JP6580804B2 - Mems圧力センサとmems慣性センサの集積構造 - Google Patents
Mems圧力センサとmems慣性センサの集積構造 Download PDFInfo
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- 239000003990 capacitor Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 25
- 238000001514 detection method Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 14
- 239000002184 metal Substances 0.000 description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000003203 everyday effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- 230000001105 regulatory effect Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00166—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/04—Means for compensating for effects of changes of temperature, i.e. other than electric compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/04—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Description
Claims (8)
- MEMS圧力センサ、MEMS慣性センサの集積構造であって、
基板(1)と、
前記基板(1)に形成される絶縁層(2)と、
いずれも前記絶縁層(2)に形成される第1下部電極(3a)及び第2下部電極(3b)と、
を含み、
第1支持部(7a)を介して前記第1下部電極(3a)の上方に支持される第1上部電極(4a)と、
第2支持部(7b)を介して前記第2下部電極(3b)の上方に支持される第2上部電極(4b)と、
をさらに含み、
第3支持部(7c)を介して基板(1)の上方に支持される慣性感知構造(4c)と、
慣性感知構造(4c)とともに慣性センサの慣性検出コンデンサを構成する固定極板と、
をさらに含み、
慣性感知構造(4c)、固定極板により構成される慣性検出コンデンサを基板(1)にパッケージするカバー(8)、をさらに含み、
前記第1上部電極(4a)と前記第1下部電極(3a)によって圧力センサの気圧感知型コンデンサが構成されるように、前記第1上部電極(4a)は感圧膜とされ、前記第1上部電極(4a)と前記第1下部電極(3a)との間のキャビティは密閉キャビティ(9a)とされており、
前記第2上部電極(4b)と前記第2下部電極(3b)は静電容量が外部気圧に伴って変化しない標準コンデンサを構成し、
前記第1支持部(7a)、第2支持部(7b)と第3支持部(7c)は同じ材質、同じ高さを有し、
前記第1上部電極(4a)、第2上部電極(4b)と慣性感知構造(4c)は同じ材質、同じ高さを有し、
前記第1下部電極(3a)と第2下部電極(3b)は同じ材質、同じ高さを有し、
前記第1上部電極(4a)、第2上部電極(4b)の下端面は慣性感知構造(4c)の下端面よりも高くなる
ことを特徴とする集積構造。 - 前記第2上部電極(4b)も感圧膜とされ、前記標準コンデンサは前記第2上部電極(4b)が外部気圧の作用によって変形することを制限するためのストッパ構造をさらに含む、
ことを特徴とする請求項1に記載の集積構造。 - 前記ストッパ構造を形成するために、前記標準コンデンサには前記第2上部電極(4b)を支持するための支持柱(13)が設けられている、
ことを特徴とする請求項2に記載の集積構造。 - 前記ストッパ構造を形成するために、前記標準コンデンサには圧力平衡孔(12)が設けられ、前記標準コンデンサにおける第2上部電極(4b)と第2下部電極(3b)との間に位置するキャビティ(9b)は前記圧力平衡孔(12)を介して外部に連通される、
ことを特徴とする請求項2に記載の集積構造。 - 前記カバー(8)はさらに第2上部電極(4b)と第2下部電極(3b)とにより構成される標準コンデンサを基板(1)にパッケージする、
ことを特徴とする請求項1に記載の集積構造。 - 前記第1上部電極(4a)と第2上部電極(4b)とは一体化構造である、
ことを特徴とする請求項1に記載の集積構造。 - 前記第1支持部(7a)、第2支持部(7b)、第3支持部(7c)にはそれぞれ貫通孔が設けられ、前記貫通孔内にはそれぞれ第1上部電極(4a)、第2上部電極(4b)、慣性感知構造(4c)に電気的に接続される導電性材料(6)が設けられ、第1支持部(7a)、第2支持部(7b)、第3支持部(7c)の下端には複数の対応する接続リード線(5)が形成され、該複数の対応する接続リード線(5)は絶縁層(2)を介して配線され、それぞれ基板(1)におけるボンディングパッドの集中エリア(10)に接続される、
ことを特徴とする請求項1に記載の集積構造。 - 前記固定極板は絶縁層(2)に設けられ、慣性検出コンデンサの第3下部電極(3c)とされる、
ことを特徴とする請求項1に記載の集積構造。
Applications Claiming Priority (2)
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CN201510288750.8A CN104891418B (zh) | 2015-05-29 | 2015-05-29 | Mems压力传感器、mems惯性传感器集成结构 |
CN201510288750.8 | 2015-05-29 |
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JP2019038245A Active JP6580804B2 (ja) | 2015-05-29 | 2019-03-04 | Mems圧力センサとmems慣性センサの集積構造 |
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EP (1) | EP3248936B1 (ja) |
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Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104848982B (zh) * | 2015-05-29 | 2018-01-19 | 歌尔股份有限公司 | 准差分电容式mems压力传感器及其制造方法 |
CN104891418B (zh) * | 2015-05-29 | 2016-09-21 | 歌尔股份有限公司 | Mems压力传感器、mems惯性传感器集成结构 |
CN106698328A (zh) * | 2015-11-12 | 2017-05-24 | 上海丽恒光微电子科技有限公司 | 压力传感器及其制备方法 |
US9926190B2 (en) * | 2016-01-21 | 2018-03-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS devices and methods of forming the same |
CN106018879B (zh) * | 2016-05-12 | 2019-03-22 | 广东合微集成电路技术有限公司 | 一种mems加速度传感器及制造方法 |
CN106092153B (zh) * | 2016-07-28 | 2018-05-01 | 歌尔股份有限公司 | 一种环境传感器及其制造方法 |
EP3279630B1 (en) | 2016-08-03 | 2019-06-26 | ams AG | Pressure sensor module |
CN107089640B (zh) * | 2017-05-02 | 2023-11-10 | 潍坊歌尔微电子有限公司 | 一种mems芯片及制备方法 |
CN107830966B (zh) * | 2017-12-05 | 2023-08-29 | 苏州科技大学 | Mems气体压力敏感元件及其制造工艺 |
CN108178121B (zh) * | 2018-02-07 | 2024-05-03 | 北京先通康桥医药科技有限公司 | 触诊探头及其制造方法 |
CN108190828B (zh) * | 2018-02-07 | 2024-08-13 | 北京先通康桥医药科技有限公司 | Mems传感器线阵、触诊探头及其制造方法 |
CN108362408B (zh) * | 2018-03-08 | 2021-07-02 | 苏州敏芯微电子技术股份有限公司 | 压力传感器及其制造方法 |
CN108551646B (zh) * | 2018-06-25 | 2020-01-17 | 歌尔股份有限公司 | Mems麦克风 |
DE102018222770A1 (de) * | 2018-12-21 | 2020-06-25 | Robert Bosch Gmbh | Mikromechanische Sensoreinrichtung und Verfahren zum Herstellen einer mikromechanischen Sensoreinrichtung |
CN109859986A (zh) * | 2019-01-31 | 2019-06-07 | 王伟 | 一种基于mems技术的单刀双掷敏感组件及含有该敏感组件的压力开关 |
CN112666236A (zh) * | 2020-04-17 | 2021-04-16 | 华中科技大学 | 一种传感器集成芯片及其制备 |
CN113257808B (zh) * | 2021-05-17 | 2023-04-07 | 成都挚信电子技术有限责任公司 | 一种芯片衬底外延片 |
CN114858165B (zh) * | 2022-07-06 | 2022-11-29 | 河北美泰电子科技有限公司 | 惯性导航总成 |
CN115452901A (zh) * | 2022-09-15 | 2022-12-09 | 武汉高芯科技有限公司 | 一种具有检测功能的传感器及检测方法 |
CN118500483A (zh) * | 2024-07-17 | 2024-08-16 | 苏州敏芯微电子技术股份有限公司 | 传感器集成结构、芯片和制作方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5369544A (en) * | 1993-04-05 | 1994-11-29 | Ford Motor Company | Silicon-on-insulator capacitive surface micromachined absolute pressure sensor |
JP3432780B2 (ja) * | 2000-02-22 | 2003-08-04 | 株式会社日立製作所 | 半導体圧力センサ |
JP2007064920A (ja) | 2005-09-02 | 2007-03-15 | Alps Electric Co Ltd | 静電容量型力学量センサ |
JP5127210B2 (ja) | 2006-11-30 | 2013-01-23 | 株式会社日立製作所 | Memsセンサが混載された半導体装置 |
US8220330B2 (en) * | 2009-03-24 | 2012-07-17 | Freescale Semiconductor, Inc. | Vertically integrated MEMS sensor device with multi-stimulus sensing |
US8216882B2 (en) | 2010-08-23 | 2012-07-10 | Freescale Semiconductor, Inc. | Method of producing a microelectromechanical (MEMS) sensor device |
CN102180435B (zh) * | 2011-03-15 | 2012-10-10 | 迈尔森电子(天津)有限公司 | 集成mems器件及其形成方法 |
CN102183335B (zh) * | 2011-03-15 | 2015-10-21 | 迈尔森电子(天津)有限公司 | Mems压力传感器及其制作方法 |
CN102183677B (zh) * | 2011-03-15 | 2012-08-08 | 迈尔森电子(天津)有限公司 | 集成惯性传感器与压力传感器及其形成方法 |
JP5541306B2 (ja) * | 2011-05-27 | 2014-07-09 | 株式会社デンソー | 力学量センサ装置およびその製造方法 |
CN103733304B (zh) | 2011-06-29 | 2016-08-17 | 因文森斯公司 | 其中一部分暴露在环境下并且带有竖直集成电子器件的气密封mems设备 |
DE102011085723A1 (de) * | 2011-11-03 | 2013-05-08 | Continental Teves Ag & Co. Ohg | Bauelement und Verfahren zur Herstellung eines Bauelements |
CN103517169B (zh) | 2012-06-22 | 2017-06-09 | 英飞凌科技股份有限公司 | 具有可调节通风开口的mems结构及mems装置 |
CN102798403B (zh) | 2012-08-21 | 2014-10-22 | 江苏物联网研究发展中心 | Mems薄膜电容式多参数传感器的集成制造方法 |
US20150102437A1 (en) * | 2013-10-14 | 2015-04-16 | Freescale Semiconductor, Inc. | Mems sensor device with multi-stimulus sensing and method of fabrication |
CN103708409B (zh) * | 2013-10-25 | 2015-10-07 | 张家港丽恒光微电子科技有限公司 | 压力传感器和惯性传感器及其形成方法 |
US9199840B2 (en) * | 2013-11-01 | 2015-12-01 | Freescale Semiconductor, Inc. | Sensor protective coating |
CN103712720B (zh) * | 2014-01-02 | 2015-08-19 | 杭州士兰集成电路有限公司 | 电容式压力传感器和惯性传感器集成器件及其形成方法 |
US20160264403A1 (en) * | 2015-03-12 | 2016-09-15 | Freescale Semiconducto, Inc. | Sensor device with multi-stimulus sensing and method of fabrication |
US9586812B2 (en) * | 2015-04-09 | 2017-03-07 | Nxp Usa, Inc. | Device with vertically integrated sensors and method of fabrication |
CN104891418B (zh) | 2015-05-29 | 2016-09-21 | 歌尔股份有限公司 | Mems压力传感器、mems惯性传感器集成结构 |
CN204675826U (zh) * | 2015-05-29 | 2015-09-30 | 歌尔声学股份有限公司 | Mems压力传感器、mems惯性传感器集成结构 |
US10364140B2 (en) * | 2015-09-22 | 2019-07-30 | Nxp Usa, Inc. | Integrating diverse sensors in a single semiconductor device |
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KR101975131B1 (ko) | 2019-05-03 |
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EP3248936B1 (en) | 2021-01-27 |
US20180044174A1 (en) | 2018-02-15 |
CN104891418B (zh) | 2016-09-21 |
CN104891418A (zh) | 2015-09-09 |
JP2018506717A (ja) | 2018-03-08 |
EP3248936A4 (en) | 2018-04-25 |
KR20170094425A (ko) | 2017-08-17 |
JP2019105647A (ja) | 2019-06-27 |
WO2016192372A1 (zh) | 2016-12-08 |
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