JP6614811B2 - 半導体装置用ステム及び半導体装置 - Google Patents

半導体装置用ステム及び半導体装置 Download PDF

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Publication number
JP6614811B2
JP6614811B2 JP2015110330A JP2015110330A JP6614811B2 JP 6614811 B2 JP6614811 B2 JP 6614811B2 JP 2015110330 A JP2015110330 A JP 2015110330A JP 2015110330 A JP2015110330 A JP 2015110330A JP 6614811 B2 JP6614811 B2 JP 6614811B2
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Japan
Prior art keywords
opening
main body
semiconductor device
stem
conductor pattern
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JP2015110330A
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English (en)
Japanese (ja)
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JP2016225457A (ja
JP2016225457A5 (enExample
Inventor
康之 木村
巧 池田
正夫 海沼
和也 寺島
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2015110330A priority Critical patent/JP6614811B2/ja
Priority to CN201610357001.0A priority patent/CN106206465B/zh
Priority to US15/165,335 priority patent/US20160352069A1/en
Publication of JP2016225457A publication Critical patent/JP2016225457A/ja
Publication of JP2016225457A5 publication Critical patent/JP2016225457A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
JP2015110330A 2015-05-29 2015-05-29 半導体装置用ステム及び半導体装置 Active JP6614811B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015110330A JP6614811B2 (ja) 2015-05-29 2015-05-29 半導体装置用ステム及び半導体装置
CN201610357001.0A CN106206465B (zh) 2015-05-29 2016-05-26 半导体装置用管座和半导体装置
US15/165,335 US20160352069A1 (en) 2015-05-29 2016-05-26 Semiconductor device header and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015110330A JP6614811B2 (ja) 2015-05-29 2015-05-29 半導体装置用ステム及び半導体装置

Publications (3)

Publication Number Publication Date
JP2016225457A JP2016225457A (ja) 2016-12-28
JP2016225457A5 JP2016225457A5 (enExample) 2018-05-31
JP6614811B2 true JP6614811B2 (ja) 2019-12-04

Family

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JP2015110330A Active JP6614811B2 (ja) 2015-05-29 2015-05-29 半導体装置用ステム及び半導体装置

Country Status (3)

Country Link
US (1) US20160352069A1 (enExample)
JP (1) JP6614811B2 (enExample)
CN (1) CN106206465B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6678007B2 (ja) * 2015-11-05 2020-04-08 新光電気工業株式会社 光素子用パッケージ及びその製造方法と光素子装置
JP6715601B2 (ja) * 2016-01-08 2020-07-01 新光電気工業株式会社 光半導体素子用パッケージ
JP6929113B2 (ja) * 2017-04-24 2021-09-01 日本ルメンタム株式会社 光アセンブリ、光モジュール、及び光伝送装置
CN108390255A (zh) * 2018-02-22 2018-08-10 青岛海信宽带多媒体技术有限公司 光学次模块及光模块
JP7181699B2 (ja) * 2018-04-10 2022-12-01 ローム株式会社 半導体レーザ装置
JP7249745B2 (ja) * 2018-08-03 2023-03-31 日本ルメンタム株式会社 光サブアッセンブリ及び光モジュール
JP7245620B2 (ja) * 2018-08-03 2023-03-24 日本ルメンタム株式会社 光サブアッセンブリ及び光モジュール
JP7019838B2 (ja) * 2018-11-21 2022-02-15 三菱電機株式会社 光モジュール
JP7240160B2 (ja) * 2018-12-11 2023-03-15 新光電気工業株式会社 ステム
JP2022046833A (ja) * 2019-01-31 2022-03-24 京セラ株式会社 電子部品搭載用パッケージ及び電子装置
JP7170832B2 (ja) * 2019-02-28 2022-11-14 京セラ株式会社 電子素子搭載用パッケージ及び電子装置
JP7398877B2 (ja) 2019-04-18 2023-12-15 新光電気工業株式会社 半導体装置用ステム及び半導体装置
JP2021027136A (ja) * 2019-08-02 2021-02-22 ＣＩＧ Ｐｈｏｔｏｎｉｃｓ Ｊａｐａｎ株式会社 光モジュール
JP2022185157A (ja) * 2019-10-25 2022-12-14 京セラ株式会社 電子部品搭載用パッケージ、電子装置及び電子モジュール
JPWO2021166073A1 (enExample) * 2020-02-18 2021-08-26
JP7382872B2 (ja) * 2020-03-24 2023-11-17 新光電気工業株式会社 半導体パッケージ用ステム、半導体パッケージ
JP7382871B2 (ja) 2020-03-24 2023-11-17 新光電気工業株式会社 半導体パッケージ用ステム、半導体パッケージ
JP7481245B2 (ja) * 2020-12-09 2024-05-10 新光電気工業株式会社 半導体パッケージ用ステム及びその製造方法、半導体パッケージ
JP7507682B2 (ja) * 2020-12-28 2024-06-28 新光電気工業株式会社 半導体パッケージ用ステム

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3226183B2 (ja) * 1991-11-27 2001-11-05 新光電気工業株式会社 高周波素子用パッケージの同軸線路
JPH11186425A (ja) * 1997-12-24 1999-07-09 Sharp Corp 高周波モジュールデバイス
JP3848616B2 (ja) * 2002-10-15 2006-11-22 新光電気工業株式会社 ガラス端子
KR100480253B1 (ko) * 2002-12-27 2005-04-07 삼성전자주식회사 광모듈
US7196389B2 (en) * 2005-02-14 2007-03-27 Mitsubishi Denki Kabushiki Kaisha Optical semiconductor device package and optical semiconductor device
JP2007048937A (ja) * 2005-08-10 2007-02-22 Rohm Co Ltd 半導体レーザおよびその製法
JP4923542B2 (ja) * 2005-11-30 2012-04-25 三菱電機株式会社 光素子用ステムとこれを用いた光半導体装置
JP4856465B2 (ja) * 2006-04-19 2012-01-18 日本オプネクスト株式会社 光半導体素子搭載基板、および光送信モジュール
JP5004824B2 (ja) * 2007-08-29 2012-08-22 京セラ株式会社 信号端子と信号線路導体との接続構造および電子部品搭載用パッケージならびに電子装置
JP5079474B2 (ja) * 2007-11-29 2012-11-21 シャープ株式会社 キャップ部材およびそれを用いた半導体装置
JP5312358B2 (ja) * 2009-04-24 2013-10-09 京セラ株式会社 電子部品搭載用パッケージおよびそれを用いた電子装置
JP2011061750A (ja) * 2009-09-15 2011-03-24 Nippon Telegr & Teleph Corp <Ntt> 高周波線路の接続方法、構造及び当該構造を有するパッケージ
JP5473583B2 (ja) * 2009-12-22 2014-04-16 京セラ株式会社 電子部品搭載用パッケージおよびそれを用いた電子装置
JP5338711B2 (ja) * 2010-02-23 2013-11-13 Ｔｄｋ株式会社 磁気センサー、磁気検出装置、及び磁気ヘッド
CN103222045B (zh) * 2010-11-29 2016-04-27 京瓷株式会社 电子部件搭载用封装体以及利用了该封装体的电子装置
JP5427325B2 (ja) * 2011-11-30 2014-02-26 パナソニック株式会社 窒化物半導体発光装置

Also Published As

Publication number Publication date
CN106206465B (zh) 2020-09-11
US20160352069A1 (en) 2016-12-01
CN106206465A (zh) 2016-12-07
JP2016225457A (ja) 2016-12-28

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