JP6603309B2 - ゲルマニウムの化学機械研磨 - Google Patents

ゲルマニウムの化学機械研磨 Download PDF

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Publication number
JP6603309B2
JP6603309B2 JP2017510574A JP2017510574A JP6603309B2 JP 6603309 B2 JP6603309 B2 JP 6603309B2 JP 2017510574 A JP2017510574 A JP 2017510574A JP 2017510574 A JP2017510574 A JP 2017510574A JP 6603309 B2 JP6603309 B2 JP 6603309B2
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Japan
Prior art keywords
poly
composition
cmp
germanium
polishing
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Active
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JP2017510574A
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English (en)
Japanese (ja)
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JP2017531311A5 (enExample
JP2017531311A (ja
Inventor
チー−ピン ツァイ
ミーン−チー イエ
ホワイトナー グレン
ルン−タイ ルゥ
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Dispersion Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
JP2017510574A 2014-08-22 2015-06-17 ゲルマニウムの化学機械研磨 Active JP6603309B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/308,587 2014-08-22
US14/308,587 US20160053381A1 (en) 2014-08-22 2014-08-22 Germanium chemical mechanical polishing
PCT/US2015/036222 WO2016028370A1 (en) 2014-08-22 2015-06-17 Germanium chemical mechanical polishing

Publications (3)

Publication Number Publication Date
JP2017531311A JP2017531311A (ja) 2017-10-19
JP2017531311A5 JP2017531311A5 (enExample) 2018-06-28
JP6603309B2 true JP6603309B2 (ja) 2019-11-06

Family

ID=55347801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017510574A Active JP6603309B2 (ja) 2014-08-22 2015-06-17 ゲルマニウムの化学機械研磨

Country Status (6)

Country Link
US (1) US20160053381A1 (enExample)
JP (1) JP6603309B2 (enExample)
KR (1) KR102444550B1 (enExample)
CN (1) CN106574171B (enExample)
TW (1) TWI572687B (enExample)
WO (1) WO2016028370A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
JP2021089906A (ja) * 2018-03-22 2021-06-10 株式会社フジミインコーポレーテッド ゲルマニウム溶解抑制剤
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
JP7409899B2 (ja) * 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
KR102455159B1 (ko) * 2020-07-17 2022-10-18 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
JP2022145619A (ja) * 2021-03-18 2022-10-04 三星エスディアイ株式会社 タングステンパターンウェハー研磨用ｃｍｐスラリー組成物及びこれを用いたタングステンパターンウェハーの研磨方法
KR102849646B1 (ko) * 2021-04-20 2025-08-21 가부시끼가이샤 레조낙 Cmp 연마액 및 연마 방법
EP4405428A4 (en) * 2021-09-23 2025-07-30 Cmc Mat Llc SILICA-BASED SLURRY COMPOSITIONS CONTAINING HIGH MOLECULAR WEIGHT POLYMERS FOR USE IN CHEMICAL-MECHANICAL POLISHING OF DIELECTRICS

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012638A (ja) 2003-10-01 2007-01-18 Asahi Kasei Chemicals Corp 金属用研磨組成物
CN1989600A (zh) * 2004-09-14 2007-06-27 日立化成工业株式会社 Cmp用研磨浆料
EP2125985B1 (en) * 2006-12-29 2012-08-15 LG Chem, Ltd. Cmp slurry composition for forming metal wiring line
US7678605B2 (en) * 2007-08-30 2010-03-16 Dupont Air Products Nanomaterials Llc Method for chemical mechanical planarization of chalcogenide materials
US7915071B2 (en) * 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
KR101396232B1 (ko) * 2010-02-05 2014-05-19 한양대학교 산학협력단 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법
US20120190200A1 (en) * 2011-01-24 2012-07-26 Clarkson University Abrasive Free Silicon Chemical Mechanical Planarization
TWI548728B (zh) * 2011-08-01 2016-09-11 巴斯夫歐洲公司 一種製造半導體裝置的方法，其包含在包含特定有機化合物之ＣＭＰ組成物的存在下化學機械拋光元素鍺及／或Ｓｉ1－ｘ Ｇｅｘ材料
JP2013080751A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物
WO2013157442A1 (ja) * 2012-04-18 2013-10-24 株式会社フジミインコーポレーテッド 研磨用組成物
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries

Also Published As

Publication number Publication date
KR102444550B1 (ko) 2022-09-20
TWI572687B (zh) 2017-03-01
CN106574171A (zh) 2017-04-19
WO2016028370A1 (en) 2016-02-25
TW201608000A (zh) 2016-03-01
JP2017531311A (ja) 2017-10-19
CN106574171B (zh) 2019-03-19
US20160053381A1 (en) 2016-02-25
KR20170044156A (ko) 2017-04-24

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