JP6623078B2 - レーザアニール方法及びレーザアニール装置 - Google Patents
レーザアニール方法及びレーザアニール装置 Download PDFInfo
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- 238000005224 laser annealing Methods 0.000 title claims description 49
- 238000000034 method Methods 0.000 title claims description 45
- 239000000758 substrate Substances 0.000 claims description 144
- 239000010408 film Substances 0.000 claims description 54
- 239000010409 thin film Substances 0.000 claims description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 26
- 238000000137 annealing Methods 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 description 22
- 238000003384 imaging method Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000011144 upstream manufacturing Methods 0.000 description 12
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- 238000005286 illumination Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000005339 levitation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
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Description
先ず、基板6がアモルファスシリコン膜を被着した面を上にして搬送手段1の搬送面に設置され、基板6の縁部が移動機構に保持される。この場合、基板6は、データライン8が基板搬送方向と平行になるように設置される。
この第2の実施形態においては、第1の実施形態におけるような、遮光マスク30に形成された複数のマスクパターン29を、該複数のマスクパターン29に個別に対応させて設けられたマイクロレンズ31により基板6上に縮小投影する代わりに、上記複数のマスクパターン29を一つの投影レンズ(投影光学系)41を使用して基板6上に縮小投影するものである。上記投影レンズ41は、基板6上に遮光マスク30の倒立像を結像するレンズ構成であっても、正立像を結像するレンズ構成であってもよい。
6…基板
10…駆動用TFT
15…選択用TFT
23…第1のTFT形成部
24…第2のTFT形成部
27…マイクロレンズアレイ
28…透明基板
29…マスクパターン
30…遮光マスク
31…マイクロレンズ(投影光学系)
40…減光膜
41…投影レンズ(投影光学系)
L…パルスレーザ光
Claims (8)
- 基板を搬送しながら、前記基板上の第1及び第2の薄膜トランジスタ形成部に異なる照射光量のレーザ光を照射し、前記第1及び第2の薄膜トランジスタ形成部のアモルファスシリコン膜を異なる結晶状態のポリシリコン膜に結晶化するレーザアニール方法であって、
前記第1及び第2の薄膜トランジスタ形成部の前記アモルファスシリコン膜の結晶化は、前記基板の搬送方向及び同方向と交差する方向に並べて遮光マスクに設けられた複数のマスクパターンのうち、前記第2の薄膜トランジスタ形成部に対応して前記基板の搬送方向に並ぶ複数の前記マスクパターンの数が、前記第1の薄膜トランジスタ形成部に対応して同方向に並ぶ複数の前記マスクパターンの数よりも少なくなるように調整された遮光マスクを使用して、前記基板の搬送方向に並んだ複数の前記マスクパターンを介するレーザ光の多重照射により実施されることを特徴とするレーザアニール方法。 - 前記基板への前記レーザ光の照射は、複数の前記マスクパターンに個別に対応させて前記遮光マスクの前記基板側に設けられた複数のマイクロレンズを介して行われることを特徴とする請求項1記載のレーザアニール方法。
- 前記基板への前記レーザ光の照射は、複数の前記マスクパターンを前記基板上に縮小投影する投影レンズを介して行われることを特徴とする請求項1記載のレーザアニール方法。
- 前記第1の薄膜トランジスタ形成部は、画素を駆動する複数の駆動用薄膜トランジスタの形成部であり、
前記第2の薄膜トランジスタ形成部は、前記画素を選択するために前記駆動用薄膜トランジスタを動作させる複数の選択用薄膜トランジスタの形成部であり、
前記駆動用薄膜トランジスタと前記選択用薄膜トランジスタとは、ポリシリコン半導体層の結晶状態が異なることを特徴とする請求項1〜3のいずれか1項に記載のレーザアニール方法。 - 前記駆動用薄膜トランジスタのポリシリコン半導体層の結晶粒径又は電子移動度は、前記選択用薄膜トランジスタのポリシリコン半導体層の結晶粒径又は電子移動度よりも大きいことを特徴とする請求項4記載のレーザアニール方法。
- 基板上に被着されたアモルファスシリコン膜にレーザ光を照射して結晶化するレーザアニール装置であって、
前記基板を搬送する搬送手段と、
前記搬送手段の搬送面に対向配置され、前記基板上の第1及び第2の薄膜トランジスタ形成部に対応させて複数のマスクパターンを設けた遮光マスクと、
前記遮光マスクの前記搬送手段側に設けられ、複数の前記マスクパターンを前記基板上に結像する投影光学系と、
を備え、
前記遮光マスクは、複数の前記マスクパターンを前記基板の搬送方向及び同方向と交差する方向に並べて有し、前記第1及び第2の薄膜トランジスタ形成部に異なる照射光量のレーザ光を照射して、前記第1及び第2の薄膜トランジスタ形成部の前記アモルファスシリコン膜を異なる結晶状態のポリシリコン膜に結晶化させ得るように、前記第2の薄膜トランジスタ形成部に対応して前記基板の搬送方向に並ぶ複数の前記マスクパターンの数が、前記第1の薄膜トランジスタ形成部に対応して同方向に並ぶ複数の前記マスクパターンの数よりも少なくなるように調整されていることを特徴とするレーザアニール装置。 - 前記投影光学系は、複数の前記マスクパターンに個別に対応させて設けられた複数のマイクロレンズであることを特徴とする請求項6記載のレーザアニール装置。
- 前記投影光学系は、複数の前記マスクパターンを前記基板上に縮小投影する投影レンズであることを特徴とする請求項6記載のレーザアニール装置。
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