JP7142188B1 - 高いcriの高強度光源 - Google Patents
高いcriの高強度光源 Download PDFInfo
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- JP7142188B1 JP7142188B1 JP2022517475A JP2022517475A JP7142188B1 JP 7142188 B1 JP7142188 B1 JP 7142188B1 JP 2022517475 A JP2022517475 A JP 2022517475A JP 2022517475 A JP2022517475 A JP 2022517475A JP 7142188 B1 JP7142188 B1 JP 7142188B1
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- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2113/00—Combination of light sources
- F21Y2113/10—Combination of light sources of different colours
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/4912—Layout
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- H01L33/50—Wavelength conversion elements
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Abstract
Description
Claims (15)
- デバイス光を生成するように構成された光生成デバイスであって、前記光生成デバイスが、(i)青色の第1の光源光を生成するように構成されており、第1のレーザ光源である第1の光源と、(ii)前記青色の第1の光源光の一部を、緑色及び黄色のうちの1つ以上における波長を有する発光帯域を有する第1のルミネッセンス材料光に変換するように構成された第1のルミネッセンス材料と、(iii)前記第1のルミネッセンス材料光を光学的にフィルタリングして、光学的にフィルタリングされた第1のルミネッセンス材料光にするように構成されており、それにより、前記光学的にフィルタリングされた第1のルミネッセンス材料光が、前記第1のルミネッセンス材料光に対して赤色シフトされる、光学フィルタと、(iv)赤色の第2の光源光を生成するように構成されており、第2のレーザ光源を含む第2の光源とを含み、
前記光生成デバイスの1つ以上の動作モードにおいて、前記光生成デバイスが、前記第1の光源光、前記光学的にフィルタリングされた第1のルミネッセンス材料光、及び前記第2の光源光を含む、白色デバイス光を生成するように構成されている、光生成デバイス。 - 前記第1の光源光が、ピーク最大値λ1を有し、λ1が、470nm±10nmの範囲から選択され、前記第2の光源光が、ピーク最大値λ2を有し、λ2が、630nm±10nmの範囲から選択される、請求項1に記載の光生成デバイス。
- 前記ルミネッセンス材料が、A3B5O12:Ceを含み、Aが、Y、La、Gd、Tb及びLuのうちの1つ以上を含み、Bが、Al、Ga、In及びScのうちの1つ以上を含み、B-Oの最大10%が、Si-Nによって置換され得る、請求項1又は2に記載の光生成デバイス。
- 前記ルミネッセンス材料の少なくとも95重量%が、(Yx1-x2-x3A'x2Cex3)3(Aly1-y2B'y2)5O12を含み、x1+x2+x3=1であり、x1>0であり、x3>0であり、0<x2+x3≦0.2であり、y1+y2=1であり、0≦y2≦0.2であり、A'が、ランタニドから成る群から選択される1つ以上の元素を含み、B'が、Ga、In及びScから成る群から選択される1つ以上の元素を含み、前記光学的にフィルタリングされた第1のルミネッセンス材料光の主波長が、1~10nmの範囲から選択されるシフトで前記第1のルミネッセンス材料光に対して赤色シフトされる、請求項3に記載の光生成デバイス。
- 前記光学フィルタが、第1の波長範囲λf11~λf12nmが第1の波長平均光透過率を有し、第2の波長範囲λf21~λf22nmが第2の波長平均光透過率を有する、波長依存性光透過率を有し、前記第1の波長平均光透過率が、前記第2の波長平均光透過率よりも低く、λf11<λf12≦λf21<λf22であり、λf12及びλf21が、515nm±20nmの範囲から選択される、請求項2乃至4のいずか一項に記載の光生成デバイス。
- λf11>λ1であり、λf21<530nmであり、前記第1の波長平均光透過率が、前記第2の波長平均光透過率のせいぜい2分の1である、請求項1乃至5のいずか一項に記載の光生成デバイス。
- 前記第1の光源及びオプションの第1の光学系が、前記第1のルミネッセンス材料に前記第1の光源光の一部を照射するように構成されており、前記第1の光源光の別の部分が、前記第1のルミネッセンス材料を避けるように構成されており、
前記光生成デバイスの1つ以上の動作モードにおいて、前記光生成デバイスが、前記第1のルミネッセンス材料を避けた前記第1の光源光、前記光学的にフィルタリングされた第1のルミネッセンス材料光、及び前記第2の光源光を含む、白色デバイス光を生成するように構成されている、請求項1乃至6のいずか一項に記載の光生成デバイス。 - 前記第2の光源が、前記第1のルミネッセンス材料の下流に構成されており、前記光生成デバイスが、前記第2の光源光と前記第1のルミネッセンス材料光とを組み合わせるように構成されている、請求項1乃至7のいずか一項に記載の光生成デバイス。
- 前記第1のルミネッセンス材料が、前記第2の光源光の少なくとも一部に対して透過性であり、前記第2の光源が、前記第1のルミネッセンス材料の上流に構成されており、前記1つ以上の動作モード中に、前記第2の光源光の少なくとも一部が、前記第1のルミネッセンス材料を透過して、透過した第2の光源光を提供し、前記光生成デバイスの前記1つ以上の動作モードにおいて、前記光生成デバイスが、前記第1の光源光、前記光学的にフィルタリングされた第1のルミネッセンス材料光、及び前記透過した第2の光源光を含む、白色デバイス光を生成するように構成されている、請求項1乃至7のいずれか一項に記載の光生成デバイス。
- ルミネッセンス本体を含み、前記ルミネッセンス本体が、前記第1のルミネッセンス材料を含み、前記光生成デバイスが、複数の第1の光源を含み、前記複数の第1の光源が、前記ルミネッセンス本体に前記第1の光源光を照射するように構成される、請求項1乃至9のいずれか一項に記載の光生成デバイス。
- 前記デバイス光をビーム成形するように構成された、かつ/又は前記デバイス光を均質化するように構成された光学要素を更に備え、前記光学要素が、前記第1のルミネッセンス材料の下流に構成される、請求項1乃至10のいずれか一項に記載の光生成デバイス。
- 前記第1の光源及び前記第2の光源を制御するように構成された制御システムを更に備え、前記制御システムが、ユーザインタフェース、センサ信号及びタイマに依存して、前記デバイス光の1つ以上の光学特性を制御するように構成される、請求項1乃至11のいずれか一項に記載の光生成デバイス。
- 前記1つ以上の光学特性が、相関色温度及び演色評価数を含み、1つ以上の制御モードにおいて、前記制御システムが、前記演色評価数を85超に、前記相関色温度を3100K未満に保つように構成される、請求項12に記載の光生成デバイス。
- 前記第1のレーザ光源が、第1のレーザ光源光を生成するように構成されており、前記青色の第1の光源光が、第1のレーザ光源光であり、前記第2のレーザ光源が、第2のレーザ光源光を生成するように構成されており、前記赤色の第2の光源光が、第2のレーザ光源光であり、前記光学フィルタが、制御可能な光学フィルタであり、前記制御システムが、更に、前記制御可能な光学フィルタを制御するように構成されている、請求項12又は13に記載の光生成デバイス。
- 請求項1乃至14のいずれか一項に記載の光生成デバイスを含む照明器具。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018511386A (ja) | 2015-03-19 | 2018-04-26 | フィリップス ライティング ホールディング ビー ヴィ | バイオ色相ランプ |
JP2019533880A (ja) | 2016-10-21 | 2019-11-21 | シグニファイ ホールディング ビー ヴィSignify Holding B.V. | 同様のオフ状態外観を有する複数の異なる光源を備える照明デバイス |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE398836T1 (de) | 2004-11-18 | 2008-07-15 | Koninkl Philips Electronics Nv | Lichtemittierende vorrichtung mit umwandlungsstruktur |
EP2052589A4 (en) * | 2006-04-18 | 2012-09-19 | Cree Inc | LIGHTING DEVICE AND METHOD |
US7821194B2 (en) * | 2006-04-18 | 2010-10-26 | Cree, Inc. | Solid state lighting devices including light mixtures |
DE102008012316B4 (de) * | 2007-09-28 | 2023-02-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlichtquelle mit einer Primärstrahlungsquelle und einem Lumineszenzkonversionselement |
CN102356479A (zh) * | 2009-03-19 | 2012-02-15 | 皇家飞利浦电子股份有限公司 | 具有远端发光材料的照明设备 |
TWI448806B (zh) * | 2011-09-22 | 2014-08-11 | Delta Electronics Inc | 螢光劑裝置及其所適用之光源系統及投影設備 |
DE102012211837A1 (de) * | 2012-07-06 | 2014-01-09 | Osram Gmbh | Beleuchtungsvorrichtung mit Leuchstoffanordnung und Laser |
JP2015041633A (ja) * | 2013-08-20 | 2015-03-02 | 船井電機株式会社 | 食品用照明装置および精肉用照明装置 |
WO2016037773A2 (en) | 2014-09-11 | 2016-03-17 | Philips Lighting Holding B.V. | Pc-led module with enhanced white rendering and conversion efficiency. |
EP3213355B1 (en) * | 2014-10-31 | 2020-01-29 | Lumileds Holding B.V. | Phosphor converted led with temperature stable flux and saturated red color point |
CN107251244B (zh) * | 2015-02-23 | 2019-12-03 | 亮锐控股有限公司 | 具有相对于温度稳定的通量输出的白色磷光体转换led |
US10879673B2 (en) | 2015-08-19 | 2020-12-29 | Soraa Laser Diode, Inc. | Integrated white light source using a laser diode and a phosphor in a surface mount device package |
ES2868300T3 (es) * | 2015-09-01 | 2021-10-21 | Signify Holding Bv | Sistema de iluminación de carne con eficiencia mejorada y sobresaturación roja |
CN108368975B (zh) * | 2015-12-11 | 2021-05-11 | 昕诺飞控股有限公司 | 堆叠式发光聚光器 |
WO2018141625A1 (en) | 2017-02-03 | 2018-08-09 | Philips Lighting Holding B.V. | Light concentrator module |
JP7107319B2 (ja) * | 2017-08-17 | 2022-07-27 | ソニーグループ株式会社 | 光源装置および投射型表示装置 |
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