JP6688543B2 - 半導体装置の製造方法及び半導体装置の製造装置 - Google Patents

半導体装置の製造方法及び半導体装置の製造装置 Download PDF

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JP6688543B2
JP6688543B2 JP2016067398A JP2016067398A JP6688543B2 JP 6688543 B2 JP6688543 B2 JP 6688543B2 JP 2016067398 A JP2016067398 A JP 2016067398A JP 2016067398 A JP2016067398 A JP 2016067398A JP 6688543 B2 JP6688543 B2 JP 6688543B2
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temporary
semiconductor chip
adhesive
semiconductor
main surface
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Japanese (ja)
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JP2017183457A (ja
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昇 朝日
昇 朝日
将次 仁村
将次 仁村
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Toray Engineering Co Ltd
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Toray Engineering Co Ltd
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Priority to JP2016067398A priority Critical patent/JP6688543B2/ja
Priority to CN201780032694.9A priority patent/CN109155304B/zh
Priority to PCT/JP2017/011088 priority patent/WO2017169944A1/ja
Priority to KR1020187027597A priority patent/KR102196325B1/ko
Publication of JP2017183457A publication Critical patent/JP2017183457A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
JP2016067398A 2016-03-30 2016-03-30 半導体装置の製造方法及び半導体装置の製造装置 Active JP6688543B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016067398A JP6688543B2 (ja) 2016-03-30 2016-03-30 半導体装置の製造方法及び半導体装置の製造装置
CN201780032694.9A CN109155304B (zh) 2016-03-30 2017-03-21 半导体装置的制造方法和半导体装置的制造装置
PCT/JP2017/011088 WO2017169944A1 (ja) 2016-03-30 2017-03-21 半導体装置の製造方法及び半導体装置の製造装置
KR1020187027597A KR102196325B1 (ko) 2016-03-30 2017-03-21 반도체 장치의 제조 방법 및 반도체 장치의 제조 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016067398A JP6688543B2 (ja) 2016-03-30 2016-03-30 半導体装置の製造方法及び半導体装置の製造装置

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JP2017183457A JP2017183457A (ja) 2017-10-05
JP6688543B2 true JP6688543B2 (ja) 2020-04-28

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JP (1) JP6688543B2 (zh)
KR (1) KR102196325B1 (zh)
CN (1) CN109155304B (zh)
WO (1) WO2017169944A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6349539B2 (ja) 2016-09-30 2018-07-04 株式会社新川 半導体装置の製造方法および実装装置
CN113013307A (zh) * 2021-03-01 2021-06-22 东莞市中麒光电技术有限公司 一种显示模块故障芯片修复方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3822043B2 (ja) * 2000-09-25 2006-09-13 太陽誘電株式会社 チップ部品組立体の製造方法
JP3718205B2 (ja) * 2003-07-04 2005-11-24 松下電器産業株式会社 チップ積層型半導体装置およびその製造方法
JP4824327B2 (ja) * 2005-03-16 2011-11-30 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
JP2007036143A (ja) * 2005-07-29 2007-02-08 Disco Abrasive Syst Ltd 半導体ウエーハの加工方法
JP2008177215A (ja) * 2007-01-16 2008-07-31 Sharp Corp 基板貼り合わせ方法および基板貼り合わせ装置
TWI482961B (zh) * 2009-11-16 2015-05-01 Rudolph Technologies Inc 接合基板的紅外線檢查
JP5289484B2 (ja) * 2011-03-04 2013-09-11 株式会社東芝 積層型半導体装置の製造方法
JP2012222038A (ja) * 2011-04-05 2012-11-12 Elpida Memory Inc 半導体装置の製造方法
TW201330217A (zh) * 2011-11-11 2013-07-16 Sumitomo Bakelite Co 半導體裝置之製造方法
WO2013133015A1 (ja) * 2012-03-07 2013-09-12 東レ株式会社 半導体装置の製造方法および半導体装置の製造装置
JP2015095499A (ja) * 2013-11-11 2015-05-18 東レ株式会社 半導体装置の製造方法
JP6454283B2 (ja) * 2013-11-27 2019-01-16 東レエンジニアリング株式会社 ３次元実装方法および３次元実装装置

Also Published As

Publication number Publication date
JP2017183457A (ja) 2017-10-05
WO2017169944A1 (ja) 2017-10-05
CN109155304A (zh) 2019-01-04
KR20180128412A (ko) 2018-12-03
CN109155304B (zh) 2021-10-22
KR102196325B1 (ko) 2020-12-29

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