Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3485—Sputtering using pulsed power to the target
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/24—Vacuum evaporation
  • C23C14/28—Vacuum evaporation by wave energy or particle radiation
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/225—Oblique incidence of vaporised material on substrate
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/50—Substrate holders
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/54—Controlling or regulating the coating process
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/3414—Targets
  • H01J37/3423—Shape
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

• the invention relates to a device for depositing a material by pulsed laser deposition and a method for depositing a material with the device.
• a target material is irradiated by a laser in a vacuum chamber. Due to the
• a plasma plume of material is created, with its central axis perpendicular to the position of incidence on the target. This plasma plume of material is directed at a
• a device for depositing a material by pulsed laser deposition comprising:
• the substrate - at least one substrate holder with a substrate, arranged inside the vacuum chamber, the substrate having a first, second and third direction, each of the three directions perpendicular to each other, wherein the substrate is movable by the substrate holder in the first direction; - a target holder with a target, arranged inside the vacuum chamber and wherein the target extends over substantially the full length in the second direction of the substrate and parallel to the substrate;
• controller for controlling the movement of the substrate holder and the movement of the position of incidence of the laser on the target.
• the substrate is translated by the movement of the substrate holder in the first direction while, at the same time, the movement of the plasma plume in the second direction perpendicular to the first direction of the plasma plume over the surface creates a layer of target material on the substrate .
• the plasma plume consists of a distribution of particles
• the speed of the movement of the plasma plume over the substrate in the second direction is generally larger than the speed of the movement of the substrate in its holder, the movement of the substrate and the position of incidence will generally result in a homogeneous layer of target material on the substrate.
• the control of the position of incidence of the laser on the target may be varied both by moving the laser in the second direction and/or tilting the laser.
• the composition of the target may be homogeneous in order to deposit a layer of one target material, but may as well be inhomogeneous if deposition of different materials in one step on top of each other is desired.
• the device may also comprise more than one target, of which the composition may vary per target and/or within the target.
• Multiple lasers may be used or and/or one laser may be split in various beams. In this way, multiple points of incidence are created on the surface of the target.
• the length of the target in the second direction may for instance be distributed in segments and each of the laser beams will cover at least one segment in the creation of a plasma plume. In that way the amount of target material excited simultaneously may increase and the deposition may take place at a higher rate.
• one or more individual points of incidence may be created on the surface of the target which does not
• the first direction may be chosen from the length or width direction of the substrate and the second direction will accordingly be the other direction of the length or width.
• the movement of the position of incidence of the laser is linearly linked to the movement of the substrate holder .
• the link between the movement of the position of incidence and the movement of the substrate ensures that the path of the plasma plume over the surface of the substrate will be linear.
• a non-linear relationship could cause differences in layer thickness over the surface of the substrate which could, in some applications, be a disadvantage. In other applications, differences in layer thickness could however be an advantage.
• the controller resets the position of incidence of the laser, when viewed in the direction of movement, to the closest edge of the substrate upon arriving at the distal edge of the substrate.
• the closest edge of the substrate is the edge, where the generated plasma plume starts with depositing particles on the substrate, while the distal edge of the substrate is the edge, where the path of the plasma plume ends.
• a large area of the substrate may be deposited with target material in a continuous process.
• each of the laser beams may only have to reset along the segment of that laser beam.
• the device further comprises
• blocking means for blocking deposition of the plasma plume on the substrate during resetting of the position of incidence of the laser on the target.
• the position of incidence reaches the position at which the plume reaches the distal edge of the substrate, the position needs to be reset such that the plume continues at the closest edge.
• the resetting movement causes a
• blocking means may for instance comprise a shield, arranged between the target and the substrate or between the laser source and the target or the device may comprise a second substrate, which is deposited with target material during the resetting procedure.
• the blocking means may also comprise optical means, such as mirrors or prisms or may also comprise other means to block the laser during the resetting movement.
• the blocking means may also comprise means to turn off the laser during the resetting movement.
• the position of incidence of the laser on the target is also movable in the first direction along the surface of the target .
• the laser may hit different areas of the target. Due to a possible difference in composition of the target, this allows different areas of the target to be deposited on the substrate.
• the target is at least partially curved, preferably cylindrical, over the full length in the second direction of the substrate.
• the angle of the resulting plasma plume with respect to the substrate will vary.
• the distance to be travelled by the particles before reaching the substrate changes. Since the particles in the plasma plume will slow down during the trajectory between the target and the substrate, variation of the position of incidence along the curvature of the target allows tuning of the kinetics, e.g. particle velocity, of the particles when they reach the substrate.
• the target Since the position of incidence will also vary in the second direction along the surface of the target in order to deposit the target material on a large surface area of the substrate, it is preferred that the target has a constant cross- section in the direction parallel to the second direction of the substrate .
• the target is a cylindrical rod.
• a cylindrical rod has a constant cross-section and can be manufactured relatively easy.
• the target is rotatable around its axis parallel to the second direction of the substrate.
• the rotation of the cylindrical rod around the axis allows constant and even ablation of material from the target along its curvature, such that the target will keep its
• Non-constant ablation could lead to unpredictable changes in the curvature of the surface of the target over time, thereby changing the plasma plume angle, whereas rotation of the target prevents such changes, or at least makes these changes more predictable.
• the length in the second direction of the substrate is at least 20 centimeters.
• the device according to the invention allows the coating of relatively large surface areas, especially for substrates having a length in the second direction of at least 20
• the length is at least 30 centimeters. More preferentially, the length is at least 50 centimeters .
• the substrate comprises a glass layer provided with a layer of electroluminescent material.
• At least the deposition of the top layer of the layered structure can be built by a device according to the invention. If a relatively large substrate area is chosen, for instance with a second direction of at least 50 centimeters, the device allows the manufacture of large surface area displays.
• the object of the invention is further achieved with a method for depositing a material by pulsed laser deposition with a device according to the invention, the method comprising the repetitive steps of: - moving the substrate in the first direction at a constant speed;
• the method will generally result in a homogeneous layer of target material on the substrate.
• the thickness of the layered structure By varying the pattern of deposition of the plasma plume over the surface, it is also possible to vary the thickness of the layered structure if required. This may also be achieved by at least temporarily making the movement of the substrate in the first direction non-linear to the movement of the point of incidence in the second direction.
• the use of the device according to the invention may for instance be an advantage in the production of various structures, and especially large surface organic light emitting displays (OLEDs) or TFTs.
• OLEDs also encompasses transparent OLEDs or top-emitting OLEDs.
• An OLED comprises a substrate, preferably made of glass, on which two conducting layers are deposited with an emissive electroluminescent layer between those layers. OLEDs are built in layers and the deposition of the second conducting layer on top of the emissive electroluminescent layer may damage the latter, thereby increasing the chance of malfunction of the resulting device, e.g. due to leakage current or short
• At least the deposition of the top layer of the layered structure can be built by a device
• the device allows the manufacture of large surface area displays.
• the device can be used to apply a high-mobility material such as IGZO (indium gallium zinc oxide), ZTO (zinc tin oxide) or ZnON (zinc oxynitride) .
• IGZO indium gallium zinc oxide
• ZTO zinc tin oxide
• ZnON zinc oxynitride
• the controller may comprise means for controlling one or more substrate holders, one or more target holders, laser (s) and which may be programmed to execute an automated deposition program.
• Figure 1 shows a schematic view of an embodiment of the device according to the invention.
• Figure 2A and 2B show a top view of an embodiment of the device according to the invention with a variation of the position of incidence along the curvature of the target.
• Figure 3 shows a deposition pattern on a substrate according to the invention.
• a device 1 comprising a laser 2, a target 3 in the shape of a cylindrical rod and a substrate 4.
• a plasma plume 5 of particles with a center 6 is created directed at the substrate 4.
• the substrate 4 is at least movable in the first direction A, whereas the position of incidence 7 of the laser on the target 3 may be changed in the second direction B.
• the substrate 4 may additionally be rotated around its axis 8 in direction C.
• FIG. 2A The movement of the position of incidence 7 of the laser 2 on the target 3 is shown in figures 2A and 2B.
• the position of incidence 7 of the laser 2 is chosen such that the resulting plasma plume 5, perpendicular to the tangent 9a of the surface of the target 3 will have a relatively short
• Figure 3 shows a pattern of the movement of the center 6 of the plasma plume 5 on a part of the surface of the substrate 4 in an enlarged view for clarity reasons.
• the plasma plume 5 is moved repetitively between a first edge 11 towards a second edge 12 in a trajectory 13 while moving the substrate 4 in a first direction A.
• deposition from the plasma plume 5 takes place on the substrate 4, whereas on the return path 13b, shown in dashed lines, deposition on the substrate 4 will be inhibited. Since the movement of the substrate 4 is constant, the time and distance between subsequent passages 14a, b,c of the plasma plume 5 will be both the same in the second direction B and the first

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Organic Chemistry (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Health & Medical Sciences (AREA)
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• Physics & Mathematics (AREA)
• Plasma & Fusion (AREA)
• Analytical Chemistry (AREA)
• Manufacturing & Machinery (AREA)
• Physical Vapour Deposition (AREA)
• Electroluminescent Light Sources (AREA)

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• 2014
  • 2014-02-21 EP EP14156256.1A patent/EP2910664B1/en active Active
• 2015
  • 2015-02-18 KR KR1020167022366A patent/KR102321884B1/ko active Active
  • 2015-02-18 WO PCT/EP2015/053356 patent/WO2015124589A1/en not_active Ceased
  • 2015-02-18 CN CN201580009380.8A patent/CN106029942B/zh active Active
  • 2015-02-18 JP JP2016552500A patent/JP6674898B2/ja active Active
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