JP6574768B2 - 内部高屈折率ピラーを有するｌｅｄドーム - Google Patents

内部高屈折率ピラーを有するｌｅｄドーム Download PDF

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Publication number
JP6574768B2
JP6574768B2 JP2016528619A JP2016528619A JP6574768B2 JP 6574768 B2 JP6574768 B2 JP 6574768B2 JP 2016528619 A JP2016528619 A JP 2016528619A JP 2016528619 A JP2016528619 A JP 2016528619A JP 6574768 B2 JP6574768 B2 JP 6574768B2
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Prior art keywords
pillar
refractive index
substrate
lens portion
led
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JP2016528619A
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English (en)
Japanese (ja)
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JP2016525288A (ja
JP2016525288A5 (enExample
Inventor
ロペス，トニ
ヴァンポーラ，ケネス
Original Assignee
ルミレッズ ホールディング ベーフェー
ルミレッズ ホールディング ベーフェー
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Publication of JP2016525288A5 publication Critical patent/JP2016525288A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means

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  • Led Device Packages (AREA)
JP2016528619A 2013-07-26 2014-07-02 内部高屈折率ピラーを有するｌｅｄドーム Active JP6574768B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361858658P 2013-07-26 2013-07-26
US61/858,658 2013-07-26
PCT/IB2014/062793 WO2015011586A1 (en) 2013-07-26 2014-07-02 Led dome with inner high index pillar

Publications (3)

Publication Number Publication Date
JP2016525288A JP2016525288A (ja) 2016-08-22
JP2016525288A5 JP2016525288A5 (enExample) 2016-09-29
JP6574768B2 true JP6574768B2 (ja) 2019-09-11

Family

ID=51355581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016528619A Active JP6574768B2 (ja) 2013-07-26 2014-07-02 内部高屈折率ピラーを有するｌｅｄドーム

Country Status (6)

Country Link
US (1) US9653665B2 (enExample)
EP (1) EP3033775B1 (enExample)
JP (1) JP6574768B2 (enExample)
KR (1) KR102204741B1 (enExample)
CN (1) CN105393372B (enExample)
WO (1) WO2015011586A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015011586A1 (en) * 2013-07-26 2015-01-29 Koninklijke Philips N.V. Led dome with inner high index pillar
TWI644454B (zh) * 2015-08-19 2018-12-11 佰鴻工業股份有限公司 Light-emitting diode structure
DE102016114474A1 (de) * 2016-08-04 2018-02-08 Osram Opto Semiconductors Gmbh Bauteil mit einem lichtemittierenden Bauelement
JP6555247B2 (ja) * 2016-12-28 2019-08-07 日亜化学工業株式会社 発光装置及びその製造方法
CN111211209B (zh) * 2020-01-16 2021-09-28 江西新正耀光学研究院有限公司 紫外光发光二极管及其制作方法
US20220190213A1 (en) * 2020-12-15 2022-06-16 Lumileds Llc Material stack for leds with a dome

Family Cites Families (30)

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US20020047131A1 (en) * 1999-12-22 2002-04-25 Ludowise Michael J. Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
DE10039433B4 (de) * 2000-08-11 2017-10-26 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
JP2002141556A (ja) * 2000-09-12 2002-05-17 Lumileds Lighting Us Llc 改良された光抽出効果を有する発光ダイオード
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US6455878B1 (en) 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
JP2003017756A (ja) * 2001-06-28 2003-01-17 Toyoda Gosei Co Ltd 発光ダイオード
CN100552987C (zh) * 2002-05-28 2009-10-21 松下电工株式会社 发光器件、使用该器件的照明装置及表面发光照明装置
US6784460B2 (en) * 2002-10-10 2004-08-31 Agilent Technologies, Inc. Chip shaping for flip-chip light emitting diode
US7009213B2 (en) * 2003-07-31 2006-03-07 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
US7582905B2 (en) * 2004-09-08 2009-09-01 Rohm Co., Ltd. Semiconductor light emitting device
US7304425B2 (en) * 2004-10-29 2007-12-04 3M Innovative Properties Company High brightness LED package with compound optical element(s)
US7419839B2 (en) * 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7452737B2 (en) 2004-11-15 2008-11-18 Philips Lumileds Lighting Company, Llc Molded lens over LED die
EP1949463A4 (en) * 2005-11-04 2010-12-29 Univ California LIGHT DIODE (LED) WITH HIGH LIGHT EXTRACTION EFFICIENCY
JP2007242820A (ja) * 2006-03-08 2007-09-20 Asahi Kasei Corp 発光デバイス及び発光デバイスモジュール
US20070257271A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with encapsulated converging optical element
JP2008053263A (ja) * 2006-08-22 2008-03-06 Toyoda Gosei Co Ltd 発光素子及びこれを備えた光源装置
US20080121911A1 (en) * 2006-11-28 2008-05-29 Cree, Inc. Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same
US20090173958A1 (en) * 2008-01-04 2009-07-09 Cree, Inc. Light emitting devices with high efficiency phospor structures
DE102008025756B4 (de) * 2008-05-29 2023-02-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiteranordnung
JP2010147446A (ja) * 2008-12-22 2010-07-01 Panasonic Electric Works Co Ltd 発光装置
JP5689225B2 (ja) * 2009-03-31 2015-03-25 日亜化学工業株式会社 発光装置
WO2011007816A1 (ja) * 2009-07-15 2011-01-20 三菱化学株式会社 半導体発光素子、半導体発光装置、半導体発光素子の製造方法、および半導体発光装置の製造方法
BR112012002964A2 (pt) * 2009-08-12 2020-03-31 Koninklijke Philips Electrnics N. V. Composição dispositivos de iluminação e metodo para ligação de um primeiro corpo a um segundo corpo por meio de uma ligação de alto reparativo
JP2011060966A (ja) * 2009-09-09 2011-03-24 Panasonic Electric Works Co Ltd 発光装置
US20110062469A1 (en) * 2009-09-17 2011-03-17 Koninklijke Philips Electronics N.V. Molded lens incorporating a window element
JP2011233870A (ja) * 2010-04-09 2011-11-17 Mitsubishi Chemicals Corp 半導体発光装置
JP5671982B2 (ja) * 2010-11-30 2015-02-18 三菱化学株式会社 半導体発光素子および半導体発光素子の製造方法
KR101212654B1 (ko) * 2011-05-20 2012-12-14 (주)라이타이저코리아 발광 다이오드 패키지 및 그의 제조 방법
WO2015011586A1 (en) * 2013-07-26 2015-01-29 Koninklijke Philips N.V. Led dome with inner high index pillar

Also Published As

Publication number Publication date
EP3033775A1 (en) 2016-06-22
JP2016525288A (ja) 2016-08-22
EP3033775B1 (en) 2019-09-11
CN105393372B (zh) 2018-06-15
US20160163936A1 (en) 2016-06-09
KR20160039269A (ko) 2016-04-08
US9653665B2 (en) 2017-05-16
KR102204741B1 (ko) 2021-01-20
WO2015011586A1 (en) 2015-01-29
CN105393372A (zh) 2016-03-09

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