JP6651484B2 - 透明導電性フィルム - Google Patents
透明導電性フィルム Download PDFInfo
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- JP6651484B2 JP6651484B2 JP2017149536A JP2017149536A JP6651484B2 JP 6651484 B2 JP6651484 B2 JP 6651484B2 JP 2017149536 A JP2017149536 A JP 2017149536A JP 2017149536 A JP2017149536 A JP 2017149536A JP 6651484 B2 JP6651484 B2 JP 6651484B2
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- 239000002245 particle Substances 0.000 claims description 118
- 230000003287 optical effect Effects 0.000 claims description 97
- 229910052751 metal Inorganic materials 0.000 claims description 85
- 239000002184 metal Substances 0.000 claims description 85
- 239000004020 conductor Substances 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 32
- 239000004840 adhesive resin Substances 0.000 claims description 26
- 229920006223 adhesive resin Polymers 0.000 claims description 26
- 239000012798 spherical particle Substances 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229920001558 organosilicon polymer Polymers 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000002834 transmittance Methods 0.000 description 11
- 229920006125 amorphous polymer Polymers 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000004804 winding Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000011342 resin composition Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 229920003050 poly-cycloolefin Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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- G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
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- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Fluid Mechanics (AREA)
- Laminated Bodies (AREA)
- Non-Insulated Conductors (AREA)
Description
基材11は、結晶性ポリマーフィルム又は非晶性ポリマーフィルムで形成されるが、非晶性ポリマーフィルムで形成されることが好ましい。非晶性ポリマーフィルムは結晶性ポリマーフィルム複より複屈折率が小さくて均一であり、本発明の透明導電性フィルムの色が不均一であるという不備を解消できる。本発明に用いられる非晶性ポリマーフィルムの複屈折率は0〜0.001であるとことが好ましく、0〜0.0005であることがより好ましい。本発明に用いられる非晶性ポリマーフィルムの複屈折率の偏差は0.0005以下であることが好ましく、0.0003以下であることがより好ましい。前記複屈折及びその偏差は、適切な非晶性ポリマーフィルムを選ぶことにより実現することができる。
第1ハードコート層12は基材11の第1表面に形成されており、第2ハードコート層22は基材11の第2表面に形成されている。前記第1ハードコート層12は第1接着剤樹脂17と第1粒子16とを含む。複数の第1粒子16は、規則又は不規則的に第1接着剤樹脂17に分布している。一部の実施例において、第2ハードコート層22は第1接着剤樹脂17と第1粒子16とを含む。
本発明の実施例に係る透明導電性フィルムでは、第1ハードコート層12と第1透明導体層14との間には第1光学調整層13(index matching layer)を有している。なお、第2ハードコート層22と第2透明導体層24との間には第2光学調整層23を有している。第1光学調整層13及び第2光学調整層23は第2接着剤樹脂19及び第2粒子18を含み、そのうち第2接着剤19の物性、材料は第1接着剤樹脂17と同じである。第2粒子18は、第1粒子より粒子径が大きくて、0.1〜2μmであることが好ましい以外、他の物性及び材料が第1粒子16と同じである。第1光学調整層13は、後続の製造工程において第1透明導体層14をパターニングした後の、第1透明導体層14の存在する部分と第1透明導体層14の存在しない部分との反射率の差を減少させ、第1透明導体層14の図案を識別しにくくさせる。第2光学調整層23の機能も同様である。
第1透明導体層14は第1光学調整層13に形成されている。第1透明導体層14は、可視光領域(380nm〜780nm)で透過率が高くて(80%以上)、且つ単位面積あたりの表面抵抗値(単位:Ω/m2:ohms per square)が500Ω/m2以下である層により形成されている。第1透明導体層14の厚さは10nm〜100nmであることが好ましく、15nm〜50nmであることがより好ましい。第1透明導体層14は、例えばインジウムスズ酸化物(ITO:Indium Tin Oxide)、インジウム亜鉛酸化物IZO、又は酸化インジウム−酸化亜鉛複合体のいずれか一つにより形成されている。第2透明導体層24は、第2光学調整層23の基材11から離れる第1表面に形成されている。第2透明導体層24の物性、材料は第1透明導体層13と同じである。
第1金属層15は、第1透明導体層14の表面に形成されている。第1金属層15は、本発明の透明導電性フィルムが例えばタッチパネルに適用される場合、タッチ入力エリアの外側に配線を形成することに用いられる。第1金属層15を形成する材料については、典型的に銅、銀、ニッケル又はこれらの合金であってよく、これら以外の導電性に優れる任意の金属を用いても良い。第1金属層15の厚さは50nm〜500nmであることが好ましく、100nm〜300nmであることがより好ましい。第2金属層25は、第2透明導体層24の表面に形成されている。第2金属層25の用途、材料、厚さは第1金属層15と同じである。
本発明の透明導電性フィルム60の製造方法の一例について説明する。基材11の一面にハードコート剤を塗布し、ハードコート剤は、第1接着剤樹脂17と複数の第1粒子16とを含む。次に、基材11の他面にも同様に、第1接着剤樹脂17と複数の第1粒子16とを含むハードコート剤を塗布する。そして、基材11の両面におけるハードコート剤に紫外線を照射してハードコート剤を硬化させ、第1ハードコート層12と第2ハードコート層22とを形成する。次に第1ハードコート層12の表面に光学調整剤を塗布し、及び第2ハードコート層22の表面に光学調整剤を塗布する。当該屈折率調整剤は、第2接着剤樹脂19と複数の第2粒子18とを含む。次に、第1ハードコート層12上の光学調整剤及び第2ハードコート層22上の光学調整剤に紫外線を照射して光学調整剤を硬化させ、第1光学調整層13と第2光学調整層23とを形成する。次にスパッタリング等を介して第1光学調整層13の表面に順に第1透明導体層14と第1金属層15とを積み重ねる。第1透明導体層14及び第1金属層15は、スパッタリング装置内に透明導体層用ターゲットと金属層用ターゲットとを設けることにより、順次積み重なることができる。第2光学調整層24の表面にも同様に、順に第2透明導体層24と第2金属層25とを積み重ねる。
Claims (14)
- 第1表面と第2表面とを含む基材を備え、
前記第1表面には順に第1ハードコート層、第1光学調整層、第1透明導体層が形成されており、
前記第2表面には順に第2ハードコート層、第2光学調整層、第2透明導体層が形成されており、
前記第1ハードコート層は、第1接着剤樹脂と第1粒子とを含み、前記第1光学調整層は、第2接着剤樹脂と前記第1粒子よりサイズの大きい第2粒子とを含み、
前記第1透明導体層の表面は、前記第1ハードコート層に含まれる複数の第1粒子に起因される複数の第1凸部および前記第1光学調整層に含まれる複数の第2粒子に起因される複数の第2凸部を有し、
前記複数の第1粒子は前記第1ハードコート層の前記第1光学調整層側の表面のみに分布されている、透明導電性フィルム。 - 前記第2ハードコート層は、第1接着剤樹脂と第1粒子とを含み、前記第2光学調整層は、第2接着剤樹脂と前記第1粒子よりサイズの大きい第2粒子とを含む、請求項1に記載の透明導電性フィルム。
- 前記第2透明導体層の表面は、前記第2ハードコート層に含まれる複数の第1粒子に起因される複数の第3凸部および前記第2光学調整層に含まれる複数の第2粒子に起因される複数の第4凸部を有する、請求項2に記載の透明導電性フィルム。
- 前記第2ハードコート層に含まれる複数の第1粒子は前記第2ハードコート層の前記第2光学調整層側の表面のみに分布されている、請求項3に記載の透明導電性フィルム。
- 前記第1粒子及び/又は第2粒子は、球状粒子である、請求項1〜4のいずれか一項に記載の透明導電性フィルム。
- 前記第1粒子の直径は、それを含む第1ハードコート層又は第2ハードコート層の厚さの5%〜25%である、請求項5に記載の透明導電性フィルム。
- 前記第2粒子の直径は0.1〜2μmである、請求項5に記載の透明導電性フィルム。
- 前記第1ハードコート層及び第2ハードコート層の厚さは1〜3μmである、請求項6に記載の透明導電性フィルム。
- 前記第2粒子の直径は、前記第2接着剤樹脂の平坦領域の厚さより大きい、請求項5に記載の透明導電性フィルム。
- 前記第1ハードコート層に含まれる第1粒子の含有量は、第1ハードコート層の0.01%〜10%(重量%)であり、前記第2ハードコート層に含まれる第1粒子の含有量は、第2ハードコート層の0.01%〜10%(重量%)である、請求項1〜9のいずれか一項に記載の透明導電性フィルム。
- 前記第1光学調整層に含まれる第2粒子の含有量は、第1光学調整層の0.01%〜4.5%(重量百分率)であり、前記第2光学調整層に含まれる第2粒子含有量は、第2光学調整層の0.01%〜4.5%(重量百分率)である、請求項1〜10のいずれか一項に記載の透明導電性フィルム。
- 前記第1透明導体層の第1光学調整層から離れる側の表面に第1金属層が形成されており、及び/又は前記第2透明導体層の第2光学調整層から離れる側の表面に第2金属層が形成されている、請求項1〜11のいずれか一項に記載の透明導電性フィルム。
- 前記第1金属層、及び/又は第2金属層の厚さは50〜500nmである、請求項12に記載の透明導電性フィルム。
- 前記第1粒子及び第2粒子の材料は、シリカ、有機ケイ素ポリマー、アクリル酸系ポリマー又はスチレンポリマーである、請求項1〜13のいずれか一項に記載の透明導電性フィルム。
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