JP6620088B2 - Ｅｕｖ投影リソグラフィのための照明系及び照明光学ユニット - Google Patents

Ｅｕｖ投影リソグラフィのための照明系及び照明光学ユニット Download PDF

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JP6620088B2
JP6620088B2 JP2016515545A JP2016515545A JP6620088B2 JP 6620088 B2 JP6620088 B2 JP 6620088B2 JP 2016515545 A JP2016515545 A JP 2016515545A JP 2016515545 A JP2016515545 A JP 2016515545A JP 6620088 B2 JP6620088 B2 JP 6620088B2
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individual
mirror
field
illumination
mirrors
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JP2016533513A (ja
JP2016533513A5 (cg-RX-API-DMAC7.html
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マルティン エンドレス
マルティン エンドレス
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Microscoopes, Condenser (AREA)
JP2016515545A 2013-09-18 2014-08-25 Ｅｕｖ投影リソグラフィのための照明系及び照明光学ユニット Active JP6620088B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019159617A JP6987817B2 (ja) 2013-09-18 2019-09-02 Ｅｕｖ投影リソグラフィのための照明系及び照明光学ユニット

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013218749.1A DE102013218749A1 (de) 2013-09-18 2013-09-18 Beleuchtungssystem sowie Beleuchtungsoptik für die EUV-Projektionslithografie
DE102013218749.1 2013-09-18
PCT/EP2014/067958 WO2015039839A1 (de) 2013-09-18 2014-08-25 Beleuchtungssystem sowie beleuchtungsoptik für die euv-projektionslithografie

Related Child Applications (1)

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JP2019159617A Division JP6987817B2 (ja) 2013-09-18 2019-09-02 Ｅｕｖ投影リソグラフィのための照明系及び照明光学ユニット

Publications (3)

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JP2016533513A JP2016533513A (ja) 2016-10-27
JP2016533513A5 JP2016533513A5 (cg-RX-API-DMAC7.html) 2019-03-07
JP6620088B2 true JP6620088B2 (ja) 2019-12-11

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JP2016515545A Active JP6620088B2 (ja) 2013-09-18 2014-08-25 Ｅｕｖ投影リソグラフィのための照明系及び照明光学ユニット
JP2019159617A Active JP6987817B2 (ja) 2013-09-18 2019-09-02 Ｅｕｖ投影リソグラフィのための照明系及び照明光学ユニット

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JP2019159617A Active JP6987817B2 (ja) 2013-09-18 2019-09-02 Ｅｕｖ投影リソグラフィのための照明系及び照明光学ユニット

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Country Link
US (1) US9921484B2 (cg-RX-API-DMAC7.html)
JP (2) JP6620088B2 (cg-RX-API-DMAC7.html)
DE (1) DE102013218749A1 (cg-RX-API-DMAC7.html)
WO (1) WO2015039839A1 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017200658A1 (de) 2017-01-17 2017-03-02 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine Projektionsbelichtungsanlage
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859515B2 (en) 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
DE10053587A1 (de) 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US6438199B1 (en) 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
US6737662B2 (en) * 2001-06-01 2004-05-18 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, device manufactured thereby, control system, computer program, and computer program product
US7170587B2 (en) * 2002-03-18 2007-01-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006128321A (ja) * 2004-10-27 2006-05-18 Nikon Corp 照明光学系、露光装置及びマイクロデバイスの製造方法
US7405809B2 (en) * 2005-03-21 2008-07-29 Carl Zeiss Smt Ag Illumination system particularly for microlithography
DE102006020734A1 (de) 2006-05-04 2007-11-15 Carl Zeiss Smt Ag Beleuchtungssystem für die EUV-Lithographie sowie erstes und zweites optisches Element zum Einsatz in einem derartigen Beleuchtungssystem
DE102006036064A1 (de) 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm
WO2008149178A1 (en) 2007-06-07 2008-12-11 Carl Zeiss Smt Ag Catoptric illumination system for microlithography tool
JP5487118B2 (ja) 2008-02-15 2014-05-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための投影露光装置に使用するファセットミラー
DE102008049586A1 (de) 2008-09-30 2010-04-08 Carl Zeiss Smt Ag Feldfacettenspiegel zum Einsatz in einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die EUV-Mikrolithographie
US8497977B2 (en) 2009-03-12 2013-07-30 Nikon Corporation Optical integrator, illumination optical system, exposure apparatus, and device manufacturing method
WO2010108516A1 (en) * 2009-03-27 2010-09-30 Carl Zeiss Smt Ag Illumination optical system for euv microlithography and euv attenuator for an illumination optical system of this kind, illumination system and projection exposure installation having an illumination optical system of this kind
NL2004831A (en) * 2009-06-17 2010-12-20 Asml Netherlands Bv Lithographic apparatus and method.
DE102009030501A1 (de) * 2009-06-24 2011-01-05 Carl Zeiss Smt Ag Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Beleuchtungsoptik zur Ausleuchtung eines Objektfeldes
NL2004429A (en) * 2009-08-25 2011-02-28 Asml Netherlands Bv Illumination system, lithographic apparatus and method of adjusting an illumination mode.
JP2011077142A (ja) * 2009-09-29 2011-04-14 Nikon Corp 照明光学装置、露光装置及びデバイス製造方法
DE102009045694B4 (de) * 2009-10-14 2012-03-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
US8958053B2 (en) * 2010-08-11 2015-02-17 Asml Netherlands B.V. Lithographic apparatus and alignment method
DE102011003928B4 (de) * 2011-02-10 2012-10-31 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie
DE102011076145B4 (de) * 2011-05-19 2013-04-11 Carl Zeiss Smt Gmbh Verfahren zum Zuordnen einer Pupillenfacette eines Pupillenfacettenspiegels einer Beleuchtungsoptik einer Projektionsbelichtungsanlage zu einer Feldfacette eines Feldfacettenspiegels der Beleuchtungsoptik
DE102012201235B4 (de) * 2012-01-30 2013-08-29 Carl Zeiss Smt Gmbh Verfahren zum Einstellen einer Beleuchtungsgeometrie für eine Be-leuchtungsoptik für die EUV-Projektionslithographie
DE102012210174A1 (de) * 2012-06-18 2013-06-06 Carl Zeiss Smt Gmbh Optisches Bauelement

Also Published As

Publication number Publication date
US20160195816A1 (en) 2016-07-07
JP2016533513A (ja) 2016-10-27
JP6987817B2 (ja) 2022-01-05
US9921484B2 (en) 2018-03-20
DE102013218749A1 (de) 2015-03-19
WO2015039839A1 (de) 2015-03-26
JP2020073949A (ja) 2020-05-14

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