JP6681605B2 - 照明器具の製造方法、および、照明器具 - Google Patents
照明器具の製造方法、および、照明器具 Download PDFInfo
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- JP6681605B2 JP6681605B2 JP2016168578A JP2016168578A JP6681605B2 JP 6681605 B2 JP6681605 B2 JP 6681605B2 JP 2016168578 A JP2016168578 A JP 2016168578A JP 2016168578 A JP2016168578 A JP 2016168578A JP 6681605 B2 JP6681605 B2 JP 6681605B2
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
- F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
- F21V9/35—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material at focal points, e.g. of refractors, lenses, reflectors or arrays of light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Optical Filters (AREA)
- Circuit Arrangement For Electric Light Sources In General (AREA)
- Planar Illumination Modules (AREA)
Description
[照明器具の構成概要]
図1は、実施の形態に係る照明器具の概要を示す図である。
つぎに照明器具100の製造方法について説明する。
B:(素子情報039、主波長451.3nm)、(素子情報076、主波長458.0nm)、合成波長454.7nm
C:(素子情報001、主波長448.3nm)、(素子情報074、主波長462.8nm)、合成波長455.6nm
D:(素子情報040、主波長451.0nm)、(素子情報075、主波長462.4nm)、合成波長456.7nm
104 波長変換部材
111 第一レーザー素子
112 第二レーザー素子
Claims (6)
- レーザー素子が発振するレーザー光に基づき前記レーザー光とは異なる波長の光を放射する波長変換部材を備える照明器具の製造方法であって、
複数の前記レーザー素子のそれぞれについて発振するレーザー光の波長を測定して主波長を特定し、
特定された主波長を示す主波長情報と、測定対象のレーザー素子を識別する素子情報とをそれぞれ関連づけて記憶し、
関連づけられた主波長情報と素子情報とに基づき、合成波長が所定の第一範囲内に収まる前記レーザー素子の組み合わせを複数の前記レーザー素子中から選出し、
選出された前記レーザー素子のレーザー光が前記波長変換部材の同一箇所に照射されるように光路を配置する
照明器具の製造方法。 - 前記波長変換部材の変換特性を測定し、
測定された変換特性を示す特性情報と、測定対象の前記波長変換部材を識別する変換部材情報とをそれぞれ関連づけて記憶し、
関連づけられた特性情報と変換部材情報とに基づき、組み合わされた前記レーザー素子に基づき前記波長変換部材から放射される光の色度が所定の第二範囲内に収まるように組み合わされた前記レーザー素子と前記波長変換部材との組み合わせを決定する
請求項1に記載の照明器具の製造方法。 - 前記第一範囲は、400nm以上、490nm以下の範囲に含まれる3nmの範囲である
請求項1または2に記載の照明器具の製造方法。 - 前記波長変換部材の変換特性は、複数の前記レーザー素子に接続される複数の導光部材により導光され、前記波長変換部材の同一箇所に照射されるレーザー光に基づき測定し、
測定された変換特性を示す特性情報と変換部材情報とに前記導光部材を示す導光部材情報とをそれぞれ関連づけて記憶し、
関連づけられた前記特性情報と前記変換部材情報と前記導光部材情報とに基づき、色度が所定の第二範囲内に収まるように、前記レーザー素子の組み合わせと前記波長変換部材と前記導光部材を決定する
請求項2に記載の照明器具の製造方法。 - レーザー素子が発振するレーザー光に基づき前記レーザー光とは異なる波長の光を放射する波長変換部材を備える照明器具であって、
440nm以上、470nm以下の範囲に含まれる3nmの範囲内に合成波長が収まる複数の前記レーザー素子と、
前記レーザー素子のレーザー光が前記波長変換部材の同一箇所に照射されるような光路を形成する複数の導光部材と
を備える照明器具。 - 複数の前記レーザー素子のうち、主波長が最長の前記レーザー素子と最短の前記レーザー素子の発振波長帯域は、相互に重複していない
請求項5に記載の照明器具。
Priority Applications (3)
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JP2016168578A JP6681605B2 (ja) | 2016-08-30 | 2016-08-30 | 照明器具の製造方法、および、照明器具 |
US15/682,706 US10240726B2 (en) | 2016-08-30 | 2017-08-22 | Luminaire and method of manufacturing luminaire |
DE102017119135.6A DE102017119135A1 (de) | 2016-08-30 | 2017-08-22 | Leuchte und Verfahren zur Herstellung einer Leuchte |
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JP2016168578A JP6681605B2 (ja) | 2016-08-30 | 2016-08-30 | 照明器具の製造方法、および、照明器具 |
Publications (2)
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JP2018037241A JP2018037241A (ja) | 2018-03-08 |
JP6681605B2 true JP6681605B2 (ja) | 2020-04-15 |
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US (1) | US10240726B2 (ja) |
JP (1) | JP6681605B2 (ja) |
DE (1) | DE102017119135A1 (ja) |
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JP4458229B2 (ja) * | 2002-08-30 | 2010-04-28 | 日亜化学工業株式会社 | 露光用半導体レーザ光源装置 |
JP2009224397A (ja) * | 2008-03-13 | 2009-10-01 | Sharp Corp | 発光装置およびこれを利用した照明装置、表示装置 |
US9611987B2 (en) * | 2008-08-05 | 2017-04-04 | The Regents Of The University Of California | White light source employing a III-nitride based laser diode pumping a phosphor |
JP5767775B2 (ja) * | 2009-07-06 | 2015-08-19 | 富士フイルム株式会社 | 内視鏡装置 |
JP2011069897A (ja) * | 2009-09-24 | 2011-04-07 | Seiko Epson Corp | 光源装置および画像表示装置 |
WO2012133632A1 (ja) * | 2011-03-30 | 2012-10-04 | オリンパス株式会社 | 光源ユニット、光変換ユニット、光源装置及び光源システム |
JP2013109928A (ja) * | 2011-11-18 | 2013-06-06 | Sharp Corp | 照明装置、車両用前照灯、およびダウンライト |
JP2014011034A (ja) | 2012-06-29 | 2014-01-20 | Harison Toshiba Lighting Corp | 固体照明装置 |
US9470886B2 (en) * | 2013-01-24 | 2016-10-18 | Texas Instruments Incorporated | Split phosphor/slit color wheel segment for color generation in solid-state illumination system |
CN105158913B (zh) * | 2013-05-13 | 2019-06-21 | 深圳光峰科技股份有限公司 | 激光光源、波长转换光源、合光光源及投影系统 |
DE102013215054A1 (de) * | 2013-07-31 | 2015-02-05 | Osram Gmbh | Beleuchtungsvorrichtung mit Leuchtstoffrad und Anregungsstrahlungsquelle |
DE102013217319A1 (de) * | 2013-08-30 | 2015-03-05 | Osram Gmbh | Beleuchtungseinrichtung |
JP2016103423A (ja) * | 2014-11-28 | 2016-06-02 | ウシオ電機株式会社 | 光源装置および照明装置 |
JP6009044B2 (ja) * | 2015-06-18 | 2016-10-19 | ウシオ電機株式会社 | レーザ光源装置 |
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- 2016-08-30 JP JP2016168578A patent/JP6681605B2/ja active Active
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- 2017-08-22 US US15/682,706 patent/US10240726B2/en active Active
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US20180058643A1 (en) | 2018-03-01 |
US10240726B2 (en) | 2019-03-26 |
DE102017119135A1 (de) | 2018-03-01 |
JP2018037241A (ja) | 2018-03-08 |
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