different from the light emitting device 1000 according to the first exemplary embodiment in the shape of the second wiring and the insulating film and a depression (central depression) in the center of the light emitting device. The difference is that it does not have.

The second wiring 13 of the light emitting device 6000 includes an exposed portion 131 that is located between the two end recesses and is exposed from the insulating film 18 in a rear view. The exposed portion 131 is surrounded by the insulating film 18 except for the bottom surface 113 side. By disposing the bonding member on the exposed portion 131, the bonding strength between the light emitting device and the mounting substrate can be improved. The shape of the exposed portion 131 in the rear view may be a square shape, a hemispherical shape, or any shape. The shape of the exposed portion 131 in rear view can be easily changed by changing the shape of the insulating film. The shape of the exposed portion 131 in the rear view is that the narrow portion 132 is provided on the bottom surface side, and the wide portion 133 is provided at a position extended in the second direction (Y direction).
Is preferably provided. By disposing the narrowed portion, it is possible to prevent the flux or the like contained in the joining member from penetrating below the light emitting element along the surface of the exposed portion 131 when the light emitting device is mounted. it can. In addition, the second wiring 1 exposed from the insulating film 18
It is preferable that the shape of 3 is located symmetrically with respect to the center line of the base material parallel to the second direction (Y direction). By doing so, self-alignment works effectively when the light emitting device is mounted on the mounting substrate via the bonding member, and the light emitting device can be mounted within the mounting range with high accuracy.

<Embodiment 7>
The light emitting device 7000 according to the seventh embodiment of the present invention shown in FIG. 24 is different from the light emitting device 4000 according to the fourth embodiment in the shapes of the second wiring and the insulating film.

Similarly to the light emitting device 6000, the second wiring 13 of the light emitting device 7000 includes an exposed portion 131 that is located between the two end recesses in a rear view and is exposed from the insulating film 18. Exposed part 13
1 is surrounded by the insulating film 18 except for the bottom surface 113 side. By disposing the bonding member on the exposed portion 131, the bonding strength between the light emitting device 7000 and the mounting substrate can be improved.

The shape of the land pattern of the mounting substrate on which the light emitting device is mounted is not particularly limited and may be a substantially square shape or a substantially circular shape. For example, as shown in FIG. 25A, the land pattern of the mounting substrate on which the light emitting device according to the first embodiment is mounted has a wide portion W10 having a wide width in the X direction.
And a narrow portion W9 having a narrow width. When the narrow portion W9 is located at a position overlapping the dent in the bottom view, the self-alignment property when mounting the light emitting device on the mounting substrate can be improved. Further, since the land pattern includes the wide portion W10, the area of the land pattern in the bottom view can be increased. Accordingly, it is possible to suppress the variation in the thickness of the joining member. Further, as in the light emitting device according to the first embodiment, the land pattern of the mounting board on which the light emitting device in which the depth of the center of the recess is the maximum depth of the recess in the Z direction is mounted is as shown in FIG. 25B. The length W12 in the Z direction at the center of the land pattern is preferably longer than the length W11 in the Z direction at the end of the land pattern. By doing so, the self-alignment property when mounting the light emitting device on the mounting substrate can be improved. Further, as shown in FIG. 25C, the land pattern has a wide portion W10 and a narrow portion W9.
And the length W14 in the Z direction at the center in the narrow portion of the land pattern is
It may be longer than the length W13 of the end portion of the narrow portion of the land pattern in the Z direction. By doing so, it is possible to improve the self-alignment property when mounting the light emitting device according to the first embodiment on the mounting substrate and to suppress the variation in the thickness of the bonding member.

In addition, as in the light emitting device according to the fourth embodiment, the land pattern of the mounting board on which the light emitting device is mounted, in which the depth of the recess in the Z direction becomes deeper as the distance from the center of the light emitting device is increased, The length W15 in the Z direction of the land pattern on the side far from the center of
The land pattern on the side closer to the center of the light emitting device is preferably longer than the length W16 in the Z direction. By doing so, the self-alignment property when mounting the light emitting device on the mounting substrate can be improved. Further, as shown in FIG. 26B, the land pattern includes a wide portion W10 having a wide width and a narrow portion W9 having a narrow width in the X direction, and the narrow portion of the land pattern on the side far from the center of the light emitting device. It is preferable that the length W17 of the end portion in the Z direction is longer than the length W18 in the Z direction of the end portion of the narrow portion of the land pattern on the side closer to the center of the light emitting device. When the narrow portion is located at a position overlapping the end recess in the bottom view, the self-alignment property when mounting the light emitting device on the mounting substrate can be improved. In addition, since the land pattern includes the wide portion, the area of the land pattern in bottom view can be increased. Accordingly, it is possible to suppress the variation in the thickness of the joining member. Further, the length W17 of the end of the narrow portion of the land pattern on the side far from the center of the light emitting device in the Z direction is the length in the Z direction of the end of the narrow portion of the land pattern on the side closer to the center of the light emitting device. Since the length is longer than W18, the self-alignment property when mounting the light emitting device on the mounting substrate can be improved.

<Embodiment 8>
The light emitting device 8000 according to the eighth embodiment of the present invention shown in FIGS. 27 to 30 is different from the light emitting device 1000 according to the first embodiment in the number of light emitting elements mounted on the substrate and the depressions provided in the base material. Also, the number of via holes and the shape of the translucent member are different. The shape of the recess 16 is similar to that of the first embodiment.

As shown in FIG. 28A, in the light emitting device 8000, as in the first embodiment, the depth of the recess in the front direction from the back surface is deeper on the bottom surface side than on the top surface side. The thickness can be made thicker than the thickness of the base material located on the bottom surface side of the depression. This makes it possible to prevent the strength of the base material from decreasing. In addition, since the depth of the recess on the bottom surface increases the volume of the bonding member formed in the recess, the bonding strength between the light emitting device 8000 and the mounting substrate can be improved.

As shown in FIG. 28B, the number of light emitting elements may be three. The three light emitting elements may have the same peak wavelength, or the three light emitting elements may have different peak wavelengths. The two light emitting elements may have the same peak wavelength and the one light emitting element may have the same peak wavelength. It may be different from the peak wavelength. In the present specification, the same peak wavelength of the light emitting element means that a fluctuation of about 5 nm is allowed. When the peak wavelengths of the light emitting elements are different, FIG.
As shown in, the first light-emitting element 20B having a peak emission wavelength of 430 nm or more and less than 490 nm (wavelength range of blue region), and a peak emission wavelength of 490 nm or more and 570 nm or less (wavelength range of green region) It is preferable that the second light emitting element 20G in In particular, the second light emitting element 20G is preferably a light emitting element having a half width of 40 nm or less, and more preferably a light emitting element having a half width of 30 nm or less. Thereby, the green light can easily have a sharp peak as compared with the case where the green light is obtained using the green phosphor. As a result, the liquid crystal display device including the light emitting device 8000 can achieve high color reproducibility.

The arrangement of the first light emitting element 20B and the second light emitting element 20G is not particularly limited, but as shown in FIG. 28B, the first light emitting element 20B that is a blue light emitting element and the second light emitting element that is a green light emitting element are sequentially arranged from the left as shown in FIG. 28B. 20G and the first light emitting element 20B, which is a blue light emitting element, are preferably arranged side by side. By arranging the first light emitting element 20B and the second light emitting element 20G alternately side by side, it is possible to improve the color mixing property of the light emitting device. The second light emitting element, the first light emitting element, and the second light emitting element may be arranged side by side from the left. Further, the number of the first light emitting elements 20B may be larger than the number of the second light emitting elements 20G, and the number of the second light emitting elements 20G is the first light emitting element depending on the light emitting characteristics to be obtained. More than 20B,
The number of the first light emitting elements 20B and the number of the second light emitting elements 20G may be the same. By adjusting the number of light emitting elements, a light emitting device having an arbitrary color tone and light amount can be obtained.

As shown in FIG. 28B, one light transmissive member 30 is used as the first light emitting element 20B and the second light emitting element 2.
When located above 0G, it is preferable that the wavelength conversion substance 32 absorbs the green light of the second light emitting element 20G and hardly emits red light. That is, it is preferable that the wavelength conversion substance 32 does not substantially convert green light into red light. The reflectance of the wavelength conversion material 32 with respect to green light is preferably 70% or more on average in the wavelength range of green light.
By using the wavelength conversion material 32 as a phosphor having a high reflectance for green light, that is, a phosphor that hardly absorbs green light, that is, a phosphor that hardly converts wavelength of green light, the light emitting device can be easily designed. can do.
If a red phosphor that absorbs a large amount of green light is used, the output balance of the light emitting device must be considered not only for the first light emitting element 20B but also for the second light emitting element 20G in consideration of wavelength conversion by the wavelength conversion material 32. Absent. On the other hand, when the wavelength conversion material 32 that hardly converts the wavelength of green light is used, the output balance of the light emitting device can be designed by only considering the wavelength conversion of the blue light emitted from the first light emitting element 20B.

Examples of such a preferable wavelength conversion substance 32 include the following red phosphors.
The wavelength conversion material 32 is at least one of these.
The first type is a red phosphor whose composition is represented by the following general formula (I).

A ₂ MF ₆ : Mn ⁴⁺ (I)

However, in the general formula (I), A is at least one selected from the group consisting of K, Li, Na, Rb, Cs, and NH ⁴⁺ , and M is a Group 4 element or a Group 14 element. It is at least one element selected from the group consisting of:

Group 4 elements are titanium (Ti), zirconium (Zr) and hafnium (Hf).
Group 14 elements include silicon (Si), germanium (Ge), tin (Sn) and lead (Pb).
Is.
As a specific example of the first type of red phosphor, K ₂ SiF ₆ : Mn ⁴⁺ , K ₂ (Si, Ge
^{_{) F 6: Mn 4+, K}} 2 TiF 6: can be mentioned ^{Mn 4+.}

The second type is a red phosphor whose composition is represented by 3.5MgO.0.5MgF ₂ .GeO ₂ : Mn ⁴⁺ or a red phosphor whose composition is represented by the following general formula (II). .

(X-a) MgO · a (Ma) O · b / 2 (Mb) 2 O 3 · yMgF 2 · c (Mc) X
_{2 · (1-d-e} ) GeO 2 · d (Md) O 2 · e (Me) 2 O 3: Mn 4+ (I
I)

However, in the general formula (II), Ma is at least one selected from Ca, Sr, Ba and Zn, Mb is at least one selected from Sc, La and Lu, and M
c is at least one selected from Ca, Sr, Ba and Zn, X is at least one selected from F and Cl, and Md is at least 1 selected from Ti, Sn and Zr. And Me is at least one selected from B, Al, Ga, and In. Also, for x, y, a, b, c, d, and e, 2 ≦ x ≦ 4, 0 <y ≦ 2, 0 ≦ a ≦ 1.5,
0 ≦ b <1, 0 ≦ c ≦ 2, 0 ≦ d ≦ 0.5, and 0 ≦ e <1.

Since the light emitting device 8000 has three light emitting elements, the width in the first direction (X direction) tends to be longer than that in the case where the number of light emitting elements is one. Therefore, the numbers of depressions and via holes may be changed appropriately. For example, as shown in FIG. 30, the number of depressions 16 and the number of via holes may be four.

As shown in FIG. 31, one light transmissive member 30 may be located on each of the first light emitting element and the second light emitting element, and one light transmissive member 30 may be positioned as shown in FIG. 28B. However, it may be located on a plurality of light emitting elements. As shown in FIG. 31, when one light-transmissive member 30 is located on each of the first light-emitting element and the second light-emitting element, the light-transmissive member 30 located on the first light-emitting element 20B. The material of the wavelength conversion substance 32 contained in the translucent member 30 located on the second light emitting element 20G may be the same or different. For example, when the wavelength conversion substance 32 hardly absorbs the green light of the second light emitting element 20G and emits the red light, the first
The translucent member 30 located on the light emitting element 20B contains the wavelength conversion substance 32 which is a red phosphor, and the translucent member 30 located on the second light emitting element 20G contains the wavelength conversion material which is a red phosphor. The substance 32 may not be contained. By doing so, the output balance of the light emitting device can be designed only by considering the wavelength conversion of the blue light emitted from the first light emitting element 20B. When one translucent member 30 is located on each of the first light emitting element and the second light emitting element,
A covering member is formed between the translucent member 30 located on the first light emitting element 20B and the translucent member 30 located on the second light emitting element 20G. As shown in FIG. 28B, when one translucent member 30 is positioned on a plurality of light emitting elements, the translucent member 30 in a front view.
Since the area can be increased, the light extraction efficiency of the light emitting device is improved. Further, since the light emitting device has only one light emitting surface, uneven brightness of the light emitting device can be reduced.

When one light-transmissive member 30 is located on a plurality of light emitting elements, each light emitting element 20
The light guide member 50 that joins the transparent member 30 and the transparent member 30 may be connected to each other or may be separated from each other. As shown in FIG. 28B, it is preferable that the light guide member 50 be positioned so as to connect between one light emitting element and the other light emitting element. By doing so, the light of the light emitting element can be guided to the translucent member through the light guide member from between the one light emitting element and the other light emitting element, thereby reducing the uneven brightness of the light emitting device. can do.

As shown in FIGS. 28B and 31, the translucent member 30 includes a layer containing the wavelength conversion substance 32,
And a layer 33 which does not substantially contain the wavelength conversion substance. Since the layer 33 that does not substantially contain the wavelength converting substance is located on the layer that contains the wavelength converting substance 32 in the translucent member 30, the layer 33 that does not substantially contain the wavelength converting substance may serve as a protective layer. Since the function is fulfilled, deterioration of the wavelength conversion substance 32 can be suppressed. As shown in FIG. 31, when one translucent member 30 is located on each of the first light emitting element and the second light emitting element, the translucent member 30 located on the first light emitting element 20B. The thickness of the layer 33 that does not substantially contain the wavelength conversion substance and the thickness of the layer 33 that does not substantially contain the wavelength conversion substance 30 located on the second light emitting element 20G are the same or different. Good. In addition, when one light-transmissive member 30 is located on each of the first light-emitting element and the second light-emitting element, the wavelength conversion material of the light-transmissive member 30 located on the first light-emitting element 20B. The thickness of the layer containing 32 and the thickness of the layer containing the wavelength conversion substance 32 of the translucent member 30 located on the second light emitting element 20G may be the same or different. In this specification, the same thickness means that a difference of about 5 μm is allowed.

  Hereinafter, each component of the light emitting device according to the embodiment of the present invention will be described.

(Substrate 10)
The substrate 10 is a member on which the light emitting element is placed. The substrate 10 includes at least the base material 11,
The first wiring 12, the second wiring 13, the third wiring 14, and the via hole 15 are included.

(Base material 11)
The base material 11 can be configured using an insulating member such as resin or fiber reinforced resin, ceramics, or glass. Examples of the resin or fiber reinforced resin include epoxy, glass epoxy, bismaleimide triazine (BT), and polyimide. Examples of ceramics include aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, and mixtures thereof. Of these base materials, it is particularly preferable to use a base material having physical properties close to the linear expansion coefficient of the light emitting element. The lower limit of the thickness of the base material can be appropriately selected, but from the viewpoint of the strength of the base material, it is preferably 0.05 mm or more, and more preferably 0.2 mm or more. Further, the upper limit of the thickness of the base material is preferably 0.5 mm or less from the viewpoint of the thickness (depth) of the light emitting device, and 0
． It is more preferably 4 mm or less.

(First wiring 12, second wiring 13, third wiring 14)
The first wiring is arranged in front of the substrate and electrically connected to the light emitting element. The second wiring is arranged on the back surface of the substrate and is electrically connected to the first wiring through the via hole. The third wiring is
It covers the inner wall of the depression and is electrically connected to the second wiring. The first wiring, the second wiring, and the third wiring can be formed of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or an alloy thereof. It may be a single layer or a multilayer of these metals or alloys. In particular, copper or copper alloy is preferable from the viewpoint of heat dissipation. In addition, the surface layer of the first wiring and / or the second wiring is a layer of silver, platinum, aluminum, rhodium, gold or an alloy thereof, from the viewpoint of wettability and / or light reflectivity of the conductive adhesive member. May be provided.

(Beer hole 15)
The via hole 15 is a member that is provided in a hole that penetrates the front surface and the back surface of the base material 11 and electrically connects the first wiring and the second wiring. The via hole 15 is composed of a fourth wiring 151 that covers the surface of the through hole of the base material, and a filling member 152 filled in the fourth wiring 151. For the fourth wiring 151, a conductive member similar to the first wiring, the second wiring, and the third wiring can be used. The filling member 152 may be a conductive member or an insulating member.

(Insulating film 18)
The insulating film 18 is a member for ensuring insulation on the back surface and preventing a short circuit. The insulating film may be formed of any of those used in the art. For example, a thermosetting resin or a thermoplastic resin may be used.

(Light emitting element 20)
The light emitting element 20 is a semiconductor element that emits light by applying a voltage, and a known semiconductor element made of a nitride semiconductor or the like can be applied. As the light emitting element 20, for example, an LED
There is a tip. The light emitting element 20 includes at least the semiconductor stacked body 23, and in many cases, further includes an element substrate 24. The top view shape of the light emitting element is preferably a rectangular shape, particularly a square shape or a rectangular shape elongated in one direction, but may be another shape, for example, a hexagonal shape can improve the light emission efficiency. The side surface of the light emitting element may be perpendicular to the upper surface, or may be inclined inward or outward. Further, the light emitting element has positive and negative electrodes. Positive and negative electrodes are gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten,
It can be composed of palladium, nickel or alloys thereof. The emission peak wavelength of the light emitting element can be selected from the ultraviolet region to the infrared region depending on the semiconductor material and its mixed crystal ratio. As the semiconductor material, it is preferable to use a nitride semiconductor, which is a material that can emit light of a short wavelength that can efficiently excite the wavelength conversion substance. Nitride semiconductors are mainly represented by the general formula In _{x
Al y Ga 1-x-y} N (0 ≦ x, 0 ≦ y, x + y ≦ 1) is represented by. The emission peak wavelength of the light emitting element is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and more preferably 450 nm or more and 475 nm or less, from the viewpoints of light emission efficiency, excitation of the wavelength conversion substance, and color mixing relationship with the light emission. Even more preferable. In addition, InAlG
It is also possible to use aAs-based semiconductor, InAlGaP-based semiconductor, zinc sulfide, zinc selenide, silicon carbide, or the like. The element substrate of the light emitting element is mainly a crystal growth substrate capable of growing a semiconductor crystal forming a semiconductor laminated body, but may be a bonding substrate for bonding to a semiconductor element structure separated from the crystal growth substrate. . Since the element substrate has a light-transmitting property, flip-chip mounting can be easily adopted and light extraction efficiency can be easily improved. As the base material of the element substrate,
Examples thereof include sapphire, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, zinc sulfide, zinc oxide, zinc selenide and diamond. Of these, sapphire is preferred. The thickness of the element substrate can be selected as appropriate, for example, 0
． It is preferably from 0.2 mm to 1 mm, and from the viewpoint of the strength of the element substrate and / or the thickness of the light emitting device, it is preferably 0.05 mm to 0.3 mm.

(Translucent member 30)
The translucent member is a member provided on the light emitting element and protecting the light emitting element. The translucent member is
It is composed of at least the following base materials. In addition, the translucent member can function as a wavelength conversion substance by including the following wavelength conversion substance 32 in the base material.
Even when the translucent member includes a layer containing a wavelength converting substance and a layer containing substantially no wavelength converting substance, the base material of each layer is configured as follows. The base material of each layer may be the same or different. However, it is not essential that the translucent member has a wavelength conversion substance. Also,
As the translucent member, a sintered body of a wavelength converting substance and an inorganic substance such as alumina, or a plate crystal of the wavelength converting substance can also be used.

(Base material 31 of translucent member)
The base material 31 of the translucent member may be any material that has translucency with respect to the light emitted from the light emitting element. The term "translucency" means that the light transmittance of the light emitting element at the emission peak wavelength is preferably 60% or more, more preferably 70% or more, and even more preferably 80% or more. Say that. As the base material of the translucent member, silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, or modified resin thereof can be used. It can be glass. Of these, silicone resins and modified silicone resins are preferable because they have excellent heat resistance and light resistance. Specific silicone resins include dimethyl silicone resin, phenyl-methyl silicone resin, and diphenyl silicone resin. The translucent member can be formed by forming one kind of these base materials in a single layer or by laminating two or more kinds of these base materials. In addition, the "modified resin" in this specification includes a hybrid resin.

The base material of the translucent member may contain various fillers in the resin or glass.
Examples of the filler include silicon oxide, aluminum oxide, zirconium oxide, zinc oxide and the like. As the filler, one of these may be used alone, or two or more of these may be used in combination. In particular, silicon oxide having a small coefficient of thermal expansion is preferable. Further, by using nanoparticles as the filler, scattering of light emitted from the light emitting element is increased,
It is also possible to reduce the amount of wavelength conversion material used. The nanoparticles are particles having a particle diameter of 1 nm or more and 100 nm or less. Further, the “particle size” in the present specification is defined by, for example, D ₅₀ .

(Wavelength conversion material 32)
The wavelength conversion material absorbs at least a part of the primary light emitted from the light emitting element and emits secondary light having a wavelength different from that of the primary light. The wavelength conversion material is one of the following specific examples,
Alternatively, two or more kinds can be used in combination.

Examples of the wavelength conversion substance that emits green light include yttrium-aluminum-garnet-based phosphors (for example, Y ₃ (Al, Ga) ₅ O ₁₂ : Ce) and lutetium-aluminum-garnet-based phosphors (for example, Lu ₃ (Al, Ga)). ₅ O ₁₂ : Ce), terbium-aluminum-garnet-based phosphor (for example, Tb ₃ (Al, Ga) ₅ O ₁₂ : Ce) -based phosphor, and silicate-based phosphor (for example (Ba, Sr) ₂ SiO ₄ : Eu). ), Chlorosilicate-based phosphor (
For example, Ca ₈ Mg (SiO ₄ ) ₄ Cl ₂ : Eu), β-sialon-based phosphor (for example, Si _{6
-Z Al z O z N 8-} z: Eu (0 <z <4.2)), SGS phosphor (e.g. SrGa
₂ S ₄ : Eu) and the like. As a wavelength conversion substance for yellow emission, an α-sialon-based phosphor (for example, M _z (Si, Al) ₁₂ (O, N) ₁₆ (where 0 <z ≦ 2, M is L
i, Mg, Ca, Y, and lanthanide elements excluding La and Ce). In addition to the above, the wavelength conversion material that emits green light includes a wavelength conversion material that emits yellow light. Further, for example, in the yttrium-aluminum-garnet-based phosphor, the emission peak wavelength can be shifted to the long wavelength side by substituting a part of Y with Gd, and yellow emission is possible. Also,
Among these, there is a wavelength conversion substance capable of emitting orange light. As a wavelength conversion substance that emits red light, a nitrogen-containing calcium aluminosilicate (CASN or SCASN) -based phosphor (for example ((
Sr, Ca) AlSiN ₃ : Eu) and the like. In addition, in the manganese-activated fluoride phosphor (a phosphor represented by general formula _{(I) A 2 [M 1} -a Mn a F 6] ( where the general formula (I), A is At least one selected from the group consisting of K, Li, Na, Rb, Cs, and NH ₄ , M is at least one element selected from the group consisting of Group 4 elements and Group 14 elements, a satisfies 0 <a <0.2)). As a typical example of this manganese-activated fluoride-based phosphor, a manganese-activated potassium fluorosilicate phosphor (
For example, K ₂ SiF ₆ : Mn).

(Coating member 40)
From the viewpoint of upward light extraction efficiency, the light-reflecting coating member preferably has a light reflectance of 70% or more at the emission peak wavelength of the light emitting element, more preferably 80% or more, and 90% or more. It is even more preferable that it is at least%. Further, the covering member is preferably white. Therefore, the covering member preferably contains the white pigment in the base material. The coating member is in a liquid state before being cured. The covering member can be formed by transfer molding, injection molding, compression molding, potting, or the like.

(Base material of covering member)
Resin can be used as the base material of the covering member, and for example, silicone resin, epoxy resin,
Examples thereof include phenolic resin, polycarbonate resin, acrylic resin, and modified resins thereof. Above all, silicone resins and modified silicone resins have excellent heat resistance and light resistance,
preferable. Specific silicone resins include dimethyl silicone resin, phenyl-methyl silicone resin, and diphenyl silicone resin. Further, the base material of the covering member is
You may contain the same filler as the above-mentioned translucent member.

(White pigment)
White pigments include titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate,
One of barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, and silicon oxide can be used alone or in combination of two or more. The shape of the white pigment can be appropriately selected and may be indefinite or crushed, but spherical is preferable from the viewpoint of fluidity. The particle size of the white pigment may be, for example, about 0.1 μm or more and 0.5 μm or less, but the smaller the particle size, the better in order to enhance the effects of light reflection and coating. The content of the white pigment in the light-reflecting coating member can be appropriately selected, but from the viewpoint of light reflectivity and viscosity in a liquid state, for example, 10 wt% or more and 80 wt% or less is preferable, and 2 wt% or less is preferable.
0 wt% or more and 70 wt% or less is more preferable, and 30 wt% or more and 60 wt% or less is even more preferable. In addition, "wt%" is a weight percent and represents the ratio of the weight of the material to the total weight of the light-reflecting coating member.

(Light guide member 50)
The light guide member is a member that bonds the light emitting element and the translucent member and guides the light from the light emitting element to the translucent member. Examples of the base material of the light guide member include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, and modified resins thereof. Of these, silicone resins and modified silicone resins are preferable because they have excellent heat resistance and light resistance. Specific silicone resins include dimethyl silicone resin, phenyl-methyl silicone resin,
A diphenyl silicone resin is mentioned. Further, the base material of the light guide member may contain the same filler as that of the above-mentioned translucent member. Further, the light guide member can be omitted.

(Conductive adhesive member 60)
The conductive adhesive member is a member that electrically connects the electrode of the light emitting element and the first wiring. As the conductive adhesive member, bumps of gold, silver, copper, etc., metal paste containing metal powder of silver, gold, copper, platinum, aluminum, palladium, etc. and a resin binder, tin-bismuth-based, tin-
Any one of copper-based, tin-silver-based, gold-tin-based solder, and a brazing material such as a low melting point metal can be used.

A light emitting device according to an embodiment of the present invention includes a backlight device for a liquid crystal display, various lighting devices, a large display, various display devices such as advertisements and destination guidance, a projector device, a digital video camera, a facsimile, and a copying machine. , An image reading device in a scanner or the like.

1000, 2000 Light emitting device 10 Substrate 11 Base material 12 First wiring 13 Second wiring 14 Third wiring 15 Via hole
151 Fourth wiring
152 Filling Member 16 Dimple 18 Insulating Film 20 Light Emitting Element 30 Translucent Member 40 Covering Member 50 Light Guide Member 60 Conductive Adhesive Member

Claims (14)

A base material having a front surface extending in the first direction and the second direction, a back surface located opposite to the front surface, a bottom surface connecting the front surface and the back surface, and a top surface located opposite to the bottom surface. A first wiring arranged on the front surface, a second wiring arranged on the back surface, a via hole electrically connecting the first wiring and the second wiring, and a part of the second wiring. A substrate including an insulating film for covering,
At least one light-emitting element electrically connected to the first wiring and mounted on the first wiring;
A light-emitting device comprising: a light-reflecting covering member that covers a side surface of the light-emitting element and a front surface of the substrate,
The base material has a plurality of depressions that open to the back surface and the bottom surface,
The substrate includes a third wiring that covers inner walls of the plurality of depressions and that is electrically connected to the second wiring,
The plurality of recesses are separated from the via hole in a front view,
Each of the depths of the recesses in the front direction from the back surface is deeper on the bottom surface side than on the top surface side,
The covering member is located on each of the bottom surface side and the top surface side, and has two side surfaces along the first direction,
The side surface located on the bottom surface side and the side surface located on the top surface side are inclined inward in the front direction from the back surface .   The light emitting device according to claim 1, wherein in the bottom surface, the depression has a maximum depth in the center.   The light emitting device according to claim 1, wherein the recess has a semicircular shape on the back surface.   The light emitting device according to claim 1, wherein the maximum depth of the recess is 0.4 to 0.8 times the thickness of the base material.   The light emitting device according to claim 1, wherein each of the recesses has the same shape on the back surface.   The light emitting device according to claim 1, wherein, on the back surface, the plurality of dents are located symmetrically with respect to a center line parallel to the second direction.   The light emitting device according to claim 1, wherein a translucent member is located on the light emitting element.   The light emitting device according to claim 7, wherein the covering member covers a side surface of the translucent member.   The light emitting device according to claim 1, further comprising a plurality of the light emitting elements, wherein the plurality of the light emitting elements are arranged side by side in the first direction.   The light emitting device according to claim 1, wherein the via hole includes a fourth wiring and a filling member, and the filling member is a resin material.   The base material includes a side surface located between the front surface and the back surface, and at least one of the plurality of recesses is an end recess opening to the back surface, the bottom surface, and the side surface. The light-emitting device according to claim 1. The light emitting device according to claim 11, comprising a plurality of the end recesses, and the end recesses are located at both ends of the base material when viewed from the rear. Part of the second wiring is exposed from the insulating film, and the second wiring exposed from the insulating film is located symmetrically with respect to the center line of the base material parallel to the second direction. the light emitting device according to any one of claims 1 to 12. The inner wall of each of the plurality of depressions is, in a cross-sectional view perpendicular to the first direction, a parallel portion extending parallel to the bottom surface from the back surface to the front surface, and an end of the parallel portion on the front surface side, and a sloped portion extending toward the front side of the bottom surface, the light emitting device according to any one of claims 1 to 13.

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