TWI612554B - 電漿處理裝置及電漿處理方法 - Google Patents

電漿處理裝置及電漿處理方法 Download PDF

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Publication number
TWI612554B
TWI612554B TW105131351A TW105131351A TWI612554B TW I612554 B TWI612554 B TW I612554B TW 105131351 A TW105131351 A TW 105131351A TW 105131351 A TW105131351 A TW 105131351A TW I612554 B TWI612554 B TW I612554B
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TW
Taiwan
Prior art keywords
time
intensity
light
component
processing chamber
Prior art date
Application number
TW105131351A
Other languages
English (en)
Chinese (zh)
Other versions
TW201724161A (zh
Inventor
Yohei Kawaguchi
川口洋平
Tatehito Usui
臼井建人
Masahito Togami
戶上真人
Satomi Inoue
井上智己
Shigeru Nakamoto
中元茂
Original Assignee
Hitachi High-Technologies Corporation
日立全球先端科技股份有限公司
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Application filed by Hitachi High-Technologies Corporation, 日立全球先端科技股份有限公司 filed Critical Hitachi High-Technologies Corporation
Publication of TW201724161A publication Critical patent/TW201724161A/zh
Application granted granted Critical
Publication of TWI612554B publication Critical patent/TWI612554B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW105131351A 2015-12-17 2016-09-29 電漿處理裝置及電漿處理方法 TWI612554B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015245786A JP6650258B2 (ja) 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法
JP2015-245786 2015-12-17

Publications (2)

Publication Number Publication Date
TW201724161A TW201724161A (zh) 2017-07-01
TWI612554B true TWI612554B (zh) 2018-01-21

Family

ID=59065241

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105131351A TWI612554B (zh) 2015-12-17 2016-09-29 電漿處理裝置及電漿處理方法

Country Status (4)

Country Link
US (1) US9934946B2 (enExample)
JP (1) JP6650258B2 (enExample)
KR (1) KR101835437B1 (enExample)
TW (1) TWI612554B (enExample)

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* Cited by examiner, † Cited by third party
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JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
JP6173851B2 (ja) * 2013-09-20 2017-08-02 株式会社日立ハイテクノロジーズ 分析方法およびプラズマエッチング装置
US11504821B2 (en) 2017-11-16 2022-11-22 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring
JP6804694B1 (ja) * 2019-02-08 2020-12-23 株式会社日立ハイテク エッチング処理装置、エッチング処理方法および検出器
CN112885694B (zh) * 2019-11-29 2025-10-03 东京毅力科创株式会社 夹具、处理系统及处理方法
WO2021130798A1 (ja) 2019-12-23 2021-07-01 株式会社日立ハイテク プラズマ処理方法およびプラズマ処理に用いる波長選択方法
JP7467292B2 (ja) * 2020-03-13 2024-04-15 東京エレクトロン株式会社 解析装置、解析方法及び解析プログラム
TWI895368B (zh) * 2020-03-13 2025-09-01 日商東京威力科創股份有限公司 解析裝置、解析方法及解析程式
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
WO2022059114A1 (ja) * 2020-09-17 2022-03-24 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102671263B1 (ko) * 2021-03-15 2024-06-03 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US12706286B2 (en) 2022-03-04 2026-08-11 Hitachi High-Tech Corporation Plasma processing method and plasma processing apparatus

Citations (4)

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US20090144091A1 (en) * 2007-12-03 2009-06-04 Advanced Medical Optics, Inc. Medical product management methods
TW201130034A (en) * 2009-08-06 2011-09-01 Shibaura Mechatronics Corp Plasma etching apparatus and plasma etching method
US20130157387A1 (en) * 2011-12-16 2013-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone EPD Detectors
TW201435621A (zh) * 2012-10-17 2014-09-16 東京威力科創股份有限公司 使用多變量分析之電漿蝕刻程序的終點偵測方法

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US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
CN1956618B (zh) * 2001-06-15 2013-06-12 东京毅力科创株式会社 干蚀刻方法
US6903826B2 (en) * 2001-09-06 2005-06-07 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process
JP4833687B2 (ja) * 2006-02-27 2011-12-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2008218898A (ja) * 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
EP2323536A1 (de) 2008-07-28 2011-05-25 BSH Bosch und Siemens Hausgeräte GmbH Geschirrspülmaschine mit sorptionstrockenvorrichtung
JP5383265B2 (ja) * 2009-03-17 2014-01-08 株式会社日立ハイテクノロジーズ エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム
JP5411215B2 (ja) * 2011-08-01 2014-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6177513B2 (ja) * 2012-09-28 2017-08-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6186152B2 (ja) * 2013-03-29 2017-08-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090144091A1 (en) * 2007-12-03 2009-06-04 Advanced Medical Optics, Inc. Medical product management methods
TW201130034A (en) * 2009-08-06 2011-09-01 Shibaura Mechatronics Corp Plasma etching apparatus and plasma etching method
US20130157387A1 (en) * 2011-12-16 2013-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone EPD Detectors
TW201435621A (zh) * 2012-10-17 2014-09-16 東京威力科創股份有限公司 使用多變量分析之電漿蝕刻程序的終點偵測方法

Also Published As

Publication number Publication date
JP6650258B2 (ja) 2020-02-19
KR101835437B1 (ko) 2018-03-08
KR20170072784A (ko) 2017-06-27
JP2017112238A (ja) 2017-06-22
US20170178874A1 (en) 2017-06-22
US9934946B2 (en) 2018-04-03
TW201724161A (zh) 2017-07-01

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