JP6565609B2 - 電子装置、電子部品及び半田 - Google Patents
電子装置、電子部品及び半田 Download PDFInfo
- Publication number
- JP6565609B2 JP6565609B2 JP2015215475A JP2015215475A JP6565609B2 JP 6565609 B2 JP6565609 B2 JP 6565609B2 JP 2015215475 A JP2015215475 A JP 2015215475A JP 2015215475 A JP2015215475 A JP 2015215475A JP 6565609 B2 JP6565609 B2 JP 6565609B2
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- Prior art keywords
- solder
- electronic device
- temperature
- electronic component
- substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910000679 solder Inorganic materials 0.000 title claims description 210
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- 229910052797 bismuth Inorganic materials 0.000 claims description 35
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- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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Description
図1は第1の実施の形態に係る電子装置の一例を示す図である。図1には、第1の実施の形態に係る電子装置の一例の要部断面を模式的に図示している。
電子部品10は、半導体素子(半導体チップ)、半導体チップを含む半導体装置(半導体パッケージ)、回路基板等である。電子部品10は、その表面10aに、内部に設けられる図示しないトランジスタや導体部(配線、ビア等)に電気的に接続された電極11を有する。
一般的に金属材料は、融点の1/2以上の温度になると回復、再結晶が生じ、組織はより安定な状態となる。
図2は第1の実施の形態に係る接合部において得られる作用効果を概念的に示す図である。
式(1)より、室温27℃で半田31を回復、再結晶させるためには、物質32を含有する半田31の融点Tmを、Tm≦327℃とすることが好ましい。
(27[℃]+273)[K]≧0.6×(Tm[℃]+273)[K]・・・(2)
式(2)より、室温27℃で半田31を、より回復、再結晶させるためには、物質32を含有する半田31の融点Tmを、Tm≦227℃とすることが好ましい。
(0[℃]+273)[K]≧0.5×(Tm[℃]+273)[K]・・・(3)
式(3)より、0℃で半田31を回復、再結晶させるためには、物質32を含有する半田31の融点Tmを、Tm≦273℃とすることが好ましい。
(0[℃]+273)[K]≧0.6×(Tm[℃]+273)[K]・・・(4)
式(4)より、0℃で半田31を、より回復、再結晶させるためには、物質32を含有する半田31の融点Tmを、Tm≦182℃とすることが好ましい。
この第2の実施の形態では、電子装置或いは電子機器の動作に伴う昇降温過程で結晶構造が可逆的に変化する物質を含有する半田について、具体例を挙げて、より詳細に説明する。
例えば、上記図1に示す電子部品10と電子部品20との接合部30の半田31として、Sn−Bi系半田を用いる。その半田31内に、電子装置1或いは電子機器2(電子装置)の動作前の温度(例えば0℃〜30℃)と動作時の温度(例えば80℃〜100℃)との間の昇降温過程で結晶構造が可逆的に変化する物質32として、Ag2Inを含有させる。
図3は、42重量%のSnと58重量%のBiとを含むSn−Bi共晶半田に対し、Ag及びInを1:1で含有させた時の計算状態図である。図3において、横軸はSn−Bi共晶半田を原点とした時のAg及びInの含有量[重量%]を表し、縦軸は温度[℃]を表している。例えば、横軸のAg及びInの含有量1重量%は、Sn−Bi共晶半田に1重量%のAg及び1重量%のInを含有させていることを表す。
第2の実施の形態に係るSn−Bi−Ag−In系計算状態図の一例を図4に示す。
図4は、Ag及びInを含有するSn−Bi系半田のSn含有量を変化させた時の計算状態図である。図4において、横軸はSn含有量[重量%]、縦軸は温度[℃]を表している。Bi、Ag及びInの割合は一定としている。
この場合、図4より、Sn含有量が31.8重量%以下では、接合部が100℃以上とならない電子装置の動作の間、Ag2Inの、γ−brass構造からHCP構造への変態が起こらない。即ち、Ag2Inがγ−brass構造を採る相40から、γ−brass構造とHCP構造のAg2Inが共存する相60や、Ag2InがHCP構造を採る相50への変態が起こらない。電子装置の動作時に、Ag2In含有Sn−Bi系半田のAg2Inが、γ−brass構造からHCP構造に変態しないと、変態による歪みが発生せず、半田の回復、再結晶が促進されないため、結晶粒が粗大化し得る。電子装置の動作時に、それに含まれる接合部が100℃以上とならないような場合には、Ag2In含有Sn−Bi系半田のSn含有量は、31.8重量%超とする。
図5は、Sn−Bi共晶半田にAg及びInを2:3で含有させた時の計算状態図である。図5において、横軸はAg含有量[重量%]、縦軸は温度[℃]を表している。
この場合、図5より、Ag含有量が5.5重量%を超えると、接合部が100℃以上とならない電子装置の動作の間、Ag2Inの、γ−brass構造からHCP構造への変態が起こらない。即ち、Ag2Inがγ−brass構造を採る相40から、γ−brass構造とHCP構造のAg2Inが共存する相60や、Ag2InがHCP構造を採る相50への変態が起こらない。そのため、電子装置の動作時に、Ag2Inの変態による歪みが発生せず、半田の回復、再結晶が促進されないため、結晶粒が粗大化し得る。電子装置の動作時に、それに含まれる接合部が100℃以上とならない場合には、Ag2In含有Sn−Bi系半田のAg含有量は、5.5重量%以下とする。
図6は、Sn−Bi共晶半田にAg及びInを、Ag含有量>In含有量となる条件で含有させた時の計算状態図である。Ag含有量は3重量%以下とし、Ag及びInを2:1としている。図6において、横軸はAg含有量(>In含有量)[重量%]、縦軸は温度[℃]を表している。
第2の実施の形態に係るAg2In含有Sn−Bi系半田の走査型電子顕微鏡(Scanning Electron Microscope;SEM)像の一例を図7〜図9に示す。
以上説明したように、Sn−Bi系半田に、電子装置の動作に伴う昇降温過程で結晶構造が可逆的に変化する物質としてAg2Inを含有させることで、その結晶構造の変化により発生する歪みで半田の回復、再結晶が促進され、結晶粒の粗大化が抑えられる。Ag2In含有Sn−Bi系半田を電子部品間接合部に用いることで、結晶粒の粗大化に起因した性質のばらつきやクラックの進展の容易化を抑え、優れた信頼性の接合部を実現することができる。更に、そのような接合部を有する、優れた信頼性の電子装置を実現することができる。
図10は第3の実施の形態に係る電子部品の一例を示す図である。図10には、第3の実施の形態に係る電子部品の一例の要部断面を模式的に図示している。
ここで、図11は第3の実施の形態に係る電子部品接合工程の一例を示す図である。図11(A)及び図11(B)にはそれぞれ、第3の実施の形態に係る電子部品接合工程の一例の要部断面を模式的に図示している。
図12は第4の実施の形態に係る電子装置の一例を示す図である。図12(A)には、第4の実施の形態に係る電子装置の第1構成例の要部断面を模式的に図示している。図12(B)には、第4の実施の形態に係る電子装置の第2構成例の要部断面を模式的に図示している。
図13は第5の実施の形態に係る電子装置の一例を示す図である。図13には、第5の実施の形態に係る電子装置の一例の要部断面を模式的に図示している。
尚、チップ部品110の電極111に、物質132を含有する半田131を用い、そのような物質132を含有する半田131を用いた電極111(端子)を、電子部品120の電極121と接合することもできる。
図14に示す半導体チップ200は、トランジスタ等の回路素子が設けられた半導体基板210と、半導体基板210の表面210aに設けられた配線層220とを有する。
図15(A)に示す半導体パッケージ300A、図15(B)に示す半導体パッケージ300Bは、パッケージ基板310と、パッケージ基板310上に搭載された半導体チップ320と、半導体チップ320を封止する封止層330とを有する。
図16に示す半導体パッケージ400は、樹脂層410と、樹脂層410に埋設された同種又は異種の複数(ここでは一例として2つ)の半導体チップ420と、樹脂層410の表面410aに設けられた配線層430(再配線層)とを有する。半導体パッケージ400は、擬似SoC(System on a Chip)等とも称される。
図17には、回路基板500として、複数の配線層を含む多層プリント基板を例示している。回路基板500は、Cu等の導体部511(配線、ビア等)と、導体部511を覆う樹脂材料等の絶縁部512とを有する。
また、多層プリント基板のほか、コア基板の表裏面に配線パターン及び絶縁層を積層するビルドアップ基板、コア基板にSi基板、有機基板、ガラス基板を用いるインターポーザでも同様に、表面の端子に上記のようなバンプ520を採用することが可能である。
図18には一例として、上記第1の実施の形態で述べた電子装置1を搭載したコンピュータ2aを模式的に図示している。上記物質32を含有する半田31を用いる電子装置1は、このようにコンピュータ2aに搭載することができ、また、このようなコンピュータ2aに限らず、各種電子機器に搭載することができる。
上記物質を含有する半田を用いる技術を採用することにより、優れた信頼性を有する電子装置、電子機器が実現される。
(付記1) 第1電子部品と、
前記第1電子部品と対向する第2電子部品と、
前記第1電子部品と前記第2電子部品とを接合する接合部と
を含み、
前記接合部が、動作に伴う昇降温過程で結晶構造が可逆的に変化する物質を含有する半田を含むことを特徴とする電子装置。
(付記3) 前記半田は、Sn及びBiを含有し、前記物質としてIn及びAgを含有することを特徴とする付記1又は2に記載の電子装置。
(付記5) 前記半田は、39.5重量%超の前記Snと、前記物質として3重量%以下の前記In及び3重量%以下の前記Agを含有し、残部に前記Biを含有することを特徴とする付記3に記載の電子装置。
(付記7) 前記半田の融点が227℃以下であることを特徴とする付記1乃至6のいずれかに記載の電子装置。
(付記9) 前記昇降温過程の温度範囲が0℃〜100℃であることを特徴とする付記8に記載の電子部品。
(付記11) 用いられる電子装置の動作に伴う昇降温過程で結晶構造が可逆的に変化する物質を含有することを特徴とする半田。
(付記13) 前記半田は、Sn及びBiを含有し、前記物質としてIn及びAgを含有することを特徴とする付記11又は12に記載の半田。
2 電子機器
2a コンピュータ
10,20,80,90,120 電子部品
10a,20a,80a,90a,210a,310a,410a 表面
11,21,81,91,111,121 電極
30,100a,130 接合部
31,101,131,241,361,441,521 半田
32,102,132,242,362,442,522 物質
40,50,60 相
70 Ag2In
71 結晶粒
82,92 金属間化合物
83,93 ポスト
100,240,321,360,440,520 バンプ
110 チップ部品
200,320,420 半導体チップ
210 半導体基板
211 素子分離領域
220,430 配線層
221,311,431,511 導体部
221a,311a,421,431a,511a 端子
222,312,432,512 絶縁部
230 MOSトランジスタ
231 ゲート絶縁膜
232 ゲート電極
233 ソース領域
234 ドレイン領域
235 スペーサ
300A,300B,400 半導体パッケージ
310 パッケージ基板
310b 裏面
330 封止層
341 ダイアタッチ材
342 アンダーフィル樹脂
350 ワイヤ
410 樹脂層
500 回路基板
Claims (4)
- 第1電子部品と、
前記第1電子部品と対向する第2電子部品と、
前記第1電子部品と前記第2電子部品とを接合する接合部と
を含み、
前記接合部が、動作に伴う昇降温過程で結晶構造が可逆的に変化する物質を含有する半田を含み、
前記半田は、Sn、Bi、Ag及びInを含有し、前記物質としてAg 2 Inを含有し、
前記Ag 2 Inは、動作に伴う昇温過程でγ−黄銅構造から六方最密充填構造に変態し、動作に伴う降温過程で六方最密充填構造からγ−黄銅構造に変態することを特徴とする電子装置。 - 前記昇降温過程の温度範囲が0℃〜100℃であることを特徴とする請求項1に記載の電子装置。
- 用いられる電子装置の動作に伴う昇降温過程で結晶構造が可逆的に変化する物質を含有する半田が設けられた端子を含み、
前記半田は、Sn、Bi、Ag及びInを含有し、前記物質としてAg 2 Inを含有し、
前記Ag 2 Inは、前記電子装置の動作に伴う昇温過程でγ−黄銅構造から六方最密充填構造に変態し、前記電子装置の動作に伴う降温過程で六方最密充填構造からγ−黄銅構造に変態することを特徴とする電子部品。 - Sn、Bi、Ag及びInを含有し、用いられる電子装置の動作に伴う昇降温過程で結晶構造が可逆的に変化する物質としてAg 2 Inを含有し、前記Ag 2 Inは、前記電子装置の動作に伴う昇温過程でγ−黄銅構造から六方最密充填構造に変態し、前記電子装置の動作に伴う降温過程で六方最密充填構造からγ−黄銅構造に変態することを特徴とする半田。
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