CN106536784A - Vapor deposition mask, vapor deposition mask with frame, vapor deposition mask precursor, and method for manufacturing organic semiconductor element - Google Patents

Vapor deposition mask, vapor deposition mask with frame, vapor deposition mask precursor, and method for manufacturing organic semiconductor element Download PDF

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Publication number
CN106536784A
CN106536784A CN201580022365.7A CN201580022365A CN106536784A CN 106536784 A CN106536784 A CN 106536784A CN 201580022365 A CN201580022365 A CN 201580022365A CN 106536784 A CN106536784 A CN 106536784A
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China
Prior art keywords
mask
resin
deposition mask
peristome
deposition
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CN201580022365.7A
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CN106536784B (en
Inventor
武田利彦
川崎博司
小幡胜也
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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Priority to CN201910716655.1A priority Critical patent/CN110306156A/en
Priority to CN201910716987.XA priority patent/CN110344003B/en
Priority to CN201910716986.5A priority patent/CN110331365B/en
Priority claimed from PCT/JP2015/065605 external-priority patent/WO2015186632A1/en
Publication of CN106536784A publication Critical patent/CN106536784A/en
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Publication of CN106536784B publication Critical patent/CN106536784B/en
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Abstract

The problems addressed by the present invention are to provide a vapor deposition mask that satisfies both increased precision and reduced weight while confirmation and the like of a shape pattern for opening parts formed in a resin mask being normal or not can be reliably carried out; to provide a vapor deposition mask precursor for obtaining this vapor deposition mask; to provide a vapor deposition mask with a frame that is provided with this vapor deposition mask; and further to provide a method for manufacturing an organic semiconductor element using this vapor deposition mask with the frame. The problems above are solved by a vapor deposition mask (100) formed from a lamination of a metal mask (10) wherein slits (15) are formed and a resin mask (20) wherein opening parts (25) corresponding to a deposition fabrication pattern are formed in positions overlapping the slits, and by using a resin mask through which light rays with a wavelength of 550 nm pass at 40% or less.

Description

Deposition mask, the deposition mask of tape frame, deposition mask precursor and organic semiconductor unit The manufacture method of part
Technical field
The present invention relates to the system of the deposition mask of deposition mask, tape frame, deposition mask precursor and organic semiconductor device Make method.
Background technology
With the maximization or the maximization of substrate size of the product using organic EL element, deposition mask is maximized Requirement is also continuously increased.And, the metallic plate for manufacturing the deposition mask being made up of metal also maximizes.However, current Metalworking technology in, it is difficult to accurately form peristome on large-scale metallic plate, it is impossible to tackle the high-precision of peristome Refinement.In addition, when as the deposition mask being only made up of metal, as with maximization, its quality also increases, comprising framework Also increase in interior gross mass, therefore obstruction can be brought to operation.
In such a case, Patent Document 1 discloses lamination to arrange apertured metal mask and configure in length and breadth Multiple row is located at the deposition mask of metal mask surface the resin mask of peristome corresponding with the pattern that evaporation makes. According to the deposition mask disclosed in patent documentation 1, even if in the case of maximization, it is also possible to meet High precision and lightweight The two, furthermore, it is possible to carry out the formation of the evaporation pattern of fine.
Prior art literature
Patent documentation
Patent documentation 1:Patent the 5288072nd is public
The content of the invention
Invent problem to be solved
The present invention major subjects be, there is provided can be while both High precision and lightweight be met, moreover it is possible to right It is formed at the whether normal deposition mask for correctly being checked of character pattern in resin mask open portion;And provide for obtaining The deposition mask precursor of the deposition mask;And the deposition mask of the tape frame for possessing the deposition mask is provided;Further provide for The manufacture method of the organic semiconductor device of the deposition mask of the tape frame is used.
For solving the scheme of problem
The present invention for solving the problem provides a kind of deposition mask, its be will be formed apertured metal mask and In the resin mask stack for being formed with peristome corresponding with the pattern of evaporation making with the position that the gap overlaps, its It is characterised by, the resin mask is less than 40% to the light transmittance of wavelength 550nm.
In the invention, preferably described resin mask contains coloured material composition.Additionally, it is preferred that the resin mask Thickness is 3 μm less than 10 μm.
In addition, the present invention for solving the problem provides a kind of deposition mask of tape frame, which is by deposition mask Be fixed on framework, it is characterised in that the deposition mask be will be formed apertured metal mask and with the seam The position that gap overlaps is formed with the resin mask stack of peristome corresponding with the pattern of evaporation making, and the resin is covered Mould is less than 40% to the light transmittance of wavelength 550nm.
In addition, the present invention for solving the problem provides a kind of deposition mask precursor, which is used for obtaining being formed with The metal mask in gap and the resin in peristome corresponding with the pattern that the position that the gap overlaps is formed with evaporation makes The deposition mask of mask stack, it is characterised in that be provided with the metal mask in gap, institute in a face superimposed layer of resin plate It is less than 40% that resin plate is stated to the light transmittance of wavelength 550nm.
In addition, the present invention for solving the problem provides a kind of manufacture method of organic semiconductor device, its feature It is to form evaporation figure comprising the deposition mask of the tape frame for being fixed with deposition mask on framework is used on evaporation object The operation of case, in the operation for forming the evaporation pattern, the deposition mask lamination for being fixed on the framework is formed with The metal mask in gap and the resin in peristome corresponding with the pattern that the position that the gap overlaps is formed with evaporation makes Mask, and the resin mask is less than 40% to the light transmittance of wavelength 550nm.
The effect of invention
The deposition mask of deposition mask of the invention, tape frame, can meet High precision and lightweight both sides While, moreover it is possible to whether the character pattern to being formed at resin mask open portion normally correctly checks.In addition, according to this The deposition mask precursor of invention, can easily manufacture the deposition mask of features described above.Organic partly lead in addition, of the invention The manufacture method of volume elements part, can accurately manufacture organic semiconductor device.
Description of the drawings
Fig. 1 (a) is the front elevation of the deposition mask for observing an embodiment from metal mask side, (b) is that the A-A of (a) is cutd open Face figure;
Fig. 2 is the front elevation of the deposition mask for observing embodiment (A) from metal mask side;
Fig. 3 is the front elevation of the deposition mask for observing embodiment (A) from metal mask side;
Fig. 4 is the front elevation of the deposition mask for observing embodiment (A) from metal mask side;
Fig. 5 is the front elevation of the deposition mask for observing embodiment (A) from metal mask side;
Fig. 6 is the front elevation of the deposition mask for observing embodiment (B) from metal mask side;
Fig. 7 is the front elevation of the deposition mask for observing embodiment (B) from metal mask side;
Fig. 8 (a)~(d) is that the outline of the deposition mask of the state for schematically showing the transmitted light through resin mask is cutd open Face figure, (a)~(c) are the deposition masks of an embodiment, (d) are the deposition masks for comparing;
Fig. 9 is the front elevation of of the deposition mask for representing tape frame;
Figure 10 is the front elevation of of the deposition mask for representing tape frame;
Figure 11 is the front elevation of of representational framework;
Figure 12 (a)~(e) is the echo of the sample 1,2,4~6 of resin mask respectively.
Description of symbols
100 ... deposition masks
10 ... metal masks
15 ... gaps
16 ... through holes
20 ... resin masks
25 ... peristomes
40 ... bepainting material layers
60 ... frameworks
The deposition mask of 200 ... tape frames
Specific embodiment
< < deposition mask > >
Hereinafter, the deposition mask 100 of one embodiment of the present invention is specifically illustrated.As shown in figure 1, one implements The deposition mask 100 of mode is formed with the metal mask 10 in gap 15 using lamination and is formed in the position overlapped with the gap 15 There is the structure of the resin mask 20 of peristome corresponding with the pattern that evaporation makes 25.Additionally, Fig. 1 (a) is from metal mask 10 The front elevation of the deposition mask of an embodiment is observed in side, (b) is the A-A summary sections of (a).
(resin mask)
As shown in figure 1, being provided with multiple peristomes 25 on resin mask 20.And, one embodiment of the present invention Deposition mask 100 is characterised by that the light transmittance of the wavelength 550nm of resin mask 20 is less than 40%.
Using the deposition mask 100 of an embodiment when making evaporation pattern in the vapor deposited surface of object is deposited with, Make the face of the vapor deposited surface of evaporation object and 20 side of resin mask of deposition mask 100 opposed, make being steamed for evaporation object The resin mask 20 of surfacing and deposition mask is carried out in the state of touching.And, by the deposition material for making to be released by vapor deposition source The vapor deposited surface of evaporation object is attached to by being formed at the peristome 25 of resin mask 20, in being deposited with for evaporation object The 25 corresponding evaporation pattern of peristome for making on face and being formed at resin mask 20.Additionally, for having used an embodiment The evaporation coating method of deposition mask do not make any restriction yet, for example, can enumerate sputtering method, vacuum vapour deposition, ion plating, The physical vaporous depositions such as electric beam vapour deposition method (Physical Vapor Deposition), hot CVD, plasma CVD, optical cvd Chemical vapour deposition techniques such as method (chemical vapor deposition) etc..
That is, make in the method for evaporation pattern in the vapor deposited surface of above-mentioned evaporation object, be formed at evaporation object Vapor deposited surface evaporation pattern be formed from resin mask 20 peristome 25 patterns of openings determine.Therefore, such as in evaporation The evaporation pattern to be formed is wished in the vapor deposited surface of object like that, forms opening on the resin mask 20 of deposition mask 100 The patterns of openings in portion 25 is most important, in deposition mask using front, that is, after carrying out the manufacture of deposition mask, needs inspection to be formed at Whether the patterns of openings of the peristome 25 of the resin mask 20 of the deposition mask 100 is such as wished in the vapor deposited surface of evaporation object Hope that the evaporation pattern for being formed is formed like that.
Whether it is in evaporation as the patterns of openings of the peristome 25 for differentiating the resin mask 20 for being formed at deposition mask 100 In the vapor deposited surface of object, one of desired inspection method of evaporation pattern for being formed, has following methods:Using covering to resin Mould 20 irradiates visible ray, is formed by the region in resin mask 20 through the visible ray, the region for being not through or being difficult to pass through Shade carries out the inspection of the patterns of openings for being formed at resin mask 20.Specifically, it is following methods:From resin mask 20 not The surface side connected with metal mask 10 to resin mask 20 irradiate visible ray, using photographing unit from metal mask 10 not with resin The surface side that mask 20 connects shoots the transmitted light, or covers from the surface side not connected with resin mask 20 of metal mask 10 to resin Mould 20 irradiates visible ray, shoots the transmitted light using photographing unit from the surface side not connected with metal mask 10 of resin mask 20, The shade obtained using captured transmitted light carries out the inspection of the patterns of openings for being formed at resin mask 20.
In the case of the inspection of above-mentioned patterns of openings is carried out, it is from cannot be through in the mask for being formed with peristome In the case of mask made by the metal material of light, be formed at the shade of the patterns of openings of the peristome of the mask light and shade it is right It is higher than degree, the inspection of patterns of openings can be carried out with having no problem.On the other hand, it is by passing through in the mask for being formed with peristome In the case of mask made by the resin material of visible ray, the light and shade of the shade of the patterns of openings of the peristome of the mask is formed at Contrast reduce, generation can not fully carry out the problem of the inspection of patterns of openings.That is, gap 15 is being formed with using lamination Metal mask 10 and the resin in peristome corresponding with the pattern that the position that the gap 15 overlaps is formed with evaporation makes 25 The structure of mask 20, in the deposition mask that can meet High precision and lightweight both sides, intrinsic problem is can not be correct The inspection of patterns of openings that carries out being formed at resin mask open portion.However, present situation can be to meet High precision and light weight Change both sides above-mentioned deposition mask do not account for resin mask 20 irradiate visible ray when transmission of visible light, specifically, Do not account for resin mask 20 the region (below, the sometimes referred to as non-formation region of peristome) for not forming peristome 25 it is visible The absorbance of light.In order to improve the contrast of the light and shade of the shade that captured transmitted light is formed, preferred only resin mask 20 Peristome 25 passes through visible ray, is not through visible ray in the non-formation region of the peristome of resin mask 20, or its absorbance is low.So And, in the absorbance for visible ray does not have the existing resin mask of any consideration, the peristome of resin mask is non-formation Region also passes through visible ray, and the contrast of the light and shade of the shade shot by photographing unit is reduced, it is difficult to the correct edge for holding shade Portion, in other words, it is difficult to the edge part of the correct patterns of openings for holding the peristome 25 for being formed at resin mask 20.Can not be correct In the case of holding edge part, it is difficult to check the patterns of openings of the peristome 25 for being formed at resin mask 20 of deposition mask 100 It is whether the evaporation pattern formed desired by the vapor deposited surface in evaporation object.
The deposition mask 100 of one embodiment of the present invention is characterised by, the light of the wavelength 550nm of resin mask 20 Absorbance is less than 40%, according to the deposition mask 100, when visible ray is irradiated to resin mask 20, this can be suppressed visible The non-formation region of peristome of light transmission resin mask 20, the light and shade contrast for improving the shade shot by photographing unit, can be correct The edge part of shade is held, the edge of the patterns of openings of the peristome 25 for being formed at resin mask 20 in other words can be correctly held Portion.Thus, it is possible to differentiate whether the patterns of openings of the peristome 25 for being formed at resin mask 20 of deposition mask 100 is in evaporation The desired evaporation pattern for being formed of the vapor deposited surface of object.In particular according to the deposition mask of one embodiment of the present invention, Due to being formed with peristome 25 on the mask by made by resin material, it is possible to which the peristome 25 of the mask is formed as high Fine peristome.Generally, with the High precision of peristome 25, the contrast of the light and shade of captured shade has becoming for reduction Gesture, as described above, is formed as the light transmittance of wavelength 550nm is defined as less than 40% resin mask 20 in the present invention, because This, can fully improve the contrast of the light and shade of shade.Therefore, in the case where 25 High precision of peristome is made, for example, even if The situation of the resin mask for being formed into being formed with the fine peristome 25 more than 400ppi, it is also possible to correctly carry out the opening The inspection of the patterns of openings in portion 25.
In present specification, the light transmittance of described resin mask 20 is referred to through non-shape in resin mask 20 Into the absorbance of the light in the non-formation region of the region for having peristome 25 i.e. peristome.
The light transmittance of visible ray can use spectrophotometer (MPC-3100) of (strain) Shimadzu Seisakusho Ltd. etc. to survey It is fixed.
In the deposition mask 100 of one embodiment of the present invention, the light of the wavelength 550nm of resin mask 20 is transmitted Rate is defined as 40% and the following is because wavelength 550nm is the wavelength of the approximate centre of visible ray, by making the light of wavelength 550nm Absorbance is less than 40%, can fully improve the contrast of the light and shade by irradiating the shade captured by visible ray.More specifically For, in incident illumination be transmitted light source spectrum such as white light source spectrum in the approximate centre containing visible ray wavelength i.e. The wavelength of 550nm, therefore, it is less than 40% by the light transmittance for making wavelength 550nm, can fully improves captured the moon The contrast of the light and shade of shadow.Additionally, in the case where the light transmittance of wavelength 550nm is more than 40%, it is impossible to fully improve and shine The contrast of the light and shade of shade when penetrating visible ray, it is impossible to the correct edge part for holding shade.The light transmittance of wavelength 550nm As long as the condition for less than 40% is met as mentioned above, preferably less than 30%, more preferably less than 10%.For under Limit value is not particularly limited, and is 0%.In the case that particularly the light transmittance of wavelength 550nm is less than 10%, more can fill Divide the contrast of the light and shade for improving shade, therefore can further improve inspection precision.
Further, the light transmittance for being preferably formed into wavelength 550nm is less than 40%, the light of wavelength 450nm~650nm The maximum of absorbance is that less than 55% resin mask, the particularly light transmittance of wavelength 550nm are less than 40%, wavelength The maximum of the light transmittance of 380nm~780nm is less than 55% resin mask.In addition, being more preferably formed as wavelength The maximum of the light transmittance of 450nm~650nm, particularly wavelength 380nm~780nm is less than 40% resin mask. In addition, being less than 40% further preferably as the light transmittance of wavelength 550nm, it is seen that the light transmittance of wavelength region Maximum be less than 55% resin mask, be particular preferably formed into the maximum of the light transmittance of visible wavelength region For less than 40% resin mask.Most preferably the maximum of the light transmittance of 450nm~650nm is less than 10%, especially Be the light transmittance of wavelength 380nm~780nm maximum be less than 10% resin mask, or visible wavelength region Light transmittance maximum be less than 10% resin mask.Visible wavelength region said here is referred to by JIS- Z8120 (2001) given wave-length coverage, short wavelength 360~400nm of boundary, long wavelength 760~830nm of boundary.Ripple is made not only The light transmittance of long 550nm, and the light transmittance of wavelength 380nm~780nm or visible wavelength region is made also for upper Preferred scope is stated, the contrast deviation of the light and shade such that it is able to suppress shade in wide wavelength can further improve shade Light and shade contrast.
For the material of resin mask 20 is not limited, the opening that can form fine by Laser Processing etc. is preferably used Portion 25, the size changing rate and hydroscopicity caused during Yin Re or Jing are little, and the material of light weight.As this material, can enumerate It is polyimide resin, polyamide, polyamide-imide resin, polyester resin, polyvinyl resin, polyvinyl alcohol resin, poly- Allyl resin, polycarbonate resin, polystyrene resins, polyacrylonitrile resin, ethylene-vinyl acetate copolymer resin, ethylene- Vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, Corvic, polyvinylidene chloride resin, glass Paper, ionomer resin etc..It is also preferred that thermal coefficient of expansion is less than 16ppm/ DEG C of resin material among foregoing illustrative material, It is preferred that hydroscopicity is less than 1.0% resin material, the resin material for particularly preferably possessing the condition of the both sides.Made by making With the resin mask of the resin material, the dimensional accuracy of peristome 25 can be improved, and is caused when can reduce because of heat or Jing Size changing rate and hydroscopicity.Among the material of foregoing illustrative resin mask, particularly preferred material is polyimides Resin.
For the wavelength 550nm's for making the resin mask 20 in the resin mask 20 by made by foregoing illustrative material etc. Light transmittance is that less than 40% method is not particularly limited, and for example, is formed as the 1st following side by making resin mask 20 The composition of method~the 3rd method is capable of achieving.In addition, resin mask 20 is not limited to the composition of following explanation, as a result it is resin mask 20 Wavelength 550nm light transmittance be less than 40%.According to each method of following explanation, shown in such as Fig. 8 (a)~(c), Visible ray is not transmitted through the non-formation region of peristome of resin mask 20 or can suppress the transmission, can fully improve shade The contrast of light and shade.On the other hand, shown in such as Fig. 8 (d), in existing deposition mask 100X, visible ray easily passes through resin mask The non-formation region of peristome of 20X, it is impossible to fully improve the contrast of the light and shade of shade.
(the 1st method)
Shown in 1st method such as Fig. 8 (a), made in the resin mask 20 being made up of foregoing illustrative material etc. containing coloring Material composition, the light transmittance for making wavelength 550nm are less than 40% method.In other words, the resin mask 20 of the 1st method with Foregoing illustrative material etc. contains coloured material composition together.For coloured material composition is not particularly limited, as long as appropriate select The light transmittance for selecting the wavelength 550nm that can make resin mask 20 is less than 40% material and content.Coloured material Composition can be organic material, or inorganic material, suitably can select using currently known dyestuff, pigment, they Microgranule etc..As long as in addition, the light transmittance that can make the wavelength 550nm of resin mask 20 is less than 40%, then can also Using the material beyond these.Coloured material composition can be used alone one kind, can also simultaneously with two or more.In addition, conduct The coloured material composition that resin mask 20 contains, as long as consider to select form resin mask 20, or work during resin plate described later Skill temperature etc..For example, in the case of the materials'use polyimide resin as resin mask, preferably use thermostability High coloured material composition.For the shape of coloured material composition is also not particularly limited, using currently known shape, example The particles such as such as spherical, needle-like, flakey, in addition, for size is also not particularly limited.In addition, such as coloured material composition Size more than 1 μm, then when as the resin mask 20 containing coloured material composition, be also easy to produce the defects such as projection.Consider the point When, preferably the size of coloured material composition is less than 1 μm.For the lower limit of size is not particularly limited, it is 1nm or so.
As one of coloured material composition, for example, can enumerate carbon black, titanium oxide, titanium dioxide, black iron oxide, yellow Ferrum oxide, red iron oxide, manganese oxide, manganese dioxide, chromium oxide, chromium dioxide, silicon oxide, silicon dioxide, ultramarine, aniline Black, activated carbon etc..Additionally, the content with coloured material composition increases, the intensity of resin mask has the trend of reduction, is using Deposition mask makes the evaporation operation of evaporation pattern and the clean operation of clean deposition mask in the vapor deposited surface of evaporation object In, useful life longevity is easily reduced.Accordingly, as coloured material composition, shape and the material of light-proofness raising is preferably used, is subtracted The content of few coloured material composition.The little black material composition of coloured material composition optimal wavelength dependency.Foregoing illustrative Among coloured material composition, carbon black, the black ferrum of oxidation, titanium oxide, titanium dioxide are particularly preferred coloured material compositions.Coloring material The content of material composition is preferably below 20 mass % relative to the gross mass of the resin material of resin mask, more preferably 10 matter Amount below %, below particularly preferably 6 mass %.This is because tree of the content of coloured material composition relative to resin mask 20 When total quality of fat material is more than 20 mass %, the dispersibility of the coloured material composition in resin mask 20 is uneven, is containing There is defects count increase in the resin mask 20 of coloring material composition, cause the intensity decreases of resin mask.
In addition, the resin mask 20 of the 1st method is in addition to the material, coloured material composition of above-mentioned resin mask, can be with Containing arbitrary composition.For example, dispersant etc., can arbitrarily cooperatively form the composition required for the resin mask of the 1st method.It is right In the 2nd method described later resin mask 20 bepainting material layer 40 similarly.
For the thickness of the resin mask 20 of the 1st method is not particularly limited, shade is suppressed to produce further improving In the case of raw effect, preferably shorter than 10 μm of the thickness of resin mask 20.For the preferred scope of lower limit is not especially limited It is fixed, in the case where the thickness of resin mask 20 is less than 3 μm, the defects such as pin hole are also easy to produce, also deforming equivalent risk increases.Especially Be resin mask 20 thickness be 3 μm less than 10 μm, preferably less than more than 4 μm 8 μm, it is possible thereby to more effectively prevent The impact of shade when only forming over the fine pattern of 400ppi.In addition, resin mask 20 and metal mask described later 10 Can directly engage, it is also possible to engage via bond layer, engage via bond layer in resin mask 20 and metal mask 10 In the case of, the aggregate thickness of preferred resin mask 20 and bond layer is in above-mentioned preferred thickness range.Additionally, shade is Refer to due to the part for deposition material released from vapor deposition source and the gap of metal mask or the inwall of the peristome of resin mask Face is collided and cannot reach evaporation object, so as to the non-evaporated segment of the thickness of the evaporation film thickness of producing ratio target shows As.
(the 2nd method)
Shown in 2nd method such as Fig. 8 (b), it is non-by the peristome in the resin mask 20 not connected with metal mask 10 Bepainting material layer 40 is formed in forming region, and the light transmittance for thus making the wavelength 550nm of resin mask 20 is less than 40% Method.Additionally, bepainting material layer said here 40 is the layer for being contained in resin mask 20.As long as that is, resin mask 20 and The light transmittance of the wavelength 550nm of the laminated body of color material layer 40 is less than 40%.
The coloured material composition that the material of bepainting material layer is illustrated in suitably selecting above-mentioned 1st method, as long as formed contain The layer of the coloured material composition.For the thickness of bepainting material layer 40 is not particularly limited, preferred resin mask 20 and Total thickness of color material layer 40 is the thickness of the resin mask 20 illustrated in above-mentioned 1st method.
(the 3rd method)
Shown in 3rd method such as Fig. 8 (c), it is the thickness by thickening resin mask, makes the light transmittance of wavelength 550nm For less than 40% method.
By the 3rd method, the light transmittance that can make wavelength 550nm is that the thickness of less than 40% resin mask 20 can Suitably set with material according to resin mask etc., but usually more than 30 μm.
As described above, in the case of for the purpose of suppressing shade to produce, preferably shorter than 10 μm of the thickness of resin mask. Therefore, in the present invention, it is preferred to use above-mentioned 1st method or above-mentioned 2nd method, be formed as the light transmittance of wavelength 550nm For less than 40% resin mask 20.In addition, in the resin mask 20 of the 2nd method, intrinsic problem is bepainting material layer 40 Problem from the stripping of resin mask 20, the resin mask in the clean operation for cleaning deposition mask 100 or in order to obtain the 2nd method 20 and stage for forming peristome 25 is peeling the problem of piece.According to making resin mask 20 the containing coloured material composition the 1st The resin mask of method, these problems are not present, and compare with the resin mask 20 of the 2nd method, it may be said that be preferred method.Separately Outward, in the resin mask of the 3rd method, intrinsic problem is to form peristome 25 by thickening the thickness of resin mask 20 When time increased problem or energy increase when forming peristome 25 by Laser Processing etc., be also easy to produce shade etc. and ask Topic, in this it may be said that it is preferred that the 1st method, the resin mask of the 2nd method.
In addition, when forming peristome 25 using Laser Processing etc. on resin mask, the material of resin mask is in peristome In 25, or the vicinity of peristome 25 also tend to exist as impurity, its resin mask 20 itself of resin mask 20 tool of the 1st method There is the function of the transmission for suppressing visible ray, i.e. the impurity that the material of resin mask causes itself also has the saturating of suppression visible ray The function of penetrating.Therefore, the resin mask 20 according to the 1st method, the not only edge part of peristome 25, and for resin mask The impurity that material causes, correctly can also be held by shade.In addition, according to the tree of the 1st method containing coloured material composition Fat mask 20, is easily adjusted absorbance, and the light transmittance that can be simply forming wavelength 550nm is that less than 40% resin is covered Mould 20.
In addition, in the resin mask 20 of the deposition mask 100 of an embodiment, the 1st of described above the can also be combined Method~the 3rd method.In addition, combination various methods in addition, it is also possible to which the light transmittance for forming wavelength 550nm is Less than 40% resin mask 20.
As shown in Fig. 8 (a)~(c), according to the resin mask 20 that the light transmittance of wavelength 550nm is less than 40%, can With the transmitted light for being not through visible ray or suppressing the non-formation region of peristome for passing through resin mask.Fig. 8 (d) is to schematically show To existing deposition mask irradiate visible ray when through peristome 25, and the non-formation region of peristome transmission light state evaporation The summary section of mask.As a comparison, also schematically show in Fig. 8 (a)~(c) through peristome 25, and peristome it is non- The state of the transmitted light of forming region.
For the superiority of resin mask that the light transmittance for confirming wavelength 550nm is less than 40%, prepare table 1 below institute The sample 1~10 of the resin mask for showing, carries out the confirmation of the light and shade of shade.Figure 12 illustrates direct-shadow image.In addition, Figure 12 (a) and sample 1 correspondence of product, Figure 12 (b) are corresponding with sample 2, and Figure 12 (c) is corresponding with sample 4, and Figure 12 (d) is corresponding with sample 5, Figure 12 (e) and sample 6 correspondence of product.Sample 8 is the contrast equal with the direct-shadow image shown in Figure 12 (c).The contrast of sample 3,7,9,10 compares Figure 12 C the direct-shadow image shown in () is only low a little.The measure of the light transmittance of wavelength 550nm, 450~650nm and 380~780nm makes With the spectrophotometer (MPC-3100) of (strain) Shimadzu Seisakusho Ltd., open defect check device is used as shade filming apparatus (Takano (strain) makes, image processing apparatus:MP72000), the transmitted light observed under white light source.In addition, looking squarely observation opening 50 μm of square (50 50 μm of μ m) are shaped as during portion.Evaluation result in table is carried out based on following benchmark.In addition, for sample Product 9,10, as coloured material composition, use red iron oxide on the basis of carbon black, become following table with the absorbance of each wavelength The mode of the absorbance shown in 1 is adjusted.
(metewand of sample)
1 ... can not pass through Shadow recognition peristome.
The contrast of the light and shade of the shade of 2 ... peristomes is low, it is impossible to fully carry out the defect inspection of peristome.
The contrast of the light and shade of the shade of 3 ... peristomes can be the degree of the defect inspection that can carry out peristome, leak See that the probability of the defect of peristome is minimum.
The contrast of the light and shade of the shade of 4 ... peristomes is high, does not almost leak the probability of the defect for seeing peristome.
The contrast of the light and shade of the shade of 5 ... peristomes is high, and the defect inspection precision of peristome is high.
[table 1]
In the mode of diagram, the opening shape of peristome 25 is rectangular, for opening shape is not particularly limited, opening The opening shape in portion 25 can be the shape with curvature such as rhombus, polygon, or circle or ellipse.Additionally, with circle or Oval to wait the opening shape with curvature to compare, rectangle or polygonal opening shape can increase light-emitting area, it may be said that be The opening shape of preferred peristome 25.
For the cross sectional shape of peristome 25 is also not particularly limited, the relative end of the resin mask of peristome 25 is formed Face each other can also general parallel orientation, shown in such as Fig. 1 (b), the cross sectional shape of preferably peristome 25 is the shape expanded towards vapor deposition source Shape.In other words, preferably with the conical surface expanded towards 10 side of metal mask.For cone angle, it may be considered that resin mask 20 Thickness etc. suitably sets, and connects the upper bottom front end of the peristome of go to the bottom front end and the same resin mask of the peristome of resin mask The angle that formed of straight line and resin mask bottom surface, in other words, in the thickness of the internal face of the peristome 25 for constituting resin mask 20 Degree direction section, the face of the side that do not connect with metal mask 10 of the internal face and resin mask 20 of peristome 25 is (in the side of diagram In formula, below resin mask) in the range of the angle that formed is preferably 5 °~85 °, in the range of more preferably 15 °~75 °, In the range of more preferably 25 °~65 °.Particularly, within the range, the evaporation angle of the evaporator also preferably than using The little angle of degree.In addition, in the mode of diagram, forming the linear shape of end face of peristome 25, but this is not limited to, also may be used With become cambered outwards curved shape, the i.e. entirety of peristome 25 be shaped as it is bowl-shape.
(metal mask)
As shown in Fig. 1 (b), in a face lamination metal mask 10 of resin mask 20.Metal mask 10 is made of metal, and matches somebody with somebody It is equipped with the gap 15 extended on vertical or horizontal.Gap 15 is synonymous with opening.For the configuration example in gap is not particularly limited, Along longitudinal direction, and the gap that extends laterally can be along longitudinal direction, and landscape configuration multiple row, the gap for extending longitudinally can also be horizontal Configuration multiple row, the gap for extending transversely can also be along longitudinal direction configuration multiple rows.Alternatively, it is also possible to only configure 1 longitudinally or transversely Row.In addition, " longitudinal direction " said here, " horizontal " refer to the above-below direction of accompanying drawing, left and right directions, or length direction, The either direction of width.For example, it is also possible to the length direction of deposition mask, resin mask, metal mask is set to " vertical To ", it is also possible to width is set to into " longitudinal direction ".In addition, in present specification, to look squarely shape during observation deposition mask Shape be rectangle in case of enumerate explanation, but it is also possible to for shape in addition, such as circle, rhombus etc..In this case, Cornerwise length direction or radial direction or arbitrary direction are set to into " length direction ", side that will be vertical with " length direction " To being set to " width " (also having referred to as width).
For the material of metal mask 10 is not particularly limited, in the field of deposition mask, can suitably select to use mesh Front known material, for example, can enumerate the metal materials such as rustless steel, iron-nickel alloy, aluminium alloy.Wherein, as iron-nickel alloy Invar alloy material is few because of thermogenetic deformation, it is possible to being adapted to use.
In addition, using the deposition mask 100 of an embodiment, when the vapor deposited surface for being deposited with object is deposited with, Rear distributed magnet etc. of evaporation object, in the deposition mask 100 in the front that needs to attract evaporation object by magnetic force In the case of, metal mask 10 is formed by magnetic preferably.As the metal mask 10 of magnetic, can enumerate iron-nickel alloy, Pure iron, carbon steel, tungsten (W) steel, chromium (Cr) steel, cobalt (Co) steel, the alloy including the ferrum of cobalt-tungsten-chromium-carbon be KS steel, with ferrum-nickel- Aluminum is the MK steel of main constituent, the NKS steel of addition cobalt-titanium, Cu-Ni-Co steel, aluminum (Al)-ferrum (Fe) alloy etc. in MK steel.Separately Outward, in the case where the material itself for forming metal mask 10 is not magnetic, by making to disperse above-mentioned magnetic in the material Powder, it is also possible to give metal mask 10 with magnetic.
For the thickness of metal mask 10 is also not particularly limited, in order to more efficiently prevent from the generation of shade, preferably Less than 100 μm, more preferably less than 50 μm, particularly preferably less than 35 μm.Additionally, in the case of thinner than 5 μm, with disrumpent feelings or The risk of deformation increases, and unworkable trend.
In addition, in the mode shown in Fig. 1 (a), opening shape when looking squarely direct vision port 15 is rectangular, but for opening Shape is not particularly limited, and the opening shape in gap 15 can also be any shapes such as trapezoidal shape, circle.For resin mask The shape of 20 peristome 25 is similarly.
For the cross sectional shape in the gap 15 for being formed at metal mask 10 is also not particularly limited, but preferably such as Fig. 1 (b) institutes Show, be the shape expanded towards vapor deposition source.More specifically, the front end of going to the bottom in the gap 15 of metal mask 10, same gold are connected The straight line and the bottom surface angulation of metal mask 10 of the upper bottom front end in the gap 15 of category mask 10, in other words, is constituting gold The internal face in gap 15 and covering with resin for metal mask 10 in the thickness direction section of the internal face in the gap 15 of category mask 10 Mould 20 connect side the angle that formed of face (in the mode of diagram, below metal mask) be preferably 5 °~85 ° in the range of, more In the range of preferably 15 °~80 °, in the range of more preferably 25 °~65 °.Particularly, also preferably compare in the range of being somebody's turn to do The little angle of the deposition angles of the evaporator for using.
For the method in resin mask superimposed layer metal mask 10 is not particularly limited, you can with using various bonding agents Resin mask 20 and metal mask 10 are fitted, it is also possible to using the resin mask with autohension.Resin mask 20 and metal The size of mask 10 can be with identical, or different sizes.Additionally, it is contemplated that the fixation to framework for optionally carrying out afterwards, Make the size of resin mask 20 less than metal mask 10, when being preferably formed into the state that the outer peripheral portion of metal mask 10 exposes, The welding of metal mask 10 and framework is easy.
Hereinafter, for preferred deposition mask mode by embodiment (A), and embodiment (B) as a example by illustrate and carry out Explanation.Additionally, the deposition mask 100 of the present invention is not limited to the mode of following explanation, as long as meeting lamination is formed with gap 15 metal mask 10 and in peristome corresponding with the pattern that the position that the gap 15 overlaps is being formed with evaporation makes 25 The condition of resin mask 20, then can be any-mode.For example, the gap 15 for being formed at metal mask 10 can also be striated (not shown).Alternatively, it is also possible to arrange the gap 15 of metal mask 10 in the position integrally not overlapped with 1 picture.Either which The mode of kind, by being formed as the resin mask 20 that the light transmittance of wavelength 550nm is less than 40%, is checking resin mask 20 Peristome 25 be whether, when the evaporation pattern formed desired by the vapor deposited surface of object is deposited with, can to improve shade The contrast of light and shade, can correctly hold the edge part of the patterns of openings of peristome 25.
The deposition mask > of < embodiments (A)
As shown in Fig. 2 the deposition mask 100 of embodiment (A) is for while forming the evaporation pattern of multiple picture amounts Deposition mask, it is characterised in that a face superimposed layer of resin mask 20 is provided with the metal mask 10 in multiple gaps 15 and Into, it is provided with resin mask 20 for constituting the peristome 25 required for multiple pictures, each gap 15 is arranged at and 1 The position that picture integrally overlaps.In the deposition mask 100 of embodiment (A), the light of the wavelength 550nm of resin mask 20 is saturating It is also less than 40% to penetrate rate.
The deposition mask 100 of embodiment (A) be for and meanwhile formed multiple picture amounts evaporation pattern deposition mask, With multiple products corresponding evaporation pattern is formed simultaneously can using a deposition mask 100.Cover in the evaporation of embodiment (A) In mould, described " peristome " refers to the pattern that the deposition mask 100 of embodiment to be used (A) makes, and for example, this is being steamed In the case of the formation of the organic layer that plating mask is used for organic el display, the shape for being shaped as the organic layer of peristome 25. " 1 picture " is made up of the aggregation of peristome corresponding with product 25 in addition, is shown for organic EL in the product In the case of device, in order to form the aggregation of the organic layer required for an organic EL shows, the i.e. peristome 25 of organic layer Aggregation becomes " 1 picture ".And, with regard to the deposition mask 100 of embodiment (A), in order to form multiple picture amounts simultaneously Evaporation pattern, above-mentioned " 1 picture " is configured multiple picture amounts by the interval for separating regulation on resin mask 20.That is, cover in resin Mould 20 is provided with to constitute the peristome 25 needed for multiple pictures.
The deposition mask of embodiment (A) has following characteristics:It is provided with the one side of resin mask and is provided with multiple The metal mask 10 in gap 15, each gap is respectively arranged at the position integrally overlapped with least one 1 pictures.In other words, which is special Levy and be, constitute 1 picture needed for peristome 25 between, do not exist between the peristome 25 being laterally abutted with gap 15 Longitudinal length equal length and the metal line portions with 10 same thickness of metal mask, between longitudinally adjacent peristome 25 not Exist with the metal line portions with the lateral length equal length in gap 15 and with 10 same thickness of metal mask.Hereinafter, it is right With the metal line portions with the longitudinal length equal length in gap 15 and with 10 same thickness of metal mask and have and gap 15 lateral length equal length and the metal line portions with 10 same thickness of metal mask, sometimes total referred to as metal wire Part.
According to the deposition mask 100 of embodiment (A), the size, composition 1 in the peristome 25 that will be constituted needed for 1 picture In the case that spacing between the peristome 25 of picture is narrow and small, even if for example in order to be performed for more than the formation of the picture of 400ppi, And by the spacing between the size of peristome 25, peristome 25 formed it is atomic it is little in the case of, it is also possible to prevent metal line portions The interference for causing, can form the image of fine.Additionally, in the case where 1 picture is by the segmentation of multiple gaps, in other words, in structure Into 1 picture peristome 25 between exist with the metal line portions of 10 same thickness of metal mask in the case of, with constitute 1 Spacing between the peristome 25 of picture narrows, and the metal line portions being present between peristome 25 become to evaporation object and form steaming Obstruction during plating pattern, it is difficult to form the evaporation pattern of fine.In other words, constituting presence tool between the peristome 25 of 1 picture In the case of there are the metal line portions with 10 same thickness of metal mask, be formed as the metal wire portion during deposition mask of tape frame The generation of shade is separated, it is difficult to form the picture of fine.
Then, with reference to Fig. 2~Fig. 6, illustrate to constituting one of peristome 25 of 1 picture.Additionally, in the side of diagram In formula by dotted line close region be 1 picture.In the mode of diagram, for convenience of description, with the collection of the peristome 25 of minority Fit is 1 picture, but is not limited to which, such as, during using a peristome 25 as 1 pixel, can also deposit on 1 picture In the peristome 25 of millions of pixels.
In the mode shown in Fig. 2, by the set along the peristome 25 for being longitudinally, laterally provided with multiple peristomes 25 Body constitutes 1 picture.In the mode shown in Fig. 3, by the set of the peristome 25 for being horizontally arranged with multiple peristomes 25 Body constitutes 1 picture.In addition, in the mode shown in Fig. 4, by the peristome 25 for being vertically arranged with multiple peristomes 25 Aggregation constitutes 1 picture.And, in Fig. 2~Fig. 4, the position integrally overlapped with 1 picture is provided with gap 15.
As described above, gap 15 can also be arranged on the position for only overlapping with 1 picture, it is also possible to such as Fig. 5 (a), (b) institute Show, be arranged on the position integrally overlapped with plural picture.In Fig. 5 (a), in the resin mask 10 shown in Fig. 2, with The position that transversely continuous two pictures integrally overlap is provided with gap 15.In Fig. 5 (b), three are being longitudinally continuous with edge The position that picture integrally overlaps is provided with gap 15.
Then, as a example by the manner shown in figure 2, the spacing between the peristome 25 of 1 picture of composition, the spacing between picture are entered Row explanation.The size of spacing and peristome 25 constituting the peristome 25 of 1 picture is not particularly limited, can be according to evaporation The pattern of making suitably sets.For example, in the case of the formation of the evaporation pattern of the fine for carrying out 400ppi, constituting 1 The peristome 25 of picture, the horizontal spacing (P1) of adjacent peristome 25, longitudinal pitch (P2) are 60 μm or so.In addition, opening The size in portion is 500 μm2~1000 μm2Left and right.In addition, peristome 25 is not limited to corresponding with 1 pixel, for example can also Collect multiple pixels according to pixel arrangement and be formed as a peristome 25.
For the horizontal spacing (P3) between picture, longitudinal pitch (P4) are also not particularly limited, as shown in Fig. 2 at one In the case that gap 15 is arranged at the position integrally overlapped with 1 picture, there are metal line portions between each picture.Therefore, each Longitudinal pitch (P4) between picture, horizontal spacing (P3) are than being arranged at the longitudinal pitch (P2), laterally of peristome 25 in 1 picture The little situation of spacing (P1), or in the case of being substantially the same, the metal line portions being present between each picture easily break.Therefore, When considering this, the spacing (P1, P2) that spacing (the P3, P4) ratio preferably between picture is constituted between the peristome 25 of 1 picture is wide.As One of spacing (P3, P4) between picture, is 1mm~100mm or so.Additionally, the spacing between picture refer to 1 picture and with this Spacing between the peristome adjoined on other adjacent pictures of 1 picture.This is for the deposition mask of embodiment described later (B) Spacing between the spacing of peristome 25, picture is similarly.
Additionally, as shown in figure 5, being arranged at the situation of the position integrally overlapped with plural picture in a gap 15 Under, there are no the metal line portions of the internal face for constituting gap between the multiple pictures being arranged in a gap 15.Therefore, should In the case of, the spacing being arranged between the plural picture of the position overlapped with a gap 15 can also with constitute 1 picture Peristome 25 between spacing be substantially the same.
The deposition mask > of < embodiments (B)
Then, the deposition mask of embodiment (B) is illustrated.As shown in fig. 6, the deposition mask of embodiment (B) With following characteristics:Fold in the one side of resin mask 20 for being provided with multiple peristomes corresponding with evaporation makes pattern 25 Layer is provided with the metal mask 10 in a gap (1 through hole 16) and forms, and the plurality of peristome 25 is provided entirely in and setting In the position that a through hole of metal mask 10 overlaps.
Peristome 25 described in embodiment (B) is referred to form the opening needed for evaporation pattern on evaporation object Portion, it is also possible to be arranged on evaporation object and form evaporation pattern institute in the position not overlapped with a through hole 16 and unwanted open Oral area.Additionally, Fig. 6 be the deposition mask for observing of deposition mask that represents embodiment (B) from metal mask side just Face figure.
The deposition mask 100 of embodiment (B) is provided with one on the resin mask 20 with multiple peristomes 25 The metal mask 10 of individual through hole 16, and multiple peristomes 25 are provided entirely in the position overlapped with a through hole 16.Tool In having the deposition mask 100 of embodiment (B) of this composition, do not exist between peristome 25 thick with the thickness identical of metal mask Degree or the metal line portions thicker than the thickness of metal mask, therefore, it is described such as in the deposition mask of above-mentioned embodiment (A) It is bright, fine can not be formed by disturbing that metal line portions are caused according to the size of the peristome 25 for being arranged at resin mask 20 Evaporation pattern.
In addition, according to the deposition mask of embodiment (B), even if thickening the situation of the thickness of metal mask 10, also almost Do not affected by shade, therefore the thickness of metal mask 10 can be thickened and can fully meet durability and operability, can , while the evaporation pattern of fine is formed, to improve durability and operability.
The resin mask 20 of the deposition mask of embodiment (B) is formed from a resin, as shown in fig. 6, with a through hole 16 positions for overlapping are provided with multiple peristomes corresponding with evaporation makes pattern 25.The pattern that peristome 25 is made with evaporation Thus correspondence, the deposition material released from vapor deposition source, is formed with evaporation object and peristome 25 pairs by peristome 25 The evaporation pattern answered.Additionally, in the mode of diagram, the example for enumerating peristome row arrangement multiple row in length and breadth is illustrated, but Only can configure longitudinally or transversely.In the deposition mask 100 of embodiment (B), the light of the wavelength 550nm of resin mask 20 Absorbance is also less than 40%.
" 1 picture " of the deposition mask 100 of embodiment (B) refers to the set of peristome corresponding with product 25 Body, in the case that a product is organic el display, in order to form the collection of the organic layer needed for an organic el display Zoarium, the aggregation for becoming the peristome 25 of organic layer are " 1 picture ".The deposition mask of embodiment (B) can for only by " 1 picture " constitute, it is also possible to should " 1 picture " with multiple picture amounts configuration, in the situation that " 1 picture " is configured with multiple picture amounts Under, preferably peristome 25 is arranged at intervals with (with reference to the figure of the deposition mask of embodiment (A) with what every picture unit separated regulation 5).The mode of " 1 picture " is not particularly limited, such as when using a peristome 25 as 1 pixel, it is also possible to by millions of Individual peristome 25 constitutes 1 picture.
(metal mask)
The metal mask 10 of the deposition mask 100 of embodiment (B) is made of metal, with a through hole 16.And, In the present invention, a through hole 16 is configured in from the front of metal mask 10 position overlapped with whole peristomes 25 when observing Put, in other words, be configured in it can be seen that being configured at the position of whole peristomes 25 of resin mask 20.
Part beyond the metal part of composition metal mask 10, i.e. through hole 16 is as shown in Figure 6, you can with along evaporation The outer rim of mask 100 is arranged, it is also possible to is made the size of metal mask 10 less than resin mask 20 as shown in Figure 7, is made resin mask 20 outer peripheral portion exposes.Alternatively, it is also possible to make the size of metal mask 10 bigger than resin mask 20, one of metal part is made Divide prominent to the lateral outer side or longitudinally outboard of resin mask.Additionally, under any circumstance, the size of through hole 16 is all than tree The big of fat mask 20 is constituted slightly.
Transverse width (W1) and longitudinal direction to the metal part of the wall of the through hole of the metal mask 10 shown in formation Fig. 6 Width (W2) is not particularly limited, but with the narrowed width of W1, W2, with the trend that durability, operability are reduced.Therefore, It is preferred that W1, W2 are the width that can fully meet durability, operability.Conjunction can suitably be set according to the thickness of metal mask 10 Suitable width, but as one of preferred width as the metal mask of embodiment (A), W1, W2 be 1mm~ 100mm or so.
In addition, in the deposition mask of each embodiment of described above, being regularly formed out on resin mask 20 Oral area 25, but when observing from 10 side of metal mask of deposition mask 100, it is also possible to laterally, or longitudinal direction configure with mutually staggering Each peristome 25 (not shown).I.e., it is also possible to which laterally adjacent peristome 25 is in staggered configuration along longitudinal direction.By being configured so that, Even in the case of 20 thermal expansion of resin mask, it is also possible to absorb the expansion for throughout producing, Neng Goufang using peristome 25 Only expansion is accumulated and produces big deformation.
In addition, in the deposition mask of each embodiment of described above, it is also possible to formed along tree on resin mask 20 The groove (not shown) of the vertical or horizontal extension of fat mask 20.In the case of applying heat in evaporation, 20 thermal expansion of resin mask, Thus be possible to peristome 25 size or position produce change, but the expansion of resin mask by forming groove, can be absorbed, And can prevent from making resin mask 20 overall to from given direction in the thermal expansion accumulation for producing everywhere of resin mask Expand and the size or change in location of generation peristome 25.For the forming position of groove is not limited, it is also possible to be arranged at composition 1 The position overlapped between the peristome 25 of picture or with peristome 25, but be preferably disposed between picture.In addition, groove can be only arranged at The one side of resin mask, the face of the side that for example connects with metal mask, it is also possible to be only arranged at the face of the side that do not connect with metal mask. Or the two sides of resin mask 20 can also be arranged at.
Furthermore it is possible to be set to the groove extended longitudinally between adjacent picture, it is also possible to be formed in edge between adjacent picture The groove for extending laterally.Furthermore it is also possible to form groove in the way of they to be combined.
For groove depth and its width be not particularly limited, but in the wide feelings of the too deep situation of the depth of groove or width Under condition, due to the trend that the rigidity with resin mask 20 is reduced, it is therefore desirable to consider that the point is set.In addition, for groove Cross sectional shape be also not particularly limited, U-shaped or V-shape etc., it is considered to which processing method etc. is arbitrarily selected.For reality Apply the deposition mask of mode (B) similarly.
The manufacture method > > of < < deposition masks
Hereinafter, the manufacture method row of the deposition mask of an embodiment are illustrated as an example.The steaming of one embodiment Plating mask 100 can be obtained by following methods:Prepare to be provided with the metal mask in gap 15 in a face lamination of resin plate The metal mask of 10 resin plate, is then swashed by the irradiation of gap 15 from 10 side of metal mask to the metal mask of resin plate Light, forms peristome corresponding with the pattern of evaporation making 25 in resin plate.
As the forming method of the metal mask of resin plate, a face lamination of resin plate is provided with the metal in gap 15 Mask 10.Resin plate can use the material illustrated in above-mentioned resin mask 20.In addition, being formed as above-mentioned 1st method In the case of resin mask, contain coloured material composition in resin plate, the resin plate to the light transmittance of wavelength 550nm is Less than 40%.
As the forming method of the metal mask 10 for being provided with gap 15, by applying shielding portion on the surface of metallic plate Part, such as erosion resistant simultaneously make the position of regulation expose, develop, and ultimately form the resist that residual is formed with the position in gap 15 Pattern.Used as the anticorrosive additive material as curtain-shaped cover member, preferred process is good, the material with desired resolution.Then, will The Resist patterns is used as etch resistant mask, is etched processing by etching method.After etching terminates, removing is cleaned against corrosion Agent pattern.Thus obtain being provided with the metal mask 10 in gap 15.Etching for forming gap 15 can be from the list of metallic plate Surface side is carried out, it is also possible to carried out from two sides.In addition, being formed in metallic plate using the laminated body for being provided with resin plate on a metal plate In the case of gap 15, curtain-shaped cover member is applied on the surface of the side not connected with resin plate of metallic plate, by from one side The etching of side and form gap 15.Additionally, resin plate relative to metallic plate etching material there is elching resistant in the case of, Need not cover the surface of resin plate, but resin plate relative to metallic plate etching material there is no patience in the case of, need Curtain-shaped cover member is applied on the surface of resin plate.In addition, in above-mentioned, being said centered on anticorrosive additive material as curtain-shaped cover member It is bright, but replace applying anticorrosive additive material, it is also possible to lamination dry type resist, carry out same composition.
In the methods described above, the resin plate for constituting the metal mask of resin plate is not only the resin of tabular, it is also possible to It is the resin bed or resin film formed by coating.That is, resin plate can be cut-and-dried, using metallic plate and resin Plate shape into resin plate metal mask in the case of, it is also possible on a metal plate by currently known coating process etc. formed most Become the resin bed or resin film of resin mask eventually.For example, in the case where the resin mask of above-mentioned 1st method is formed as, adjust Make the material of the resin mask for dispersing or dissolving described above in appropriate solvent, coloured material composition, be added as needed on Arbitrary composition resin plate coating liquid, be coated on metallic plate and do by using currently known coating method It is dry, can be used as the resin plate of the resin mask 20 for being used for obtaining above-mentioned 1st method.
As the forming method of peristome 25, the metal mask to the resin plate of above-mentioned preparation, using laser processing method, Precision stamping processing, lithography process etc. make resin plate insertion, and form open corresponding with the pattern that evaporation makes on resin plate Oral area 25, thus, obtains folding in the one side of resin mask 20 for being provided with peristome corresponding with the pattern of evaporation making 25 Layer is provided with the deposition mask 100 of an embodiment of the metal mask 10 in gap 15.Additionally, from can easily form fine The aspect of peristome 25 set out, preferably use laser processing method when forming peristome 25.
In the case of the resin mask as above-mentioned 2nd method, can formed peristome 25 before on resin plate shape Into bepainting material layer 40, formed the insertion bepainting material layer 40, and resin plate peristome 25, it is also possible to form insertion resin plate Peristome 25, after obtaining resin mask 20, form bepainting material layer on the non-formation region of peristome of the resin mask 20 40。
Alternatively, it is also possible to the stage before forming peristome 25 on resin plate, the metal mask of resin plate is fixed on On framework.It is not that the deposition mask that will be completed is fixed on framework, but by the resin plate of the state to being fixed on framework Metal mask from rear arrange peristome, positional precision can be significantly improved.Additionally, solid in the deposition mask 100 that will be completed In the case of being scheduled on framework, fix with framework as the metal mask for determining opening being stretched, so opening position Put coordinate precision reduction.For framework 60, and the fixing meanss of deposition mask of resin plate be also not particularly limited, can make Method with the spot welding, bonding agent, fastened by screw fixed by laser etc. or in addition is fixed.
The deposition mask > > of < < tape frames
Then, the deposition mask of the tape frame of one embodiment of the present invention is illustrated.As shown in Fig. 9,10, this The deposition mask 200 of the tape frame of a bright embodiment is characterised by, fixes deposition mask 100 and form on framework 60, Deposition mask 100 is will to be formed with the metal mask 10 in gap 15 and be formed with the position overlapped with the gap to make with evaporation The corresponding peristome of pattern 25 20 lamination of resin mask, the light transmittance of the wavelength 550nm of resin mask 20 For less than 40%.According to the deposition mask 200 of the tape frame with this feature, High precision and lightweight both sides can met While, also can correctly carry out being formed at the peristome of resin mask 20 after deposition mask 100 is fixed on framework 60 Whether character pattern normally confirms.
The deposition mask 200 of the tape frame of one embodiment of the present invention is as shown in Figure 9, you can be on framework 60 it is solid Surely there is the mode of a deposition mask 100, it is also possible to as shown in Figure 10, be multiple deposition masks 100 to be fixed with framework 60 Mode.
(deposition mask)
The deposition mask 100 of the deposition mask 200 of composition tape frame can still use the one of the present invention of described above The deposition mask 100 of embodiment, in this detailed.Additionally, the deposition mask of an embodiment said here The deposition mask (embodiment (A), the deposition mask of embodiment (B)) of the optimal way comprising described above.
(framework)
Frame part of the framework 60 for rectangular shape, with for making to be arranged at finally by fixed deposition mask 100 Resin mask 20 peristome 25 in the evaporation through hole that exposes of source.For the material of framework is not particularly limited, can be with Using the big metal material of rigidity, such as SUS, invar alloy material, ceramic material etc..Wherein, metal framework and deposition mask Metal mask welding easily, the impact of deformation etc. it is little, therefore be preferred.
For the thickness of framework is also not particularly limited, in terms of rigidity etc., preferably 10mm~30mm or so.Frame As long as the metal of the framework and deposition mask can be covered by the width between the inner circumferential end face of the opening of frame, the peripheral end face of framework The width that mould is fixed, is just not particularly limited, for example, can illustrate the width of 10mm~50mm or so.
In addition, as shown in Figure 11 (a)~(c), it is also possible to which the resin mask 20 for constituting deposition mask 100 in without prejudice to is opened In the range of oral area 25 exposes, using the framework 60 for being provided with 65 grade of reinforced frame in the region of through hole.In other words, framework 60 The opening having can also have the structure for being reinforced the segmentations such as framework.By arranging reinforced frame 65, using the reinforced frame 65 can be with fixed frame 60 and deposition mask 100.Specifically, the deposition mask 100 by described above along longitudinal direction, and laterally When fixing multiple side by side, in the position that the reinforced frame and deposition mask overlap, it is also possible to fix deposition mask on framework 60 100。
For the fixing meanss of framework 60 and deposition mask 100 are also not particularly limited, it is possible to use solid by laser etc. Fixed spot welding, bonding agent, fastened by screw or method in addition are fixed.
< < deposition mask precursor > >
Then, the deposition mask precursor of one embodiment of the present invention is illustrated.One embodiment of the present invention Deposition mask precursor (not shown) is for obtaining to be formed with the metal mask 10 in gap 15 and in the position overlapped with the gap It is formed with the deposition mask of 20 lamination of resin mask of peristome corresponding with the pattern that evaporation makes 25 and uses, its It is characterised by, apertured metal mask is set in a face lamination of resin plate and is formed, light of the resin plate to wavelength 550nm Absorbance is less than 40%.
The deposition mask precursor of one embodiment of the present invention in addition to 25 this point of peristome is not provided with resin plate, Common with the deposition mask 100 of an embodiment of described above, specific description is omitted.Cover as the evaporation of an embodiment The specific composition of mould precursor, the metal that can enumerate the resin plate illustrated by the manufacture method of above-mentioned deposition mask are covered Mould.
According to the deposition mask precursor of an above-mentioned embodiment, opened by being formed on the resin plate of the deposition mask precursor Oral area, can be met High precision and lightweight both sides, and can correctly to being formed at the shape in resin mask open portion Whether shape pattern is normally carried out the deposition mask for confirming.
In above-mentioned, used as deposition mask precursor, the light transmittance for being set forth in wavelength 550nm is less than 40% resin plate Face lamination resin plate that apertured metal mask is set metal mask as a example by illustrate, it is also possible to will be in wavelength The light transmittance of 550nm is the tape tree of the metallic plate that a face superimposed layer of less than 40% resin plate is used for forming metal mask The metallic plate of fat plate is used as deposition mask precursor.In the deposition mask precursor, on the metallic plate of the metallic plate of resin plate Gap is formed, then, the peristome overlapped by the gap for being formed on resin plate be formed at metallic plate can be obtained above-mentioned The deposition mask of the embodiment for illustrating.
(manufacture method of organic semiconductor device)
Then, the manufacture method of the organic semiconductor device of one embodiment of the present invention is illustrated.One embodiment party The manufacture method of the organic semiconductor device of formula includes the deposition mask using the tape frame for securing deposition mask on framework, The operation of evaporation pattern is formed on evaporation object, in the operation for forming evaporation pattern, is fixed on the deposition mask of framework It is characterised by, is will to form apertured metal mask and be formed with the position overlapped with the gap to make with evaporation The resin mask stack of the corresponding peristome of pattern, in addition, the resin mask to the light transmittance of wavelength 550nm is Less than 40%.
Vapour deposition method with the deposition mask by using tape frame forms an embodiment of the operation of evaporation pattern Organic semiconductor device manufacture method with formed on substrate the electrode forming process of electrode, organic layer formation process, Opposite electrode formation process, sealant formation process etc., in each arbitrary operation, by using the deposition mask of tape frame Vapour deposition method formed on substrate evaporation pattern.For example, divide in the assorted luminescent layer formation process of R, G, B of organic el device In the case of the vapour deposition method of deposition mask of tape frame Ying Yong not have been used, the evaporation figure of assorted luminescent layer is formed with substrate Case.Additionally, the manufacture method of the organic semiconductor device of one embodiment of the present invention is not limited to these operations, it is applicable to make With the arbitrary operation of the manufacture of the currently known organic semiconductor device of vapour deposition method.
The manufacture method of the organic semiconductor device of one embodiment of the present invention is characterised by, in the above-mentioned evaporation of formation In the operation of pattern, the deposition mask for fixing the tape frame of deposition mask on the framework for being used is the present invention of described above An embodiment tape frame deposition mask 200, here omit detailed description.According to being covered using the evaporation of tape frame The manufacture method of the organic semiconductor device of mould, can form the organic semiconductor device of the pattern with fine.As logical The organic semiconductor device of the manufacture method manufacture of the organic semiconductor device of one embodiment of the present invention is crossed, example can be enumerated The such as organic layer of organic EL element, luminescent layer or cathode electrode etc..The particularly organic semiconductor of one embodiment of the present invention The manufacture method of element goes for the manufacture of R, G, B luminescent layer of the organic EL element of the pattern accuracy of requirement fine.
(inspection method of deposition mask)
Then, the inspection method of the deposition mask of an embodiment is illustrated.The deposition mask of one embodiment Inspection method is following methods:Apertured metal mask is arranged to lamination and is provided with out in the position overlapped with the gap The deposition mask irradiation visible ray of the resin mask of oral area, according to the region, impermeable in resin mask through visible ray The contrast in visible ray or the region for being difficult to transmit is crossed, the visual examination of the peristome in resin mask is configured, its feature It is the deposition mask of the deposition mask for an embodiment of described above of the irradiation for carrying out visible ray.
According to the inspection method of the deposition mask of an embodiment, because the deposition mask for the inspection method is possess ripple The light transmittance of long 550nm is the deposition mask of 40% resin mask, it is possible to improve the light and shade of captured shade Contrast, the inspection precision of the peristome for being arranged at resin mask can be improved.For deposition mask can still using upper Mode is illustrated in the deposition mask for stating an embodiment, and here omits detailed description.
For the direction of illumination of visible ray is not particularly limited, can irradiate from the metal mask side of deposition mask Light, it is also possible to from the resin mask side irradiation visible ray of deposition mask.For radiation of visible light device is not also limited, Ke Yishi When the currently known device for selecting use irradiate visible ray.For the inspection method of the deposition mask in an embodiment Used in visible ray be not particularly limited, the light containing such as composition of white light equiwavelength 550nm can be enumerated.
More than, used as the best mode of the present invention, the light transmittance to possessing wavelength 550nm is less than 40% resin The deposition mask of mask 20 and for obtaining the deposition mask precursor of the deposition mask or having used organic the half of the deposition mask The manufacture method of conductor element, the inspection method of deposition mask are illustrated, but the conduct illustrated in the 1st method as described above In the case of resin mask 20 containing coloured material composition, or the conduct illustrated in the 2nd method as described above contains and is arranged at In the case of the resin mask 20 of the bepainting material layer 40 on the non-formation region of peristome, with the resin without coloured material composition Mask or the resin mask without bepainting material layer are compared, and can reduce the light transmittance of given wavelength.Reduce light saturating Penetrate rate and be associated with the inspection precision for improving peristome, compared with existing resin mask, can be by reduction light transmittance Amount improves the inspection precision of peristome.
Therefore, the deposition mask of other embodiment is characterised by, not saturating to the light of wavelength 550nm by resin mask The restriction of rate is penetrated, and resin mask contains coloured material composition or bepainting material layer is provided with resin mask.Preferably comprising can To reduce the coloured material composition or bepainting material layer of the light transmittance of wavelength 550nm.In addition, as the band frame of described above The deposition mask of frame, the manufacture method of organic semiconductor device, the inspection method of deposition mask, can also be somebody's turn to do using possessing to have The deposition mask of the resin mask of feature.Furthermore it is also possible to before as the deposition mask for possessing the resin mask with this feature Body.

Claims (6)

1. a kind of deposition mask, which is will to form apertured metal mask and be formed with and steaming in the position overlapped with the gap The resin mask stack of the corresponding peristome of pattern that plating makes,
Wherein, the resin mask is less than 40% to the light transmittance of wavelength 550nm.
2. deposition mask as claimed in claim 1, wherein, the resin mask contains coloured material composition.
3. deposition mask as claimed in claim 1 or 2, wherein, the thickness of the resin mask is 3 μm less than 10 μ m。
4. a kind of deposition mask of tape frame, which is fixed on deposition mask on framework and forms,
Wherein, the deposition mask is will to form apertured metal mask and be formed with and steaming in the position overlapped with the gap The resin mask stack of the corresponding peristome of pattern that plating makes,
The resin mask is less than 40% to the light transmittance of wavelength 550nm.
5. a kind of deposition mask precursor, which is used for obtaining to form apertured metal mask and in the position overlapped with the gap The deposition mask of the resin mask stack of peristome corresponding with the pattern that evaporation makes is formed with,
Wherein, the face lamination in resin plate has the metal mask for being provided with gap,
The resin plate is less than 40% to the light transmittance of wavelength 550nm.
6. a kind of manufacture method of organic semiconductor device, the method include:Using the band frame for being fixed with deposition mask on framework The deposition mask of frame and evaporation object on formed evaporation pattern operation,
In the operation for forming evaporation pattern, the deposition mask lamination for being fixed on the framework has and defines gap Metal mask and the resin mask in peristome corresponding with the pattern that the position that the gap overlaps defines with evaporation makes, And, the resin mask is less than 40% to the light transmittance of wavelength 550nm.
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