JP6556993B2 - 断面形成用途のプロセス自動化のためのパターン認識を伴う差分画像化 - Google Patents
断面形成用途のプロセス自動化のためのパターン認識を伴う差分画像化 Download PDFInfo
- Publication number
- JP6556993B2 JP6556993B2 JP2014218879A JP2014218879A JP6556993B2 JP 6556993 B2 JP6556993 B2 JP 6556993B2 JP 2014218879 A JP2014218879 A JP 2014218879A JP 2014218879 A JP2014218879 A JP 2014218879A JP 6556993 B2 JP6556993 B2 JP 6556993B2
- Authority
- JP
- Japan
- Prior art keywords
- image
- sample
- ion beam
- milling
- difference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 22
- 238000003909 pattern recognition Methods 0.000 title claims description 6
- 238000004801 process automation Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims description 80
- 238000003801 milling Methods 0.000 claims description 72
- 238000010884 ion-beam technique Methods 0.000 claims description 50
- 239000002245 particle Substances 0.000 claims description 30
- 238000004364 calculation method Methods 0.000 claims description 4
- 239000000523 sample Substances 0.000 description 120
- 239000000463 material Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 14
- 238000001878 scanning electron micrograph Methods 0.000 description 14
- 238000010894 electron beam technology Methods 0.000 description 13
- 230000009977 dual effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000003325 tomography Methods 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000004422 calculation algorithm Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 239000012472 biological sample Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000004397 blinking Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012636 effector Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001198 high resolution scanning electron microscopy Methods 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 102000006391 Ion Pumps Human genes 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000012942 design verification Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- -1 gallium ions Chemical class 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012283 microsurgical operation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/222—Image processing arrangements associated with the tube
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/44—Sample treatment involving radiation, e.g. heat
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/221—Image processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/226—Image reconstruction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/262—Non-scanning techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30466—Detecting endpoint of process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Sampling And Sample Adjustment (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361897052P | 2013-10-29 | 2013-10-29 | |
| US61/897,052 | 2013-10-29 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015111108A JP2015111108A (ja) | 2015-06-18 |
| JP2015111108A5 JP2015111108A5 (enExample) | 2018-01-11 |
| JP6556993B2 true JP6556993B2 (ja) | 2019-08-07 |
Family
ID=51945690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014218879A Expired - Fee Related JP6556993B2 (ja) | 2013-10-29 | 2014-10-28 | 断面形成用途のプロセス自動化のためのパターン認識を伴う差分画像化 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9297727B2 (enExample) |
| EP (1) | EP2869328A1 (enExample) |
| JP (1) | JP6556993B2 (enExample) |
| CN (1) | CN104795302B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6113842B2 (ja) | 2012-07-16 | 2017-04-12 | エフ・イ−・アイ・カンパニー | 集束イオン・ビーム処理の終点決定 |
| CN104795302B (zh) * | 2013-10-29 | 2018-10-02 | Fei 公司 | 具有用于横切应用的过程自动化的图案识别的差分成像 |
| JP2018511036A (ja) * | 2015-01-31 | 2018-04-19 | エフ.ホフマン−ラ ロシュ アーゲーF. Hoffmann−La Roche Aktiengesellschaft | メソダイセクションのためのシステムおよび方法 |
| EP3104155A1 (en) * | 2015-06-09 | 2016-12-14 | FEI Company | Method of analyzing surface modification of a specimen in a charged-particle microscope |
| US9576772B1 (en) | 2015-08-31 | 2017-02-21 | Fei Company | CAD-assisted TEM prep recipe creation |
| CZ306807B6 (cs) * | 2016-05-21 | 2017-07-12 | Tescan Brno, S.R.O. | Rastrovací elektronový mikroskop a způsob jeho provozu |
| EP3318862B1 (en) * | 2016-11-04 | 2019-08-21 | FEI Company | Tomography sample preparation systems and methods with improved speed, automation, and reliability |
| DE112016007379B4 (de) * | 2016-11-22 | 2025-06-18 | Hitachi High-Tech Corporation | Ladungsträgerstrahlvorrichtung und Probenbeobachtungsverfahren |
| KR102499036B1 (ko) | 2017-09-22 | 2023-02-13 | 삼성전자주식회사 | 임계 치수 측정 시스템 및 임계 치수 측정 방법 |
| JP6972157B2 (ja) * | 2017-10-16 | 2021-11-24 | 株式会社日立ハイテク | 撮像装置 |
| WO2019108166A1 (en) * | 2017-11-28 | 2019-06-06 | Hewlett-Packard Development Company, L.P. | Digital image analysis and processing for viewing by color-blind |
| CN108181624B (zh) * | 2017-12-12 | 2020-03-17 | 西安交通大学 | 一种差分计算成像装置及方法 |
| DE102018117492B3 (de) * | 2018-07-19 | 2019-10-02 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betreiben einer Mehrzahl von FIB-SEM-Systemen |
| US10811219B2 (en) * | 2018-08-07 | 2020-10-20 | Applied Materials Israel Ltd. | Method for evaluating a region of an object |
| US12165840B2 (en) | 2018-11-21 | 2024-12-10 | Techinsights Inc. | Ion beam delayering system and method, topographically enhanced delayered sample produced thereby, and imaging methods and systems related thereto |
| US11491575B2 (en) | 2019-04-16 | 2022-11-08 | Arcam Ab | Electron beam melting additive manufacturing machine with dynamic energy adjustment |
| JP7360871B2 (ja) * | 2019-09-24 | 2023-10-13 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム照射装置、及び制御方法 |
| DE102020100565A1 (de) | 2020-01-13 | 2021-07-15 | Aixtron Se | Verfahren zum Abscheiden von Schichten |
| WO2022174187A2 (en) * | 2021-02-15 | 2022-08-18 | E.A. Fischione Instruments, Inc. | System and method for uniform ion milling |
| WO2023053187A1 (ja) * | 2021-09-28 | 2023-04-06 | 株式会社日立ハイテクサイエンス | 加工方法及び荷電粒子ビーム装置 |
| US12249482B2 (en) * | 2021-12-16 | 2025-03-11 | Fei Company | Microscopy feedback for improved milling accuracy |
| US12288668B2 (en) | 2023-05-11 | 2025-04-29 | Applied Materials Israel Ltd. | Entropy based image processing for focused ion beam delayer-edge slices detection |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06181045A (ja) * | 1992-10-13 | 1994-06-28 | Hitachi Ltd | 像観察方法及び透過電子顕微鏡装置 |
| NL1022426C2 (nl) | 2003-01-17 | 2004-07-26 | Fei Co | Werkwijze voor het vervaardigen en transmissief bestralen van een preparaat alsmede deeltjes optisch systeem. |
| CA2587747C (en) | 2004-11-15 | 2013-01-08 | Fibics Incorporated | System and method for focused ion beam data analysis |
| US7388218B2 (en) | 2005-04-04 | 2008-06-17 | Fei Company | Subsurface imaging using an electron beam |
| US7535000B2 (en) * | 2006-05-23 | 2009-05-19 | Dcg Systems, Inc. | Method and system for identifying events in FIB |
| EP1890136A1 (en) * | 2006-08-16 | 2008-02-20 | FEI Company | Method for obtaining images from slices of a specimen |
| EP2149897A1 (en) | 2008-07-31 | 2010-02-03 | FEI Company | Method for milling and end-pointing a sample |
| JP5649583B2 (ja) * | 2008-10-31 | 2015-01-07 | エフ イー アイ カンパニFei Company | 加工終点検出方法及び装置 |
| EP2233907A1 (en) | 2009-03-27 | 2010-09-29 | FEI Company | Forming an image while milling a work piece |
| JP2010271117A (ja) * | 2009-05-20 | 2010-12-02 | Elpida Memory Inc | 試料の加工方法および試料の作製方法 |
| JP5739119B2 (ja) * | 2009-09-15 | 2015-06-24 | 株式会社日立ハイテクサイエンス | 断面加工観察装置 |
| US8350237B2 (en) * | 2010-03-31 | 2013-01-08 | Fei Company | Automated slice milling for viewing a feature |
| JP5969233B2 (ja) * | 2012-03-22 | 2016-08-17 | 株式会社日立ハイテクサイエンス | 断面加工観察方法及び装置 |
| JP6113842B2 (ja) | 2012-07-16 | 2017-04-12 | エフ・イ−・アイ・カンパニー | 集束イオン・ビーム処理の終点決定 |
| US10465293B2 (en) | 2012-08-31 | 2019-11-05 | Fei Company | Dose-based end-pointing for low-kV FIB milling TEM sample preparation |
| DE102012217761B4 (de) * | 2012-09-28 | 2020-02-06 | Carl Zeiss Microscopy Gmbh | Verfahren zur Vermeidung von Artefakten beim Serial Block Face Imaging |
| CN104795302B (zh) * | 2013-10-29 | 2018-10-02 | Fei 公司 | 具有用于横切应用的过程自动化的图案识别的差分成像 |
-
2014
- 2014-10-28 CN CN201410583821.2A patent/CN104795302B/zh not_active Expired - Fee Related
- 2014-10-28 EP EP20140190567 patent/EP2869328A1/en not_active Withdrawn
- 2014-10-28 JP JP2014218879A patent/JP6556993B2/ja not_active Expired - Fee Related
- 2014-10-29 US US14/526,971 patent/US9297727B2/en active Active
-
2016
- 2016-03-28 US US15/082,848 patent/US9881766B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104795302B (zh) | 2018-10-02 |
| CN104795302A (zh) | 2015-07-22 |
| US9297727B2 (en) | 2016-03-29 |
| US20160211113A1 (en) | 2016-07-21 |
| EP2869328A1 (en) | 2015-05-06 |
| JP2015111108A (ja) | 2015-06-18 |
| US9881766B2 (en) | 2018-01-30 |
| US20150136977A1 (en) | 2015-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6556993B2 (ja) | 断面形成用途のプロセス自動化のためのパターン認識を伴う差分画像化 | |
| US10529538B2 (en) | Endpointing for focused ion beam processing | |
| JP6174584B2 (ja) | 視射角ミル | |
| JP6224612B2 (ja) | 断面観察薄片の裏側薄化用の高スループットtem調製プロセスおよびハードウェア | |
| US9412559B2 (en) | Automated slice milling for viewing a feature | |
| JP5873227B2 (ja) | デコレーションを用いたスライス・アンド・ビュー | |
| JP6033180B2 (ja) | TEM試料調製における低kVFIBミリングのドーズ量ベースの終点決定 | |
| US9190243B2 (en) | Composite charged particle beam apparatus and thin sample processing method | |
| US11004651B2 (en) | Tomography-assisted TEM prep with requested intervention automation workflow | |
| JP2017069186A (ja) | Cad支援tem準備レシピ作製 | |
| US10233548B2 (en) | Charged particle beam device and sample production method | |
| US9837246B1 (en) | Reinforced sample for transmission electron microscope | |
| JP6453580B2 (ja) | 試料調製中におけるtem試料からのプローブの分離 | |
| JP6192695B2 (ja) | 自動スライス・アンド・ビュー下部切削 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171025 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171121 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180620 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180731 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20181030 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20181227 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190131 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190702 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190711 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6556993 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |