CN104795302B - 具有用于横切应用的过程自动化的图案识别的差分成像 - Google Patents

具有用于横切应用的过程自动化的图案识别的差分成像 Download PDF

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Publication number
CN104795302B
CN104795302B CN201410583821.2A CN201410583821A CN104795302B CN 104795302 B CN104795302 B CN 104795302B CN 201410583821 A CN201410583821 A CN 201410583821A CN 104795302 B CN104795302 B CN 104795302B
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China
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image
sample
difference
ion beam
create
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Expired - Fee Related
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CN201410583821.2A
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English (en)
Chinese (zh)
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CN104795302A (zh
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A.巴克斯鲍姆
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FEI Co
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FEI Co
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222Image processing arrangements associated with the tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32Polishing; Etching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/44Sample treatment involving radiation, e.g. heat
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22Treatment of data
    • H01J2237/221Image processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22Treatment of data
    • H01J2237/226Image reconstruction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/262Non-scanning techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/304Controlling tubes
    • H01J2237/30466Detecting endpoint of process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas
    • H01J2237/31745Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
CN201410583821.2A 2013-10-29 2014-10-28 具有用于横切应用的过程自动化的图案识别的差分成像 Expired - Fee Related CN104795302B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361897052P 2013-10-29 2013-10-29
US61/897052 2013-10-29

Publications (2)

Publication Number Publication Date
CN104795302A CN104795302A (zh) 2015-07-22
CN104795302B true CN104795302B (zh) 2018-10-02

Family

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CN201410583821.2A Expired - Fee Related CN104795302B (zh) 2013-10-29 2014-10-28 具有用于横切应用的过程自动化的图案识别的差分成像

Country Status (4)

Country Link
US (2) US9297727B2 (enExample)
EP (1) EP2869328A1 (enExample)
JP (1) JP6556993B2 (enExample)
CN (1) CN104795302B (enExample)

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JP6113842B2 (ja) * 2012-07-16 2017-04-12 エフ・イ−・アイ・カンパニー 集束イオン・ビーム処理の終点決定
JP6556993B2 (ja) * 2013-10-29 2019-08-07 エフ・イ−・アイ・カンパニー 断面形成用途のプロセス自動化のためのパターン認識を伴う差分画像化
WO2016120434A1 (en) * 2015-01-31 2016-08-04 Roche Diagnostics Gmbh Systems and methods for meso-dissection
CN107209092A (zh) * 2015-01-31 2017-09-26 豪夫迈·罗氏有限公司 用于中间解剖的系统和方法
EP3104155A1 (en) * 2015-06-09 2016-12-14 FEI Company Method of analyzing surface modification of a specimen in a charged-particle microscope
US9576772B1 (en) 2015-08-31 2017-02-21 Fei Company CAD-assisted TEM prep recipe creation
CZ2016300A3 (cs) * 2016-05-21 2017-07-12 Tescan Brno, S.R.O. Rastrovací elektronový mikroskop a způsob jeho provozu
EP3318862B1 (en) * 2016-11-04 2019-08-21 FEI Company Tomography sample preparation systems and methods with improved speed, automation, and reliability
DE112016007379B4 (de) 2016-11-22 2025-06-18 Hitachi High-Tech Corporation Ladungsträgerstrahlvorrichtung und Probenbeobachtungsverfahren
KR102499036B1 (ko) 2017-09-22 2023-02-13 삼성전자주식회사 임계 치수 측정 시스템 및 임계 치수 측정 방법
WO2019077650A1 (ja) * 2017-10-16 2019-04-25 株式会社日立ハイテクノロジーズ 撮像装置
EP3718084A4 (en) * 2017-11-28 2021-07-21 Hewlett-Packard Development Company, L.P. DIGITAL IMAGE ANALYSIS AND PROCESSING FOR VIEWING THROUGH COLOR BLIND
CN108181624B (zh) * 2017-12-12 2020-03-17 西安交通大学 一种差分计算成像装置及方法
DE102018117492B3 (de) * 2018-07-19 2019-10-02 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben einer Mehrzahl von FIB-SEM-Systemen
US10811219B2 (en) * 2018-08-07 2020-10-20 Applied Materials Israel Ltd. Method for evaluating a region of an object
EP3884264A4 (en) * 2018-11-21 2022-08-03 Techinsights Inc. ION BEAM DESCOATING SYSTEM AND METHODS, TOPOGRAPHICALLY ENHANCED DESCOATED SAMPLE PRODUCED BY THE RESULTS, AND RELATED IMAGING METHODS AND SYSTEMS
US11491575B2 (en) 2019-04-16 2022-11-08 Arcam Ab Electron beam melting additive manufacturing machine with dynamic energy adjustment
JP7360871B2 (ja) * 2019-09-24 2023-10-13 株式会社日立ハイテクサイエンス 荷電粒子ビーム照射装置、及び制御方法
DE102020100565A1 (de) 2020-01-13 2021-07-15 Aixtron Se Verfahren zum Abscheiden von Schichten
EP4292115A4 (en) * 2021-02-15 2025-06-25 E.A. Fischione Instruments, Inc. System and method for uniform ion milling
JP7611414B2 (ja) * 2021-09-28 2025-01-09 株式会社日立ハイテクサイエンス 加工方法及び荷電粒子ビーム装置
US12249482B2 (en) * 2021-12-16 2025-03-11 Fei Company Microscopy feedback for improved milling accuracy
US12288668B2 (en) * 2023-05-11 2025-04-29 Applied Materials Israel Ltd. Entropy based image processing for focused ion beam delayer-edge slices detection

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CN102207472A (zh) * 2010-03-31 2011-10-05 Fei公司 用于观察特征的自动化片状铣削

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US7897918B2 (en) * 2004-11-15 2011-03-01 DCG Systems System and method for focused ion beam data analysis
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EP1890136A1 (en) * 2006-08-16 2008-02-20 FEI Company Method for obtaining images from slices of a specimen
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US8170832B2 (en) * 2008-10-31 2012-05-01 Fei Company Measurement and endpointing of sample thickness
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JP2010271117A (ja) * 2009-05-20 2010-12-02 Elpida Memory Inc 試料の加工方法および試料の作製方法
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JP5969233B2 (ja) * 2012-03-22 2016-08-17 株式会社日立ハイテクサイエンス 断面加工観察方法及び装置
JP6113842B2 (ja) 2012-07-16 2017-04-12 エフ・イ−・アイ・カンパニー 集束イオン・ビーム処理の終点決定
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CN102207472A (zh) * 2010-03-31 2011-10-05 Fei公司 用于观察特征的自动化片状铣削

Also Published As

Publication number Publication date
US9297727B2 (en) 2016-03-29
US20150136977A1 (en) 2015-05-21
EP2869328A1 (en) 2015-05-06
US9881766B2 (en) 2018-01-30
CN104795302A (zh) 2015-07-22
JP2015111108A (ja) 2015-06-18
JP6556993B2 (ja) 2019-08-07
US20160211113A1 (en) 2016-07-21

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Termination date: 20201028