JP6623511B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP6623511B2
JP6623511B2 JP2014225230A JP2014225230A JP6623511B2 JP 6623511 B2 JP6623511 B2 JP 6623511B2 JP 2014225230 A JP2014225230 A JP 2014225230A JP 2014225230 A JP2014225230 A JP 2014225230A JP 6623511 B2 JP6623511 B2 JP 6623511B2
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JP
Japan
Prior art keywords
frequency
frequency power
antenna
plasma
antenna element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014225230A
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English (en)
Japanese (ja)
Other versions
JP2016091811A5 (enExample
JP2016091811A (ja
Inventor
山涌　純
山涌　　純
龍夫 松土
龍夫 松土
輿水　地塩
地塩 輿水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2014225230A priority Critical patent/JP6623511B2/ja
Priority to TW104135241A priority patent/TWI679672B/zh
Priority to TW108140484A priority patent/TW202013430A/zh
Priority to KR1020150154315A priority patent/KR101872076B1/ko
Priority to US14/934,091 priority patent/US20160126065A1/en
Publication of JP2016091811A publication Critical patent/JP2016091811A/ja
Publication of JP2016091811A5 publication Critical patent/JP2016091811A5/ja
Priority to KR1020180071244A priority patent/KR101998520B1/ko
Application granted granted Critical
Publication of JP6623511B2 publication Critical patent/JP6623511B2/ja
Priority to US16/730,861 priority patent/US11443920B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014225230A 2014-11-05 2014-11-05 プラズマ処理装置 Active JP6623511B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2014225230A JP6623511B2 (ja) 2014-11-05 2014-11-05 プラズマ処理装置
TW104135241A TWI679672B (zh) 2014-11-05 2015-10-27 電漿處理裝置
TW108140484A TW202013430A (zh) 2014-11-05 2015-10-27 電漿處理裝置
KR1020150154315A KR101872076B1 (ko) 2014-11-05 2015-11-04 플라즈마 처리 장치
US14/934,091 US20160126065A1 (en) 2014-11-05 2015-11-05 Plasma processing apparatus
KR1020180071244A KR101998520B1 (ko) 2014-11-05 2018-06-21 플라즈마 처리 장치 및 플라즈마 발생 유닛
US16/730,861 US11443920B2 (en) 2014-11-05 2019-12-30 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014225230A JP6623511B2 (ja) 2014-11-05 2014-11-05 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2016091811A JP2016091811A (ja) 2016-05-23
JP2016091811A5 JP2016091811A5 (enExample) 2017-12-14
JP6623511B2 true JP6623511B2 (ja) 2019-12-25

Family

ID=55853448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014225230A Active JP6623511B2 (ja) 2014-11-05 2014-11-05 プラズマ処理装置

Country Status (4)

Country Link
US (2) US20160126065A1 (enExample)
JP (1) JP6623511B2 (enExample)
KR (2) KR101872076B1 (enExample)
TW (2) TW202013430A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108024436A (zh) * 2016-11-01 2018-05-11 中微半导体设备(上海)有限公司 一种等离子体处理装置
US11222769B2 (en) * 2017-05-26 2022-01-11 Applied Materials, Inc. Monopole antenna array source with gas supply or grid filter for semiconductor process equipment
JP7002268B2 (ja) 2017-09-28 2022-01-20 東京エレクトロン株式会社 プラズマ処理装置
JP7139181B2 (ja) * 2018-07-26 2022-09-20 ワイエイシイテクノロジーズ株式会社 プラズマ処理装置
JP7225058B2 (ja) * 2019-08-19 2023-02-20 株式会社東芝 高周波アンテナ及びプラズマ処理装置
JP7233348B2 (ja) 2019-09-13 2023-03-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2021077451A (ja) * 2019-11-05 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR20230056214A (ko) * 2021-10-20 2023-04-27 세메스 주식회사 플라즈마 처리 장치 및 이를 이용한 플라즈마 처리 방법
KR102735887B1 (ko) * 2021-11-18 2024-12-02 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW376547B (en) * 1997-03-27 1999-12-11 Matsushita Electric Industrial Co Ltd Method and apparatus for plasma processing
KR20010112958A (ko) * 2000-06-15 2001-12-24 황 철 주 고밀도 플라즈마 반응기
US7098599B2 (en) * 2000-12-27 2006-08-29 Japan Science & Technology Corporation Plasma generator
US6667577B2 (en) * 2001-12-18 2003-12-23 Applied Materials, Inc Plasma reactor with spoke antenna having a VHF mode with the spokes in phase
US6876155B2 (en) * 2002-12-31 2005-04-05 Lam Research Corporation Plasma processor apparatus and method, and antenna
JP2007149638A (ja) * 2005-10-27 2007-06-14 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置
JP5231308B2 (ja) * 2009-03-31 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置
JP5227245B2 (ja) 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
US9313872B2 (en) * 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8608903B2 (en) * 2009-10-27 2013-12-17 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8741097B2 (en) 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5757710B2 (ja) * 2009-10-27 2015-07-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5592098B2 (ja) 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5685094B2 (ja) * 2011-01-25 2015-03-18 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5800547B2 (ja) * 2011-03-29 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
JP2013182966A (ja) * 2012-03-01 2013-09-12 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
KR101328520B1 (ko) * 2012-05-17 2013-11-20 한양대학교 산학협력단 플라즈마 장비

Also Published As

Publication number Publication date
KR101998520B1 (ko) 2019-07-09
TWI679672B (zh) 2019-12-11
US20200144026A1 (en) 2020-05-07
JP2016091811A (ja) 2016-05-23
KR101872076B1 (ko) 2018-06-27
TW202013430A (zh) 2020-04-01
US20160126065A1 (en) 2016-05-05
KR20160053812A (ko) 2016-05-13
KR20180074633A (ko) 2018-07-03
US11443920B2 (en) 2022-09-13
TW201630030A (zh) 2016-08-16

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