CN111081871A - 一种新型相变材料Cr-SbTe的干法刻蚀方法 - Google Patents
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Abstract
本发明公开了一种新型相变材料Cr‑SbTe的干法刻蚀方法，用于相变存储器限域结构的制备，属于半导体存储器中的工艺领域。该方法主要包括以下步骤：a、在氧化硅衬底上采用磁控溅射生长Cr‑SbTe合金薄膜；b、利用紫外光刻技术在薄膜表面形成2um宽度条形光刻胶掩膜；c、采用混合气体对合金薄膜进行刻蚀；d、刻蚀后样品置于丙酮中去除光刻胶，用于测试和表征。该刻蚀方法采用SF6+O2+Ar的气体组合刻蚀Cr‑SbTe相变薄膜材料，其工艺简便，刻蚀后最优条件下Cr‑SbTe薄膜对光刻胶选择比最大可达1.34，刻蚀沟槽侧壁角度倾斜度小，刻蚀后薄膜表面粗糙度小，为后续器件的制备提供了工艺基础。
Description
技术领域
本发明涉及一种新型相变材料Cr-SbTe合金的干法刻蚀方法，用于相变存储器限域结构的制备，属于半导体存储器中的工艺领域。
背景技术
相变存储器以其高速、高密度、低功耗等显著优势，成为了最具商业化推广价值之一的下一代新型存储器。其通过电流施加在器件上产生的热效应来控制相变层材料的晶态与非晶态之间的可逆变换进行信息的存储，因此，相变层材料的优化以及通过限域结构对热量进行集中的刻蚀工艺都是相变器件研究过程中不可或缺的部分。
相变存储器的概念最早是在20世纪60年代末由美国科学家Ovshinsky提出，由于工艺技术有限，相变存储器沉寂了将近40年的历史，直到21世纪才进入了迅速发展的阶段。相变存储器中最为核心的是以硫系化合物为基础的相变材料，作为相变存储器的存储介质，相变材料的优劣直接关系到器件的性能。其中GST相变材料是目前使用和研究最为广泛的相变材料，但是，由于该材料体系的结晶温度在120℃左右，热稳定性较差，因此，大量研究指向具备更高热稳定性、更快速的新型相变材料。2015年中科院上海微系统与技术研究所Yangyang Xia等人研究了Cr掺杂Sb3Te1薄膜作为相变存储器存储介质的器件的性能(Journal of Non-Crystalline Solids 422(2015)46-50)。同年10月Qing Wang等人研究了Cr掺杂Sb2Te3薄膜作为相变存储器介质的器件的性能，研究发现该掺杂合金材料具有超过200℃的结晶温度，具备更高的热稳定性(phys.Status Solidi RRL 9，No.8，470-474(2015))。Cr掺杂Sb-Te系相变材料具有优异的性能，具有十分重要的研究价值。然而，该材料体系的刻蚀工艺的研究目前几乎没有，主要研究材料体系集中在GST材料体系，2007年Gaoming Feng等人研究了CHF3/O2刻蚀Ge2Sb2Te5过程中相关参数对刻蚀的速率、侧壁等的影响，文中提及的刻蚀选择比较小(Electrochemical and Solid-State Letters,2007,10(5):D47-D50)。E.A.Josepht等人比较了Ar、Ar/CHF3,Ar/CHF3/Cl2三种气体环境下对N掺杂Ge2Sb2Te5进行刻蚀的情况，但是选择比依然是一个值得研究的问题(2008IEEEInternationaln Symposium on VLSI Technology,Systems and Applications(VLSI-TSA),2008:142-143)。
本文针对上述问题提出一种新型相变材料Cr-SbTe的干法刻蚀方法，以紫外光刻胶作为刻蚀的掩蔽层，采用SF6+O2+Ar的气体组合刻蚀Cr-SbTe相变薄膜，通过大量实验结果分析证明，通过合理控制SF6+O2+Ar混合气体的组分比例，使得化学刻蚀占刻蚀主导作用，由于其与光刻胶反应作用小，物理轰击过程不强烈，使得刻蚀过程中Cr-SbTe对光刻胶的选择比大，十分有效的解决了上述问题。又因SF6气体中富含F离子，其与Sb、Te形成气态产物直接挥发掉，形成的SbF3、TeF4、CrF3等难挥发物质通过物理轰击过程去除了，使得刻蚀后薄膜表面粗糙度小，为后续器件的制备提供了工艺基础。
发明内容
本发明的目的是为了提供一种Cr-SbTe的干法刻蚀方法，得到大的选择比、陡直的侧壁，光滑的刻蚀后表面，为后续加工步骤提供工艺基础。
为了达到上述目的，本发明采用如下技术方案：一种新型相变材料Cr-SbTe的干法刻蚀方法，采用反应离子刻蚀，该方法包括以下步骤：
步骤一，在氧化硅衬底上磁控溅射生长Cr-SbTe合金材料的薄膜；
步骤二，利用紫外光刻技术在薄膜表面形成图形化(2umX20um长方形)光刻胶掩模；
步骤三：利用六氟化硫与氩气和氧气混合气体进行刻蚀，调整射频功率范围为100W-200W，工作压强范围为10mTorr-30mTorr，刻蚀时间范围为60s-360s；
步骤四，将刻蚀后的样品在丙酮中去除光刻胶，用于测试与表征。
本发明刻蚀过程主要参数限定在一定范围内，从而达到良好的刻蚀效果，即混合气体中，六氟化硫占总气体体积比为50％～80％，氩气占总气体体积比为10％～40％，氧气占总气体体积比为10％；工作压强要求在10～30mTorr之间；射频功率要求在100～200W之间。其中举例能得到很好效果的参数组合：SF6/Ar/O2＝70％/20％/10％，工作压强15mTorr，射频功率200W。
本发明采用反应离子刻蚀技术，通过氟基等离子气体中的氟离子与铬锑碲合金材料中的元素反应，生成易挥发的氟化产物，从而达到刻蚀效果。刻蚀过程主要使用氟元素比例相对较高的SF6气体以及Ar，O2等辅助气体进行，其中SF6为化学反应过程提供充足的氟离子，Ar在刻蚀过程中促进物理轰击作用，O2调节氟自由基的浓度，并有利于降低刻蚀后表面粗糙度。通过控制气体的组分比例，射频功率，工作压强等参数，优化得到最优的刻蚀条件，即陡直的侧壁，光滑的刻蚀后表面以及理想的刻蚀速率。
附图说明
图1为本发明流程示意图。
图中：(1)为光刻胶；(2)为Cr-SbTe薄膜；(3)为SiO2衬底；(4)为掩膜板。
图2为本发明为Cr-SbTe对光刻胶的选择比图。
图3为本发明可供选择的参数及实验结果图。
图4为本发明刻蚀结果的SEM图。
图5为本发明刻蚀薄膜样品表面的AFM图。
具体实施方式：
实施例1：
本发明的实施过程如下：一种新型相变材料Cr-SbTe合金的干法刻蚀方法，采用反应离子刻蚀，该方法包括以下步骤：
步骤一，在氧化硅衬底上磁控溅射生长铬锑碲合金材料的薄膜；铬锑碲三种元素的最佳原子百分比为Cr10.5Sb40.7Te48.8，薄膜厚度约300nm。
步骤二，利用紫外光刻技术在薄膜表面形成图形化光刻胶掩模；图形为线宽2μm的线条结构。
以上步骤一和步骤二参见附图1的a-c，其中图1a为旋涂有光刻胶的Cr-SbTe薄膜；图1b为采用掩膜板对其进行紫外光刻过程；图1c为紫外光刻之后实现图形转移过程。
步骤三，参见附图1d，图1d为采用混合气体对薄膜进行刻蚀过程。利用六氟化硫气体与氩气、氧气混合气体进行刻蚀，调整射频功率范围为100W-200W，工作压强范围为10mTorr-30mTorr；
步骤四，参见附图1e，薄膜刻蚀过程完成后，将刻蚀后的样品在丙酮中去除光刻胶，用于测试与表征。
混合气体中，SF6占总气体体积比为70％，Ar占总气体体积比为20％，O2占总气体体积比为10％。此时最佳的射频功率为200W，工作压强为15mTorr。
图2为Cr-SbTe对光刻胶的选择比，当SF6/Ar+O2比例持续增加时，选择比呈现增大的趋势，最大选择比可达1.32。
图3为可供选择的参数及实验结果，最后条件用虚线标注。由图3可知，刻蚀速率在混合气体SF6/(SF6+O2+Ar)比例为70％时到达最大速率：132nm/min。
图4为最后刻蚀条件下混合气体SF6/(SF6+O2+Ar)比例为70％，刻蚀压强在15mTorr，射频功率200W时刻蚀结果的SEM(扫描电子显微镜)图像。
图5为采用混合气体刻蚀薄膜样品表面的AFM图。粗糙度最小为：0.85nm。
上述实施例仅列示性说明本发明的原理及功效，而非用于限制本发明。任何熟悉此项技术的人员均可在不违背本发明的精神及范围下，对上述实施例进行修改。因此，本发明的权利保护范围，应如权利要求书所列。
Claims (5)
1.一种新型相变材料Cr-SbTe的干法刻蚀方法，采用反应离子刻蚀技术，包括以下步骤：
步骤一：在氧化硅衬底上磁控溅射生长Cr-SbTe合金材料薄膜；
步骤二：利用紫外光刻技术在薄膜表面形成图形化光刻胶掩膜；
步骤三：利用六氟化硫与氩气和氧气混合气体进行刻蚀，调整射频功率范围为50W-200W，工作压强范围为10mTorr-30mTorr；
步骤四：将刻蚀后的样品在丙酮中去除光刻胶，用于测试与表征。
2.根据权利要求书1所述的新型相变材料Cr-SbTe的干法刻蚀方法，其特征在于，材料包含三种元素的原子百分比为：Cr:Sb:Te＝10.5％:40.7％:48.8％。
3.根据权利要求1所述的新型相变材料Cr-SbTe的干法刻蚀方法，其特征在于，在步骤三中所述混合气体中六氟化硫占总气体体积比为50％～80％。
4.根据权利要求1所述的新型相变材料Cr-SbTe的干法刻蚀方法，其特征在于，在步骤三中所述混合气体中氩气占总气体体积比为10％-40％。
5.根据权利要求1所述的新型相变材料Cr-SbTe的干法刻蚀方法，其特征在于，在步骤三中所述混合气体中氧气占总气体体积比为10％。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112591707A (zh) * | 2020-12-15 | 2021-04-02 | 南方科技大学 | 一种纳米锥形阵列结构及其制备方法 |
| CN112599669A (zh) * | 2020-12-17 | 2021-04-02 | 华中科技大学 | 一种相变材料刻蚀方法及三维堆叠相变存储器 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0922124A (ja) * | 1995-07-06 | 1997-01-21 | Dainippon Printing Co Ltd | パターン形成方法およびパターン形成装置 |
| US20070158632A1 (en) * | 2006-01-09 | 2007-07-12 | Macronix International Co., Ltd. | Method for Fabricating a Pillar-Shaped Phase Change Memory Element |
| CN102136548A (zh) * | 2010-12-31 | 2011-07-27 | 中国科学院上海微系统与信息技术研究所 | 一种相变材料的干法刻蚀方法 |
| US20110306215A1 (en) * | 2010-06-14 | 2011-12-15 | Applied Materials, Inc. | Methods of processing substrates having metal materials |
| US20120032165A1 (en) * | 2010-08-06 | 2012-02-09 | Korea Advanced Institute Of Science And Technology | Aqueous solution composition for fluorine doped metal oxide semiconductor and thin film transistor including the same |
| KR20130053121A (ko) * | 2011-11-15 | 2013-05-23 | (재)한국나노기술원 | 고품위 질화물 반도체 성장방법 및 이를 이용한 질화물 반도체 발광소자의 제조방법 |
| CN104851782A (zh) * | 2015-04-09 | 2015-08-19 | 电子科技大学 | 一种4H-SiC UMOSFET栅槽的制作方法 |
| JP2016207753A (ja) * | 2015-04-17 | 2016-12-08 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
| US20180223437A1 (en) * | 2017-02-09 | 2018-08-09 | The Regents Of The University Of Colorado, A Body Corporate | Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination |
-
2019
- 2019-12-16 CN CN201911291575.2A patent/CN111081871A/zh active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0922124A (ja) * | 1995-07-06 | 1997-01-21 | Dainippon Printing Co Ltd | パターン形成方法およびパターン形成装置 |
| US20070158632A1 (en) * | 2006-01-09 | 2007-07-12 | Macronix International Co., Ltd. | Method for Fabricating a Pillar-Shaped Phase Change Memory Element |
| US20110306215A1 (en) * | 2010-06-14 | 2011-12-15 | Applied Materials, Inc. | Methods of processing substrates having metal materials |
| US20120032165A1 (en) * | 2010-08-06 | 2012-02-09 | Korea Advanced Institute Of Science And Technology | Aqueous solution composition for fluorine doped metal oxide semiconductor and thin film transistor including the same |
| CN102136548A (zh) * | 2010-12-31 | 2011-07-27 | 中国科学院上海微系统与信息技术研究所 | 一种相变材料的干法刻蚀方法 |
| KR20130053121A (ko) * | 2011-11-15 | 2013-05-23 | (재)한국나노기술원 | 고품위 질화물 반도체 성장방법 및 이를 이용한 질화물 반도체 발광소자의 제조방법 |
| CN104851782A (zh) * | 2015-04-09 | 2015-08-19 | 电子科技大学 | 一种4H-SiC UMOSFET栅槽的制作方法 |
| JP2016207753A (ja) * | 2015-04-17 | 2016-12-08 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
| US20180223437A1 (en) * | 2017-02-09 | 2018-08-09 | The Regents Of The University Of Colorado, A Body Corporate | Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination |
Non-Patent Citations (2)
| Title |
|---|
| LUGUANG WANG ET AL.: "Reactive-ion etching of Cr-doped Sb2Te3 thin film in Sf6/O2 plasma for non-volatile phase-change memories" * |
| LUGUANG WANG, FANG WANG*, YUXIANG LI, JINRONG HUANG, WEI LI, KAILIANG ZHANG*: "REACTIVE-ION ETCHING OF CR-DOPED SB2TE3 THIN FILM IN SF6/O2 PLASMA FOR NON-VOLATILE PHASE-CHANGE MEMORIES" * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112591707A (zh) * | 2020-12-15 | 2021-04-02 | 南方科技大学 | 一种纳米锥形阵列结构及其制备方法 |
| CN112591707B (zh) * | 2020-12-15 | 2024-05-31 | 南方科技大学 | 一种纳米锥形阵列结构及其制备方法 |
| CN112599669A (zh) * | 2020-12-17 | 2021-04-02 | 华中科技大学 | 一种相变材料刻蚀方法及三维堆叠相变存储器 |
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