JP6680161B2 - スイッチング素子の製造方法 - Google Patents
スイッチング素子の製造方法 Download PDFInfo
- Publication number
- JP6680161B2 JP6680161B2 JP2016181959A JP2016181959A JP6680161B2 JP 6680161 B2 JP6680161 B2 JP 6680161B2 JP 2016181959 A JP2016181959 A JP 2016181959A JP 2016181959 A JP2016181959 A JP 2016181959A JP 6680161 B2 JP6680161 B2 JP 6680161B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- gate insulating
- switching element
- nitride semiconductor
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 65
- 150000004767 nitrides Chemical class 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 17
- 239000010410 layer Substances 0.000 description 82
- 238000005530 etching Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
12 :半導体基板
20 :ドレイン領域
22 :ドリフト領域
24 :ボディ層
25a :下側チャネル部
25b :上側チャネル部
26 :ソース領域
30 :ゲート電極
32 :ゲート絶縁膜
34 :ゲート配線
40 :層間絶縁膜
42 :ソース電極
50 :ドレイン電極
Claims (1)
- スイッチング素子の製造方法であって、
窒化物半導体基板上にn型窒化物半導体層を堆積する工程と、
前記n型窒化物半導体層上に第1p型窒化物半導体層を堆積する工程と、
前記第1p型窒化物半導体層上に第1ゲート絶縁膜を堆積する工程と、
前記第1ゲート絶縁膜上にゲート電極を堆積する工程と、
前記ゲート電極上に第2ゲート絶縁膜を堆積する工程と、
前記第2ゲート絶縁膜上に第2p型窒化物半導体層を堆積する工程と、
前記第1ゲート絶縁膜と前記第1p型窒化物半導体層の界面、及び、前記第2ゲート絶縁膜と前記第2p型窒化物半導体層の界面に隣接するn型のソース領域を形成する工程、
を有する製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016181959A JP6680161B2 (ja) | 2016-09-16 | 2016-09-16 | スイッチング素子の製造方法 |
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---|---|---|---|
JP2016181959A JP6680161B2 (ja) | 2016-09-16 | 2016-09-16 | スイッチング素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018046248A JP2018046248A (ja) | 2018-03-22 |
JP6680161B2 true JP6680161B2 (ja) | 2020-04-15 |
Family
ID=61695166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016181959A Active JP6680161B2 (ja) | 2016-09-16 | 2016-09-16 | スイッチング素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6680161B2 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3550019B2 (ja) * | 1997-03-17 | 2004-08-04 | 株式会社東芝 | 半導体装置 |
JP4783975B2 (ja) * | 2000-11-21 | 2011-09-28 | 富士電機株式会社 | Mis半導体装置およびその製造方法 |
JP4974454B2 (ja) * | 2004-11-15 | 2012-07-11 | 株式会社豊田中央研究所 | 半導体装置 |
JP2008053312A (ja) * | 2006-08-22 | 2008-03-06 | Toyota Motor Corp | 半導体装置 |
JP2008103636A (ja) * | 2006-10-20 | 2008-05-01 | Sumitomo Electric Ind Ltd | 縦型トランジスタ、および縦型トランジスタを作製する方法 |
KR101920717B1 (ko) * | 2013-01-14 | 2018-11-21 | 삼성전자주식회사 | 이중 병렬 채널 구조를 갖는 반도체 소자 및 상기 반도체 소자의 제조 방법 |
-
2016
- 2016-09-16 JP JP2016181959A patent/JP6680161B2/ja active Active
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JP2018046248A (ja) | 2018-03-22 |
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