JP6650258B2 - プラズマ処理装置及びプラズマ処理装置の運転方法 - Google Patents

プラズマ処理装置及びプラズマ処理装置の運転方法 Download PDF

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JP6650258B2
JP6650258B2 JP2015245786A JP2015245786A JP6650258B2 JP 6650258 B2 JP6650258 B2 JP 6650258B2 JP 2015245786 A JP2015245786 A JP 2015245786A JP 2015245786 A JP2015245786 A JP 2015245786A JP 6650258 B2 JP6650258 B2 JP 6650258B2
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time
component
processing apparatus
plasma processing
intensity
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Japanese (ja)
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JP2017112238A5 (enExample
JP2017112238A (ja
Inventor
洋平 川口
洋平 川口
臼井　建人
建人 臼井
真人 戸上
真人 戸上
智己 井上
智己 井上
茂 中元
中元　　茂
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2015245786A priority Critical patent/JP6650258B2/ja
Priority to KR1020160122799A priority patent/KR101835437B1/ko
Priority to US15/277,272 priority patent/US9934946B2/en
Priority to TW105131351A priority patent/TWI612554B/zh
Publication of JP2017112238A publication Critical patent/JP2017112238A/ja
Publication of JP2017112238A5 publication Critical patent/JP2017112238A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2015245786A 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法 Active JP6650258B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015245786A JP6650258B2 (ja) 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法
KR1020160122799A KR101835437B1 (ko) 2015-12-17 2016-09-26 플라스마 처리 장치 및 플라스마 처리 장치의 운전 방법
US15/277,272 US9934946B2 (en) 2015-12-17 2016-09-27 Plasma processing apparatus and operating method of plasma processing apparatus
TW105131351A TWI612554B (zh) 2015-12-17 2016-09-29 電漿處理裝置及電漿處理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015245786A JP6650258B2 (ja) 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法

Publications (3)

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JP2017112238A JP2017112238A (ja) 2017-06-22
JP2017112238A5 JP2017112238A5 (enExample) 2019-02-14
JP6650258B2 true JP6650258B2 (ja) 2020-02-19

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US (1) US9934946B2 (enExample)
JP (1) JP6650258B2 (enExample)
KR (1) KR101835437B1 (enExample)
TW (1) TWI612554B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
JP6173851B2 (ja) * 2013-09-20 2017-08-02 株式会社日立ハイテクノロジーズ 分析方法およびプラズマエッチング装置
US11504821B2 (en) 2017-11-16 2022-11-22 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring
US11239097B2 (en) * 2019-02-08 2022-02-01 Hitachi High-Tech Corporation Etching apparatus and etching method and detecting apparatus of film thickness
CN112885694B (zh) * 2019-11-29 2025-10-03 东京毅力科创株式会社 夹具、处理系统及处理方法
JP7094377B2 (ja) * 2019-12-23 2022-07-01 株式会社日立ハイテク プラズマ処理方法およびプラズマ処理に用いる波長選択方法
JP7467292B2 (ja) * 2020-03-13 2024-04-15 東京エレクトロン株式会社 解析装置、解析方法及び解析プログラム
TWI895368B (zh) * 2020-03-13 2025-09-01 日商東京威力科創股份有限公司 解析裝置、解析方法及解析程式
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
US12381071B2 (en) 2020-09-17 2025-08-05 Hitachi High-Tech Corporation Plasma processing method and plasma processing apparatus

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
KR100595069B1 (ko) * 2001-06-15 2006-06-30 동경 엘렉트론 주식회사 드라이 에칭 방법
US6903826B2 (en) * 2001-09-06 2005-06-07 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process
JP4833687B2 (ja) * 2006-02-27 2011-12-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2008218898A (ja) * 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
EP2232430A4 (en) * 2007-12-03 2011-11-23 Abbott Medical Optics Inc METHOD OF MANAGING MEDICAL PRODUCTS
US8858727B2 (en) 2008-07-28 2014-10-14 Bsh Bosch Und Siemens Hausgeraete Gmbh Dishwasher machine comprising a sorption drying device
JP5383265B2 (ja) * 2009-03-17 2014-01-08 株式会社日立ハイテクノロジーズ エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム
WO2011016525A1 (ja) * 2009-08-06 2011-02-10 芝浦メカトロニクス株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP5411215B2 (ja) * 2011-08-01 2014-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9887071B2 (en) * 2011-12-16 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone EPD detectors
JP6177513B2 (ja) * 2012-09-28 2017-08-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9330990B2 (en) 2012-10-17 2016-05-03 Tokyo Electron Limited Method of endpoint detection of plasma etching process using multivariate analysis
JP6186152B2 (ja) 2013-03-29 2017-08-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法

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Publication number Publication date
US20170178874A1 (en) 2017-06-22
US9934946B2 (en) 2018-04-03
TW201724161A (zh) 2017-07-01
TWI612554B (zh) 2018-01-21
KR101835437B1 (ko) 2018-03-08
KR20170072784A (ko) 2017-06-27
JP2017112238A (ja) 2017-06-22

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