JP6610816B1 - シリコン単結晶引上装置 - Google Patents

シリコン単結晶引上装置 Download PDF

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Publication number
JP6610816B1
JP6610816B1 JP2019026542A JP2019026542A JP6610816B1 JP 6610816 B1 JP6610816 B1 JP 6610816B1 JP 2019026542 A JP2019026542 A JP 2019026542A JP 2019026542 A JP2019026542 A JP 2019026542A JP 6610816 B1 JP6610816 B1 JP 6610816B1
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Japan
Prior art keywords
window glass
single crystal
inner cylinder
graphite
silicon single
Prior art date
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JP2019026542A
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English (en)
Japanese (ja)
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JP2020132462A (ja
Inventor
崇希 今井
崇希 今井
竹安　志信
志信 竹安
添田　聡
聡 添田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Priority to JP2019026542A priority Critical patent/JP6610816B1/ja
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Priority to KR1020200017193A priority patent/KR102344205B1/ko
Priority to CN202010096773.XA priority patent/CN111575783B/zh
Publication of JP2020132462A publication Critical patent/JP2020132462A/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2019026542A 2019-02-18 2019-02-18 シリコン単結晶引上装置 Active JP6610816B1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019026542A JP6610816B1 (ja) 2019-02-18 2019-02-18 シリコン単結晶引上装置
KR1020200017193A KR102344205B1 (ko) 2019-02-18 2020-02-12 실리콘 단결정 인상장치
CN202010096773.XA CN111575783B (zh) 2019-02-18 2020-02-17 单晶硅提拉装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019026542A JP6610816B1 (ja) 2019-02-18 2019-02-18 シリコン単結晶引上装置

Publications (2)

Publication Number Publication Date
JP6610816B1 true JP6610816B1 (ja) 2019-11-27
JP2020132462A JP2020132462A (ja) 2020-08-31

Family

ID=68691963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019026542A Active JP6610816B1 (ja) 2019-02-18 2019-02-18 シリコン単結晶引上装置

Country Status (3)

Country Link
JP (1) JP6610816B1 (zh)
KR (1) KR102344205B1 (zh)
CN (1) CN111575783B (zh)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0688864B2 (ja) * 1989-09-09 1994-11-09 信越半導体株式会社 単結晶引上装置用整流筒
JP2940437B2 (ja) 1995-06-01 1999-08-25 信越半導体株式会社 単結晶の製造方法及び装置
JP3557756B2 (ja) * 1995-10-14 2004-08-25 信越半導体株式会社 単結晶引上装置用整流筒の観察窓用石英製窓板の曇り防止構造
JP3550487B2 (ja) 1997-11-06 2004-08-04 東芝セラミックス株式会社 横磁界下シリコン単結晶引上装置
JP3952356B2 (ja) 2001-02-28 2007-08-01 信越半導体株式会社 半導体単結晶製造装置及びそれを用いた半導体単結晶の製造方法
JP2007314375A (ja) * 2006-05-26 2007-12-06 Shin Etsu Handotai Co Ltd 単結晶製造装置
JP4917519B2 (ja) 2007-11-29 2012-04-18 コバレントマテリアル株式会社 シリコン単結晶の製造方法
CN103290467B (zh) * 2012-02-24 2016-04-13 宁夏盈谷实业股份有限公司 单晶炉水冷套结构
CN103774118B (zh) * 2012-10-17 2016-03-02 理想能源设备(上海)有限公司 基片承载装置及金属有机化学气相沉积装置
JP6088864B2 (ja) * 2013-03-13 2017-03-01 国立大学法人 鹿児島大学 キャリブレーションシステム、およびキャリブレーション方法
JP5974978B2 (ja) * 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法
CN205394323U (zh) * 2015-12-20 2016-07-27 重庆天和玻璃有限公司 一种窗框夹具
CN106917869B (zh) * 2017-03-23 2019-10-08 上海交通大学 一种应用于高压容器的双锥面玻璃窗口

Also Published As

Publication number Publication date
KR20200100544A (ko) 2020-08-26
JP2020132462A (ja) 2020-08-31
CN111575783A (zh) 2020-08-25
KR102344205B1 (ko) 2021-12-28
CN111575783B (zh) 2021-12-31

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