JP6676020B2 - プラズマ処理装置及びプラズマ処理装置状態予測方法 - Google Patents

プラズマ処理装置及びプラズマ処理装置状態予測方法 Download PDF

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JP6676020B2
JP6676020B2 JP2017179668A JP2017179668A JP6676020B2 JP 6676020 B2 JP6676020 B2 JP 6676020B2 JP 2017179668 A JP2017179668 A JP 2017179668A JP 2017179668 A JP2017179668 A JP 2017179668A JP 6676020 B2 JP6676020 B2 JP 6676020B2
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plasma processing
processing apparatus
data
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JP2019057548A (ja
JP2019057548A5 (enExample
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義人 釜地
義人 釜地
角屋　誠浩
誠浩 角屋
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Hitachi High Tech Corp
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Priority to KR1020170180656A priority patent/KR102033438B1/ko
Priority to TW107103197A priority patent/TWI683333B/zh
Priority to US15/904,917 priority patent/US10886110B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • G06N20/10—Machine learning using kernel methods, e.g. support vector machines [SVM]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
    • G06N3/048—Activation functions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N7/00—Computing arrangements based on specific mathematical models
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
    • G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
    • G05B13/04—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H01J2237/1825—Evacuating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H13/00—Magnetic resonance accelerators; Cyclotrons
    • H05H13/005—Cyclotrons

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  • Software Systems (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
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  • Biomedical Technology (AREA)
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  • Probability & Statistics with Applications (AREA)
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  • Bioinformatics & Computational Biology (AREA)
  • Operations Research (AREA)
  • Evolutionary Biology (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2017179668A 2017-09-20 2017-09-20 プラズマ処理装置及びプラズマ処理装置状態予測方法 Active JP6676020B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017179668A JP6676020B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置及びプラズマ処理装置状態予測方法
KR1020170180656A KR102033438B1 (ko) 2017-09-20 2017-12-27 플라즈마 처리 장치 및 플라즈마 처리 장치 상태 예측 방법
TW107103197A TWI683333B (zh) 2017-09-20 2018-01-30 電漿處理裝置及電漿處理裝置狀態預測方法
US15/904,917 US10886110B2 (en) 2017-09-20 2018-02-26 Plasma processing apparatus and prediction method of the condition of plasma processing apparatus
US17/108,383 US12080529B2 (en) 2017-09-20 2020-12-01 Plasma processing apparatus and prediction method of the condition of plasma processing apparatus

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JP2017179668A JP6676020B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置及びプラズマ処理装置状態予測方法

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JP2019057548A5 JP2019057548A5 (enExample) 2019-06-27
JP6676020B2 true JP6676020B2 (ja) 2020-04-08

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KR102103143B1 (ko) * 2018-03-14 2020-04-22 (주)아이티공간 구동부의 정밀 예지 보전방법
JP6990634B2 (ja) * 2018-08-21 2022-02-03 株式会社日立ハイテク 状態予測装置及び半導体製造装置
US20210358785A1 (en) * 2020-05-12 2021-11-18 Advanced Energy Industries, Inc. Event monitoring and characterization
JP7437262B2 (ja) * 2020-07-31 2024-02-22 株式会社日立ハイテク 荷電粒子線装置および電気ノイズの計測方法
JP7677730B2 (ja) * 2020-09-09 2025-05-15 東京エレクトロン株式会社 解析装置、解析方法、解析プログラム及びプラズマ処理制御システム
KR102252144B1 (ko) * 2021-03-31 2021-05-17 (주)알티엠 플라즈마의 동작을 확인하는 전자 장치 및 그 동작 방법
KR102797798B1 (ko) 2021-07-13 2025-04-22 주식회사 히타치하이테크 진단 장치 및 진단 방법 그리고 플라스마 처리 장치 및 반도체 장치 제조 시스템
KR102584646B1 (ko) * 2021-08-17 2023-10-04 명지대학교 산학협력단 장비 데이터를 이용하는 플라즈마 공정 진단 시스템 및 방법
CN113762475B (zh) * 2021-08-27 2023-08-15 核工业西南物理研究院 一种等离子体破裂预测器的预测依据可视化方法
WO2023181265A1 (ja) * 2022-03-24 2023-09-28 株式会社日立ハイテク 装置診断システム、装置診断装置、半導体装置製造システムおよび装置診断方法
CN116230576B (zh) * 2023-05-08 2023-07-07 粤芯半导体技术股份有限公司 快速建立暗场缺陷扫描检测体系的方法
CN119361407A (zh) * 2023-10-23 2025-01-24 芯恩（青岛）集成电路有限公司 等离子刻蚀腔的加工时间预测方法、系统及维护方法

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KR102033438B1 (ko) 2019-10-17
US20190088455A1 (en) 2019-03-21
US10886110B2 (en) 2021-01-05
JP2019057548A (ja) 2019-04-11
TWI683333B (zh) 2020-01-21
KR20190032980A (ko) 2019-03-28
US20210082673A1 (en) 2021-03-18
US12080529B2 (en) 2024-09-03
TW201916087A (zh) 2019-04-16

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