CN110306156A - The manufacturing method of deposition mask and its precursor and organic semiconductor device - Google Patents

The manufacturing method of deposition mask and its precursor and organic semiconductor device Download PDF

Info

Publication number
CN110306156A
CN110306156A CN201910716655.1A CN201910716655A CN110306156A CN 110306156 A CN110306156 A CN 110306156A CN 201910716655 A CN201910716655 A CN 201910716655A CN 110306156 A CN110306156 A CN 110306156A
Authority
CN
China
Prior art keywords
mask
resin
deposition
opening portion
deposition mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910716655.1A
Other languages
Chinese (zh)
Inventor
武田利彦
川崎博司
小幡胜也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Publication of CN110306156A publication Critical patent/CN110306156A/en
Pending legal-status Critical Current

Links

Abstract

Present invention offer can be while meeting both High precision and lightweight, can also correctly to the shape pattern for being formed in resin mask open portion whether be normally carried out the deposition mask of confirmation, the deposition mask precursor for obtaining the deposition mask and have the deposition mask tape frame deposition mask, also provide used the tape frame deposition mask organic semiconductor device manufacturing method.Deposition mask (100) be will be formed the metal mask (10) for having the gap (15) and and made of the position that is overlapped of the gap is formed with resin mask (20) lamination of the corresponding opening portion (25) of pattern made with vapor deposition, and the use of the light transmittance of wavelength 550nm is 40% resin mask below, thus solves the above subject.

Description

The manufacturing method of deposition mask and its precursor and organic semiconductor device
The application be the applying date be on May 29th, 2015, application No. is 201580022365.7 Chinese invention application " steam The divisional application of the manufacturing method of plating mask and its precursor and organic semiconductor device ".
Technical field
The present invention relates to the systems of deposition mask, the deposition mask of tape frame, deposition mask precursor and organic semiconductor device Make method.
Background technique
With the enlargement for the product for using organic EL element or the enlargement of substrate size, to deposition mask enlargement It is required that being also continuously increased.Moreover, the metal plate for manufacturing deposition mask made of metal is also enlarged.However, current Metalworking technology in, it is difficult to accurately form opening portion on large-scale metal plate, the high-precision of opening portion can not be coped with Refinement.In addition, since with enlargement, quality also increases, including frame when as only deposition mask made of metal Gross mass inside also increases, therefore obstruction can be brought to operation.
In such a case, lamination is disclosed in patent document 1 apertured metal mask is arranged and configures in length and breadth Multiple row is located at deposition mask made of the resin mask of metal mask surface and opening portion corresponding with the pattern of vapor deposition production. According to deposition mask disclosed in Patent Document 1, even if also can satisfy High precision and lightweight in the case where enlargement The two, furthermore, it is possible to carry out the formation of the vapor deposition pattern of fine.
Existing technical literature
Patent document
Patent document 1: No. 5288072 bulletin of patent
Summary of the invention
Problems to be solved by the invention
Major subjects of the invention are that providing can be while meeting both High precision and lightweight, moreover it is possible to right It is formed in the deposition mask whether the shape pattern in resin mask open portion is normally correctly checked;And it provides for obtaining The deposition mask precursor of the deposition mask;And provide the deposition mask for having the tape frame of the deposition mask;It further provides for The manufacturing method of the organic semiconductor device of the deposition mask of the tape frame is used.
Solution for solving the problem
The present invention for solve the problem provides a kind of deposition mask, be will be formed apertured metal mask and And made of the position that is overlapped of the gap is formed with the resin mask stack of the corresponding opening portion of pattern made with vapor deposition, It is characterized in that, the resin mask is 40% or less to the light transmittance of wavelength 550nm.
In the invention, the preferably described resin mask contains coloured material ingredient.Additionally, it is preferred that the resin mask With a thickness of 3 μm more than or lower than 10 μm.
In addition, the present invention for solve the problem provides a kind of deposition mask of tape frame, it is by deposition mask Made of being fixed on frame, which is characterized in that the deposition mask be will be formed apertured metal mask and with the seam The position that gap is overlapped is formed with made of the resin mask stack of opening portion corresponding with the pattern of vapor deposition production, and the resin is covered Mould is 40% or less to the light transmittance of wavelength 550nm.
In addition, the present invention for solve the problem provides a kind of deposition mask precursor, being used to obtain will be formed with The metal mask in gap and and the position that is overlapped of the gap be formed with the resin of the corresponding opening portion of pattern made with vapor deposition Deposition mask made of mask stack, which is characterized in that be provided with the metal mask in gap, institute in a face superimposed layer of resin plate Stating resin plate is 40% or less to the light transmittance of wavelength 550nm.
In addition, the present invention for solve the problem provides a kind of manufacturing method of organic semiconductor device, feature It is, comprising using the deposition mask for being fixed with the tape frame of deposition mask on frame to form vapor deposition figure on vapor deposition object The process of case, in the process for forming the vapor deposition pattern, the deposition mask lamination for being fixed on the frame is formed with The metal mask in gap and and the position that is overlapped of the gap be formed with the resin of the corresponding opening portion of pattern made with vapor deposition Mask, and the resin mask is 40% or less to the light transmittance of wavelength 550nm.
The effect of invention
The deposition mask of deposition mask according to the present invention, tape frame, can meet High precision and lightweight both sides While, moreover it is possible to whether the shape pattern for being formed in resin mask open portion is normally correctly checked.In addition, according to this The deposition mask precursor of invention can easily manufacture the deposition mask of features described above.It organic is partly led in addition, according to the present invention The manufacturing method of volume elements part can accurately manufacture organic semiconductor device.
Detailed description of the invention
Fig. 1 (a) is the front elevation of the deposition mask of an embodiment from metal mask side, is (b) that the A-A of (a) is cutd open Face figure;
Fig. 2 is the front elevation of the deposition mask of embodiment (A) from metal mask side;
Fig. 3 is the front elevation of the deposition mask of embodiment (A) from metal mask side;
Fig. 4 is the front elevation of the deposition mask of embodiment (A) from metal mask side;
Fig. 5 is the front elevation of the deposition mask of embodiment (A) from metal mask side;
Fig. 6 is the front elevation of the deposition mask of embodiment (B) from metal mask side;
Fig. 7 is the front elevation of the deposition mask of embodiment (B) from metal mask side;
Fig. 8 (a)~(d) is to schematically show the outline of the deposition mask of state of the transmitted light through resin mask to cut open Face figure, (a)~(c) are the deposition masks of an embodiment, are (d) deposition masks compared;
Fig. 9 is the front elevation for indicating an example of deposition mask of tape frame;
Figure 10 is the front elevation for indicating an example of deposition mask of tape frame;
Figure 11 is the front elevation of an example of representational framework;
Figure 12 (a)~(e) is the echo of the sample 1,2,4~6 of resin mask respectively.
Description of symbols
100 ... deposition masks
10 ... metal masks
15 ... gaps
16 ... through holes
20 ... resin masks
25 ... opening portions
40 ... bepainting material layers
60 ... frames
The deposition mask of 200 ... tape frames
Specific embodiment
< < deposition mask > >
Hereinafter, the deposition mask 100 to one embodiment of the present invention is concretely demonstrated.As shown in Figure 1, one implements The deposition mask 100 of mode formed using lamination have the gap 15 metal mask 10 and formed in the position being overlapped with the gap 15 There is the structure of the resin mask 20 of opening portion 25 corresponding with the pattern of vapor deposition production.In addition, Fig. 1 (a) is from metal mask 10 The front elevation of the deposition mask of an embodiment is observed in side, is (b) the A-A summary section of (a).
(resin mask)
As shown in Figure 1, being provided with multiple opening portions 25 on resin mask 20.Moreover, one embodiment of the present invention Deposition mask 100 is characterized in that the light transmittance of the wavelength 550nm of resin mask 20 is 40% or less.
Using the deposition mask 100 of an embodiment in production vapor deposition pattern in the vapor deposited surface that object is deposited, Keep the face of 20 side of resin mask of the vapor deposited surface that object is deposited and deposition mask 100 opposed, makes that being steamed for object is deposited It is carried out in the state of the resin mask 20 of surfacing and deposition mask contiguity.Moreover, passing through the evaporation material for making to be released by evaporation source Opening portion 25 by being formed in resin mask 20 is attached to the vapor deposited surface of vapor deposition object, in being deposited for vapor deposition object Vapor deposition pattern corresponding with the opening portion 25 of resin mask 20 is formed in is made on face.In addition, for having used an embodiment The evaporation coating method of deposition mask do not make any restriction yet, for example, can enumerate sputtering method, vacuum vapour deposition, ion plating, The physical vaporous depositions such as electric beam vapour deposition method (Physical Vapor Deposition), hot CVD, plasma CVD, optical cvd Chemical vapour deposition techniques such as method (chemical vapor deposition) etc..
That is, being formed in vapor deposition object in the method for production vapor deposition pattern in the vapor deposited surface of above-mentioned vapor deposition object The vapor deposition pattern of vapor deposited surface determined by the patterns of openings for being formed in the opening portion 25 of resin mask 20.Therefore, it is such as being deposited Wish that the vapor deposition pattern to be formed is such in the vapor deposited surface of object, forms opening on the resin mask 20 of deposition mask 100 The patterns of openings in portion 25 is most important, in deposition mask before use, needing inspection to be formed in after the manufacture of i.e. progress deposition mask Whether the patterns of openings of the opening portion 25 of the resin mask 20 of the deposition mask 100 such as wishes in the vapor deposited surface of vapor deposition object The vapor deposition pattern formed is hoped to be formed like that.
Whether the patterns of openings that the opening portion 25 of the resin mask 20 of deposition mask 100 is formed in as differentiation is to be deposited One of the inspection method of the vapor deposition pattern of desired formation in the vapor deposited surface of object, has following methods: covering using to resin Mould 20 irradiates visible light, and by penetrating the region of the visible light in resin mask 20, the region for being not through or being difficult to penetrate is formed Shade carries out the inspection for being formed in the patterns of openings of resin mask 20.Specifically, being following methods: not from resin mask 20 The surface side to connect with metal mask 10 to resin mask 20 irradiate visible light, using camera from metal mask 10 not with resin The surface side that mask 20 connects shoots the transmitted light, or covers from the surface side of metal mask 10 not connected with resin mask 20 to resin Mould 20 irradiates visible light, shoots the transmitted light from the surface side of resin mask 20 not connected with metal mask 10 using camera, The shade obtained using captured transmitted light carries out the inspection for being formed in the patterns of openings of resin mask 20.
It is from that can not penetrate in the mask for being formed with opening portion in the case where carrying out the inspection of above-mentioned patterns of openings In the case where mask made of the metal material of light, it is formed in pair of the light and shade of the shade of the patterns of openings of the opening portion of the mask It is higher than degree, it can with there is no problem carry out the inspection of patterns of openings.It on the other hand, is by penetrating in the mask for being formed with opening portion In the case where the mask that the resin material of visible light is made, it is formed in the light and shade of the shade of the patterns of openings of the opening portion of the mask Contrast reduce, lead to the problem of the inspection that cannot sufficiently carry out patterns of openings.That is, having the gap 15 using lamination formation Metal mask 10 and and the position that is overlapped of the gap 15 be formed with the resin of the corresponding opening portion 25 of pattern made with vapor deposition The structure of mask 20, in the deposition mask that can satisfy High precision and lightweight both sides, intrinsic problem is cannot be correct Ground carries out the inspection for being formed in the patterns of openings in resin mask open portion.However, status is to can satisfy High precision and light weight The above-mentioned deposition mask of change both sides does not account for transmission of visible light when irradiating visible light to resin mask 20, specifically, The visible of the region (hereinafter, the sometimes referred to as non-formation region in opening portion) of the not formed opening portion 25 of resin mask 20 is not accounted for The transmissivity of light.In order to improve shade that captured transmitted light is formed light and shade contrast, preferred only resin mask 20 Opening portion 25 penetrates visible light, is not through visible light in the non-formation region in the opening portion of resin mask 20 or its transmissivity is low.So And in the existing resin mask that the transmissivity for visible light does not have any consideration, the opening portion of resin mask is non-formation Region also penetrates visible light, is reduced by the contrast of the light and shade of the shade of camera shooting, it is difficult to the correct edge for holding shade Portion, in other words, it is difficult to correct to hold the edge part for being formed in the patterns of openings of opening portion 25 of resin mask 20.Cannot be correct In the case where holding edge part, it is difficult to check the patterns of openings of the opening portion 25 for being formed in resin mask 20 of deposition mask 100 Whether be vapor deposition object vapor deposited surface desired by formation vapor deposition pattern.
The deposition mask 100 of one embodiment of the present invention is characterized in that, the light of the wavelength 550nm of resin mask 20 Transmissivity is 40% hereinafter, according to the deposition mask 100, when irradiating visible light to resin mask 20, this can be inhibited visible Light penetrates the non-formation region in opening portion of resin mask 20, improves the light and shade contrast of the shade shot by camera, can be correct The edge part for holding shade, in other words can correctly hold the edge for being formed in the patterns of openings of opening portion 25 of resin mask 20 Portion.Thus, it is possible to which whether the patterns of openings for differentiating the opening portion 25 for being formed in resin mask 20 of deposition mask 100 is to be deposited The desired vapor deposition pattern formed of the vapor deposited surface of object.In particular according to the deposition mask of one embodiment of the present invention, Due to being formed with opening portion 25 on mask made of resin material, it is possible to which the opening portion 25 of the mask is formed as high Fine opening portion.In general, the contrast of the light and shade of captured shade has becoming for reduction with the High precision of opening portion 25 Gesture, it is such as above-mentioned, be formed as the light transmittance of wavelength 550nm being defined as 40% resin mask 20 below in the present invention, because This, can sufficiently improve the contrast of the light and shade of shade.Therefore, in the case where making 25 High precision of opening portion, for example, even if The case where being formed into the resin mask for being formed with the opening portion of the fine more than 400ppi 25, also can correctly carry out the opening The inspection of the patterns of openings in portion 25.
The light transmittance of described resin mask 20 refers to through shape non-in resin mask 20 in the specification of the present application At the transmissivity of the light in the non-formation region in the region for having opening portion 25 i.e. opening portion.
The survey such as spectrophotometer (MPC-3100) of (strain) Shimadzu Seisakusho Ltd. can be used in the light transmittance of visible light It is fixed.
In the deposition mask 100 of one embodiment of the present invention, the light of the wavelength 550nm of resin mask 20 is transmitted It is because wavelength 550nm is the wavelength of the approximate centre of visible light, by the light for making wavelength 550nm that rate, which is defined as 40% or less, Transmissivity is 40% hereinafter, the contrast of the light and shade by shade captured by irradiation visible light can be improved sufficiently.More specifically For, the wavelength of the approximate centre containing visible light is in the spectrum of incident light, that is, transmitted light source spectrum such as white light source The wavelength of 550nm, therefore, by making the light transmittance 40% of wavelength 550nm hereinafter, captured yin can be improved sufficiently The contrast of the light and shade of shadow.In addition, can't improve enough photograph in the case where the light transmittance of wavelength 550nm is more than 40% The contrast of the light and shade of shade when penetrating visible light, cannot correctly hold the edge part of shade.The light transmittance of wavelength 550nm As long as meeting as described above is 40% condition below, preferably 30% hereinafter, more preferably 10% or less.For under Limit value is not particularly limited, and is 0%.Especially the light transmittance of wavelength 550nm is that can more fill in 10% situation below Divide the contrast for improving the light and shade of shade, therefore can be further improved inspection precision.
In turn, the light transmittance of wavelength 550nm is preferably formed into as 40% hereinafter, the light of wavelength 450nm~650nm The maximum value of transmissivity is that 55% resin mask below, the especially light transmittance of wavelength 550nm are 40% hereinafter, wavelength The maximum value of the light transmittance of 380nm~780nm is 55% resin mask below.In addition, being more preferably formed as wavelength 450nm~650nm, the especially maximum value of the light transmittance of wavelength 380nm~780nm are 40% resin mask below. In addition, the further preferred light transmittance as wavelength 550nm is for 40% hereinafter, the light transmittance of visible wavelength region Maximum value be 55% resin mask below, be particular preferably formed into the maximum value of the light transmittance of visible wavelength region For 40% resin mask below.Most preferably the maximum value of the light transmittance of 450nm~650nm is 10% hereinafter, especially The maximum value for being the light transmittance of wavelength 380nm~780nm is 10% resin mask or visible wavelength region below Light transmittance maximum value be 10% resin mask below.Visible wavelength region said here refers to by JIS- Z8120 (2001) given wave-length coverage, 360~400nm of short wavelength's boundary, 760~830nm of long wavelength's boundary.Not only make wave The light transmittance of long 550nm, and it is upper for making the light transmittance of wavelength 380nm~780nm or visible wavelength region also Preferred range is stated, so as to the contrast deviation of the light and shade of inhibition shade in wide wavelength, can further improve shade Light and shade contrast.
The material of resin mask 20 is not limited, it is preferable to use the opening of fine can be formed by laser processing etc. Portion 25, Yin Re or through when caused size changing rate and hydroscopicity it is small, and the material of light weight.As this material, can enumerate Polyimide resin, polyamide-imide resin, polyester resin, polyvinyl resin, polyvinyl alcohol resin, gathers polyamide Allyl resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene-vinyl acetate copolymer resin, ethylene- Vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, Corvic, polyvinylidene chloride resin, glass Paper, ionomer resin etc..It is also preferred that thermal expansion coefficient is 16ppm/ DEG C of resin material below among foregoing illustrative material, It is preferred that hydroscopicity is 1.0% resin material below, particularly preferably has the resin material of the condition of the both sides.Made by being made With the resin mask of the resin material, the dimensional accuracy of opening portion 25 can be improved, and can reduce Yin Re or through Shi Yinqi Size changing rate and hydroscopicity.Among the material of foregoing illustrative resin mask, particularly preferred material is polyimides Resin.
For making in the resin mask 20 made of foregoing illustrative material etc. the wavelength 550nm of the resin mask 20 Light transmittance is that 40% the following method is not particularly limited, for example, by making resin mask 20 be formed as the 1st side below Method~the 3rd method composition can be achieved.In addition, resin mask 20 is not limited to composition described below, the result is that resin mask 20 Wavelength 550nm light transmittance be 40% or less.Each method according to the following instructions, as shown in Fig. 8 (a)~(c), Visible light is not transmitted through the non-formation region in opening portion of resin mask 20 or is able to suppress the transmission, can sufficiently improve shade The contrast of light and shade.On the other hand, as shown in Fig. 8 (d), visible light easily penetrates resin mask in existing deposition mask 100X The non-formation region in the opening portion of 20X, can't improve enough the contrast of the light and shade of shade.
(the 1st method)
It is in the resin mask 20 for making to be made of foregoing illustrative material etc. containing coloring shown in 1st method such as Fig. 8 (a) Material composition makes 40% the following method of light transmittance of wavelength 550nm.In other words, the resin mask 20 of the 1st method with Foregoing illustrative material etc. contains coloured material ingredient together.Coloured material ingredient is not particularly limited, as long as appropriate choosing Select the material below of light transmittance 40% and content that can make the wavelength 550nm of resin mask 20.Coloured material Ingredient can be organic material, be also possible to inorganic material, can suitably select using currently known dyestuff, pigment, they Particle etc..In addition, as long as can make the light transmittance 40% of wavelength 550nm of resin mask 20 hereinafter, as long as can also be with Use the material other than these.Coloured material ingredient can be used alone, can also and with two or more.In addition, conduct The coloured material ingredient that resin mask 20 contains, as long as considering to select work when forming resin mask 20 or aftermentioned resin plate Skill temperature etc..For example, it is preferable to use heat resistance in the case where the materials'use polyimide resin as resin mask High coloured material ingredient.The shape of coloured material ingredient is also not particularly limited, currently known shape, example are used Such as spherical, needle-shaped, flakey particle, in addition, size is also not particularly limited.In addition, such as coloured material ingredient Size be more than 1 μm, then as the resin mask 20 containing coloured material ingredient when, the defects of being also easy to produce protrusion.Consider the point When, preferably the size of coloured material ingredient is 1 μm or less.The lower limit value of size is not particularly limited, is 1nm or so.
As an example of coloured material ingredient, such as carbon black, titanium oxide, titanium dioxide, black iron oxide, yellow can be enumerated Iron oxide, red iron oxide, manganese oxide, manganese dioxide, chromium oxide, chromium dioxide, silica, silica, ultramarine, aniline Black, activated carbon etc..In addition, the intensity of resin mask has the tendency that reduction as the content of coloured material ingredient increases, using Deposition mask is in the vapor deposition process of the vapor deposited surface production vapor deposition pattern of vapor deposition object and the clean process of clean deposition mask In, useful life longevity is easily reduced.Therefore, as coloured material ingredient, it is preferable to use shape and material that light-proofness improves, subtract The content of few coloured material ingredient.The small black material ingredient of coloured material ingredient optimal wavelength dependence.Foregoing illustrative Among coloured material ingredient, carbon black, the black iron of oxidation, titanium oxide, titanium dioxide are particularly preferred coloured material ingredients.Colour material The content of material ingredient is preferably 20 mass % hereinafter, more preferably 10 matter relative to the gross mass of the resin material of resin mask % is measured hereinafter, particularly preferably 6 mass % or less.This is because tree of the content of coloured material ingredient relative to resin mask 20 When total quality of rouge material is more than 20 mass %, the dispersibility of the coloured material ingredient in resin mask 20 is uneven, is containing There is defects count in the resin mask 20 of coloring material composition to increase, causes the strength reduction of resin mask.
It, can be in addition, the resin mask 20 of the 1st method is in addition to the material of above-mentioned resin mask, coloured material ingredient Contain arbitrary ingredient.For example, dispersing agent etc., can arbitrarily cooperatively form ingredient required for the resin mask of the 1st method.It is right It is also the same in the bepainting material layer 40 of the resin mask 20 of aftermentioned 2nd method.
The thickness of the resin mask 20 of 1st method is not particularly limited, inhibits shade to produce to further increase In the case where raw effect, the thickness of resin mask 20 is preferably shorter than 10 μm.Range preferred for lower limit value does not limit especially Fixed, in the case where the thickness of resin mask 20 is lower than 3 μm, the defects of being also easy to produce pin hole, there are also the risks such as deformation to increase.Especially Be resin mask 20 with a thickness of 3 μm more than or lower than 10 μm, preferably 4 μm or more 8 μm hereinafter, it is possible thereby to more effectively prevent The influence of shade when only forming over the fine pattern of 400ppi.In addition, resin mask 20 and aftermentioned metal mask 10 It can directly engage, can also be engaged via adhesive layer, be engaged in resin mask 20 and metal mask 10 via adhesive layer In the case where, the aggregate thickness of preferred resin mask 20 and adhesive layer is in above-mentioned preferred thickness range.In addition, shade is Refer to the inner wall due to a part of evaporation material and the gap of metal mask or the opening portion of resin mask for releasing from evaporation source Face collides and can not reach vapor deposition object, to generate showing for the non-evaporated segment of the film thickness of the evaporation film thickness than target As.
(the 2nd method)
It is by non-in the opening portion for the resin mask 20 not connected with metal mask 10 shown in 2nd method such as Fig. 8 (b) Bepainting material layer 40 is formed in forming region, thus makes 40% or less the light transmittance of the wavelength 550nm of resin mask 20 Method.In addition, bepainting material layer 40 said here is the layer contained in resin mask 20.As long as that is, resin mask 20 and The light transmittance of the wavelength 550nm of the laminated body of color material layer 40 is 40% or less.
The material of bepainting material layer suitably selects the coloured material ingredient illustrated in above-mentioned 1st method, contains as long as being formed The layer of the coloured material ingredient.The thickness of bepainting material layer 40 is not particularly limited, preferred resin mask 20 and Total thickness with a thickness of the resin mask 20 illustrated in above-mentioned 1st method of color material layer 40.
(the 3rd method)
Shown in 3rd method such as Fig. 8 (c), it is the thickness by thickening resin mask, makes the light transmittance of wavelength 550nm For 40% the following method.
By the 3rd method, it can make the thickness of the resin mask 20 below of light transmittance 40% of wavelength 550nm can To be suitably set according to the material etc. of resin mask, but usually 30 μm or more.
As described above, for the purpose of inhibiting shade to generate, the thickness of resin mask is preferably shorter than 10 μm. Therefore, in the present invention, it is preferred to be formed as the light transmittance of wavelength 550nm using above-mentioned 1st method or above-mentioned 2nd method For 40% resin mask 20 below.In addition, intrinsic problem is bepainting material layer 40 in the resin mask 20 of the 2nd method The problem of being removed from resin mask 20, in the clean process or the resin mask of the 2nd method in order to obtain for cleaning deposition mask 100 20 and stage for forming opening portion 25 lead to the problem of stripping film.According to make resin mask 20 containing coloured material ingredient the 1st The resin mask of method, these problems are not present, compared with the resin mask 20 of the 2nd method, it may be said that are preferred methods.Separately Outside, in the resin mask of the 3rd method, intrinsic problem is to form opening portion 25 and thickening the thickness of resin mask 20 When the problem of increasing time or energy when forming opening portion 25 by laser machining etc. increase, be also easy to produce shade etc. and ask Topic, in this regard it may be said that it is preferred that the resin mask of the 1st method, the 2nd method.
In addition, the material of resin mask is in opening portion using laser processing etc. when forming opening portion 25 on resin mask It also tends in 25 or near opening portion 25 exist as impurity, the resin mask 20 of the 1st method its resin mask 20 itself tool There is the function for the transmission for inhibiting visible light, that is, impurity caused by the material of resin mask itself, which also has, inhibits the saturating of visible light The function of penetrating.Therefore, according to the resin mask 20 of the 1st method, the not only edge part of opening portion 25, but also for resin mask Impurity caused by material can also correctly be held by shade.In addition, according to the tree of the 1st method containing coloured material ingredient Rouge mask 20, is easily adjusted transmissivity, and the light transmittance that can be simply forming wavelength 550nm is that 40% resin below is covered Mould 20.
In addition, the above explained 1st can also be combined in the resin mask 20 of the deposition mask 100 of an embodiment Method~the 3rd method.In addition, the various methods of combination in addition to this, the light transmittance that can also form wavelength 550nm are 40% resin mask 20 below.
It is 40% resin mask 20 below according to the light transmittance of wavelength 550nm as shown in Fig. 8 (a)~(c), it can To be not through visible light or inhibit the transmitted light in the non-formation region in opening portion through resin mask.Fig. 8 (d) is to schematically show Through the vapor deposition for transmiting light state in the non-formation region in opening portion 25 and opening portion when irradiating visible light to existing deposition mask The summary section of mask.As a comparison, also being schematically shown in Fig. 8 (a)~(c) non-through opening portion 25 and opening portion The state of the transmitted light of forming region.
In order to confirm that the light transmittance of wavelength 550nm is the superiority of 40% resin mask below, prepare the following table 1 institute The sample 1~10 of the resin mask shown, carries out the confirmation of the light and shade of shade.Figure 12 shows direct-shadow image.In addition, Figure 12 (a) and sample Product 1 are corresponding, and Figure 12 (b) is corresponding with sample 2, and Figure 12 (c) is corresponding with sample 4, and Figure 12 (d) is corresponding with sample 5, Figure 12 (e) and sample Product 6 are corresponding.Sample 8 is the contrast same with direct-shadow image shown in Figure 12 (c).Contrast ratio Figure 12 of sample 3,7,9,10 (c) direct-shadow image shown in is only low a little.The measurement of the light transmittance of wavelength 550nm, 450~650nm and 380~780nm makes With the spectrophotometer (MPC-3100) of (strain) Shimadzu Seisakusho Ltd., open defect check device is used as shade filming apparatus (Takano (strain) system, image processing apparatus: MP72000), observes the transmitted light under white light source.In addition, head-up observation opening Shape when portion is 50 μm of square (50 50 μm of μ m).Evaluation result in table carries out based on the following benchmarks.In addition, for sample Product 9,10 use red iron oxide as coloured material ingredient on the basis of carbon black, become following table with the transmissivity of each wavelength The mode of transmissivity shown in 1 is adjusted.
(evaluation criteria of sample)
1 ... cannot pass through Shadow recognition opening portion.
The contrast of the light and shade of the shade of 2 ... opening portions is low, cannot sufficiently carry out the defect inspection of opening portion.
The contrast of the light and shade of the shade of 3 ... opening portions can be to be able to carry out the degree of the defect inspection of opening portion, leakage A possibility that seeing the defect of opening portion is minimum.
A possibility that contrast of the light and shade of the shade of 4 ... opening portions is high, sees the defect of opening portion almost without leakage.
The contrast of the light and shade of the shade of 5 ... opening portions is high, and the defect inspection precision of opening portion is high.
[table 1]
In the mode of diagram, the opening shape of opening portion 25 is in rectangle, and opening shape is not particularly limited, and is open The opening shape in portion 25 can be diamond shape, polygon, be also possible to the shape with curvature such as round or oval.In addition, with circle or There is ellipses etc. the opening shape of curvature to compare, and the opening shape of rectangle or polygon is capable of increasing light-emitting area, it may be said that is The opening shape of preferred opening portion 25.
The cross sectional shape of opening portion 25 is also not particularly limited, the opposite end of the resin mask of opening portion 25 is formed Face each other can also be with general parallel orientation, as shown in Fig. 1 (b), and preferably the cross sectional shape of opening portion 25 is towards the widened shape of evaporation source Shape.In other words, preferably have towards 10 side of metal mask and the widened conical surface.For cone angle, it may be considered that resin mask 20 Thickness etc. is suitably set, and connects the upper bottom front end of the bottom front end of the opening portion of resin mask and the opening portion of same resin mask Straight line and resin mask bottom surface formed angle, in other words, constitute resin mask 20 opening portion 25 inner wall thickness Direction section is spent, the face of the side that do not connect with metal mask 10 of the inner wall and resin mask 20 of opening portion 25 is (in the side of diagram In formula, below resin mask) angle that is formed is preferably in the range of 5 °~85 °, in the range of more preferably 15 °~75 °, In the range of further preferably 25 °~65 °.In particular, in the range, also preferably than the vapor deposition angle of the evaporator used Spend small angle.In addition, the linear shape in end face of opening portion 25 is formed, however, not limited to this, can also in the mode of diagram To become the curved shape of convex, i.e. the whole shape of opening portion 25 is bowl-shape.
(metal mask)
As shown in Fig. 1 (b), in a face lamination metal mask 10 of resin mask 20.Metal mask 10 is made of metal, and is matched It is equipped in the gap 15 of vertical or horizontal upper extension.Gap 15 is synonymous with opening.The configuration example in gap is not particularly limited, Along longitudinal direction and the gap that is laterally extended can along longitudinal direction and landscape configuration multiple row, the gap extended longitudinally can also be in transverse directions Multiple row is configured, the gap extended transversely can also configure multiple row along longitudinal direction.Alternatively, it is also possible to only configure 1 longitudinally or transversely Column.In addition, " longitudinal direction " said here, " transverse direction " refer to the up and down direction of attached drawing, left and right directions, be also possible to length direction, Either width direction to.For example, it is also possible to which the length direction of deposition mask, resin mask, metal mask is set as " vertical To ", width direction can also be set as " longitudinal direction ".In addition, in the specification of the present application, shape when deposition mask is observed to look squarely Shape is to enumerate explanation in case where rectangle, but or shape, such as circle, diamond shape etc. in addition to this.In this case, Cornerwise length direction or radial or arbitrary direction are set as " length direction ", side that will be vertical with " length direction " To being set as " width direction " (also having referred to as width direction).
The material of metal mask 10 is not particularly limited, in the field of deposition mask, can suitably be selected using mesh Preceding well known material, for example, the metal materials such as stainless steel, iron-nickel alloy, aluminium alloy.Wherein, as iron-nickel alloy Invar alloy material is because thermogenetic deformation is few, so can be suitble to use.
In addition, using the deposition mask 100 of an embodiment, when the vapor deposited surface that object is deposited is deposited, The rear distributed magnet etc. of object is deposited, is needing to attract by magnetic force the deposition mask 100 that the front of object is deposited In the case of, metal mask 10 is preferably formed by magnetic substance.As the metal mask 10 of magnetic substance, can enumerate iron-nickel alloy, Pure iron, carbon steel, tungsten (W) steel, chromium (Cr) steel, cobalt (Co) steel, including cobalt-tungsten-chromium-carbon iron alloy, that is, KS steel, with iron-nickel- Aluminium is the MK steel of principal component, adds cobalt-titanium NKS steel, Cu-Ni-Co steel, aluminium (Al)-iron (Fe) alloy etc. in MK steel.Separately Outside, in the case where the material for forming metal mask 10 is not magnetic substance, disperse above-mentioned magnetic substance in the material by making Powder, metal mask 10 can also be assigned with magnetism.
The thickness of metal mask 10 is also not particularly limited, in order to more efficiently prevent from the generation of shade, preferably 100 μm hereinafter, more preferably 50 μm hereinafter, particularly preferably 35 μm or less.In addition, in the case where thinner than 5 μm, have fracture or The risk of deformation increases, and unworkable trend.
In addition, opening shape when looking squarely direct vision port 15 is in rectangle, but for opening in the mode shown in Fig. 1 (a) Shape is not particularly limited, and the opening shape in gap 15 is also possible to any shapes such as trapezoidal shape, circle.For resin mask The shape of 20 opening portion 25 is also the same.
Cross sectional shape for being formed in the gap 15 of metal mask 10 is also not particularly limited, but preferably such as Fig. 1 (b) institute Show, is towards the widened shape of evaporation source.More specifically, the bottom front end in the gap 15 of connection metal mask 10, same gold Belong to the straight line of the upper bottom front end in the gap 15 of mask 10 and the bottom surface angulation of metal mask 10, in other words, constitutes gold Belong to the inner wall in gap 15 and covering with resin for metal mask 10 in the thickness direction section of the inner wall in the gap 15 of mask 10 The connect angle that is formed of face (in the mode of diagram, below metal mask) of side of mould 20 is preferably in the range of 5 °~85 °, more In the range of preferably 15 °~80 °, in the range of further preferably 25 °~65 °.In particular, being also preferably to compare within the scope of this The small angle of the deposition angles of the evaporator used.
For being not particularly limited in the method for resin mask superimposed layer metal mask 10, it can use various bonding agents Resin mask 20 and metal mask 10 are bonded, the resin mask with tack also can be used.Resin mask 20 and metal The size of mask 10 can be identical, or different sizes.Additionally, it is contemplated that the fixation to frame optionally carried out later, Keep the size of resin mask 20 smaller than metal mask 10, when being preferably formed into the state of outer peripheral portion exposing of metal mask 10, The welding of metal mask 10 and frame is easy.
Hereinafter, illustrating by taking embodiment (A) and embodiment (B) as an example progress for the mode of preferred deposition mask Explanation.In addition, deposition mask 100 of the invention is not limited to mode described below, had the gap as long as meeting lamination formation 15 metal mask 10 and and the position that is overlapped of the gap 15 be formed with the corresponding opening portion 25 of pattern made with vapor deposition The condition of resin mask 20 then can be any way.For example, the gap 15 for being formed in metal mask 10 is also possible to striated (not shown).Alternatively, it is also possible in the gap 15 for the position setting metal mask 10 not being overlapped with 1 picture entirety.Either where Kind mode, the light transmittance by being formed as wavelength 550nm are 40% resin mask 20 below, are checking resin mask 20 Opening portion 25 whether be be deposited object vapor deposited surface desired by formation vapor deposition pattern when, shade can be improved The contrast of light and shade can correctly hold the edge part of the patterns of openings of opening portion 25.
The deposition mask > of < embodiment (A)
As shown in Fig. 2, the deposition mask 100 of embodiment (A) is the vapor deposition pattern for being formed simultaneously multiple picture amounts Deposition mask, which is characterized in that a face superimposed layer of resin mask 20 is provided with the metal mask 10 in multiple gaps 15 and At being provided with opening portion 25 required for for constituting multiple pictures on resin mask 20, each gap 15 is arranged at and 1 The position that picture entirety is overlapped.In the deposition mask 100 of embodiment (A), the light of the wavelength 550nm of resin mask 20 is saturating Penetrating rate is also 40% or less.
The deposition mask 100 of embodiment (A) is the deposition mask for being formed simultaneously the vapor deposition pattern of multiple picture amounts, It can use a deposition mask 100 and be formed simultaneously vapor deposition pattern corresponding with multiple products.It is covered in the vapor deposition of embodiment (A) Described " opening portion " refers to the pattern of the production of deposition mask 100 of embodiment use (A) in mould, for example, by the steaming In the case where plating formation of the mask for the organic layer of organic el display, the shape of opening portion 25 is the shape of the organic layer. In addition " 1 picture " is made of the aggregate of opening portion 25 corresponding with a product, is that organic EL is shown in the product In the case where device, in order to form the aggregate of organic layer required for an organic EL is shown, the i.e. opening portion 25 of organic layer Aggregate becomes " 1 picture ".Moreover, the deposition mask 100 about embodiment (A), in order to be formed simultaneously multiple picture amounts Pattern is deposited, defined interval is separated on resin mask 20 by above-mentioned " 1 picture " and configures multiple picture amounts.That is, being covered in resin Mould 20 is equipped with for opening portion 25 needed for constituting multiple pictures.
The deposition mask of embodiment (A) has the feature that and is provided in the one side of resin mask provided with multiple The metal mask 10 in gap 15, each gap are respectively arranged at the position being overlapped at least one 1 picture entirety.In other words, special Sign is, between the opening portion 25 needed for constituting 1 picture, there is no have and gap 15 between the opening portion 25 being laterally abutted Longitudinal length equal length and metal line portions with 10 same thickness of metal mask, between longitudinally adjacent opening portion 25 not In the presence of with the lateral length equal length with gap 15 and the metal line portions with 10 same thickness of metal mask.Hereinafter, right With the longitudinal length equal length with gap 15 and with the metal line portions of 10 same thickness of metal mask and have and gap 15 lateral length equal length and metal line portions with 10 same thickness of metal mask, sometimes total referred to as metal wire Part.
According to the deposition mask 100 of embodiment (A), the size of the opening portion 25 needed for it will constitute 1 picture constitutes 1 In the case that spacing between the opening portion 25 of picture is narrow, though for example in order to be performed for more than 400ppi picture formation, And by the spacing between the size of opening portion 25, opening portion 25 formed it is atomic it is small in the case where, can also prevent metal line portions Caused by interfere, the image of fine can be formed.In addition, in the case where 1 picture is divided by multiple gaps, in other words, in structure In the case where between the opening portion 25 of 1 picture in the presence of having the metal line portions with 10 same thickness of metal mask, with composition 1 Spacing between the opening portion 25 of picture narrows, and the metal line portions being present between opening portion 25, which become to be formed to vapor deposition object, to be steamed Plate obstruction when pattern, it is difficult to form the vapor deposition pattern of fine.In other words, there is tool between the opening portion 25 for constituting 1 picture In the case where having with the metal line portions of 10 same thickness of metal mask, be formed as the metal wire portion when deposition mask of tape frame The generation of shade is separated, it is difficult to form the picture of fine.
Then, referring to Fig. 2~Fig. 6, an example for the opening portion 25 for constituting 1 picture is illustrated.In addition, in the side of diagram In formula by the closed region of dotted line be 1 picture.In the mode of diagram, for ease of description, with the collection of a small number of opening portions 25 Zoarium is 1 picture, but is not limited to which, such as when by an opening portion 25 as 1 pixel, can also be deposited on 1 picture In the opening portion of millions of pixels 25.
In mode shown in Fig. 2, as along longitudinal direction, be horizontally arranged with the set of opening portion 25 made of multiple opening portions 25 Body constitutes 1 picture.Set in mode shown in Fig. 3, as being horizontally arranged with opening portion 25 made of multiple opening portions 25 Body constitutes 1 picture.In addition, in mode shown in Fig. 4, as being vertically arranged with opening portion 25 made of multiple opening portions 25 Aggregate constitutes 1 picture.Moreover, having the gap 15 in the position setting being overlapped with 1 picture entirety in Fig. 2~Fig. 4.
As described above, gap 15 also can be set in the position being only overlapped with 1 picture, can also be such as Fig. 5 (a), (b) institute Show, the position being overlapped with more than two picture entireties is set.In Fig. 5 (a), in resin mask 10 shown in Fig. 2, with The position setting that transversely continuous two picture entireties are overlapped has the gap 15.In Fig. 5 (b), with continuous three along longitudinal direction The position setting that picture entirety is overlapped has the gap 15.
Then, in the manner shown in figure 2, between constitute 1 picture opening portion 25 spacing, the spacing picture into Row explanation.The size of spacing and opening portion 25 the opening portion 25 for constituting 1 picture is not particularly limited, it can be according to vapor deposition The pattern of production is suitably set.For example, constituting 1 in the case where carrying out the formation of vapor deposition pattern of the fine of 400ppi The opening portion 25 of picture, the horizontal spacing (P1) of adjacent opening portion 25, longitudinal pitch (P2) are 60 μm or so.In addition, opening The size in portion is 500 μm2~1000 μm2Left and right.In addition, an opening portion 25 be not limited to it is corresponding with 1 pixel, such as can also be with Summarize multiple pixels according to pixel arrangement and is formed as an opening portion 25.
Horizontal spacing (P3) between picture, longitudinal pitch (P4) are also not particularly limited, as shown in Fig. 2, at one In the case that gap 15 is set to the position being overlapped with 1 picture entirety, there are metal line portions between each picture.Therefore, each Longitudinal pitch (P4), horizontal spacing (P3) between picture compare the longitudinal pitch (P2) for the opening portion 25 being set in 1 picture, transverse direction The small situation of spacing (P1), or in the case where being substantially the same, the metal line portions being present between each picture are easy broken string.Therefore, When considering this, the spacing (P1, P2) between opening portion 25 of the spacing (P3, P4) than constituting 1 picture preferably between picture is wide.As An example of spacing (P3, P4) between picture is 1mm~100mm or so.In addition, the spacing between picture refer to 1 picture and with this Spacing on the adjacent other pictures of 1 picture between adjacent opening portion.This deposition mask for aftermentioned embodiment (B) Spacing between the spacing of opening portion 25, picture is also the same.
In addition, as shown in figure 5, the case where a gap 15 is set to the position being overlapped with more than two picture entireties Under, there is no the metal line portions for the inner wall for constituting gap between the multiple pictures being set in a gap 15.Therefore, should In the case of, the spacing that is set between the more than two pictures for the position being overlapped with a gap 15 can also with constitute 1 picture Opening portion 25 between spacing be substantially the same.
The deposition mask > of < embodiment (B)
Then, the deposition mask of embodiment (B) is illustrated.As shown in fig. 6, the deposition mask of embodiment (B) It has the feature that and is folded in the one side of resin mask 20 for being provided with multiple opening portions 25 corresponding with the pattern of vapor deposition production The metal mask 10 that layer is provided with gap (1 through hole 16) forms, and multiple opening portion 25 is provided entirely in and is arranged In the position that a through hole of metal mask 10 is overlapped.
Opening portion 25 described in embodiment (B) refers to for opening needed for the formation vapor deposition pattern on vapor deposition object Portion can also form vapor deposition pattern institute in vapor deposition object in the position setting not being overlapped with a through hole 16 and unwanted open Oral area.In addition, Fig. 6 be from metal mask side indicate embodiment (B) deposition mask an example deposition mask just Face figure.
The deposition mask 100 of embodiment (B) is provided on the resin mask 20 with multiple opening portions 25 with one The metal mask 10 of a through hole 16, and multiple opening portions 25 are provided entirely in the position being overlapped with a through hole 16.Tool Have in the deposition mask 100 of embodiment (B) of this composition, thickness identical with the thickness of metal mask is not present between opening portion 25 Degree or the metal line portions thicker than the thickness of metal mask, it is therefore, described such as in the deposition mask of above embodiment (A) It is bright, it can not be interfered caused by by metal line portions, form fine according to the size for the opening portion 25 for being set to resin mask 20 Vapor deposition pattern.
In addition, according to the deposition mask of embodiment (B), even if the case where thickening the thickness of metal mask 10, also almost It is not influenced by shade, therefore the thickness of metal mask 10 can be thickened and can sufficiently meet durability and operability, it can To improve durability and operability while forming the vapor deposition pattern of fine.
The resin mask 20 of the deposition mask of embodiment (B) is formed from a resin, as shown in fig. 6, with a through hole 16 positions being overlapped are provided with multiple opening portions 25 corresponding with the pattern of vapor deposition production.The pattern of opening portion 25 and vapor deposition production Evaporation material opening 25 that is corresponding, releasing from evaporation source, it is right with opening portion 25 to be formed on vapor deposition object as a result, The vapor deposition pattern answered.In addition, in the mode of diagram, the example for enumerating opening portion row arrangement multiple row in length and breadth is illustrated, but It can only configure longitudinally or transversely.In the deposition mask 100 of embodiment (B), the light of the wavelength 550nm of resin mask 20 Transmissivity is also 40% or less.
" 1 picture " of the deposition mask 100 of embodiment (B) refers to the set of opening portion 25 corresponding with a product Body, in the case which is organic el display, for the collection of organic layer needed for forming an organic el display Zoarium, the aggregate for becoming the opening portion 25 of organic layer is " 1 picture ".The deposition mask of embodiment (B) can for only by " 1 picture " constitute, can also should " 1 picture " with multiple picture amounts configure, " 1 picture " with multiple picture amounts configure the case where Under, the defined opening portion 25 that is arranged at intervals with preferably is separated (referring to the figure of the deposition mask of embodiment (A) with every picture unit 5).The mode of " 1 picture " is not particularly limited, such as when by an opening portion 25 as 1 pixel, it can also be by millions of A opening portion 25 constitutes 1 picture.
(metal mask)
The metal mask 10 of the deposition mask 100 of embodiment (B) is made of metal, and has a through hole 16.Moreover, In the present invention, the position being overlapped when which configures from the front from metal mask 10 with whole opening portions 25 It sets, in other words, the position for being configured at whole opening portions 25 of resin mask 20 is can be seen in configuration.
The metal part of metal mask 10 is constituted, i.e. part other than through hole 16 is as shown in Figure 6, it can along vapor deposition The outer rim of mask 100 is arranged, and can also make the size of metal mask 10 smaller than resin mask 20 as shown in Figure 7, make resin mask 20 outer peripheral portion exposes.Alternatively, it is also possible to keep the size of metal mask 10 bigger than resin mask 20, make one of metal part Divide prominent to the lateral outer side of resin mask or longitudinally outboard.In addition, under any circumstance, the size of through hole 16 is all than tree The big of rouge mask 20 is constituted slightly.
Transverse width (W1) and longitudinal direction to the metal part of the wall surface for the through hole for forming metal mask 10 shown in fig. 6 Width (W2) is not particularly limited, but as the width of W1, W2 narrow, the trend reduced with durability, operability.Therefore, It is preferred that W1, W2 are the width that can sufficiently meet durability, operability.Conjunction can be suitably set according to the thickness of metal mask 10 Suitable width, but an example as preferred width is as the metal mask of embodiment (A), W1, W2 be 1mm~ 100mm or so.
In addition, being regularly formed out on resin mask 20 in the deposition mask of above explained each embodiment Oral area 25, but when from 10 side of the metal mask of deposition mask 100 longitudinal can also configure laterally or mutually staggered Each opening portion 25 (not shown).That is, laterally adjacent opening portion 25 can also be in staggered configuration along longitudinal direction.It configures in this way, Even in the case that resin mask 20 thermally expands, also can use opening portion 25 and absorb the expansion throughout generated, Neng Goufang Only expansion is accumulated and generates big deformation.
In addition, can also be formed on resin mask 20 in the deposition mask of above explained each embodiment along tree The slot (not shown) of the vertical or horizontal extension of rouge mask 20.In the case where applying heat in vapor deposition, resin mask 20 is thermally expanded, Thus it is possible that generating variation in the size of opening portion 25 or position, but by forming slot, the expansion of resin mask can be absorbed, And it can prevent the thermal expansion generated everywhere in resin mask from accumulating and keep resin mask 20 whole to from given direction Expand and generate the size or change in location of opening portion 25.The forming position of slot is not limited, also can be set in composition 1 The position being overlapped between the opening portion 25 of picture or with opening portion 25, but be preferably disposed between picture.In addition, slot can be only arranged at The one side of resin mask, such as the face for the side that connects with metal mask, can also be only arranged at the face for the side that do not connect with metal mask. Or the two sides of resin mask 20 can also be set to.
Furthermore it is possible to be set as the slot extended longitudinally between adjacent picture, edge between adjacent picture can also be formed in The slot being laterally extended.Furthermore it is also possible to form slot in a manner of combining them.
The depth and its width of slot are not particularly limited, but the feelings wide in the too deep situation of the depth of slot or width Under condition, due to the trend rigidly reduced with resin mask 20, it is therefore desirable to consider that the point is set.In addition, for slot Cross sectional shape be also not particularly limited, U-shaped or V-shape etc. consider any selection such as processing method.For reality The deposition mask for applying mode (B) is also the same.
The manufacturing method > > of < < deposition mask
It is illustrated hereinafter, enumerating an example to the manufacturing method of the deposition mask of an embodiment.The steaming of one embodiment Plating mask 100 can be obtained by following methods: prepare to have the gap 15 metal mask in the face lamination setting of resin plate The metal mask of 10 resin plate is then swashed the metal mask of resin plate from 10 side of metal mask by the irradiation of gap 15 Light forms opening portion 25 corresponding with the pattern of vapor deposition production in resin plate.
The forming method of metal mask as resin plate has the gap 15 metal in the face lamination setting of resin plate Mask 10.The material illustrated in above-mentioned resin mask 20 can be used in resin plate.In addition, being formed as above-mentioned 1st method In the case where resin mask, coloured material ingredient is contained in resin plate, which is to the light transmittance of wavelength 550nm 40% or less.
The forming method that 15 metal mask 10 is had the gap as setting, by applying shielding portion on the surface of metal plate Part, such as erosion resistant and the exposure of position as defined in making, development, ultimately form residual formed have the gap 15 position resist Pattern.As the anticorrosive additive material for being used as curtain-shaped cover member, preferred process is good, the material with desired resolution.Then, will The resist pattern is used as etch resistant mask, is etched processing by etching method.After etching, it is against corrosion to clean removing Agent pattern.Thus the metal mask 10 that setting has the gap 15 is obtained.The etching for being used to form gap 15 can be from the list of metal plate Surface side carries out, and can also carry out from two sides.In addition, being formed using the laminated body on a metal plate equipped with resin plate in metal plate In the case where gap 15, curtain-shaped cover member is applied on the surface for the side of metal plate not connected with resin plate, by coming from single side The etching of side and form gap 15.In addition, in the case where resin plate has elching resistant relative to the etching material of metal plate, The surface of masking resin plate is not needed, but in the case where resin plate does not have patience relative to the etching material of metal plate, is needed Curtain-shaped cover member is applied on the surface of resin plate.In addition, among the above, being said centered on anticorrosive additive material as curtain-shaped cover member It is bright, but coating anticorrosive additive material is replaced, same composition can also be carried out with lamination dry type resist.
In the methods described above, the resin plate for constituting the metal mask of resin plate is not only the resin of plate, can also be with It is the resin layer or resin film formed by coating.That is, resin plate can be it is cut-and-dried, use metal plate and resin Plate formed resin plate metal mask in the case where, can also on a metal plate by formation such as currently known coating process most Become the resin layer or resin film of resin mask eventually.For example, being adjusted in the case where being formed as the resin mask of above-mentioned 1st method It makes and disperses or dissolves the material of above explained resin mask in solvent appropriate, coloured material ingredient, is added as needed Arbitrary ingredient resin plate coating liquid, be coated on metal plate and do by using currently known coating method It is dry, it can be as the resin plate of the resin mask 20 for obtaining above-mentioned 1st method.
As the forming method of opening portion 25, to the metal mask of the resin plate of above-mentioned preparation, using laser processing method, Precision stamping processing, lithography process etc. penetrate through resin plate, and open corresponding with the pattern of vapor deposition production is formed on resin plate Oral area 25 obtains folding in the one side of resin mask 20 for being provided with opening portion 25 corresponding with the pattern of vapor deposition production as a result, Layer setting has the gap the deposition mask 100 of an embodiment of 15 metal mask 10.In addition, from being capable of fine easy to form The aspect of opening portion 25 set out, it is preferable to use laser processing methods when forming opening portion 25.
In the case where the resin mask as above-mentioned 2nd method, can before forming opening portion 25 on resin plate shape At bepainting material layer 40, the opening portion 25 for penetrating through the bepainting material layer 40 and resin plate is formed, perforation resin plate can also be formed Opening portion 25, after obtaining resin mask 20, form bepainting material layer on the non-formation region in the opening portion of the resin mask 20 40。
Alternatively, it is also possible to form the stage before opening portion 25 on resin plate, the metal mask of resin plate is fixed on On frame.The deposition mask of completion is not fixed on frame, passes through the resin plate to the state for being fixed on frame Metal mask from rear be arranged opening portion, position precision can be significantly improved.In addition, consolidating by the deposition mask 100 of completion In the case where being scheduled on frame, due to fixing the metal mask for determining opening with frame while stretching, so opening position Set coordinate precision reduction.The fixing means of the deposition mask of frame 60 and resin plate is also not particularly limited, can be made It is fixed with by the fixed spot welding such as laser, bonding agent, fastened by screw or method in addition to this.
The deposition mask > > of < < tape frame
Then, the deposition mask of the tape frame of one embodiment of the present invention is illustrated.As shown in Figures 9 and 10, this hair The deposition mask 200 of the tape frame of a bright embodiment is characterized in that, deposition mask 100 is fixed on frame 60 and is formed, Deposition mask 100 be will be formed have the gap 15 metal mask 10 and the position being overlapped with the gap be formed with be deposited production The corresponding opening portion 25 of pattern 20 lamination of resin mask made of, the light transmittance of the wavelength 550nm of resin mask 20 It is 40% or less.According to the deposition mask 200 of the tape frame with this feature, High precision and lightweight both sides can met While, the opening portion for being formed in resin mask 20 also can be correctly carried out after deposition mask 100 is fixed on frame 60 Whether shape pattern normally confirms.
The deposition mask 200 of the tape frame of one embodiment of the present invention is as shown in Figure 9, it can is solid on frame 60 Surely there is the mode of a deposition mask 100, can also be as shown in Figure 10, it is to be fixed with multiple deposition masks 100 in frame 60 Mode.
(deposition mask)
The deposition mask 100 for constituting the deposition mask 200 of tape frame can be still using above explained of the invention one The deposition mask 100 of embodiment, in this detailed description will be omitted.In addition, the deposition mask of an embodiment said here Deposition mask (deposition mask of embodiment (A), embodiment (B)) comprising above explained preferred embodiment.
(frame)
Frame 60 is the frame part of rectangular shape, is had for making to be set to final fixed deposition mask 100 Resin mask 20 opening portion 25 vapor deposition source expose through hole.The material of frame is not particularly limited, it can be with Use rigidity big metal material, such as SUS, invar alloy material, ceramic material etc..Wherein, metal framework and deposition mask Metal mask welding be easy, deformation etc. influence it is small, be therefore preferred.
The thickness of frame is also not particularly limited, from the point of view of rigidity etc., preferably 10mm~30mm or so.Frame The inner circumferential end face of the opening of frame, frame peripheral end face between width as long as the metal of the frame and deposition mask can be covered The fixed width of mould, there is no particular limitation, for example, may be exemplified the width of 10mm~50mm or so.
In addition, as shown in Figure 11 (a)~(c) opening for the resin mask 20 for constituting deposition mask 100 can also do not interfered In the range of oral area 25 exposes, the frame 60 of reinforced frame 65 etc. is provided with using the region in through hole.In other words, frame 60 The opening having also can have the structure for being reinforced the segmentations such as frame.By the way that reinforced frame 65 is arranged, the reinforced frame is utilized 65 can be with fixed frame 60 and deposition mask 100.Specifically, above explained deposition mask 100 is along longitudinal direction and lateral When fixing multiple side by side, in the position that the reinforced frame and deposition mask are overlapped, deposition mask can also be fixed on frame 60 100。
The fixing means of frame 60 and deposition mask 100 is also not particularly limited, can be used solid by laser etc. Fixed spot welding, bonding agent, fastened by screw or method in addition to this are fixed.
< < deposition mask precursor > >
Then, the deposition mask precursor of one embodiment of the present invention is illustrated.One embodiment of the present invention Deposition mask precursor (not shown) is to obtain to be formed and having the gap 15 metal mask 10 and in the position being overlapped with the gap It is formed with deposition mask made of 20 lamination of resin mask of opening portion 25 corresponding with the pattern of vapor deposition production and uses, It is characterized in that, apertured metal mask is set in a face lamination of resin plate and is formed, light of the resin plate to wavelength 550nm Transmissivity is 40% or less.
The deposition mask precursor of one embodiment of the present invention except in addition to resin plate is not provided with 25 this point of opening portion, Common with the deposition mask 100 of an above explained embodiment, specific description is omitted.Vapor deposition as an embodiment is covered The specific composition of mould precursor, the metal that can enumerate the resin plate illustrated by the manufacturing method of above-mentioned deposition mask are covered Mould.
According to the deposition mask precursor of an above-mentioned embodiment, opened by being formed on the resin plate of the deposition mask precursor Oral area, it is available to meet High precision and lightweight both sides, and can be correctly to the shape for being formed in resin mask open portion Whether shape pattern is normally carried out the deposition mask of confirmation.
Among the above, as deposition mask precursor, enumerate wavelength 550nm light transmittance be 40% resin plate below Face lamination resin plate that apertured metal mask is set metal mask for be illustrated, can also will be in wavelength The light transmittance of 550nm is the tape tree that a face superimposed layer of 40% resin plate below is used to form the metal plate of metal mask The metal plate of rouge plate is as deposition mask precursor.In the deposition mask precursor, on the metal plate of the metal plate of resin plate Gap is formed, then, the opening portion being overlapped by the gap for being formed on resin plate with being formed in metal plate is available above-mentioned The deposition mask of the embodiment illustrated.
(manufacturing method of organic semiconductor device)
Then, the manufacturing method of the organic semiconductor device of one embodiment of the present invention is illustrated.One embodiment party The manufacturing method of the organic semiconductor device of formula includes the deposition mask for using the tape frame that deposition mask is secured on frame, The process that vapor deposition pattern is formed on vapor deposition object is fixed on the deposition mask of frame in the process for forming vapor deposition pattern It is characterized in that, is that will form apertured metal mask and be formed on the position being overlapped with the gap and vapor deposition production Made of the resin mask stack of the corresponding opening portion of pattern, in addition, the resin mask is to the light transmittance of wavelength 550nm 40% or less.
Vapour deposition method with the deposition mask by using tape frame forms an embodiment of the process of vapor deposition pattern Organic semiconductor device manufacturing method have formed on substrate the electrode forming process of electrode, organic layer formation process, Opposite electrode formation process, sealant formation process etc., in each arbitrary process, by using the deposition mask of tape frame Vapour deposition method formed on substrate vapor deposition pattern.For example, dividing in the luminescent layer formation process of R, G, B colors of organic el device Not using the vapour deposition method of the deposition mask of tape frame in the case where, the vapor deposition figure of assorted luminescent layer is formed on substrate Case.In addition, the manufacturing method of the organic semiconductor device of one embodiment of the present invention is not limited to these processes, it is applicable to make With the arbitrary process of the manufacture of the currently known organic semiconductor device of vapour deposition method.
The manufacturing method of the organic semiconductor device of one embodiment of the present invention is characterized in that, is forming above-mentioned vapor deposition In the process of pattern, the deposition mask that the tape frame of deposition mask is fixed on used frame is the above explained present invention An embodiment tape frame deposition mask 200, herein omit detailed description.According to having used the vapor deposition of tape frame to cover The manufacturing method of the organic semiconductor device of mould can form the organic semiconductor device of the pattern with fine.As logical The organic semiconductor device for crossing the manufacturing method manufacture of the organic semiconductor device of one embodiment of the present invention, can enumerate example Organic layer, luminescent layer or the cathode electrode of such as organic EL element.The especially organic semiconductor of one embodiment of the present invention The manufacturing method of element can be adapted for the manufacture of R, G, B luminescent layer of the organic EL element for the pattern accuracy for requiring fine.
(inspection method of deposition mask)
Then, the inspection method of the deposition mask of an embodiment is illustrated.The deposition mask of one embodiment Inspection method is following methods: apertured metal mask is arranged to lamination and is provided with out in the position being overlapped with the gap Deposition mask made of the resin mask of oral area irradiates visible light, according to the region, impermeable for penetrating visible light in resin mask It crosses visible light or is difficult to the contrast in region transmitted, be configured in the visual examination of the opening portion of resin mask, feature It is, the deposition mask for carrying out the irradiation of visible light is the deposition mask of an above explained embodiment.
The inspection method of deposition mask according to an embodiment, because the deposition mask for the inspection method is to have wave The deposition mask for the resin mask that the light transmittance of long 550nm is 40%, it is possible to improve the light and shade of captured shade Contrast, the inspection precision for being set to the opening portion of resin mask can be improved.It can be still using upper for deposition mask It states and illustrates mode in the deposition mask of an embodiment, omit detailed description herein.
The direction of illumination of visible light is not particularly limited, can be irradiated from the metal mask side of deposition mask Light can also irradiate visible light from the resin mask side of deposition mask.Radiation of visible light device is not also limited, Ke Yishi When selection uses the currently known device that can irradiate visible light.For the inspection method of the deposition mask in an embodiment Used in visible light be not particularly limited, the light containing such as ingredient of white light equiwavelength 550nm can be enumerated.
More than, it is 40% resin below to the light transmittance for having wavelength 550nm as best mode of the invention The deposition mask of mask 20 and deposition mask precursor for obtaining the deposition mask have used organic the half of the deposition mask The manufacturing method of conductor element, the inspection method of deposition mask are illustrated, but in the conduct as described in above-mentioned 1st method In the case where resin mask 20 containing coloured material ingredient, or contains in the conduct as described in above-mentioned 2nd method and be set to In the case where the resin mask 20 of bepainting material layer 40 on the non-formation region in opening portion, with the resin for being free of coloured material ingredient Mask or resin mask without bepainting material layer are compared, and the light transmittance of given wavelength can be reduced.It is saturating to reduce light It is associated with the inspection precision of opening portion is improved to penetrate rate, it, can be by reduction light transmittance compared with existing resin mask Amount improves the inspection precision of opening portion.
Therefore, the deposition mask of other embodiment is characterized in that, not saturating by light of the resin mask to wavelength 550nm The limitation of rate is penetrated, resin mask contains coloured material ingredient or is provided with bepainting material layer on resin mask.Preferably comprising can To reduce the coloured material ingredient or bepainting material layer of the light transmittance of wavelength 550nm.In addition, as above explained band frame The deposition mask of frame, the manufacturing method of organic semiconductor device, the inspection method of deposition mask, can also use have have should The deposition mask of the resin mask of feature.Furthermore it is also possible to before as the deposition mask for having the resin mask with this feature Body.

Claims (1)

1. a kind of deposition mask is will to be formed with the metal layer in metal openings portion and in the position being overlapped with the metal openings portion It is formed with made of the resin mask stack of resin opening portion corresponding with the pattern of vapor deposition production,
Wherein, the resin mask is 40% or less to the maximum value of the light transmittance of wavelength 450nm~650nm.
CN201910716655.1A 2014-06-06 2015-05-29 The manufacturing method of deposition mask and its precursor and organic semiconductor device Pending CN110306156A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-117755 2014-06-06
JP2014117755 2014-06-06
CN201580022365.7A CN106536784B (en) 2014-06-06 2015-05-29 The manufacturing method of deposition mask and its precursor and organic semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580022365.7A Division CN106536784B (en) 2014-06-06 2015-05-29 The manufacturing method of deposition mask and its precursor and organic semiconductor device

Publications (1)

Publication Number Publication Date
CN110306156A true CN110306156A (en) 2019-10-08

Family

ID=55452280

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201910716655.1A Pending CN110306156A (en) 2014-06-06 2015-05-29 The manufacturing method of deposition mask and its precursor and organic semiconductor device
CN201580022365.7A Active CN106536784B (en) 2014-06-06 2015-05-29 The manufacturing method of deposition mask and its precursor and organic semiconductor device
CN201910716987.XA Active CN110344003B (en) 2014-06-06 2015-05-29 Vapor deposition mask, precursor thereof, and method for manufacturing organic semiconductor element
CN201910716986.5A Active CN110331365B (en) 2014-06-06 2015-05-29 Vapor deposition mask, precursor thereof, and method for manufacturing organic semiconductor element

Family Applications After (3)

Application Number Title Priority Date Filing Date
CN201580022365.7A Active CN106536784B (en) 2014-06-06 2015-05-29 The manufacturing method of deposition mask and its precursor and organic semiconductor device
CN201910716987.XA Active CN110344003B (en) 2014-06-06 2015-05-29 Vapor deposition mask, precursor thereof, and method for manufacturing organic semiconductor element
CN201910716986.5A Active CN110331365B (en) 2014-06-06 2015-05-29 Vapor deposition mask, precursor thereof, and method for manufacturing organic semiconductor element

Country Status (2)

Country Link
JP (4) JP6471680B2 (en)
CN (4) CN110306156A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110306156A (en) * 2014-06-06 2019-10-08 大日本印刷株式会社 The manufacturing method of deposition mask and its precursor and organic semiconductor device
JP6658790B2 (en) * 2018-04-19 2020-03-04 大日本印刷株式会社 Evaporation mask, evaporation mask with frame, evaporation mask preparation, method of manufacturing evaporation mask, method of manufacturing organic semiconductor element, method of manufacturing organic EL display, and method of forming pattern
CN112522667B (en) * 2019-09-17 2022-06-21 京东方科技集团股份有限公司 Mask and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013105643A1 (en) * 2012-01-12 2013-07-18 大日本印刷株式会社 Vapor deposition mask manufacturing method and organic semiconductor element manufacturing method

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239922A (en) * 1988-03-22 1989-09-25 Seiko Epson Corp Pattern defect inspecting device
JPH09143677A (en) * 1995-11-20 1997-06-03 Toppan Printing Co Ltd Formation of transparent conductive film
JP3760086B2 (en) * 2000-07-07 2006-03-29 株式会社ルネサステクノロジ Photomask manufacturing method
US6897164B2 (en) * 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
JP3711083B2 (en) * 2002-04-12 2005-10-26 株式会社東芝 Pattern formation method
JP4220231B2 (en) * 2002-12-24 2009-02-04 東芝松下ディスプレイテクノロジー株式会社 Display panel substrate manufacturing method
CN100437960C (en) * 2003-02-25 2008-11-26 京瓷株式会社 Print mask and method of manufacturing electronic components using the same
JP2004304024A (en) * 2003-03-31 2004-10-28 Nippon Steel Chem Co Ltd Polyimide film for coating electronic component
JP2005068501A (en) * 2003-08-26 2005-03-17 Toppan Printing Co Ltd Metal mask for sputtering, and method for producing transparent conductive film using the same
JP2005291874A (en) * 2004-03-31 2005-10-20 Hoya Corp Unevenness defect inspection method and device of pattern
JP4225979B2 (en) * 2005-03-11 2009-02-18 東京応化工業株式会社 Photosensitive laminated printing original for letter press printing and method for producing letter press printing using the photosensitive laminated printing original for letter press printing
JP2006292862A (en) 2005-04-07 2006-10-26 Ushio Inc Pattern forming method
JP4181159B2 (en) 2005-09-29 2008-11-12 株式会社東芝 Defect inspection equipment
US8230371B2 (en) * 2007-05-23 2012-07-24 Nxp B.V. Process-window aware detection and correction of lithographic printing issues at mask level
JP2010027802A (en) * 2008-07-17 2010-02-04 Fujifilm Corp Surface processing method, mask for surface processing, and optical device
CN101989038B (en) * 2009-07-30 2013-05-08 北京京东方光电科技有限公司 Mask detection device and detection method
JP5306391B2 (en) * 2011-03-02 2013-10-02 株式会社東芝 Photo mask
WO2013039196A1 (en) * 2011-09-16 2013-03-21 株式会社ブイ・テクノロジー Vapor-deposition mask, vapor-deposition mask manufacturing method, and thin-film pattern forming method
JP5935179B2 (en) * 2011-12-13 2016-06-15 株式会社ブイ・テクノロジー Vapor deposition mask and vapor deposition mask manufacturing method
US9108216B2 (en) * 2012-01-12 2015-08-18 Dai Nippon Printing Co., Ltd. Vapor deposition mask, method for producing vapor deposition mask device and method for producing organic semiconductor element
CN105355796B (en) * 2012-01-12 2017-06-13 大日本印刷株式会社 Layout deposition mask
CN102747319A (en) * 2012-06-29 2012-10-24 中国科学院半导体研究所 Preparation method of flexible mask plate
JP5958824B2 (en) * 2012-11-15 2016-08-02 株式会社ブイ・テクノロジー Manufacturing method of vapor deposition mask
CN110306156A (en) * 2014-06-06 2019-10-08 大日本印刷株式会社 The manufacturing method of deposition mask and its precursor and organic semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013105643A1 (en) * 2012-01-12 2013-07-18 大日本印刷株式会社 Vapor deposition mask manufacturing method and organic semiconductor element manufacturing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
章鲁等: "《医学图像处理与分析》", 31 August 2006 *

Also Published As

Publication number Publication date
JP7191060B2 (en) 2022-12-16
JP2022031428A (en) 2022-02-18
JP2020143371A (en) 2020-09-10
CN110344003B (en) 2022-03-15
JP2016033265A (en) 2016-03-10
CN110331365B (en) 2021-10-01
CN110344003A (en) 2019-10-18
CN106536784B (en) 2019-08-30
CN110331365A (en) 2019-10-15
CN106536784A (en) 2017-03-22
JP2019070200A (en) 2019-05-09
JP6471680B2 (en) 2019-02-20
JP6687137B2 (en) 2020-04-22

Similar Documents

Publication Publication Date Title
CN105637113B (en) The manufacturing method of deposition mask, the deposition mask of tape frame and organic semiconductor device
TWI778455B (en) Evaporation mask, frame-attached vapor deposition mask, vapor deposition mask preparation, manufacturing method of organic semiconductor element, and pattern forming method
CN105143497B (en) Deposition mask, deposition mask prepare the manufacture method of body, the manufacture method of deposition mask and organic semiconductor device
CN106536784B (en) The manufacturing method of deposition mask and its precursor and organic semiconductor device
KR101934244B1 (en) Deposition mask, preparatory body for deposition mask, method for manufacturing deposition mask, and method for manufacturing organic semiconductor element
CN105803388B (en) The manufacturing method of deposition mask and the manufacturing method of organic semiconductor device
CN107855641A (en) Deposition mask, deposition mask prepare body, the manufacture method of deposition mask and the manufacture method of organic semiconductor device
CN109790615A (en) The manufacturing method of the manufacturing method of deposition mask, the manufacturing method of organic semiconductor device and organic el display
CN109913802A (en) Deposition mask, the deposition mask of tape frame and their manufacturing method
JP6323266B2 (en) Deposition mask inspection method
CN107675127B (en) Mask plate and preparation method thereof
Hada et al. The kinematic of HST-1 in the jet of M 87

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20191008