JP6633709B2 - 太陽電池の製造方法及び構造 - Google Patents
太陽電池の製造方法及び構造 Download PDFInfo
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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Description
本明細書において記載される発明は、米国エネルギー省により与えられた契約番号第DE−FC36−07GO17043のもとで、政府の支援によりなされた。政府は、本発明において一定の権利を有する。
(項目1)
太陽電池を製造する方法であって
複数のP型及びN型拡散領域上に予め形成された材料を除去して、前記複数のP型及びN型拡散領域の裏面を露出させる工程と、
上記複数のP型及びN型拡散領域上に絶縁体層を形成する工程と、
レーザを使用して、上記複数のP型及びN型拡散領域のうち対応するP型又はN型拡散領域の表面をそれぞれ露出する複数のコンタクトホールを上記絶縁体層に形成する工程と、
上記複数のコンタクトホールのそれぞれに金属接点を形成して、上記複数のP型及びN型拡散領域それぞれへの電気接続を形成する工程と、を備える方法。
(項目2)
上記複数のP型及びN型拡散領域が、太陽電池基板内に形成される、項目1に記載の方法。
(項目3)
上記太陽電池基板は、単結晶シリコンウェハを含む、項目2に記載の方法。
(項目4)
上記複数のP型及びN型拡散領域が、上記太陽電池基板上に形成される別の層に形成される、項目1に記載の方法。
(項目5)
上記他の層が、ポリシリコンを含む、項目4に記載の方法。
(項目6)
上記複数のP型及びN型拡散領域のうちの一のP型拡散領域に電気接続を行う金属接点が、上記複数のP型及びN型拡散領域のうちの一のN型拡散領域の上を通る、項目1に記載の方法。
(項目7)
項目1に記載の方法を使用して製造される太陽電池。
(項目8)
太陽電池を製造する方法であって、
複数のP型及びN型拡散領域を有する太陽電池構造を設ける段階と、
レーザを使用して、上記複数のP型及びN型拡散領域のうち対応するP型又はN型拡散領域の表面をそれぞれ露出する複数のコンタクトホールを、上記複数のP型及びN型拡散領域上に形成された少なくとも1つの絶縁体層に形成する段階と、
上記複数のコンタクトホールのそれぞれに金属接点を形成して、上記複数のP型及びN型拡散領域のそれぞれへの電気接続を形成する段階とを備え、上記複数のP型及びN型拡散領域のうちの一のP型拡散領域に電気接続を行う金属接点が、上記複数のP型及びN型拡散領域のうちの一のN型拡散領域の上を通る、方法。
(項目9)
上記複数のP型及びN型拡散領域のP型拡散領域へのコンタクトホールが、第1の設定に従うレーザ発射によって形成され、上記複数のP型及びN型拡散領域のN型拡散領域へのコンタクトホールが、上記第1の設定と異なる第2の設定に従うレーザ発射により形成される、項目8に記載の方法。
(項目10)
上記第1の設定が、P型拡散領域へのコンタクトホールを形成するべく、複数のレーザパルスをレーザ発射することを含む、項目9に記載の方法。
(項目11)
上記複数のP型及びN型拡散領域が、太陽電池基板内に形成される、項目8に記載の方法。
(項目12)
上記太陽電池基板は、単結晶シリコンウェハを含む、項目11に記載の方法。
(項目13)
上記複数のP型及びN型拡散領域が、太陽電池基板上に形成された別の層内に形成される、項目8に記載の方法。
(項目14)
上記別の層がポリシリコンを含む、項目13に記載の方法。
(項目15)
項目8に記載の方法を使用して製造される太陽電池。
(項目16)
太陽電池を製造する方法であって、
太陽電池の、少なくとも0.5μmの深さを有する深い拡散領域を形成工程と、
レーザを使用して、絶縁体層にコンタクトホールを形成して上記深い拡散領域を露出させる工程と、
上記深い拡散領域を電気的に接続するべく、上記コンタクトホール内に金属接点を形成する工程とを備える、方法。
(項目17)
上記深い拡散領域が、P型であり、
上記金属接点が、N型拡散領域の上を通る項目16に記載の方法。
(項目18)
上記深い拡散領域が、単結晶シリコンウェハを含む太陽電池基板内に形成される項目16に記載の方法。
(項目19)
上記深い拡散領域と別の深い拡散領域が、上記太陽電池の裏面に形成され、
上記深い拡散が、P型拡散領域であり、上記別の深い拡散領域が、N型拡散領域である、項目16に記載の方法。
(項目20)
項目16に記載の方法を使用して製造される太陽電池。
(項目21)
太陽電池を製造する方法であって、
太陽電池の裏面の層間絶縁膜の上に、上記層間絶縁膜と合わせた特定の絶縁破壊電圧を有する反射防止コーティングを形成する工程と、
レーザを使用して、上記絶縁体層と上記反射防止にコンタクトホールを形成して拡散領域を露出させる工程と、
上記拡散領域に電気的に接続するべく、上記コンタクトホール内に金属接点を形成する工程とを備える、方法。
(項目22)
上記反射防止コーティングが、アモルファスシリコン層と窒化ケイ素層を含む、項目21に記載の方法。
(項目23)
上記特定の絶縁破壊電圧が、1×107V/cmを超える、項目21に記載の方法。
(項目24)
上記特定の絶縁破壊電圧が、上記層間絶縁膜の屈折率を1.95未満に低下させることによって設定される、項目21に記載の方法。
(項目25)
項目21に記載の方法を使用して製造される太陽電池。
(項目26)
太陽電池を製造する方法であって、
ドープされた基板上に、特定タイプのレーザアブレーション用に設定された光学特性を有する絶縁体スタックを形成工程と、
レーザを使用して、上記特定タイプのレーザアブレーションによって上記絶縁体スタックにコンタクトホールを形成する工程と、
上記ドープ領域に電気的に接続するべく、上記コンタクトホール内に金属接点を形成工程とを備える、方法。
(項目27)
上記特定タイプのレーザアブレーションが、間接アブレーションを含む、項目26に記載の方法。
(項目28)
上記絶縁体スタックが、1.97未満の屈折率を有し、上記レーザが、530nm以上の波長を有する、項目27に記載の方法。
(項目29)
上記絶縁体が、ドープされた二酸化シリコンを含む、項目26に記載の方法。
(項目30)
項目26に記載の方法を使用して製造された太陽電池。
Claims (9)
- 複数のP型ポリシリコン拡散領域及び複数のN型ポリシリコン拡散領域と、
前記複数のP型ポリシリコン拡散領域に電気的に結合されるP型金属接点と、
前記複数のN型ポリシリコン拡散領域に電気的に結合され、P型ポリシリコン拡散領域の真上に位置するN型金属接点と、
前記複数のP型ポリシリコン拡散領域及び前記複数のN型ポリシリコン拡散領域の上の第1絶縁層であって、前記複数のN型ポリシリコン拡散領域を露出させる複数のコンタクトホールを有し、前記N型金属接点が前記複数のコンタクトホールを介して前記複数のN型ポリシリコン拡散領域と電気的に接続される、第1絶縁層と、
前記N型金属接点と前記第1絶縁層との間の第2絶縁層であって、前記第1絶縁層の隣り合う2つのコンタクトホールの間に配置され、前記複数のP型ポリシリコン拡散領域及び前記複数のN型ポリシリコン拡散領域のうち前記複数のP型ポリシリコン拡散領域の上にのみパターン形成された、第2絶縁層と、
を備える、太陽電池。 - 太陽電池の裏面の第1導電型の複数のポリシリコン拡散領域及び異なる第2導電型の複数のポリシリコン拡散領域と、
前記第1導電型の前記複数のポリシリコン拡散領域に電気的に結合され、前記第2導電型のポリシリコン拡散領域の真上に位置する第1金属接点と、
前記第2導電型の前記複数のポリシリコン拡散領域に電気的に結合された第2金属接点と、
前記第1導電型の前記複数のポリシリコン拡散領域と前記第2導電型の前記複数のポリシリコン拡散領域上の第1絶縁層であって、前記第1金属接点が、前記第1導電型の前記複数のポリシリコン拡散領域に電気的に結合する複数のコンタクトホールを有する、第1絶縁層と、
前記第1絶縁層と前記第1金属接点との間の第2絶縁層であって、前記第1絶縁層の隣り合う2つのコンタクトホールの間に配置され、前記第1導電型の前記複数のポリシリコン拡散領域及び前記第2導電型の前記複数のポリシリコン拡散領域のうち前記第2導電型の前記複数のポリシリコン拡散領域の上の部分にのみパターン形成された、第2絶縁層と、
を備える、太陽電池。 - 前記第1導電型は、N型である、請求項2に記載の太陽電池。
- 前記第1絶縁層は、窒化ケイ素を有する、請求項1から3のいずれか一項に記載の太陽電池。
- 前記第1絶縁層は、アモルファスシリコンを有する、請求項1から4のいずれか一項に記載の太陽電池。
- 前記第1絶縁層は、
窒化ケイ素層と、
前記窒化ケイ素層の上又は下に配置される、アモルファスシリコン層と、
を有する、請求項1から4のいずれか一項に記載の太陽電池。 - 前記第2絶縁層は、透明材料を有する、請求項1から3のいずれか一項に記載の太陽電池。
- 前記第2絶縁層は、半透明材料を有する、請求項1から7のいずれか一項に記載の太陽電池。
- 前記太陽電池は、裏面接点太陽電池である、請求項1から8のいずれか一項に記載の太陽電池。
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