JP6687137B2 - Vapor deposition mask, vapor deposition mask with frame, vapor deposition mask preparatory body, and method for manufacturing organic semiconductor device - Google Patents

Description

  The present invention relates to a vapor deposition mask, a vapor deposition mask with a frame, a vapor deposition mask preparatory body, and a method for manufacturing an organic semiconductor device.

  Along with the increase in the size of products using organic EL elements or the increase in the size of substrates, there is an increasing demand for size increase of vapor deposition masks. Further, the metal plate used for manufacturing a vapor deposition mask made of metal is also increasing in size. However, with the current metal processing technology, it is difficult to accurately form an opening in a large-sized metal plate, and it is not possible to cope with high definition of the opening. Further, when a vapor deposition mask made of only metal is used, its mass increases with an increase in size, and the total mass including the frame also increases, which causes a trouble in handling.

  Under such circumstances, in Patent Document 1, a metal mask provided with slits and a resin mask in which a plurality of openings, which are located on the surface of the metal mask and correspond to a pattern to be produced by vapor deposition, are arranged vertically and horizontally, are laminated. A vapor deposition mask obtained by the above is proposed. According to the vapor deposition mask proposed in Patent Document 1, both high definition and light weight can be satisfied even when the size is increased, and a high definition vapor deposition pattern can be formed. ing.

Japanese Patent No. 5288072

  The present invention provides a vapor deposition mask that can accurately inspect whether or not the shape pattern of the opening formed in the resin mask is normal while satisfying both high definition and light weight. And a vapor deposition mask preparation for obtaining the vapor deposition mask, a vapor deposition mask with a frame including the vapor deposition mask, and a method for manufacturing an organic semiconductor device using the vapor deposition mask with the frame. The main issue is to provide.

The vapor deposition mask of the present invention for solving the above problem includes a resin mask in which an opening corresponding to a pattern to be vapor-deposited is formed, and the light transmittance of the resin portion of the resin mask at a wavelength of 550 nm is 40% or less. is there.
In addition, the vapor deposition mask of the present invention for solving the above problem includes a resin mask in which an opening corresponding to a pattern to be vapor-deposited is formed, and a light transmittance of a wavelength of 450 nm to 650 nm of a resin portion of the resin mask. The maximum value is 40% or less.
Further, the vapor deposition mask of one embodiment is a vapor deposition mask in which a metal mask having a slit and a resin mask having an opening corresponding to a pattern to be vapor deposited at a position overlapping the slit are stacked. The resin mask is characterized in that the maximum value of light transmittance at a wavelength of 450 nm to 650 nm is 40% or less.
Further, the invention of one embodiment is a vapor deposition mask in which a metal mask having a slit and a resin mask having an opening corresponding to a pattern to be vapor-deposited at a position overlapping the slit are laminated, wherein the resin is The mask has a light transmittance of 40% or less at a wavelength of 550 nm.

  In the above invention, it is preferable that the resin mask contains a color material component. Further, the thickness of the resin mask is preferably 3 μm or more and less than 10 μm.

Further, the present invention for solving the above problems is a vapor deposition mask with a frame, wherein the vapor deposition mask is fixed to a frame.
Further, the vapor deposition mask with a frame of one embodiment is a vapor deposition mask with a frame in which the vapor deposition mask is fixed, and the vapor deposition mask is vapor-deposited at a position where the slit is formed on the metal mask and the slit. A resin mask having an opening corresponding to a pattern to be manufactured is laminated, and the resin mask has a maximum light transmittance of 40% or less at a wavelength of 450 nm to 650 nm.
In addition, the vapor deposition mask with a frame of one embodiment is a vapor deposition mask with a frame in which the vapor deposition mask is fixed, and the vapor deposition mask is located at a position where the slit is formed and the metal mask in which the slit is formed. A resin mask having an opening corresponding to a pattern to be formed by vapor deposition is laminated, and the resin mask has a light transmittance of 40% or less at a wavelength of 550 nm.

Further, the present invention for solving the above-mentioned problems is a vapor deposition mask preparation used for manufacturing a vapor deposition mask including a resin mask in which an opening corresponding to a pattern to be vapor-deposited is formed, and the resin mask is obtained. And a light transmittance of light having a wavelength of 550 nm is 40% or less.
Further, the present invention for solving the above-mentioned problems is a vapor deposition mask preparation used for manufacturing a vapor deposition mask including a resin mask in which an opening corresponding to a pattern to be vapor-deposited is formed, and the resin mask is obtained. And a maximum value of light transmittance at a wavelength of 450 nm to 650 nm of the resin plate is 40% or less.
Further, the vapor deposition mask preparation of one embodiment is a vapor deposition mask in which a metal mask having a slit and a resin mask having an opening corresponding to a pattern to be vapor deposited at a position overlapping the slit are stacked. A vapor deposition mask preparation for obtaining, wherein a metal mask having a slit provided on one surface of a resin plate is laminated, and the resin plate has a maximum light transmittance of 40 nm at a wavelength of 450 nm to 650 nm. % Or less.
Further, in one embodiment, the vapor deposition mask preparatory body obtains a vapor deposition mask in which a metal mask having a slit formed therein and a resin mask having an opening corresponding to a pattern to be produced by vapor deposition at a position overlapping the slit are laminated. In the vapor deposition mask preparation body for, a metal mask having a slit provided on one surface of a resin plate is laminated, and the resin plate has a light transmittance of 40% or less at a wavelength of 550 nm. To do.

Further, the present invention for solving the above-mentioned problems is a method for manufacturing an organic semiconductor device, which includes a step of forming a vapor deposition pattern on a vapor deposition target using the vapor deposition mask with a frame described above.
Further, the method for manufacturing an organic semiconductor device according to one embodiment includes a step of forming a vapor deposition pattern on a vapor deposition target using a vapor deposition mask with a frame in which the vapor deposition mask is fixed, and the step of forming the vapor deposition pattern comprises The vapor deposition mask fixed to the frame is formed by laminating a metal mask having a slit and a resin mask having an opening corresponding to a pattern to be vapor-deposited at a position overlapping with the slit. The mask is characterized in that the maximum value of light transmittance at a wavelength of 450 nm to 650 nm is 40% or less. The invention of one embodiment is a method for manufacturing an organic semiconductor device, which includes a step of forming a vapor deposition pattern on a vapor deposition target using a vapor deposition mask with a frame in which a vapor deposition mask is fixed, In the step of forming, the vapor deposition mask fixed to the frame is formed by laminating a metal mask having a slit and a resin mask having an opening corresponding to a pattern to be vapor deposited at a position overlapping the slit. Further, the resin mask is characterized in that the light transmittance at a wavelength of 550 nm is 40% or less.

  According to the vapor deposition mask and the vapor deposition mask with a frame of the present invention, it is possible to accurately inspect whether the shape pattern of the opening formed in the resin mask is normal while satisfying both high definition and light weight. It can be carried out. Further, according to the vapor deposition mask preparation of the present invention, the vapor deposition mask having the above characteristics can be easily manufactured. Further, according to the method for manufacturing an organic semiconductor element of the present invention, the organic semiconductor element can be manufactured with high accuracy.

(A) is the front view which looked at the vapor deposition mask of one embodiment from the metal mask side, and (b) is the AA sectional view of (a). It is the front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is the front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is the front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is the front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is the front view which looked at the vapor deposition mask of Embodiment (B) from the metal mask side. It is the front view which looked at the vapor deposition mask of Embodiment (B) from the metal mask side. (A)-(d) is a schematic sectional drawing of the vapor deposition mask which shows typically the state of the transmitted light which permeate | transmits a resin mask, (a)-(c) is the vapor deposition mask of one Embodiment. , (D) are comparative vapor deposition masks. It is a front view showing an example of a vapor deposition mask with a frame. It is a front view showing an example of a vapor deposition mask with a frame. It is a front view showing an example of a frame. (A)-(e) is a shading figure of sample 1, 2, 4-6 of a resin mask, respectively.

<< Evaporation mask >>
Hereinafter, the vapor deposition mask 100 of one embodiment of the present invention will be specifically described. As shown in FIG. 1, a vapor deposition mask 100 according to one embodiment includes a metal mask 10 having a slit 15 formed therein and a resin mask 20 having an opening 25 corresponding to a pattern to be produced by vapor deposition at a position overlapping the slit 15. And has a laminated structure. Note that FIG. 1A is a front view of the vapor deposition mask of one embodiment as seen from the metal mask 10 side, and FIG. 1B is a schematic cross-sectional view taken along the line AA of FIG.

(Resin mask)
As shown in FIG. 1, the resin mask 20 is provided with a plurality of openings 25. The vapor deposition mask 100 according to the embodiment of the present invention is characterized in that the resin mask 20 has a light transmittance of 40% or less at a wavelength of 550 nm.

When forming a vapor deposition pattern on the vapor deposition surface of the vapor deposition target using the vapor deposition mask 100 of the embodiment, the vapor deposition target surface of the vapor deposition target and the surface of the vapor deposition mask 100 on the resin mask 20 side are opposed to each other. The deposition is performed in a state where the deposition surface of the deposition target and the resin mask 20 of the deposition mask are in close contact with each other. Then, the vapor deposition material emitted from the vapor deposition source is attached to the vapor deposition surface of the vapor deposition target through the opening 25 formed in the resin mask 20, so that the vapor deposition material of the vapor deposition target is applied to the resin mask 20. A vapor deposition pattern corresponding to the formed opening 25 is produced. The vapor deposition method using the vapor deposition mask of one embodiment is not limited in any way. For example, a physical vapor deposition method (Physical) such as a sputtering method, a vacuum vapor deposition method, an ion plating method, or an electron beam vapor deposition method. Chemical vapor deposition methods such as vapor deposition, thermal CVD, plasma CVD, and photo-CVD.
Deposition) and the like.

  That is, in the method for producing a vapor deposition pattern on the vapor deposition surface of the vapor deposition target, the vapor deposition pattern formed on the vapor deposition surface of the vapor deposition target is determined by the opening pattern of the openings 25 formed in the resin mask 20. Will be done. From this, it is important that the opening pattern of the opening 25 is formed on the resin mask 20 of the vapor deposition mask 100 according to the vapor deposition pattern desired to be formed on the vapor deposition surface of the vapor deposition object. Prior to use, that is, after the vapor deposition mask is manufactured, the opening pattern of the openings 25 formed in the resin mask 20 of the vapor deposition mask 100 is desired to be formed on the vapor deposition surface of the vapor deposition target object. It is necessary to inspect whether the pattern is formed.

  As one of the inspection methods for determining whether or not the opening pattern of the opening 25 formed in the resin mask 20 of the vapor deposition mask 100 is in accordance with the vapor deposition pattern desired to be formed on the vapor deposition target surface of the vapor deposition object. Of the opening pattern formed in the resin mask 20 due to the shadow formed by irradiating the resin mask 20 with visible light and a region of the resin mask 20 that transmits the visible light and a region that does not or does not easily transmit the visible light. There is a way to do the inspection. Specifically, the resin mask 20 is irradiated with visible light from the surface side of the resin mask 20 which is not in contact with the metal mask 10, and the transmitted light is imaged by the camera from the surface side of the metal mask 10 which is not in contact with the resin mask 20. Alternatively, the resin mask 20 is irradiated with visible light from the surface side of the metal mask 10 which is not in contact with the resin mask 20, and the transmitted light is imaged by the camera from the surface side of the resin mask 20 which is not in contact with the metal mask 10. This is a method of inspecting the opening pattern formed in the resin mask 20 by the shadow caused by the transmitted light.

  In the case of performing the above-described inspection of the opening pattern, when the mask in which the opening is formed is a mask made of a metal material that does not transmit visible light, the shadow of the opening pattern in the opening formed in the mask is The contrast of light and shade is high, and the inspection of the opening pattern can be performed without any problem. On the other hand, when the mask in which the opening is formed is a mask made of a resin material that transmits visible light, the contrast of the shade of the opening pattern of the opening formed in the mask becomes low, This causes a problem that the inspection of the opening pattern cannot be sufficiently performed. That is, the metal mask 10 having the slits 15 and the resin mask 20 having the openings 25 corresponding to the pattern to be vapor-deposited at a position overlapping the slits 15 are laminated to obtain high definition and light weight. In the vapor deposition mask that can satisfy both of the requirements, there is an inherent problem that the opening pattern of the opening formed in the resin mask cannot be accurately inspected. However, in the above vapor deposition mask capable of satisfying both high definition and light weight, the transmittance of visible light when the resin mask 20 is irradiated with visible light, specifically, the opening 25 of the resin mask 20. The present situation is that no consideration is given to the visible light transmittance in the region in which the openings are not formed (hereinafter, also referred to as the opening non-forming area). In order to increase the contrast of shade of shade due to the imaged transmitted light, only the opening 25 of the resin mask 20 transmits visible light, and the visible light does not transmit in the area where the opening of the resin mask 20 is not formed, or It is desirable that the transmittance is low. However, in the conventional resin mask in which the transmittance of visible light is not considered at all, visible light is transmitted even in the area where the opening portion of the resin mask is not formed, and the contrast of the shade of the shadow imaged by the camera is reduced. It becomes low, and it becomes difficult to accurately grasp the edge portion of the shadow, in other words, the edge portion in the opening pattern of the opening 25 formed in the resin mask 20. If the edge portion cannot be accurately grasped, is the opening pattern of the opening 25 formed in the resin mask 20 of the vapor deposition mask 100 according to the vapor deposition pattern desired to be formed on the vapor deposition surface of the vapor deposition target object? It becomes difficult to check whether or not.

  The vapor deposition mask 100 according to an embodiment of the present invention is characterized in that the resin mask 20 has a light transmittance of 40% or less at a wavelength of 550 nm. When the light is irradiated, the visible light can be suppressed from passing through the opening non-formation region of the resin mask 20, the contrast of the shade of the shadow captured by the camera can be increased, and the edge portion of the shadow, in other words, This makes it possible to accurately grasp the edge portion of the opening pattern of the opening 25 formed in the resin mask 20. Accordingly, it is possible to determine whether the opening pattern of the opening 25 formed in the resin mask 20 of the vapor deposition mask 100 is the vapor deposition pattern desired to be formed on the vapor deposition surface of the vapor deposition target object. . In particular, according to the vapor deposition mask of one embodiment of the present invention, since the opening 25 is formed in the mask made of a resin material, the opening 25 in the mask can be made highly precise. In general, as the definition of the aperture 25 becomes higher, the contrast of the shade of the imaged shadow tends to decrease, but as described above, in the present invention, the light transmittance at a wavelength of 550 nm is 40% or less. Since the resin mask 20 is defined as above, it is possible to sufficiently enhance the contrast of shades of shade. Therefore, when the opening 25 has a high definition, for example, even when a resin mask having a high definition opening 25 exceeding 400 ppi is used, the opening pattern of the opening 25 is accurately inspected. be able to.

  The light transmittance of the resin mask 20 referred to in the specification of the present application means the transmittance of light passing through a region where the opening 25 is not formed in the resin mask 20, that is, a region where the opening is not formed.

  The light transmittance of visible light can be measured using a spectrophotometer (MPC-3100) manufactured by Shimadzu Corporation.

  In the vapor deposition mask 100 according to the embodiment of the present invention, the light transmittance of the resin mask 20 at the wavelength of 550 nm is defined as 40% or less because the wavelength of 550 nm is the wavelength at the center of the visible light and the wavelength of 550 nm. By setting the light transmittance to 40% or less, it is possible to sufficiently enhance the contrast of the shade of the shadow imaged by irradiating visible light. More specifically, since the spectrum of a transmitted light source that is incident light, for example, the spectrum of a white light source includes a wavelength of 550 nm that is the wavelength at the approximate center of visible light, the light transmittance of a wavelength of 550 nm is 40%. By the following, it is possible to sufficiently enhance the contrast of the shade of the imaged shadow. If the light transmittance at a wavelength of 550 nm exceeds 40%, it is not possible to sufficiently enhance the contrast of the shade of the shade when visible light is irradiated, and it is not possible to accurately grasp the edge portion of the shade. . The light transmittance at a wavelength of 550 nm may satisfy the condition of 40% or less as described above, but is preferably 30% or less, more preferably 10% or less. The lower limit is not particularly limited and is 0%. In particular, when the light transmittance at a wavelength of 550 nm is set to 10% or less, the contrast of shades of shade can be more sufficiently increased, so that the inspection accuracy can be further improved.

  Furthermore, the light transmittance at a wavelength of 550 nm is 40% or less, the maximum value of the light transmittance at a wavelength of 450 nm to 650 nm is 55% or less, and particularly, the light transmittance at a wavelength of 550 nm is 40% or less. It is preferable that the resin mask has a maximum light transmittance of 55% or less at a wavelength of 380 nm to 780 nm. Further, it is more preferable to use a resin mask having a maximum light transmittance of 40% or less at a wavelength of 450 nm to 650 nm, particularly at a wavelength of 380 nm to 780 nm. Moreover, it is more preferable to use a resin mask having a light transmittance of 40% or less at a wavelength of 550 nm and a maximum light transmittance of 55% or less in the visible light wavelength region. It is particularly preferable to use a resin mask having a value of 40% or less. Most preferably, the maximum value of the light transmittance of 450 nm to 650 nm is 10% or less, particularly, the resin mask having the maximum value of the light transmittance of 380 nm to 780 nm is 10% or less, or the light transmittance of the visible light wavelength region. The resin mask has a maximum value of 10% or less. The visible light wavelength region mentioned here means a wavelength range defined by JIS-Z8120 (2001), and has a short wavelength limit of 360 to 400 nm and a long wavelength limit of 760 to 830 nm. Not only the light transmittance of the wavelength of 550 nm, but the wavelength 380 nm to 780 nm, or by setting the light transmittance of the visible light wavelength region to the above-mentioned preferable range, it is possible to suppress the bias of the contrast of the shade of shade in a wide wavelength, It is possible to further increase the contrast of shading.

  The material of the resin mask 20 is not limited, and, for example, a highly precise opening 25 can be formed by laser processing, etc., and a lightweight material having a small dimensional change rate and moisture absorption rate with heat or aging can be used. preferable. Examples of such a material include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene- Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, and ionomer resin. Among the materials exemplified above, a resin material having a coefficient of thermal expansion of 16 ppm / ° C. or less is preferable, a resin material having a moisture absorption rate of 1.0% or less is preferable, and a resin material satisfying both conditions is particularly preferable. By using the resin mask using this resin material, the dimensional accuracy of the opening 25 can be improved, and the dimensional change rate and the moisture absorption rate due to heat and aging can be reduced. Of the above-mentioned resin mask materials, a particularly preferable material is polyimide resin.

  In the resin mask 20 composed of the materials exemplified above, there is no particular limitation on the means for setting the light transmittance of the resin mask 20 at the wavelength of 550 nm to 40% or less. It can be realized by adopting the configurations of means to third means. The resin mask 20 is not limited to the configuration described below, and as a result, the light transmittance of the resin mask 20 at a wavelength of 550 nm may be 40% or less. According to the respective means described below, as shown in FIGS. 8A to 8C, visible light does not pass through the opening non-formation region of the resin mask 20 or its transmission can be suppressed. , It is possible to sufficiently enhance the contrast of shading. On the other hand, as shown in FIG. 8D, in the conventional vapor deposition mask 100X, visible light easily passes through the opening non-formation region of the resin mask 20X, and it is not possible to sufficiently enhance the contrast of shade of shade.

(First means)
As a first means, as shown in FIG. 8A, a resin mask 20 made of the above-exemplified materials is made to contain a coloring material component so that the light transmittance at a wavelength of 550 nm is 40% or less. It is a means. In other words, the resin mask 20 in the first means contains the color material component in addition to the materials exemplified above. There is no particular limitation on the color material component, and the material and the content of which the light transmittance of the resin mask 20 at the wavelength of 550 nm can be 40% or less may be appropriately selected. The color material component may be an organic material or an inorganic material, and conventionally known dyes, pigments, fine particles thereof, or the like can be appropriately selected and used. Further, as long as the light transmittance of the resin mask 20 at the wavelength of 550 nm can be set to 40% or less, other materials can be used. The color material components may be used alone or in combination of two or more. The color material component contained in the resin mask 20 may be selected in consideration of the process temperature when forming the resin mask 20 or the resin plate described later. For example, when a polyimide resin is used as the material of the resin mask, it is preferable to use a coloring material component having high heat resistance. The shape of the coloring material component is also not particularly limited, and conventionally known shapes such as spherical, acicular, and scaly particles may be used, and the size is also not particularly limited. If the size of the color material component exceeds 1 μm, defects such as protrusions are likely to occur in the resin mask 20 containing the color material component. Considering this point, the size of the color material component is preferably 1 μm or less. The lower limit of the size is not particularly limited, but is about 1 nm.

  Examples of the coloring material component include, for example, carbon black, titanium oxide, titanium dioxide, black iron oxide, yellow iron oxide, red iron oxide, manganese oxide, manganese dioxide, chromium oxide, chromium dioxide, silicon oxide, silicon dioxide, ultramarine blue. , Aniline black, activated carbon and the like. Note that the strength of the resin mask tends to decrease as the content of the color material component increases, and a vapor deposition process for producing a vapor deposition pattern on the vapor deposition surface of the vapor deposition target using the vapor deposition mask, or the vapor deposition mask In a cleaning process for cleaning the, the durability of use is likely to be lowered. Therefore, as the color material component, it is preferable to reduce the content of the color material component by using a shape or a material having a high light-shielding property. The colorant component is preferably black, which has small wavelength dependence. Among the coloring material components exemplified above, carbon black, black iron oxide, titanium oxide, and titanium dioxide are particularly preferable coloring material components. The content of the color material component is preferably 20% by mass or less, more preferably 10% by mass or less, and particularly preferably 6% by mass or less, based on the total mass of the resin material of the resin mask. preferable. This is because when the content of the color material component with respect to the total mass of the resin material of the resin mask 20 exceeds 20% by mass, the dispersibility of the color material component in the resin mask 20 becomes uneven and the resin containing the color material component is present. This is because the number of defects in the mask 20 is increased and the strength of the resin mask is reduced.

  In addition, the resin mask 20 in the first means may include an arbitrary component in addition to the material of the resin mask and the color material component. For example, components necessary for forming the resin mask of the first means, such as a dispersant, can be arbitrarily mixed. The same applies to the color material layer 40 in the resin mask 20 of the second means described later.

  The thickness of the resin mask 20 in the first means is not particularly limited, but in order to further improve the effect of suppressing the generation of shadows, the thickness of the resin mask 20 is preferably less than 10 μm. There is no particular limitation on the preferred range of the lower limit value, but when the thickness of the resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur and the risk of deformation and the like increases. In particular, by setting the thickness of the resin mask 20 to 3 μm or more and less than 10 μm, and more preferably 4 μm or more and 8 μm or less, it is possible to more effectively prevent the influence of shadows when forming a high-definition pattern exceeding 400 ppi. . Further, the resin mask 20 and the metal mask 10 described later may be directly bonded or may be bonded via an adhesive layer, but the resin mask 20 and the metal mask may be bonded via the adhesive layer. When 10 and 10 are joined, it is preferable that the total thickness of the resin mask 20 and the pressure-sensitive adhesive layer is within the above-mentioned preferable thickness range. Note that the shadow means that a part of the vapor deposition material emitted from the vapor deposition source does not reach the vapor deposition target by colliding with the slit of the metal mask or the inner wall surface of the opening of the resin mask, and thus the target vapor deposition. This is a phenomenon in which an undeposited portion having a film thickness smaller than the film thickness occurs.

(Second means)
As a second means, as shown in FIG. 8B, the color material layer 40 is formed on the opening non-formation region of the resin mask 20 which is not in contact with the metal mask 10 so that the wavelength of the resin mask 20 is 550 nm. This is a means for adjusting the light transmittance to 40% or less. The color material layer 40 referred to here is included in the resin mask 20. That is, the light transmittance at the wavelength of 550 nm in the laminated body of the resin mask 20 and the color material layer 40 may be 40% or less.

  The material of the color material layer may be a layer containing the color material component by appropriately selecting the color material component described in the first means. The thickness of the color material layer 40 is not particularly limited, but it is preferable that the total thickness of the resin mask 20 and the color material layer 40 be the thickness of the resin mask 20 described in the first means.

(Third means)
The third means is, as shown in FIG. 8C, a means for increasing the thickness of the resin mask to reduce the light transmittance at a wavelength of 550 nm to 40% or less.

  The thickness of the resin mask 20 capable of making the light transmittance at the wavelength of 550 nm 40% or less by the third means can be appropriately set according to the material of the resin mask and the like, but is usually 30 μm or more.

  As described above, the thickness of the resin mask is preferably less than 10 μm for the purpose of suppressing the generation of shadows. Therefore, in the present invention, it is preferable to use the first means or the second means to form the resin mask 20 having a light transmittance of 40% or less at a wavelength of 550 nm. In addition, in the resin mask 20 of the second means, the problem that the coloring material layer 40 is peeled from the resin mask 20, the cleaning step of cleaning the vapor deposition mask 100, and the resin mask 20 of the second means are obtained. There is an inherent problem that a peeling piece is generated at the stage of forming the opening 25 in the. According to the resin mask of the first means in which the resin mask 20 contains the color material component, these problems do not exist, and it is a preferable means as compared with the resin mask 20 of the second means. I can say. Further, in the resin mask of the third means, since the thickness of the resin mask 20 becomes thicker, the time for forming the opening 25 becomes longer, and when the opening 25 is formed by laser processing or the like. It can be said that the resin masks of the first means and the second means are preferable from the viewpoint that there are inherent problems such as increase in energy of the above, and the tendency to easily generate shadows.

  Further, when the opening 25 is formed in the resin mask by using laser processing or the like, the material of the resin mask may be present as a foreign substance in the opening 25 or in the vicinity of the opening 25. In the resin mask 20 in the means, the resin mask 20 itself has a function of suppressing the transmission of visible light, that is, the foreign matter itself due to the material of the resin mask also has a function of suppressing the transmission of visible light. Therefore, according to the resin mask 20 of the first means, not only the edge portion of the opening 25 but also the foreign matter due to the material of the resin mask can be accurately grasped by the shadow. Further, according to the resin mask 20 of the first means that contains the coloring material component, the transmittance can be easily adjusted, and the resin mask 20 having a light transmittance of 40% or less at a wavelength of 550 nm can be easily provided. You can

  Moreover, in the resin mask 20 of the vapor deposition mask 100 of one embodiment, the first means to the third means described above can be combined. In addition, the resin mask 20 having a light transmittance of 40% or less at a wavelength of 550 nm can be obtained by combining various other means.

  As shown in FIGS. 8A to 8C, according to the resin mask 20 having a light transmittance of 40% or less at a wavelength of 550 nm, visible light is not transmitted or an opening non-formation region of the resin mask is formed. The transmitted light that passes through can be suppressed. FIG. 8D is a schematic cross-sectional view of a vapor deposition mask that schematically shows a state of transmitted light that passes through the opening 25 and the area where the opening is not formed when the conventional vapor deposition mask is irradiated with visible light. For comparison, FIGS. 8A to 8C also schematically show the state of transmitted light that passes through the opening 25 and the area where the opening is not formed.

  In order to confirm the superiority of the resin mask in which the light transmittance at a wavelength of 550 nm was 40% or less, Samples 1 to 10 of the resin mask shown in Table 1 below were prepared, and the shade of shade was confirmed. FIG. 12 shows a shadow image. 12A to Sample 1, FIG. 12B to Sample 2, FIG. 12C to Sample 4, FIG. 12D to Sample 5, and FIG. 12E to Sample 6. It corresponds to. Sample 8 had the same contrast as the shadow image shown in FIG. Samples 3, 7, 9, and 10 had slightly lower contrast than the shadow image shown in FIG. The measurement of the light transmittance of wavelengths of 550 nm, 450 to 650 nm and 380 to 780 nm uses a spectrophotometer (MPC-3100) manufactured by Shimadzu Corporation, and an appearance defect inspection apparatus (Takano Image processing device: MP72000) manufactured by K.K. The shape of the opening when viewed in plan was 50 μm square (50 μm × 50 μm). The evaluation results in the table are based on the following criteria. For samples 9 and 10, red iron oxide was used as the coloring material component instead of carbon black, and adjustment was performed so that the transmittance at each wavelength was the transmittance shown in Table 1 below.

(Sample evaluation criteria)
1 ... The opening cannot be recognized due to the shadow.
2 ... The contrast of shade of the opening is low, and the defect inspection of the opening cannot be sufficiently performed.
3 ... The contrast of the shade of the opening is high enough to be able to perform the defect inspection of the opening, but there is a slight possibility that the defect of the opening is missed.
4 ... The contrast of shade of the opening is high, and there is almost no possibility of overlooking defects in the opening.
5 ... The contrast of the shade of the opening is extremely high, and the defect inspection accuracy of the opening is extremely high.

  In the illustrated form, the opening shape of the opening 25 is rectangular, but the opening shape is not particularly limited, and the opening shape of the opening 25 may be a rhombus, a polygon, a circle, or It may be a shape having a curvature such as an ellipse. It should be noted that the rectangular or polygonal opening shape can be said to be a preferable opening shape of the opening portion 25 in that the light emitting area can be made larger than the opening shape having a curvature such as a circle or an ellipse.

  The cross-sectional shape of the opening 25 is not particularly limited, and the end faces of the resin mask forming the opening 25 may be substantially parallel to each other. However, as shown in FIG. It is preferable that the cross-sectional shape is such that the cross-sectional shape expands toward the vapor deposition source. In other words, it is preferable to have a tapered surface that expands toward the metal mask 10 side. The taper angle can be appropriately set in consideration of the thickness of the resin mask 20 and the like, but a lower bottom tip in the opening of the resin mask and a straight line connecting the top bottom tip in the opening of the resin mask, The angle formed by the bottom surface of the resin mask, in other words, the inner wall surface of the resin mask 20 in the thickness direction cross section of the inner wall surface of the opening portion 25 and the surface of the resin mask 20 that is not in contact with the metal mask 10. The angle with the lower surface of the resin mask in the illustrated embodiment is preferably in the range of 5 ° to 85 °, more preferably in the range of 15 ° to 75 °, and more preferably 25 ° to 65 °. More preferably, it is within the range of °. Particularly, within this range, it is preferable that the angle is smaller than the vapor deposition angle of the vapor deposition machine used. Further, in the illustrated embodiment, the end surface forming the opening 25 has a linear shape, but the shape is not limited to this, and it has a curved shape protruding outward, that is, the entire opening 25. The shape may be a bowl shape.

(Metal mask)
As shown in FIG. 1B, the metal mask 10 is laminated on one side of the resin mask 20. The metal mask 10 is made of metal and has slits 15 extending in the vertical direction or the horizontal direction. The slit 15 has the same meaning as the opening. There is no particular limitation on the arrangement example of the slits, the slits extending in the vertical direction and the horizontal direction may be arranged in a plurality of rows in the vertical direction and the horizontal direction, and the slits extending in the vertical direction are arranged in a plurality of rows in the horizontal direction. The slits extending in the horizontal direction may be arranged in a plurality of rows in the vertical direction. Further, only one row may be arranged in the vertical direction or the horizontal direction. The "longitudinal direction" and the "horizontal direction" as used herein refer to the up-down direction and the left-right direction of the drawing, and may be either the longitudinal direction or the width direction. For example, the longitudinal direction of the vapor deposition mask, the resin mask, and the metal mask may be the “vertical direction”, and the width direction may be the “vertical direction”. Further, in the specification of the present application, the case where the shape of the vapor deposition mask when viewed in plan is a rectangle is described as an example, but other shapes such as a circular shape and a rhombus shape may be used. In this case, the longitudinal direction of the diagonal line, the radial direction, or any direction is defined as the “longitudinal direction”, and the direction orthogonal to this “longitudinal direction” is referred to as the “width direction (sometimes referred to as short-side direction)”. do it.

  The material of the metal mask 10 is not particularly limited, and those conventionally known in the field of vapor deposition masks can be appropriately selected and used, and examples thereof include metal materials such as stainless steel, iron-nickel alloy, and aluminum alloy. . Above all, the Invar material, which is an iron-nickel alloy, can be preferably used because it is hardly deformed by heat.

  Further, when performing vapor deposition on the vapor deposition target surface of the vapor deposition target using the vapor deposition mask 100 of one embodiment, a magnet or the like is arranged behind the vapor deposition target so that the vapor deposition mask 100 in front of the vapor deposition target is magnetically coupled. When it is necessary to attract the metal mask, it is preferable to form the metal mask 10 with a magnetic material. The magnetic metal mask 10 is an iron-nickel alloy, pure iron, carbon steel, tungsten (W) steel, chromium (Cr) steel, cobalt (Co) steel, or an iron alloy containing cobalt-tungsten-chromium-carbon. Some KS steels, MK steels containing iron / nickel / aluminum as main components, NKS steels obtained by adding cobalt / titanium to MK steels, Cu-Ni-Co steels, aluminum (Al) -iron (Fe) alloys, etc. You can When the material forming the metal mask 10 itself is not a magnetic material, the metal mask 10 may be given magnetism by dispersing the powder of the magnetic material in the material.

  The thickness of the metal mask 10 is also not particularly limited, but in order to more effectively prevent the generation of shadows, it is preferably 100 μm or less, more preferably 50 μm or less, and 35 μm or less. Particularly preferred. When the thickness is less than 5 μm, the risk of breakage or deformation increases and handling tends to be difficult.

  Further, in the form shown in FIG. 1A, the opening shape when the slit 15 is viewed in plan is a rectangular shape, but the opening shape is not particularly limited, and the opening shape of the slit 15 is trapezoidal, It may have any shape such as a circular shape. The same applies to the shape of the opening 25 of the resin mask 20.

  Although the cross-sectional shape of the slit 15 formed in the metal mask 10 is not particularly limited, it is preferably a shape that widens toward the vapor deposition source as shown in FIG. More specifically, the angle formed by the straight line connecting the lower bottom tip of the slit 15 of the metal mask 10 and the upper bottom tip of the slit 15 of the metal mask 10 and the bottom surface of the metal mask 10, in other words, the metal mask. In the thickness direction cross section of the inner wall surface of the slit 15 of No. 10, the angle between the inner wall surface of the slit 15 and the surface of the metal mask 10 on the side in contact with the resin mask 20 (the lower surface of the metal mask in the illustrated embodiment) is: It is preferably in the range of 5 ° to 85 °, more preferably in the range of 15 ° to 80 °, and even more preferably in the range of 25 ° to 65 °. Particularly, within this range, it is preferable that the angle is smaller than the vapor deposition angle of the vapor deposition machine used.

  The method for laminating the metal mask 10 on the resin mask is not particularly limited, and the resin mask 20 and the metal mask 10 may be attached to each other using various adhesives, or a resin mask having self-adhesiveness may be used. . The resin mask 20 and the metal mask 10 may have the same size or different sizes. If the size of the resin mask 20 is made smaller than that of the metal mask 10 and the outer peripheral portion of the metal mask 10 is exposed in consideration of the optional fixing to the frame after this, the metal mask 10 is exposed. It is preferable because welding between the frame and the frame is easy.

  Hereinafter, preferred embodiments of the vapor deposition mask will be described by taking Embodiment (A) and Embodiment (B) as examples. The vapor deposition mask 100 of the present invention is not limited to the mode described below, and the metal mask 10 having the slit 15 formed therein and the opening 25 corresponding to the pattern to be vapor deposited at a position overlapping the slit 15 are formed. Any form may be used as long as it satisfies the condition that the resin mask 20 formed with is laminated. For example, the slits 15 formed in the metal mask 10 may have a stripe shape (not shown). Further, the slit 15 of the metal mask 10 may be provided at a position that does not overlap the entire screen. Regardless of the form, by using the resin mask 20 having a light transmittance of 40% or less at a wavelength of 550 nm, the opening 25 of the resin mask 20 is desired to be formed on the deposition surface of the deposition target. When inspecting whether or not it is in accordance with the pattern, it is possible to enhance the contrast of the shade of the shadow, and it is possible to accurately grasp the edge portion of the opening pattern of the opening 25.

<Evaporation Mask of Embodiment (A)>
As shown in FIG. 2, the vapor deposition mask 100 of the embodiment (A) is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, and a plurality of slits 15 are formed on one surface of the resin mask 20. The resin mask 20 is provided with openings 25 required to form a plurality of screens, and each slit 15 is provided at a position overlapping at least one entire screen. It is characterized by Also in the vapor deposition mask 100 of the embodiment (A), the light transmittance of the resin mask 20 at a wavelength of 550 nm is 40% or less.

  The vapor deposition mask 100 of the embodiment (A) is a vapor deposition mask used for simultaneously forming vapor deposition patterns for a plurality of screens, and one vapor deposition mask 100 can simultaneously form vapor deposition patterns corresponding to a plurality of products. You can The “opening” referred to in the vapor deposition mask of the embodiment (A) means a pattern to be produced using the vapor deposition mask 100 of the embodiment (A), and for example, the vapor deposition mask is an organic layer in an organic EL display. When it is used for forming, the opening 25 has the shape of the organic layer. Further, “one screen” is composed of an assembly of openings 25 corresponding to one product, and when the one product is an organic EL display, it is necessary to form one organic EL display. The aggregate of the organic layers, that is, the aggregate of the openings 25 serving as the organic layer forms one screen. In addition, in the vapor deposition mask 100 of the embodiment (A), in order to form vapor deposition patterns for a plurality of screens at the same time, the above “one screen” is arranged on the resin mask 20 for a plurality of screens at a predetermined interval. There is. That is, the resin mask 20 is provided with the openings 25 necessary to form a plurality of screens.

  In the vapor deposition mask of the embodiment (A), a metal mask 10 having a plurality of slits 15 is provided on one surface of a resin mask, and each slit is provided at a position overlapping at least one entire screen. It is characterized by the fact that In other words, between the openings 25 necessary to form one screen, between the openings 25 adjacent in the horizontal direction, the length is the same as the vertical length of the slit 15, and the same as the metal mask 10. There is no metal wire portion having a thickness or between the openings 25 adjacent to each other in the vertical direction, the metal wire portion having the same length as the horizontal length of the slit 15 and the same thickness as the metal mask 10. It is characterized by Hereinafter, the length of the slit 15 in the vertical direction is the same as the length of the metal mask 10 having the same thickness as the metal mask 10, and the length of the slit 15 in the horizontal direction is the same as the length of the metal mask 10. A metal wire portion having a thickness may be generically referred to as a metal wire portion.

  According to the vapor deposition mask 100 of the embodiment (A), when the size of the openings 25 required to form one screen and the pitch between the openings 25 forming one screen are narrowed, for example, it exceeds 400 ppi. Even if the size of the openings 25 and the pitch between the openings 25 are extremely small in order to form a screen, it is possible to prevent the interference due to the metal line portions, and it is possible to form a high-definition image. It will be possible. When one screen is divided by a plurality of slits, in other words, when there is a metal wire portion having the same thickness as the metal mask 10 between the openings 25 forming one screen, As the pitch between the openings 25 forming one screen becomes narrower, the metal wire portions existing between the openings 25 become an obstacle when forming a vapor deposition pattern on a vapor deposition target, and a high-definition vapor deposition pattern is formed. Difficult to form. In other words, when there is a metal line portion having the same thickness as the metal mask 10 between the openings 25 forming one screen, the metal line portion has a shadow when the vapor deposition mask with a frame is used. It is difficult to form a high-definition screen.

  Next, an example of the opening 25 that constitutes one screen will be described with reference to FIGS. In the illustrated form, the area closed by the broken line is one screen. In the illustrated form, a group of a small number of openings 25 is shown as one screen for convenience of explanation, but the present invention is not limited to this form. For example, when one opening 25 is taken as one pixel, one screen is shown. There may be an opening 25 of several million pixels.

  In the form shown in FIG. 2, one screen is configured by a group of openings 25 provided with a plurality of openings 25 in the vertical and horizontal directions. In the form shown in FIG. 3, one screen is configured by a group of openings 25 having a plurality of openings 25 provided in the lateral direction. Further, in the form shown in FIG. 4, one screen is configured by an aggregate of the openings 25 provided with a plurality of openings 25 in the vertical direction. In addition, in FIGS. 2 to 4, the slit 15 is provided at a position overlapping the entire one screen.

  As described above, the slit 15 may be provided at a position overlapping with only one screen, and as shown in FIGS. 5A and 5B, the slit 15 is provided at a position overlapping with two or more entire screens. May be. In FIG. 5A, in the resin mask 10 shown in FIG. 2, a slit 15 is provided at a position overlapping the entire two screens continuous in the lateral direction. In FIG. 5B, slits 15 are provided at positions overlapping the entire three screens continuous in the vertical direction.

Next, the pitch between the openings 25 and the pitch between the screens forming one screen will be described by taking the form shown in FIG. 2 as an example. The pitch between the openings 25 forming one screen and the size of the openings 25 are not particularly limited, and can be appropriately set according to the pattern to be formed by vapor deposition. For example, in the case of forming a high-definition vapor deposition pattern of 400 ppi, the horizontal pitch (P1) and the vertical pitch (P2) of the adjacent openings 25 in the openings 25 forming one screen are about 60 μm. Becomes The size of the opening becomes 500μm ² ~1000μm ² about. Further, the one opening 25 is not limited to being associated with one pixel, and for example, depending on the pixel arrangement, a plurality of pixels may be combined into one opening 25.

  The horizontal pitch (P3) between the screens and the vertical pitch (P4) are not particularly limited, but as shown in FIG. 2, when one slit 15 is provided at a position overlapping the entire screen, There will be a metal line portion between each screen. Therefore, the vertical pitch (P4) and the horizontal pitch (P3) between the screens are smaller than the vertical pitch (P2) and the horizontal pitch (P1) of the openings 25 provided in one screen. In the case, or when they are substantially equivalent, the metal wire portion existing between the screens is likely to be broken. Therefore, in consideration of this point, it is preferable that the pitch (P3, P4) between the screens is wider than the pitch (P1, P2) between the openings 25 forming one screen. An example of the pitch (P3, P4) between screens is about 1 mm to 100 mm. The pitch between screens means the pitch between adjacent openings in one screen and another screen adjacent to the one screen. This also applies to the pitch of the openings 25 and the pitch between screens in the vapor deposition mask of Embodiment (B) described later.

  As shown in FIG. 5, when one slit 15 is provided at a position where it overlaps with two or more screens as a whole, the slits are not provided between the plurality of screens provided in one slit 15. This means that there is no metal wire portion forming the inner wall surface. Therefore, in this case, the pitch between the two or more screens provided at the position overlapping the one slit 15 may be substantially equal to the pitch between the openings 25 forming one screen.

<Evaporation Mask of Embodiment (B)>
Next, the vapor deposition mask of the embodiment (B) will be described. As shown in FIG. 6, the vapor deposition mask of the embodiment (B) has one slit (one through hole) on one surface of the resin mask 20 provided with a plurality of openings 25 corresponding to the pattern to be vapor deposited and manufactured. 16) is provided, the metal mask 10 is laminated, and all of the plurality of openings 25 are provided at positions overlapping with one through hole provided in the metal mask 10.

  The opening 25 referred to in the embodiment (B) means an opening necessary for forming the vapor deposition pattern on the vapor deposition target, and an opening not necessary for forming the vapor deposition pattern on the vapor deposition target is It may be provided at a position where it does not overlap with one through hole 16. Note that FIG. 6 is a front view of the vapor deposition mask showing an example of the vapor deposition mask of the embodiment (B) as seen from the metal mask side.

  In the vapor deposition mask 100 of the embodiment (B), the metal mask 10 having one through hole 16 is provided on the resin mask 20 having the plurality of openings 25, and all of the plurality of openings 25 are provided. , Is provided at a position overlapping with the one through hole 16. In the vapor deposition mask 100 of the embodiment (B) having this configuration, there is no metal line portion having the same thickness as the thickness of the metal mask or the metal line portion thicker than the thickness of the metal mask between the openings 25. As described in the vapor deposition mask of the form (A), it is possible to form a high-definition vapor deposition pattern according to the size of the opening 25 provided in the resin mask 20 without being interfered by the metal line portion. .

  Further, according to the vapor deposition mask of the embodiment (B), even if the thickness of the metal mask 10 is increased, the influence of the shadow is scarcely exerted. The thickness can be increased until the durability and the handleability can be sufficiently satisfied, and the durability and the handleability can be improved while forming a high-definition vapor deposition pattern.

  The resin mask 20 in the vapor deposition mask of the embodiment (B) is made of a resin, and as shown in FIG. 6, a plurality of openings 25 corresponding to the pattern to be vapor-deposited and produced are provided at positions overlapping with one through hole 16. There is. The opening 25 corresponds to a pattern to be produced by vapor deposition. When the vapor deposition material emitted from the vapor deposition source passes through the opening 25, a vapor deposition pattern corresponding to the opening 25 is formed on the vapor deposition target. It In addition, in the illustrated embodiment, the example in which the openings are arranged in a plurality of rows in the vertical and horizontal directions is described, but the openings may be arranged only in the vertical direction or the horizontal direction. Also in the vapor deposition mask 100 of the embodiment (B), the light transmittance of the resin mask 20 at a wavelength of 550 nm is 40% or less.

  “One screen” in the vapor deposition mask 100 of the embodiment (B) means a group of openings 25 corresponding to one product, and when the one product is an organic EL display, one organic screen is displayed. An aggregate of organic layers required to form an EL display, that is, an aggregate of the openings 25 that are organic layers forms one screen. The vapor deposition mask of the embodiment (B) may be composed of only “one screen”, or may be one in which a plurality of “one screen” are arranged. When the screens are arranged, it is preferable that the openings 25 are provided at predetermined intervals for each screen unit (see FIG. 5 of the vapor deposition mask of the embodiment (A)). The form of “one screen” is not particularly limited, and for example, when one opening 25 is one pixel, one screen can be configured by millions of openings 25.

(Metal mask)
The metal mask 10 in the vapor deposition mask 100 of the embodiment (B) is made of metal and has one through hole 16. Then, in the present invention, the one through hole 16 has a position where it overlaps with all the openings 25 when viewed from the front of the metal mask 10, in other words, all the openings 25 arranged in the resin mask 20. It is located in a visible position.

  The metal portion forming the metal mask 10, that is, the portion other than the through hole 16 may be provided along the outer edge of the vapor deposition mask 100 as shown in FIG. 6, and the size of the metal mask 10 as shown in FIG. The height may be smaller than that of the resin mask 20, and the outer peripheral portion of the resin mask 20 may be exposed. Further, the size of the metal mask 10 may be made larger than that of the resin mask 20, and a part of the metal portion may be projected outward in the horizontal direction or outward in the vertical direction of the resin mask. In any case, the size of the through hole 16 is smaller than the size of the resin mask 20.

  The width (W1) in the horizontal direction and the width (W2) in the vertical direction of the metal portion forming the wall surface of the through hole of the metal mask 10 shown in FIG. 6 are not particularly limited, but the widths of W1 and W2 become narrower. The durability and the handling property tend to decrease as the time goes by. Therefore, it is preferable that W1 and W2 have a width that can sufficiently satisfy durability and handleability. Although an appropriate width can be appropriately set according to the thickness of the metal mask 10, an example of a preferable width is about 1 mm to 100 mm for both W1 and W2 as in the metal mask of the embodiment (A).

  Further, in the vapor deposition masks of the respective embodiments described above, the openings 25 are regularly formed in the resin mask 20, but when viewed from the metal mask 10 side of the vapor deposition mask 100, the openings 25 are formed. 25 may be staggered laterally or vertically (not shown). That is, the openings 25 that are adjacent to each other in the horizontal direction may be displaced in the vertical direction. With such an arrangement, even if the resin mask 20 thermally expands, the expansion that occurs at various places can be absorbed by the openings 25, and it is possible to prevent the expansion from accumulating and causing a large deformation. You can

  Further, in the vapor deposition masks of the respective embodiments described above, the resin mask 20 may be provided with grooves (not shown) extending in the vertical direction or the horizontal direction of the resin mask 20. When heat is applied during vapor deposition, the resin mask 20 thermally expands, which may change the size and position of the opening 25. However, forming the groove can absorb the expansion of the resin mask. Therefore, it is possible to prevent the resin mask 20 as a whole from expanding in a predetermined direction due to the accumulation of thermal expansions occurring at various places of the resin mask and changing the size and position of the opening 25. The position where the groove is formed is not limited, and the groove may be provided between the openings 25 forming one screen or at a position overlapping with the opening 25, but is preferably provided between the screens. Further, the groove may be provided only on one surface of the resin mask, for example, the surface that is in contact with the metal mask, or may be provided only on the surface that is not in contact with the metal mask. Alternatively, it may be provided on both sides of the resin mask 20.

  Further, a groove extending in the vertical direction may be formed between adjacent screens, or a groove extending in the horizontal direction may be formed between adjacent screens. Further, it is also possible to form the groove in a combination of these.

  The depth and width of the groove are not particularly limited. However, if the depth of the groove is too deep or the width is too wide, the rigidity of the resin mask 20 tends to decrease, so this point is taken into consideration. It is necessary to set it. Also, the cross-sectional shape of the groove is not particularly limited, and may be arbitrarily selected such as a U-shape or a V-shape in consideration of the processing method. The same applies to the vapor deposition mask of the embodiment (B).

<< Method of manufacturing vapor deposition mask >>
Hereinafter, the method for manufacturing the vapor deposition mask of one embodiment will be described with reference to an example. As the vapor deposition mask 100 of one embodiment, a metal mask with a resin plate in which the metal mask 10 having the slits 15 provided on one surface of the resin plate is stacked is prepared. It can be obtained by irradiating a laser from the mask 10 side through the slit 15 to form the opening 25 corresponding to the pattern to be produced by vapor deposition on the resin plate.

  As a method of forming the metal mask with the resin plate, the metal mask 10 having the slits 15 provided on one surface of the resin plate is laminated. For the resin plate, the materials described for the resin mask 20 can be used. When the resin mask of the first means is used, the resin plate contains a coloring material component, and the resin plate has a light transmittance of 40% or less at a wavelength of 550 nm.

  As a method of forming the metal mask 10 provided with the slits 15, a masking member, for example, a resist material is applied to the surface of the metal plate, and a predetermined portion is exposed and developed, so that the slits 15 are finally formed. A resist pattern is formed leaving the formation position. The resist material used as the masking member is preferably one having good processability and desired resolution. Then, using this resist pattern as an etching resistant mask, etching is performed by an etching method. After the etching is completed, the resist pattern is washed and removed. Thereby, the metal mask 10 provided with the slits 15 is obtained. The etching for forming the slit 15 may be performed from one side or both sides of the metal plate. Further, when the slit 15 is formed in the metal plate by using the laminated body in which the resin plate is provided on the metal plate, a masking member is applied to the surface of the metal plate that is not in contact with the resin plate to form one side. The slit 15 is formed by etching from the side. When the resin plate has etching resistance to the etching material of the metal plate, it is not necessary to mask the surface of the resin plate, but when the resin plate does not have resistance to the etching material of the metal plate. It is necessary to coat the surface of the resin plate with a masking member. In the above description, the resist material is mainly used as the masking member. However, instead of applying the resist material, a dry film resist may be laminated and the same patterning may be performed.

  In the above method, the resin plate forming the metal mask with a resin plate may be not only a plate-shaped resin but also a resin layer or a resin film formed by coating. That is, the resin plate may be prepared in advance, and when the metal mask with the resin plate is formed using the metal plate and the resin plate, the metal plate is coated on the metal plate by a conventionally known coating method or the like. It is also possible to form a resin layer or a resin film which finally becomes a resin mask. For example, when the resin mask of the first means is used, a resin obtained by dispersing or dissolving the material of the resin mask described above, the coloring material component, and any component added as necessary in a suitable solvent. A plate coating solution is prepared, and this is applied onto a metal plate using a conventionally known coating means and dried to obtain a resin plate for obtaining the resin mask 20 of the first means. be able to.

  As a method of forming the opening 25, a pattern is formed in which the resin plate is pierced and vapor-deposited on the resin plate by using a laser processing method, precision press processing, photolithography processing, or the like with respect to the metal mask with the resin plate prepared above. By forming the openings 25 corresponding to the above, the metal mask 10 having the slits 15 provided on one surface of the resin mask 20 provided with the openings 25 corresponding to the pattern to be vapor-deposited is laminated. The vapor deposition mask 100 in the form is obtained. It is preferable to use a laser processing method for forming the opening 25 from the viewpoint that the highly precise opening 25 can be easily formed.

  When the resin mask of the second means is used, the color material layer 40 is formed on the resin plate before forming the opening 25, and the opening 25 penetrating the color material layer 40 and the resin plate. Alternatively, the opening 25 penetrating the resin plate may be formed, the resin mask 20 may be obtained, and then the color material layer 40 may be formed on the opening-unformed region of the resin mask 20.

  Further, the metal mask with the resin plate may be fixed to the frame before the opening 25 is formed in the resin plate. Positioning accuracy can be remarkably improved by not providing the completed vapor deposition mask on the frame but providing an opening later on the metal mask with the resin plate fixed to the frame. When the completed vapor deposition mask 100 is fixed to the frame, the metal mask of which the opening has been determined is fixed while being pulled with respect to the frame, so that the coordinate accuracy of the opening position is lowered. The method of fixing the frame 60 and the vapor deposition mask with the resin plate is not particularly limited, and the frame 60 can be fixed by spot welding for fixing with a laser beam or the like, adhesive, screwing, or another method.

<< Evaporation mask with frame >>
Next, a vapor deposition mask with a frame according to an embodiment of the present invention will be described. As shown in FIGS. 9 and 10, a vapor deposition mask 200 with a frame according to an embodiment of the present invention includes a vapor deposition mask 100 fixed on a frame 60, and the vapor deposition mask 100 is a metal mask having slits 15 formed therein. 10 and a resin mask 20 in which an opening 25 corresponding to a pattern to be formed by vapor deposition is formed at a position overlapping the slit, and the resin mask 20 has a light transmittance of 40% or less at a wavelength of 550 nm. It has a feature. According to the vapor deposition mask 200 with a frame having this feature, it is possible to confirm whether or not the shape pattern of the openings formed in the resin mask 20 is normal while satisfying both high definition and light weight. Even after the mask 100 is fixed to the frame 60, it can be accurately performed.

  The vapor deposition mask 200 with a frame according to an embodiment of the present invention may have one vapor deposition mask 100 fixed to a frame 60 as shown in FIG. 9, or as shown in FIG. In addition, a plurality of vapor deposition masks 100 may be fixed.

(Evaporation mask)
The vapor deposition mask 100 that constitutes the vapor deposition mask 200 with a frame may be the vapor deposition mask 100 of the embodiment of the present invention described above as it is, and a detailed description thereof will be omitted. It should be noted that the vapor deposition mask of the embodiment described here includes the vapor deposition masks of the preferred forms described above (the vapor deposition masks of the embodiment (A) and the embodiment (B)).

(flame)
The frame 60 is a substantially rectangular frame member, and has a through hole for exposing the opening 25 provided in the resin mask 20 of the vapor deposition mask 100 that is finally fixed to the vapor deposition source side. The material for the frame is not particularly limited, but a metal material having high rigidity, such as SUS, Invar material, or ceramic material, can be used. Among them, the metal frame is preferable in that the vapor deposition mask can be easily welded to the metal mask and the influence of deformation or the like is small.

  The thickness of the frame is also not particularly limited, but it is preferably about 10 mm to 30 mm from the viewpoint of rigidity and the like. The width between the inner peripheral end surface of the opening of the frame and the outer peripheral end surface of the frame is not particularly limited as long as the frame and the metal mask of the vapor deposition mask can be fixed, and is, for example, about 10 mm to 50 mm. The width can be exemplified.

  Further, as shown in FIGS. 11A to 11C, the reinforcing frame 65 and the like are provided in the region of the through hole within a range that does not prevent the exposure of the opening 25 of the resin mask 20 that constitutes the vapor deposition mask 100. The frame 60 may be used. In other words, the opening of the frame 60 may be divided by a reinforcing frame or the like. By providing the reinforcing frame 65, the frame 60 and the vapor deposition mask 100 can be fixed by using the reinforcing frame 65. Specifically, when a plurality of vapor deposition masks 100 described above are arranged and fixed in the vertical direction and the horizontal direction, the vapor deposition mask 100 can be fixed to the frame 60 even at a position where the reinforcing frame and the vapor deposition mask overlap. it can.

  The method of fixing the frame 60 and the vapor deposition mask 100 is not particularly limited, and the frame 60 and the vapor deposition mask 100 can be fixed by spot welding using an adhesive such as laser light, adhesive, screwing, or any other method.

<< Evaporation mask preparation >>
Next, the vapor deposition mask preparation body of one embodiment of the present invention will be described. A vapor deposition mask preparatory body (not shown) according to an embodiment of the present invention includes a metal mask 10 having a slit 15 and a resin mask 20 having an opening 25 corresponding to a pattern to be vapor deposited at a position overlapping the slit. And a metal mask having slits provided on one surface of a resin plate, and the light transmittance of the resin plate at a wavelength of 550 nm. Is 40% or less.

  The vapor deposition mask preparation of one embodiment of the present invention is common to the vapor deposition mask 100 of one embodiment described above, except that the opening 25 is not provided in the resin plate, and a detailed description thereof will be omitted. . As a specific configuration of the vapor deposition mask preparatory body of one embodiment, the metal mask with a resin plate described in the above vapor deposition mask manufacturing method can be mentioned.

  According to the vapor deposition mask preparatory body of the above-mentioned one embodiment, by forming the opening portion in the resin plate of the vapor deposition mask preparatory body, satisfying both high definition and weight reduction, the opening portion formed in the resin mask It is possible to obtain a vapor deposition mask capable of accurately confirming whether or not the shape pattern is normal.

  In the above, as an example of the vapor deposition mask preparation body, a metal mask with a resin plate in which a metal mask having a slit provided on one surface of a resin plate having a light transmittance of 550 nm at a wavelength of 40% or less is laminated is taken as an example. As described above, a metal plate with a resin plate, in which a metal plate for forming a metal mask is laminated on one surface of a resin plate having a light transmittance of 550 nm at a wavelength of 40% or less, is used as a vapor deposition mask preparation body. You can also In this vapor deposition mask preparation body, a slit is formed in a metal plate of a metal plate with a resin plate, and then an opening portion that overlaps with the slit formed in the metal plate is formed in the resin plate. It is possible to obtain a vapor deposition mask in the form.

(Method of manufacturing organic semiconductor element)
Next, a method for manufacturing an organic semiconductor device according to an embodiment of the present invention will be described. A method for manufacturing an organic semiconductor device according to an embodiment includes a step of forming a vapor deposition pattern on a vapor deposition target using a vapor deposition mask with a frame in which a vapor deposition mask is fixed, and in the step of forming the vapor deposition pattern, The vapor deposition mask to be fixed is formed by laminating a metal mask having a slit and a resin mask having an opening corresponding to a pattern to be vapor deposited at a position overlapping with the slit, and further, the wavelength of the resin mask is 550 nm. The light transmittance is 40% or less.

  An organic semiconductor device manufacturing method according to an embodiment having a step of forming a vapor deposition pattern using a vapor deposition mask with a frame includes an electrode forming step of forming electrodes on a substrate, an organic layer forming step, and a counter electrode forming step. , A sealing layer forming step and the like, and a vapor deposition pattern is formed on the substrate by an vapor deposition method using a vapor deposition mask with a frame in each arbitrary step. For example, when the vapor deposition method using the vapor deposition mask with a frame is applied to the R, G, and B light emitting layer forming steps of the organic EL device, the vapor deposition pattern of each color light emitting layer is formed on the substrate. The method for manufacturing an organic semiconductor element according to an embodiment of the present invention is not limited to these steps, and can be applied to any step in manufacturing a conventionally known organic semiconductor element using a vapor deposition method.

  In the method for manufacturing an organic semiconductor device according to an embodiment of the present invention, the frame-equipped vapor deposition mask in which the vapor deposition mask is fixed to a frame used in the step of forming the vapor deposition pattern is the one embodiment of the present invention described above. This is a vapor deposition mask 200 with a frame, and detailed description thereof will be omitted here. According to the method for manufacturing an organic semiconductor element using the vapor deposition mask with a frame, it is possible to form an organic semiconductor element having a highly precise pattern. Examples of the organic semiconductor element manufactured by the method for manufacturing an organic semiconductor element according to one embodiment of the present invention include an organic layer of an organic EL element, a light emitting layer, and a cathode electrode. In particular, the method for manufacturing an organic semiconductor device according to one embodiment of the present invention can be suitably used for manufacturing the R, G, B light emitting layers of an organic EL device that requires high-definition pattern accuracy.

(Inspection method of vapor deposition mask)
Next, a method for inspecting a vapor deposition mask according to one embodiment will be described. A method for inspecting a vapor deposition mask according to one embodiment, irradiating visible light to a vapor deposition mask in which a metal mask provided with a slit and a resin mask provided with an opening at a position overlapping the slit are laminated, This is a method of performing visual inspection of the openings provided in the resin mask by contrast between a region of the resin mask that transmits visible light and a region that does not or does not transmit visible light. It is characterized in that the vapor deposition mask is the vapor deposition mask of the embodiment described above.

  According to the vapor deposition mask inspection method of one embodiment, since the vapor deposition mask used in the inspection method is a vapor deposition mask that includes a resin mask having a light transmittance of 40% at a wavelength of 550 nm, the shade of the imaged shadow is shaded. It is possible to increase the contrast and improve the inspection accuracy of the opening provided in the resin mask. As the vapor deposition mask, the vapor deposition mask described in the vapor deposition mask of the above-described embodiment can be used as it is, and detailed description thereof will be omitted.

  The irradiation direction of visible light is not particularly limited, and the visible light may be irradiated from the metal mask side of the vapor deposition mask or the resin mask side of the vapor deposition mask. The visible light irradiation device is also not limited, and a conventionally known device capable of emitting visible light can be appropriately selected and used. The visible light used in the method for inspecting the vapor deposition mask of one embodiment is not particularly limited, and examples thereof include light rays including a component having a wavelength of 550 nm such as white light.

  As described above, as the best mode in the present invention, a vapor deposition mask provided with a resin mask 20 having a light transmittance of 40% or less at a wavelength of 550 nm, a vapor deposition mask preparation for obtaining the vapor deposition mask, and an organic material using the vapor deposition mask. Although the method for manufacturing a semiconductor device and the method for inspecting a vapor deposition mask have been described, as described in the first means, the resin mask 20 containing a coloring material component or the second means has been described. In the case where the resin mask 20 including the color material layer 40 provided on the opening non-formation region is used, as compared with a resin mask containing no color material component or a resin mask containing no color material layer, It is possible to reduce the light transmittance at a predetermined wavelength. Reducing the light transmittance leads to improvement of the inspection accuracy of the opening, and compared with the conventional resin mask, the inspection accuracy of the opening can be improved by the reduction of the light transmittance.

  Therefore, the vapor deposition mask of another embodiment is not limited to the light transmittance of the resin mask at a wavelength of 550 nm, and the resin mask contains a coloring material component or a coloring material layer is provided on the resin mask. It is characterized by being. Preferably, it contains a coloring material component capable of reducing the light transmittance at a wavelength of 550 nm and a coloring material layer. Further, as the vapor deposition mask with a frame, the method for manufacturing an organic semiconductor element, and the vapor deposition mask inspection method described above, a vapor deposition mask including a resin mask having this feature can be used. Further, a vapor deposition mask preparatory body including a resin mask having this characteristic can also be used.

100 ... Vapor deposition mask 10 ... Metal mask 15 ... Slit 16 ... Through hole 20 ... Resin mask 25 ... Opening 40 ... Color material layer 60 ... Frame 200 ... Vapor deposition mask with frame

Claims (8)

Including a resin mask in which openings corresponding to the pattern to be produced by vapor deposition are formed,
A vapor deposition mask, wherein the resin portion of the resin mask has a light transmittance of 40% or less at a wavelength of 550 nm. Including a resin mask in which openings corresponding to the pattern to be produced by vapor deposition are formed,
The vapor deposition mask in which the maximum value of the light transmittance of the resin portion of the resin mask at a wavelength of 450 nm to 650 nm is 40% or less.   The vapor deposition mask according to claim 1, wherein the resin mask contains a color material component.   The vapor deposition mask according to claim 1, wherein the resin mask has a thickness of 3 μm or more and less than 10 μm.   A vapor deposition mask with a frame, wherein the vapor deposition mask according to any one of claims 1 to 4 is fixed to a frame. A vapor deposition mask preparation used for the production of a vapor deposition mask including a resin mask in which an opening corresponding to a pattern to be vapor deposited is formed,
A resin plate for obtaining the resin mask,
A vapor deposition mask preparation, wherein the resin plate has a light transmittance of 40% or less at a wavelength of 550 nm. A vapor deposition mask preparation used for the production of a vapor deposition mask including a resin mask in which an opening corresponding to a pattern to be vapor deposited is formed,
A resin plate for obtaining the resin mask,
The vapor deposition mask preparatory body in which the maximum value of the light transmittance of the resin plate at a wavelength of 450 nm to 650 nm is 40% or less. A method of manufacturing an organic semiconductor device, comprising:
A method for manufacturing an organic semiconductor device, comprising the step of forming a vapor deposition pattern on a vapor deposition object using the vapor deposition mask with a frame according to claim 5.