JP6641382B2 - カーボン膜の成膜方法 - Google Patents
カーボン膜の成膜方法 Download PDFInfo
- Publication number
- JP6641382B2 JP6641382B2 JP2017551519A JP2017551519A JP6641382B2 JP 6641382 B2 JP6641382 B2 JP 6641382B2 JP 2017551519 A JP2017551519 A JP 2017551519A JP 2017551519 A JP2017551519 A JP 2017551519A JP 6641382 B2 JP6641382 B2 JP 6641382B2
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- Japan
- Prior art keywords
- target
- magnetic field
- carbon film
- less
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 45
- 229910052799 carbon Inorganic materials 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005478 sputtering type Methods 0.000 description 2
- -1 argon ions Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 230000000414 obstructive effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (3)
- カーボン製のターゲットを用い、このターゲット表面側にマグネットユニットにより漏洩磁場を作用させた状態でターゲットに電力を投入してスパッタリングし、処理対象物の表面にカーボン膜を成膜するカーボン膜の成膜方法であって、ターゲット表面に漏洩磁場が作用する領域を局所的とし、この漏洩磁場が作用する領域を、ターゲット表面の起点からターゲットに対して相対移動して起点に戻るように周期的に変化させるものにおいて、
マグネットユニットをターゲットに対して所定速度で相対移動させたときのターゲット表面の所定位置における漏洩磁場の平均値を平均磁場強度とし、前記平均磁場強度とターゲットに対する投入電力との積を125G・kW以下、かつ前記平均磁場強度を100G以下にしたことを特徴とするカーボン膜の成膜方法。 - 前記ターゲット表面の所定位置における漏洩磁場の平均磁場強度とターゲットに対する投入電力との積を85G・kW以下、かつ前記平均磁場強度を50G以下にしたことを特徴とする請求項1記載のカーボン膜の成膜方法。
- 前記ターゲットへの投入電力を3kW以下としたことを特徴とする請求項1又は2記載のカーボン膜の成膜方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015228097 | 2015-11-20 | ||
JP2015228097 | 2015-11-20 | ||
PCT/JP2016/003800 WO2017085898A1 (ja) | 2015-11-20 | 2016-08-22 | カーボン膜の成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017085898A1 JPWO2017085898A1 (ja) | 2018-09-06 |
JP6641382B2 true JP6641382B2 (ja) | 2020-02-05 |
Family
ID=58718557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017551519A Active JP6641382B2 (ja) | 2015-11-20 | 2016-08-22 | カーボン膜の成膜方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180305807A1 (ja) |
JP (1) | JP6641382B2 (ja) |
KR (1) | KR20180084944A (ja) |
CN (1) | CN108350568A (ja) |
TW (1) | TWI686488B (ja) |
WO (1) | WO2017085898A1 (ja) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63210006A (ja) * | 1987-02-25 | 1988-08-31 | Meidensha Electric Mfg Co Ltd | アモルフアスカ−ボン薄膜の形成方法 |
JP3428152B2 (ja) | 1994-07-13 | 2003-07-22 | 松下電器産業株式会社 | 有機el素子の製造方法 |
JP2003098306A (ja) * | 2001-09-19 | 2003-04-03 | Sumitomo Metal Mining Co Ltd | 反射防止フィルム |
US20060066248A1 (en) * | 2004-09-24 | 2006-03-30 | Zond, Inc. | Apparatus for generating high current electrical discharges |
US8460519B2 (en) * | 2005-10-28 | 2013-06-11 | Applied Materials Inc. | Protective offset sputtering |
US8114256B2 (en) * | 2007-11-30 | 2012-02-14 | Applied Materials, Inc. | Control of arbitrary scan path of a rotating magnetron |
JP6238060B2 (ja) | 2013-12-20 | 2017-11-29 | トヨタ自動車株式会社 | リチウムイオン二次電池 |
-
2016
- 2016-08-22 WO PCT/JP2016/003800 patent/WO2017085898A1/ja active Application Filing
- 2016-08-22 JP JP2017551519A patent/JP6641382B2/ja active Active
- 2016-08-22 US US15/768,612 patent/US20180305807A1/en not_active Abandoned
- 2016-08-22 CN CN201680063442.8A patent/CN108350568A/zh active Pending
- 2016-08-22 KR KR1020187017347A patent/KR20180084944A/ko not_active Application Discontinuation
- 2016-09-06 TW TW105128796A patent/TWI686488B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201734232A (zh) | 2017-10-01 |
WO2017085898A1 (ja) | 2017-05-26 |
CN108350568A (zh) | 2018-07-31 |
JPWO2017085898A1 (ja) | 2018-09-06 |
KR20180084944A (ko) | 2018-07-25 |
US20180305807A1 (en) | 2018-10-25 |
TWI686488B (zh) | 2020-03-01 |
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