JP6638477B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6638477B2 JP6638477B2 JP2016043778A JP2016043778A JP6638477B2 JP 6638477 B2 JP6638477 B2 JP 6638477B2 JP 2016043778 A JP2016043778 A JP 2016043778A JP 2016043778 A JP2016043778 A JP 2016043778A JP 6638477 B2 JP6638477 B2 JP 6638477B2
- Authority
- JP
- Japan
- Prior art keywords
- inductance
- switching element
- switching
- switching elements
- connection point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
Landscapes
- Inverter Devices (AREA)
Description
4、14:スイッチング素子
4c、14c:コレクタ端子
4e、14e:エミッタ端子
4g、14g:ゲート端子
5:還流ダイオード
6、16:主負極バスバ(主導体)
7:基板
8、18:副負極バスバ(副導体)
21:第1接続点
22:第2接続点
23:駆動回路
24:出力端子
25:入力端子
30:樹脂パッケージ
33、43:副エミッタ端子
34、44:トランジスタチップ
35、45:ダイオードチップ
51、61:正極バスバ
90:インバータ
91:バッテリ
92:平滑コンデンサ
93a、93b:スイッチング素子
94:還流ダイオード
95:負荷
Claims (1)
- 主電流の入力端と出力端を備える複数のスイッチング素子が第1接続点と第2接続点の間に並列に接続されており、当該複数のスイッチング素子に同一の駆動信号が供給される半導体装置であり、
前記複数のスイッチング素子の前記入力端が前記第1接続点に接続されており、
夫々の前記スイッチング素子に対して第1インダクタンスを有する第1インダクタ要素が備えられており、各スイッチング素子の前記出力端が対応する第1インダクタ要素を介して前記第2接続点に接続されており、
前記複数のスイッチング素子の一のスイッチング素子の前記出力端が第2インダクタンスを有する第2インダクタ要素を介して他の夫々の前記スイッチング素子の前記出力端に接続されており、
夫々の前記スイッチング素子に対して第3インダクタンスを有する第3インダクタ要素が備えられており、各スイッチング素子の前記出力端と前記第2接続点との間で前記第1インダクタ要素と並列に、対応する前記第3インダクタ要素が接続されており、
前記第1インダクタンスと前記第3インダクタンスのいずれも前記第2インダクタンスよりも小さい、半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016043778A JP6638477B2 (ja) | 2016-03-07 | 2016-03-07 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016043778A JP6638477B2 (ja) | 2016-03-07 | 2016-03-07 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017162884A JP2017162884A (ja) | 2017-09-14 |
JP6638477B2 true JP6638477B2 (ja) | 2020-01-29 |
Family
ID=59858029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016043778A Active JP6638477B2 (ja) | 2016-03-07 | 2016-03-07 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6638477B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7010167B2 (ja) * | 2018-07-25 | 2022-01-26 | 株式会社デンソー | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3394448B2 (ja) * | 1998-06-10 | 2003-04-07 | 株式会社日立製作所 | パワー半導体装置およびそれを用いた電力変換装置 |
JP2009148077A (ja) * | 2007-12-14 | 2009-07-02 | Toshiba Mitsubishi-Electric Industrial System Corp | 電圧駆動型半導体モジュール及びこれを用いた電力変換器 |
JP5637944B2 (ja) * | 2011-06-29 | 2014-12-10 | 株式会社 日立パワーデバイス | パワー半導体モジュール |
-
2016
- 2016-03-07 JP JP2016043778A patent/JP6638477B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017162884A (ja) | 2017-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7153649B2 (ja) | ゲートパスインダクタンスが低いパワー半導体モジュール | |
JP6717270B2 (ja) | 半導体モジュール | |
US10153708B2 (en) | Three-level power converter | |
CN107155372B (zh) | 半桥功率半导体模块及其制造方法 | |
JP6597549B2 (ja) | 半導体モジュール | |
CN107851661B (zh) | 功率转换器的物理拓扑结构 | |
JP6400201B2 (ja) | パワー半導体モジュール | |
JP6202195B2 (ja) | 半導体装置 | |
JP2014225706A (ja) | 電力用半導体モジュール及び電力変換装置 | |
US10250115B2 (en) | Inverter switching devices with common source inductance layout to avoid shoot-through | |
US20220319976A1 (en) | Three-level power module | |
WO2015008333A1 (ja) | 半導体装置 | |
JP2014217270A (ja) | 3レベル電力変換装置用ハーフブリッジ | |
JP2001274322A (ja) | パワー半導体モジュール | |
JP2019149882A (ja) | 3レベルiタイプインバータおよび半導体モジュール | |
US7671639B2 (en) | Electronic circuit | |
JP3793700B2 (ja) | 電力変換装置 | |
JP2015033222A (ja) | 半導体素子の駆動装置およびそれを用いる電力変換装置 | |
JP2009148077A (ja) | 電圧駆動型半導体モジュール及びこれを用いた電力変換器 | |
JP3896940B2 (ja) | 半導体装置 | |
JP6638477B2 (ja) | 半導体装置 | |
JPH10285950A (ja) | 3レベル電力変換装置の主回路 | |
JP6720601B2 (ja) | 電力変換装置 | |
JP2015225988A (ja) | 半導体装置 | |
US10587181B2 (en) | Power semiconductor device with built-in resistor between control electrode and control terminal, and power semiconductor drive system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190301 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191114 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191126 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191209 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6638477 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |