JP6674898B2 - パルスレーザ堆積による材料堆積装置及びその装置を用いた材料堆積方法 - Google Patents

パルスレーザ堆積による材料堆積装置及びその装置を用いた材料堆積方法 Download PDF

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JP6674898B2
JP6674898B2 JP2016552500A JP2016552500A JP6674898B2 JP 6674898 B2 JP6674898 B2 JP 6674898B2 JP 2016552500 A JP2016552500 A JP 2016552500A JP 2016552500 A JP2016552500 A JP 2016552500A JP 6674898 B2 JP6674898 B2 JP 6674898B2
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substrate
target
laser
deposition
holder
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JP2017512252A5 (enExample
JP2017512252A (ja
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ヤン・マテイン・デッケルス
ヤン・アルナウト・ヤンセンス
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SOLMATES BV
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3485Sputtering using pulsed power to the target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225Oblique incidence of vaporised material on substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3423Shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
JP2016552500A 2014-02-21 2015-02-18 パルスレーザ堆積による材料堆積装置及びその装置を用いた材料堆積方法 Active JP6674898B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14156256.1A EP2910664B1 (en) 2014-02-21 2014-02-21 Device for depositing a material by pulsed laser deposition and a method for depositing a material with the device
EP14156256.1 2014-02-21
PCT/EP2015/053356 WO2015124589A1 (en) 2014-02-21 2015-02-18 Device for depositing a material by pulsed laser deposition and a method for depositing a material with the device

Publications (3)

Publication Number Publication Date
JP2017512252A JP2017512252A (ja) 2017-05-18
JP2017512252A5 JP2017512252A5 (enExample) 2018-03-29
JP6674898B2 true JP6674898B2 (ja) 2020-04-01

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JP2016552500A Active JP6674898B2 (ja) 2014-02-21 2015-02-18 パルスレーザ堆積による材料堆積装置及びその装置を用いた材料堆積方法

Country Status (6)

Country Link
EP (1) EP2910664B1 (enExample)
JP (1) JP6674898B2 (enExample)
KR (1) KR102321884B1 (enExample)
CN (1) CN106029942B (enExample)
TW (1) TWI696717B (enExample)
WO (1) WO2015124589A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105803404A (zh) * 2016-03-25 2016-07-27 武汉华星光电技术有限公司 薄膜沉积组件及薄膜沉积装置
EP3540090A1 (en) * 2018-03-12 2019-09-18 Solmates B.V. Method for pulsed laser deposition
WO2019185187A1 (en) * 2018-03-28 2019-10-03 Applied Materials, Inc. Method for vacuum processing of a substrate, and apparatus for vacuum processing of a substrate
EP3916122A1 (en) * 2020-05-28 2021-12-01 Solmates B.V. Method for controlling stress in a substrate during laser deposition
CN117626192A (zh) * 2022-08-10 2024-03-01 中国科学院上海硅酸盐研究所 一种薄膜沉积装置和薄膜沉积方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3914476C1 (enExample) * 1989-05-02 1990-06-21 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
US6063455A (en) * 1995-10-09 2000-05-16 Institute For Advanced Engineering Apparatus for manufacturing diamond film having a large area and method thereof
KR100222580B1 (ko) * 1995-12-28 1999-10-01 김덕중 대면적 다이아몬드 박막의 고속증착 제조장치 및 그 제조방법
US6090207A (en) * 1998-04-02 2000-07-18 Neocera, Inc. Translational target assembly for thin film deposition system
AUPR026100A0 (en) * 2000-09-20 2000-10-12 Tamanyan, Astghik Deposition of thin films by laser ablation
US7879410B2 (en) * 2004-06-09 2011-02-01 Imra America, Inc. Method of fabricating an electrochemical device using ultrafast pulsed laser deposition
FI20050216A0 (fi) * 2005-02-23 2005-02-23 Ruuttu Jari Menetelmä valmistaa timanttia, muita jalokiviä, kuten safiiria, rubiinia jne. ja suorittaa näillä pinnoituksia sekä suorittaa pinnoituksia muilla aineilla, kuten boriideillä, oksideillä, nitrideillä jne.
KR101395513B1 (ko) * 2006-02-23 2014-05-15 피코데온 리미티드 오와이 플라스틱 기재 상의 코팅 및 코팅된 플라스틱 제품
ATE537277T1 (de) * 2008-08-25 2011-12-15 Solmates Bv Verfahren zur abscheidung eines materials
KR101219225B1 (ko) * 2010-07-15 2013-01-18 국립대학법인 울산과학기술대학교 산학협력단 펄스 레이저 증착장치
TWI433948B (zh) * 2012-01-31 2014-04-11 Univ Nat Chi Nan A radio frequency plasma assisted pulsed laser deposition system and a method for preparing a thin film from its system

Also Published As

Publication number Publication date
CN106029942B (zh) 2019-05-28
KR102321884B1 (ko) 2021-11-04
KR20160124103A (ko) 2016-10-26
TW201533254A (zh) 2015-09-01
EP2910664B1 (en) 2019-04-03
CN106029942A (zh) 2016-10-12
TWI696717B (zh) 2020-06-21
WO2015124589A1 (en) 2015-08-27
EP2910664A1 (en) 2015-08-26
JP2017512252A (ja) 2017-05-18

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