TWI683333B - 電漿處理裝置及電漿處理裝置狀態預測方法 - Google Patents

電漿處理裝置及電漿處理裝置狀態預測方法 Download PDF

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TWI683333B
TWI683333B TW107103197A TW107103197A TWI683333B TW I683333 B TWI683333 B TW I683333B TW 107103197 A TW107103197 A TW 107103197A TW 107103197 A TW107103197 A TW 107103197A TW I683333 B TWI683333 B TW I683333B
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plasma processing
data
time
index value
algorithm
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TW107103197A
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TW201916087A (zh
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釜地義人
角屋誠浩
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日商日立全球先端科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • G06N20/10—Machine learning using kernel methods, e.g. support vector machines [SVM]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
    • G06N3/048—Activation functions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N7/00—Computing arrangements based on specific mathematical models
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
    • G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
    • G05B13/04—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H01J2237/1825—Evacuating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H13/00—Magnetic resonance accelerators; Cyclotrons
    • H05H13/005—Cyclotrons

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Data Mining & Analysis (AREA)
  • Software Systems (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Computing Systems (AREA)
  • Artificial Intelligence (AREA)
  • Pure & Applied Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Mathematical Analysis (AREA)
  • Computational Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Algebra (AREA)
  • Medical Informatics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Molecular Biology (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Computational Linguistics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Evolutionary Biology (AREA)
  • Operations Research (AREA)
  • Probability & Statistics with Applications (AREA)
  • Databases & Information Systems (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW107103197A 2017-09-20 2018-01-30 電漿處理裝置及電漿處理裝置狀態預測方法 TWI683333B (zh)

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JP2017179668A JP6676020B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置及びプラズマ処理装置状態予測方法
JP2017-179668 2017-09-20

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TW201916087A TW201916087A (zh) 2019-04-16
TWI683333B true TWI683333B (zh) 2020-01-21

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US (2) US10886110B2 (enExample)
JP (1) JP6676020B2 (enExample)
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JP6990634B2 (ja) * 2018-08-21 2022-02-03 株式会社日立ハイテク 状態予測装置及び半導体製造装置
US20210358785A1 (en) * 2020-05-12 2021-11-18 Advanced Energy Industries, Inc. Event monitoring and characterization
JP7437262B2 (ja) * 2020-07-31 2024-02-22 株式会社日立ハイテク 荷電粒子線装置および電気ノイズの計測方法
JP7677730B2 (ja) * 2020-09-09 2025-05-15 東京エレクトロン株式会社 解析装置、解析方法、解析プログラム及びプラズマ処理制御システム
KR102252144B1 (ko) * 2021-03-31 2021-05-17 (주)알티엠 플라즈마의 동작을 확인하는 전자 장치 및 그 동작 방법
WO2023286142A1 (ja) 2021-07-13 2023-01-19 株式会社日立ハイテク 診断装置及び診断方法並びにプラズマ処理装置及び半導体装置製造システム
KR102584646B1 (ko) * 2021-08-17 2023-10-04 명지대학교 산학협력단 장비 데이터를 이용하는 플라즈마 공정 진단 시스템 및 방법
CN113762475B (zh) * 2021-08-27 2023-08-15 核工业西南物理研究院 一种等离子体破裂预测器的预测依据可视化方法
US12530023B2 (en) * 2022-03-24 2026-01-20 Hitachi High-Tech Corporation Apparatus diagnostic system, apparatus diagnostic apparatus, semiconductor device manufacturing system, and apparatus diagnostic method
CN116230576B (zh) * 2023-05-08 2023-07-07 粤芯半导体技术股份有限公司 快速建立暗场缺陷扫描检测体系的方法
CN119361407B (zh) * 2023-10-23 2026-02-17 芯恩（青岛）集成电路有限公司 等离子刻蚀腔的加工时间预测方法、系统及维护方法

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TW200832217A (en) * 2006-09-28 2008-08-01 Lam Res Corp Targeted data collection architecture
US20110209827A1 (en) * 2010-02-26 2011-09-01 Tokyo Electron Limited Automatic matching unit and plasma processing apparatus
JP2017162713A (ja) * 2016-03-10 2017-09-14 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法

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US12080529B2 (en) 2024-09-03
US20210082673A1 (en) 2021-03-18
US10886110B2 (en) 2021-01-05
JP6676020B2 (ja) 2020-04-08
KR20190032980A (ko) 2019-03-28
JP2019057548A (ja) 2019-04-11
KR102033438B1 (ko) 2019-10-17
US20190088455A1 (en) 2019-03-21
TW201916087A (zh) 2019-04-16

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