JP6635980B2 - 端面発光型半導体レーザおよび端面発光型半導体レーザの動作方法 - Google Patents
端面発光型半導体レーザおよび端面発光型半導体レーザの動作方法 Download PDFInfo
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2036—Broad area lasers
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
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- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
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- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Description
2 基板
3 半導体積層体
4 パッシベーション層
5 電気コンタクト構造部
6 応力層
7 トレンチ
8 電気コンタクト層
30 活性ゾーン
33 長手ストリップ
51,52 コンタクト構造部の部分層
66 粗面化表面
70 基面
71 側面
G 成長方向
I 強度
L レーザ放射
n 屈折率
x 方向
y 方向
Claims (13)
- − 半導体積層体内の活性ゾーンと、
− 部分的に前記半導体積層体上に直接的に配置されている応力層と、を有する端面発光型半導体レーザであって、
− 前記活性ゾーンは、前記半導体積層体の成長方向に直交する長手ストリップにおいてのみ通電されるように構成され、
− 前記半導体積層体の厚さは、前記長手ストリップの領域全体に亘って一定であり、したがって前記半導体レーザは、利得導波型であり、
− 前記応力層によって、前記半導体積層体が、前記長手ストリップに直交する方向および前記成長方向に直交する方向に機械的に応力を受ける結果、動作時に発生するレーザ放射の、平面視において前記長手ストリップに隣接する領域の屈折率は、少なくとも2×10−4、また最大でも5×10−3低下し、したがって前記レーザ放射の屈折率導波が実現され、
− 前記応力層(6)は、パッシベーション層(4)の前記半導体積層体(3)とは反対側に配置され、
− 前記長手ストリップ(33)を通電する電気コンタクト構造部(5)に近接して、前記応力層(6)は、前記電気コンタクト構造部(5)が前記応力層(6)を部分的に被覆し、かつ、断面視においてT字形状となるように前記半導体積層体(3)まで伸長し、
− 前記応力層(6)の厚さは、少なくとも100nmであり、前記応力層(6)は、酸化アルミニウム、二酸化チタン、酸化亜鉛、酸化ジルコニウム、および/または酸化ハフニウムからなり、
− 前記成長方向(G)に沿った前記応力層(6)と前記活性ゾーン(30)との間隔は、少なくとも0.1μmであり、かつ最大でも5μmである、
端面発光型半導体レーザ。 - 前記応力層によって引き起こされる引張応力は、少なくとも50MPaであり、かつ最大でも0.5GPaであり、
前記成長方向に沿った前記応力層と前記活性ゾーンとの前記間隔は、少なくとも0.1μmであり、かつ最大でも3μmである、
請求項1に記載の端面発光型半導体レーザ。 - 前記長手ストリップには、前記応力層が存在していない、
請求項1に記載の端面発光型半導体レーザ。 - 前記応力層は、複数の部分層から構成されている、
請求項1に記載の端面発光型半導体レーザ。 - 前記応力層は、電気絶縁性である、
請求項1に記載の端面発光型半導体レーザ。 - 前記応力層は、TiO2で作られている、
請求項1に記載の端面発光型半導体レーザ。 - 前記応力層は、1種類の誘電性の酸化物からなる、
請求項1に記載の端面発光型半導体レーザ。 - 前記応力層は、粗面化表面を有し、
前記粗面化表面の平均粗さは、少なくとも0.04μmであり、かつ最大でも0.2μmである、
請求項1に記載の端面発光型半導体レーザ。 - 前記応力層によってもたらされた前記屈折率の前記低下は、前記長手ストリップの両側のそれぞれにおいて、前記長手ストリップの幅の最大でも30%の幅の領域に亘って生じており、
前記屈折率は、他の箇所では一定である、
請求項1に記載の端面発光型半導体レーザ。 - 傾斜した側面を有するトレンチが前記半導体積層体において、前記長手ストリップに平行に、かつ、前記長手ストリップの両側に形成されており、
前記長手ストリップと前記トレンチとの間隔はそれぞれ、少なくとも20μmであり、
前記トレンチは、前記長手ストリップに平行な方向における前記レーザ放射の導波には寄与しない、
請求項1に記載の端面発光型半導体レーザ。 - 前記応力層は、厚さ勾配を有する、
請求項1に記載の端面発光型半導体レーザ。 - 前記応力層は、前記レーザ放射の放射取出し面の方向に絶えず増大する幅、または、絶えず減少する幅を有する、
請求項1に記載の端面発光型半導体レーザ。 - 請求項1に記載の端面発光型半導体レーザの動作方法であって、
前記応力層による前記半導体積層体における引張応力は、前記半導体レーザの動作中にのみ、意図した動作温度に近づくと生じる、
端面発光型半導体レーザの動作方法。
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DE102017112242A1 (de) | 2017-12-21 |
DE102017112242B4 (de) | 2019-10-24 |
JP2017228772A (ja) | 2017-12-28 |
US20170365982A1 (en) | 2017-12-21 |
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