JP6573591B2 - フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 - Google Patents

フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 Download PDF

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Publication number
JP6573591B2
JP6573591B2 JP2016178268A JP2016178268A JP6573591B2 JP 6573591 B2 JP6573591 B2 JP 6573591B2 JP 2016178268 A JP2016178268 A JP 2016178268A JP 2016178268 A JP2016178268 A JP 2016178268A JP 6573591 B2 JP6573591 B2 JP 6573591B2
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JP
Japan
Prior art keywords
film
light
semi
photomask
light shielding
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JP2016178268A
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English (en)
Japanese (ja)
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JP2018045016A (ja
Inventor
山口　昇
昇 山口
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Hoya Corp
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Hoya Corp
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Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2016178268A priority Critical patent/JP6573591B2/ja
Priority to TW106128858A priority patent/TWI648593B/zh
Priority to KR1020170113214A priority patent/KR102003598B1/ko
Priority to CN201710793919.4A priority patent/CN107817648B/zh
Publication of JP2018045016A publication Critical patent/JP2018045016A/ja
Application granted granted Critical
Publication of JP6573591B2 publication Critical patent/JP6573591B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
  • Weting (AREA)
JP2016178268A 2016-09-13 2016-09-13 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 Active JP6573591B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016178268A JP6573591B2 (ja) 2016-09-13 2016-09-13 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
TW106128858A TWI648593B (zh) 2016-09-13 2017-08-25 光罩之製造方法、光罩、及顯示裝置之製造方法
KR1020170113214A KR102003598B1 (ko) 2016-09-13 2017-09-05 포토마스크의 제조 방법, 포토마스크, 및 표시 장치의 제조 방법
CN201710793919.4A CN107817648B (zh) 2016-09-13 2017-09-06 光掩模的制造方法、光掩模以及显示装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016178268A JP6573591B2 (ja) 2016-09-13 2016-09-13 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法

Publications (2)

Publication Number Publication Date
JP2018045016A JP2018045016A (ja) 2018-03-22
JP6573591B2 true JP6573591B2 (ja) 2019-09-11

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JP2016178268A Active JP6573591B2 (ja) 2016-09-13 2016-09-13 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法

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Country Link
JP (1) JP6573591B2 (zh)
KR (1) KR102003598B1 (zh)
CN (1) CN107817648B (zh)
TW (1) TWI648593B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109298590B (zh) * 2018-09-26 2020-07-28 深圳市华星光电技术有限公司 用于制作衬垫式bps的光罩和液晶显示面板
CN111367142A (zh) * 2018-12-26 2020-07-03 聚灿光电科技（宿迁）有限公司 一种包含不同透光性的新型光学掩膜版
JP6993530B1 (ja) 2020-12-25 2022-01-13 株式会社エスケーエレクトロニクス フォトマスク、フォトマスクの製造方法、表示装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05127362A (ja) * 1991-11-08 1993-05-25 Hoya Corp フオトマスクブランク及びフオトマスク
JPH05341495A (ja) * 1992-06-11 1993-12-24 Mitsubishi Electric Corp 位相シフトマスクの製造方法
JPH06148868A (ja) * 1992-11-05 1994-05-27 Nippon Steel Corp レチクルの形成方法
KR0143340B1 (ko) * 1994-09-09 1998-08-17 김주용 위상반전 마스크
JP3645882B2 (ja) * 2002-03-01 2005-05-11 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランクの製造方法
JP4521694B2 (ja) 2004-03-09 2010-08-11 Ｈｏｙａ株式会社 グレートーンマスク及び薄膜トランジスタの製造方法
JP2006030320A (ja) * 2004-07-12 2006-02-02 Hoya Corp グレートーンマスク及びグレートーンマスクの製造方法
JP5196098B2 (ja) 2005-09-21 2013-05-15 大日本印刷株式会社 階調をもつフォトマスクおよびその製造方法
JP4695964B2 (ja) * 2005-11-09 2011-06-08 アルバック成膜株式会社 グレートーンマスク及びその製造方法
KR101084000B1 (ko) 2006-01-16 2011-11-17 주식회사 에스앤에스텍 위상 반전형 그레이톤 블랭크 마스크 및 위상반전형포토마스크와 그 제조 방법
TWI422961B (zh) * 2007-07-19 2014-01-11 Hoya Corp 光罩及其製造方法、圖案轉印方法、以及顯示裝置之製造方法
JP2011215197A (ja) * 2010-03-31 2011-10-27 Hoya Corp フォトマスク及びその製造方法
KR20140034523A (ko) * 2012-09-12 2014-03-20 주식회사 에스앤에스텍 대면적 블랭크 마스크와 포토마스크 및 그의 제조방법
JP2015064404A (ja) * 2013-09-24 2015-04-09 株式会社エスケーエレクトロニクス 位相シフトマスク及びその製造方法
JP2015212720A (ja) * 2014-05-01 2015-11-26 Hoya株式会社 多階調フォトマスクの製造方法、多階調フォトマスク及び表示装置の製造方法
JP6661262B2 (ja) * 2014-05-29 2020-03-11 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法

Also Published As

Publication number Publication date
TWI648593B (zh) 2019-01-21
TW201812441A (zh) 2018-04-01
CN107817648A (zh) 2018-03-20
KR20180029877A (ko) 2018-03-21
JP2018045016A (ja) 2018-03-22
KR102003598B1 (ko) 2019-07-24
CN107817648B (zh) 2020-12-29

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