JP6638152B2 - 蛍光体組成物の製造方法および発光装置 - Google Patents

蛍光体組成物の製造方法および発光装置 Download PDF

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JP6638152B2
JP6638152B2 JP2015035940A JP2015035940A JP6638152B2 JP 6638152 B2 JP6638152 B2 JP 6638152B2 JP 2015035940 A JP2015035940 A JP 2015035940A JP 2015035940 A JP2015035940 A JP 2015035940A JP 6638152 B2 JP6638152 B2 JP 6638152B2
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substrate
crystal
mist
phosphor composition
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JP2016155962A (ja
JP2016155962A5 (enExample
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章夫 高塚
章夫 高塚
真也 織田
真也 織田
俊実 人羅
俊実 人羅
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Flosfia Inc
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JP2015035940A 2015-02-25 2015-02-25 蛍光体組成物の製造方法および発光装置 Active JP6638152B2 (ja)

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JP2016155962A5 JP2016155962A5 (enExample) 2018-04-19
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JP7148766B2 (ja) * 2018-04-27 2022-10-06 株式会社Flosfia カーボンナノチューブ含有膜の成膜方法
EP3805630A4 (en) * 2018-05-24 2022-03-23 Kyocera Corporation OPTICAL DEVICE
WO2019225759A1 (ja) * 2018-05-24 2019-11-28 京セラ株式会社 光学装置
JP7101244B2 (ja) * 2018-05-24 2022-07-14 京セラ株式会社 光学装置

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NL7800405A (nl) * 1978-01-13 1979-07-17 Philips Nv Werkwijze voor het vervaardigen van luminesce- rende schermen, luminescerende schermen ver- kregen volgens deze werkwijze en kathodestraal- buizen voorzien van een dergelijk luminescerend scherm.
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
JP2005064492A (ja) * 2003-07-28 2005-03-10 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子
JP2005136106A (ja) * 2003-10-29 2005-05-26 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子
JP4513446B2 (ja) * 2004-07-23 2010-07-28 豊田合成株式会社 半導体結晶の結晶成長方法
JP5353113B2 (ja) * 2008-01-29 2013-11-27 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
DE102010011895B4 (de) * 2010-03-18 2013-07-25 Freiberger Compound Materials Gmbh Verfahren zur Herstellung eines semipolaren Gruppe III-Nitrid-Kristalls, Substrat, freistehendes semipolares Substrat und Verwendung der Substrate
JP5222916B2 (ja) * 2010-09-17 2013-06-26 シャープ株式会社 半導体基材の製造方法、半導体装置、および電気機器
JP2014167086A (ja) * 2013-02-01 2014-09-11 Shoei Chem Ind Co 珪酸塩系蛍光体及びその製造方法
JP6459001B2 (ja) * 2013-07-09 2019-01-30 株式会社Flosfia 半導体装置又は結晶構造体の製造方法
JP5528612B1 (ja) * 2013-07-09 2014-06-25 Ｒｏｃａ株式会社 半導体装置

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