JP6568339B2 - 強固に固定されたバルク弾性波共振器における境界リングモード抑制 - Google Patents

強固に固定されたバルク弾性波共振器における境界リングモード抑制 Download PDF

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JP6568339B2
JP6568339B2 JP2014044851A JP2014044851A JP6568339B2 JP 6568339 B2 JP6568339 B2 JP 6568339B2 JP 2014044851 A JP2014044851 A JP 2014044851A JP 2014044851 A JP2014044851 A JP 2014044851A JP 6568339 B2 JP6568339 B2 JP 6568339B2
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electrode
boundary
extension
piezoelectric layer
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Japanese (ja)
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JP2014176095A5 (https=
JP2014176095A (ja
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アリレザ、タジク
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Qorvo US Inc
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Triquint Semiconductor Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/589—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices
    • H03H9/706—Duplexers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2014044851A 2013-03-12 2014-03-07 強固に固定されたバルク弾性波共振器における境界リングモード抑制 Active JP6568339B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/796,824 2013-03-12
US13/796,824 US9450565B2 (en) 2013-03-12 2013-03-12 Border ring mode suppression in solidly-mounted bulk acoustic wave resonator

Publications (3)

Publication Number Publication Date
JP2014176095A JP2014176095A (ja) 2014-09-22
JP2014176095A5 JP2014176095A5 (https=) 2017-04-13
JP6568339B2 true JP6568339B2 (ja) 2019-08-28

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JP2014044851A Active JP6568339B2 (ja) 2013-03-12 2014-03-07 強固に固定されたバルク弾性波共振器における境界リングモード抑制

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US (1) US9450565B2 (https=)
JP (1) JP6568339B2 (https=)

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KR101923572B1 (ko) * 2015-03-16 2018-11-29 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치 및 그 제조 방법
KR101923573B1 (ko) * 2015-03-16 2018-11-29 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치 및 그 제조 방법
US9985194B1 (en) 2015-05-13 2018-05-29 Qorvo Us, Inc. Spurious mode suppression in bulk acoustic wave resonator
US10686425B2 (en) 2017-06-30 2020-06-16 Texas Instruments Incorporated Bulk acoustic wave resonators having convex surfaces, and methods of forming the same
US10615772B2 (en) 2017-06-30 2020-04-07 Texas Instruments Incorporated Acoustic wave resonators having Fresnel surfaces
US10622966B2 (en) 2017-07-26 2020-04-14 Texas Instruments Incorporated Bulk acoustic wave resonators having a phononic crystal acoustic mirror
US10855251B2 (en) 2017-08-08 2020-12-01 Texas Instruments Incorporated Unreleased plane acoustic wave resonators
US10277194B2 (en) 2017-09-15 2019-04-30 Globalfoundries Singapore Pte. Ltd. Acoustic MEMs resonator and filter with fractal electrode and method for producing the same
US11233496B2 (en) 2018-02-21 2022-01-25 Vanguard International Semiconductor Singapore Pte. Ltd. Acoustic resonator and filter with electrode having zig-zag edge and method for producing the same
JP2020053966A (ja) 2018-09-24 2020-04-02 スカイワークス グローバル プライベート リミテッド バルク弾性波デバイスにおける多層隆起フレーム
JP7456734B2 (ja) * 2019-06-17 2024-03-27 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
US11469735B2 (en) * 2018-11-28 2022-10-11 Taiyo Yuden Co., Ltd. Acoustic wave device, filter, and multiplexer
CN111384909B (zh) * 2018-12-27 2025-12-12 天津大学 电极厚度不对称的体声波谐振器、滤波器和电子设备
US10879872B2 (en) * 2019-04-19 2020-12-29 Akoustis, Inc. BAW resonators with antisymmetric thick electrodes
WO2021200677A1 (ja) 2020-03-31 2021-10-07 株式会社村田製作所 弾性波装置
DE102021209875A1 (de) 2020-09-18 2022-03-24 Skyworks Global Pte. Ltd. Akustische volumenwellenvorrichtung mit erhöhter rahmenstruktur
EP4210221A4 (en) * 2020-09-23 2023-11-08 Huawei Technologies Co., Ltd. Resonator and preparation method, filter, and electronic device thereof
US12088278B2 (en) 2020-09-30 2024-09-10 Skyworks Global Pte. Ltd. Bulk acoustic wave resonator with patterned mass loading layer and recessed frame

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WO2005034345A1 (en) * 2003-10-06 2005-04-14 Philips Intellectual Property & Standards Gmbh Resonator structure and method of producing it
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JPWO2009013938A1 (ja) * 2007-07-20 2010-09-30 株式会社村田製作所 圧電共振子及び圧電フィルタ装置
US8035277B2 (en) * 2007-08-14 2011-10-11 Avago Technologies Wireless Ip (Singapore) Pte.Ltd. Method for forming a multi-layer electrode underlying a piezoelectric layer and related structure
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CN101796726B (zh) * 2007-08-24 2014-04-02 太阳诱电株式会社 压电薄膜谐振器、使用该压电薄膜谐振器的滤波器、使用该滤波器的双工器、以及使用该滤波器或该双工器的通信设备
JP5563739B2 (ja) * 2008-02-20 2014-07-30 太陽誘電株式会社 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置
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Publication number Publication date
JP2014176095A (ja) 2014-09-22
US20140273881A1 (en) 2014-09-18
US9450565B2 (en) 2016-09-20

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