TWI696717B - 用於以脈衝雷射沉積沉積材料之裝置及以該裝置沉積材料之方法 - Google Patents

用於以脈衝雷射沉積沉積材料之裝置及以該裝置沉積材料之方法 Download PDF

Info

Publication number
TWI696717B
TWI696717B TW104105898A TW104105898A TWI696717B TW I696717 B TWI696717 B TW I696717B TW 104105898 A TW104105898 A TW 104105898A TW 104105898 A TW104105898 A TW 104105898A TW I696717 B TWI696717 B TW I696717B
Authority
TW
Taiwan
Prior art keywords
substrate
target
laser
incident position
movement
Prior art date
Application number
TW104105898A
Other languages
English (en)
Chinese (zh)
Other versions
TW201533254A (zh
Inventor
詹 馬帝京 德克斯
詹 阿籃德 詹納斯
Original Assignee
荷蘭商索麥茲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荷蘭商索麥茲公司 filed Critical 荷蘭商索麥茲公司
Publication of TW201533254A publication Critical patent/TW201533254A/zh
Application granted granted Critical
Publication of TWI696717B publication Critical patent/TWI696717B/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
TW104105898A 2014-02-21 2015-02-24 用於以脈衝雷射沉積沉積材料之裝置及以該裝置沉積材料之方法 TWI696717B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14156256.1A EP2910664B1 (en) 2014-02-21 2014-02-21 Device for depositing a material by pulsed laser deposition and a method for depositing a material with the device
EP14156256.1 2014-02-21

Publications (2)

Publication Number Publication Date
TW201533254A TW201533254A (zh) 2015-09-01
TWI696717B true TWI696717B (zh) 2020-06-21

Family

ID=50159093

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104105898A TWI696717B (zh) 2014-02-21 2015-02-24 用於以脈衝雷射沉積沉積材料之裝置及以該裝置沉積材料之方法

Country Status (6)

Country Link
EP (1) EP2910664B1 (enExample)
JP (1) JP6674898B2 (enExample)
KR (1) KR102321884B1 (enExample)
CN (1) CN106029942B (enExample)
TW (1) TWI696717B (enExample)
WO (1) WO2015124589A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105803404A (zh) * 2016-03-25 2016-07-27 武汉华星光电技术有限公司 薄膜沉积组件及薄膜沉积装置
EP3540090A1 (en) * 2018-03-12 2019-09-18 Solmates B.V. Method for pulsed laser deposition
WO2019185187A1 (en) * 2018-03-28 2019-10-03 Applied Materials, Inc. Method for vacuum processing of a substrate, and apparatus for vacuum processing of a substrate
EP3916122A1 (en) * 2020-05-28 2021-12-01 Solmates B.V. Method for controlling stress in a substrate during laser deposition
CN117626192A (zh) * 2022-08-10 2024-03-01 中国科学院上海硅酸盐研究所 一种薄膜沉积装置和薄膜沉积方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090207A (en) * 1998-04-02 2000-07-18 Neocera, Inc. Translational target assembly for thin film deposition system
US20110236601A1 (en) * 2008-08-25 2011-09-29 Solmates B.V. Method for Depositing a Material
US20120003395A1 (en) * 2004-06-09 2012-01-05 Imra America, Inc. Method of fabricating an electrochemical device using ultrafast pulsed laser deposition
TW201331399A (zh) * 2012-01-31 2013-08-01 Univ Nat Chi Nan 射頻電漿輔助脈衝雷射沉積系統及由其系統製備薄膜之方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3914476C1 (enExample) * 1989-05-02 1990-06-21 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
US6063455A (en) * 1995-10-09 2000-05-16 Institute For Advanced Engineering Apparatus for manufacturing diamond film having a large area and method thereof
KR100222580B1 (ko) * 1995-12-28 1999-10-01 김덕중 대면적 다이아몬드 박막의 고속증착 제조장치 및 그 제조방법
AUPR026100A0 (en) * 2000-09-20 2000-10-12 Tamanyan, Astghik Deposition of thin films by laser ablation
FI20050216A0 (fi) * 2005-02-23 2005-02-23 Ruuttu Jari Menetelmä valmistaa timanttia, muita jalokiviä, kuten safiiria, rubiinia jne. ja suorittaa näillä pinnoituksia sekä suorittaa pinnoituksia muilla aineilla, kuten boriideillä, oksideillä, nitrideillä jne.
KR101395513B1 (ko) * 2006-02-23 2014-05-15 피코데온 리미티드 오와이 플라스틱 기재 상의 코팅 및 코팅된 플라스틱 제품
KR101219225B1 (ko) * 2010-07-15 2013-01-18 국립대학법인 울산과학기술대학교 산학협력단 펄스 레이저 증착장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090207A (en) * 1998-04-02 2000-07-18 Neocera, Inc. Translational target assembly for thin film deposition system
US20120003395A1 (en) * 2004-06-09 2012-01-05 Imra America, Inc. Method of fabricating an electrochemical device using ultrafast pulsed laser deposition
US20110236601A1 (en) * 2008-08-25 2011-09-29 Solmates B.V. Method for Depositing a Material
TW201331399A (zh) * 2012-01-31 2013-08-01 Univ Nat Chi Nan 射頻電漿輔助脈衝雷射沉積系統及由其系統製備薄膜之方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Thin Solid Film, pp. 450-457, 2004. *

Also Published As

Publication number Publication date
CN106029942B (zh) 2019-05-28
KR102321884B1 (ko) 2021-11-04
KR20160124103A (ko) 2016-10-26
TW201533254A (zh) 2015-09-01
EP2910664B1 (en) 2019-04-03
JP6674898B2 (ja) 2020-04-01
CN106029942A (zh) 2016-10-12
WO2015124589A1 (en) 2015-08-27
EP2910664A1 (en) 2015-08-26
JP2017512252A (ja) 2017-05-18

Similar Documents

Publication Publication Date Title
TWI696717B (zh) 用於以脈衝雷射沉積沉積材料之裝置及以該裝置沉積材料之方法
JP5459739B2 (ja) 蒸着装置及び薄膜製造方法
CN103938161A (zh) 基板蒸镀装置和蒸镀方法
JP2017512252A5 (enExample)
TWI418037B (zh) 藉由改變形狀、大小或雷射光束在製造於橫向結晶化薄膜上之薄膜電晶體元件中產生高一致性的方法
CN104395033A (zh) 用于在使用至少两个桥情况下对大面积衬底进行激光处理的设备和方法
KR101664187B1 (ko) 스퍼터링 장치를 이용한 증착 방법
TWM491672U (zh) 電子束蒸鍍裝置
KR101378638B1 (ko) 표면에 화상을 투사하는 장치 및 그 화상을 이동시키는 장치
WO2004042110A1 (ja) 基板上への成膜方法
US20200101536A1 (en) 3d printing method and apparatus
US9728562B2 (en) Manufacturing method and apparatus of low temperature polycrystalline silicon, and polycrystalline silicon
KR102854229B1 (ko) 증착 장치 및 증착 방법
Akkan et al. Matrix shaped pulsed laser deposition: New approach to large area and homogeneous deposition
ES2378906T3 (es) Método para depositar un material
Rusinov et al. Technological Features of Obtaining of Nanostructured Coatings on TiNi Base by Magnetron Sputtering
US9966392B2 (en) Laser annealing apparatus and method of manufacturing display apparatus by using the same
KR20180066205A (ko) 인듐 오버레이를 함유하는 얇은 층들의 스택의 급속 어닐링 방법
KR20160001919U (ko) 스퍼터링 장치
Kuzanyan et al. Laser deposition of large-area thin films
US20160072065A1 (en) Deposition apparatus and method of depositing thin-film of organic light-emitting display device by using the deposition apparatus
CN108342692B (zh) 蒸镀方法及蒸镀设备
KR102600865B1 (ko) 롤투롤 분출각도조절부를 갖는 증착장치
胡居广 et al. Improvement of thickness uniformity and elements distribution homogeneity for multicomponent films prepared by coaxial scanning pulsed laser deposition technique