JP6579786B2 - プラズマエッチング方法 - Google Patents

プラズマエッチング方法 Download PDF

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JP6579786B2
JP6579786B2 JP2015085360A JP2015085360A JP6579786B2 JP 6579786 B2 JP6579786 B2 JP 6579786B2 JP 2015085360 A JP2015085360 A JP 2015085360A JP 2015085360 A JP2015085360 A JP 2015085360A JP 6579786 B2 JP6579786 B2 JP 6579786B2
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etching
gas
trench
silicon carbide
substrate
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JP2016207753A (ja
JP2016207753A5 (enExample
Inventor
秀則 豊岡
秀則 豊岡
島田　剛
剛 島田
正人 石丸
正人 石丸
淳 須山
淳 須山
高廣 阿部
高廣 阿部
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2015085360A 2015-04-17 2015-04-17 プラズマエッチング方法 Active JP6579786B2 (ja)

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JP2016207753A JP2016207753A (ja) 2016-12-08
JP2016207753A5 JP2016207753A5 (enExample) 2018-03-01
JP6579786B2 true JP6579786B2 (ja) 2019-09-25

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6208275B2 (ja) * 2016-03-23 2017-10-04 Ｓｐｐテクノロジーズ株式会社 炭化珪素半導体素子の製造方法
CN111081871A (zh) * 2019-12-16 2020-04-28 天津理工大学 一种新型相变材料Cr-SbTe的干法刻蚀方法
CN114682064B (zh) * 2022-04-08 2023-02-17 武汉大学 一种sf6废气的射频放电降解方法
CN120356825B (zh) * 2025-06-25 2025-08-26 山东大学 一种基于动态参数刻蚀与后处理的碳化硅刻蚀方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11219938A (ja) * 1998-02-02 1999-08-10 Matsushita Electron Corp プラズマエッチング方法
JP2000091321A (ja) * 1998-09-10 2000-03-31 Hitachi Ltd 表面処理方法および装置
JP5114848B2 (ja) * 2006-02-09 2013-01-09 凸版印刷株式会社 インプリント用モールドの欠陥修正方法及びインプリント用モールドの製造方法
JP5224837B2 (ja) * 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
GB201217712D0 (en) * 2012-10-03 2012-11-14 Spts Technologies Ltd methods of plasma etching

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