JP6635926B2 - 不正確さを低減し且つコントラストを維持する充填要素を有する計測ターゲット - Google Patents

不正確さを低減し且つコントラストを維持する充填要素を有する計測ターゲット Download PDF

Info

Publication number
JP6635926B2
JP6635926B2 JP2016551168A JP2016551168A JP6635926B2 JP 6635926 B2 JP6635926 B2 JP 6635926B2 JP 2016551168 A JP2016551168 A JP 2016551168A JP 2016551168 A JP2016551168 A JP 2016551168A JP 6635926 B2 JP6635926 B2 JP 6635926B2
Authority
JP
Japan
Prior art keywords
target
elements
contrast
metrology
specific
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016551168A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017508145A (ja
JP2017508145A5 (cg-RX-API-DMAC7.html
Inventor
ヌリエル アミール
ヌリエル アミール
ラヴィヴ ヨハナン
ラヴィヴ ヨハナン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2017508145A publication Critical patent/JP2017508145A/ja
Publication of JP2017508145A5 publication Critical patent/JP2017508145A5/ja
Application granted granted Critical
Publication of JP6635926B2 publication Critical patent/JP6635926B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2016551168A 2014-02-12 2014-09-09 不正確さを低減し且つコントラストを維持する充填要素を有する計測ターゲット Active JP6635926B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461939129P 2014-02-12 2014-02-12
US61/939,129 2014-02-12
PCT/US2014/054811 WO2015122932A1 (en) 2014-02-12 2014-09-09 Metrology targets with filling elements that reduce inaccuracies and maintain contrast

Publications (3)

Publication Number Publication Date
JP2017508145A JP2017508145A (ja) 2017-03-23
JP2017508145A5 JP2017508145A5 (cg-RX-API-DMAC7.html) 2017-10-19
JP6635926B2 true JP6635926B2 (ja) 2020-01-29

Family

ID=53800509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016551168A Active JP6635926B2 (ja) 2014-02-12 2014-09-09 不正確さを低減し且つコントラストを維持する充填要素を有する計測ターゲット

Country Status (4)

Country Link
JP (1) JP6635926B2 (cg-RX-API-DMAC7.html)
KR (1) KR102119290B1 (cg-RX-API-DMAC7.html)
CN (1) CN104835754B (cg-RX-API-DMAC7.html)
WO (1) WO2015122932A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI780741B (zh) * 2016-02-24 2022-10-11 美商克萊譚克公司 光學計量之準確度提升
US10303839B2 (en) * 2016-06-07 2019-05-28 Kla-Tencor Corporation Electrically relevant placement of metrology targets using design analysis
KR102447611B1 (ko) * 2017-06-06 2022-09-26 케이엘에이 코포레이션 레티클 최적화 알고리즘들 및 최적의 타겟 설계
US11512948B2 (en) * 2020-05-26 2022-11-29 Kla Corporation Imaging system for buried metrology targets

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037671A (en) * 1998-11-03 2000-03-14 Advanced Micro Devices, Inc. Stepper alignment mark structure for maintaining alignment integrity
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US7687925B2 (en) * 2005-09-07 2010-03-30 Infineon Technologies Ag Alignment marks for polarized light lithography and method for use thereof
KR100871801B1 (ko) * 2005-12-28 2008-12-02 동부일렉트로닉스 주식회사 반도체 소자의 얼라인먼트 키 및 그 형성 방법
CN101681093B (zh) * 2007-06-04 2012-05-30 Asml荷兰有限公司 用于实施基于模型的光刻引导的布局设计的方法
KR20100079145A (ko) * 2008-12-30 2010-07-08 주식회사 동부하이텍 오버레이 마크의 디싱 방지를 위한 더미 패턴
US8513821B2 (en) * 2010-05-21 2013-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay mark assistant feature
JP2012033923A (ja) * 2010-07-29 2012-02-16 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
KR20120025765A (ko) * 2010-09-08 2012-03-16 주식회사 하이닉스반도체 반도체 소자의 오버레이 버니어
JP2013120872A (ja) * 2011-12-08 2013-06-17 Toshiba Corp 重ね合わせ計測方法

Also Published As

Publication number Publication date
KR102119290B1 (ko) 2020-06-05
CN104835754A (zh) 2015-08-12
KR20160118916A (ko) 2016-10-12
JP2017508145A (ja) 2017-03-23
CN104835754B (zh) 2019-08-02
WO2015122932A1 (en) 2015-08-20

Similar Documents

Publication Publication Date Title
US10002806B2 (en) Metrology targets with filling elements that reduce inaccuracies and maintain contrast
TWI621190B (zh) 併合成像及散射測量靶
US10274837B2 (en) Metrology target for combined imaging and scatterometry metrology
JP6635926B2 (ja) 不正確さを低減し且つコントラストを維持する充填要素を有する計測ターゲット
US11137692B2 (en) Metrology targets and methods with oblique periodic structures
TWI598972B (zh) 減少散射量測疊對量測技術中演算法之不準確
TWI648515B (zh) 計量目標及其計量量測、目標設計檔案、計量方法及以電腦為基礎之設備
CN105408721B (zh) 计量学目标的极化测量及对应的目标设计
KR102009552B1 (ko) Ic 제조 공정의 메트릭을 계산하기 위한 방법
KR20160013920A (ko) 다층 타겟 설계
KR20150143623A (ko) 타겟 설계 및 생산 시의 직접 자기 조립
CN107818983B (zh) 一种标记图形及其形成方法
TW200826156A (en) Method, an alignment mark and use of a hard mask material
TWI805877B (zh) 週期性半導體裝置偏移計量學系統及方法
TWI603216B (zh) 處理相容分段目標及設計方法
TW201610560A (zh) 由差分程序的決定積體電路製造製程的參數的方法
TW201510641A (zh) 使用精細分段製造阻抗層
KR101970685B1 (ko) 패터닝 방법, 그 패터닝 방법을 이용한 반도체 소자 제조방법, 및 반도체 소자 제조장치
JP2017508145A5 (cg-RX-API-DMAC7.html)
US20110224945A1 (en) Method of performing etch proximity correction, method of forming photomask layout using the method, computer-readable recording medium storing programmed instructions for executing the method, and mask imaging system
JP6465540B2 (ja) 形成方法及び製造方法
US20160070847A1 (en) Pattern dimension calculation method, simulation apparatus, computer-readable recording medium and method of manufacturing a semiconductor device
JP6667669B2 (ja) 半導体製造装置および半導体製造方法
Acosta et al. A novel algorithm for notch detection
KR101418486B1 (ko) 크롬리스 위상-변이 리소그래피를 이용하여 브릿징 피처 형성

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170908

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170908

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180710

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180717

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181015

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181218

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190314

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190516

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190702

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190927

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20191210

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20191217

R150 Certificate of patent or registration of utility model

Ref document number: 6635926

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250