CN104795302B - 具有用于横切应用的过程自动化的图案识别的差分成像 - Google Patents

具有用于横切应用的过程自动化的图案识别的差分成像 Download PDF

Info

Publication number
CN104795302B
CN104795302B CN201410583821.2A CN201410583821A CN104795302B CN 104795302 B CN104795302 B CN 104795302B CN 201410583821 A CN201410583821 A CN 201410583821A CN 104795302 B CN104795302 B CN 104795302B
Authority
CN
China
Prior art keywords
image
sample
difference
ion beam
create
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410583821.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN104795302A (zh
Inventor
A.巴克斯鲍姆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Publication of CN104795302A publication Critical patent/CN104795302A/zh
Application granted granted Critical
Publication of CN104795302B publication Critical patent/CN104795302B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222Image processing arrangements associated with the tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32Polishing; Etching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/44Sample treatment involving radiation, e.g. heat
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22Treatment of data
    • H01J2237/221Image processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22Treatment of data
    • H01J2237/226Image reconstruction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/262Non-scanning techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/304Controlling tubes
    • H01J2237/30466Detecting endpoint of process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas
    • H01J2237/31745Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
CN201410583821.2A 2013-10-29 2014-10-28 具有用于横切应用的过程自动化的图案识别的差分成像 Expired - Fee Related CN104795302B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361897052P 2013-10-29 2013-10-29
US61/897052 2013-10-29

Publications (2)

Publication Number Publication Date
CN104795302A CN104795302A (zh) 2015-07-22
CN104795302B true CN104795302B (zh) 2018-10-02

Family

ID=51945690

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410583821.2A Expired - Fee Related CN104795302B (zh) 2013-10-29 2014-10-28 具有用于横切应用的过程自动化的图案识别的差分成像

Country Status (4)

Country Link
US (2) US9297727B2 (enExample)
EP (1) EP2869328A1 (enExample)
JP (1) JP6556993B2 (enExample)
CN (1) CN104795302B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6113842B2 (ja) 2012-07-16 2017-04-12 エフ・イ−・アイ・カンパニー 集束イオン・ビーム処理の終点決定
CN104795302B (zh) * 2013-10-29 2018-10-02 Fei 公司 具有用于横切应用的过程自动化的图案识别的差分成像
JP2018511036A (ja) * 2015-01-31 2018-04-19 エフ.ホフマン−ラ ロシュ アーゲーF. Hoffmann−La Roche Aktiengesellschaft メソダイセクションのためのシステムおよび方法
EP3104155A1 (en) * 2015-06-09 2016-12-14 FEI Company Method of analyzing surface modification of a specimen in a charged-particle microscope
US9576772B1 (en) 2015-08-31 2017-02-21 Fei Company CAD-assisted TEM prep recipe creation
CZ306807B6 (cs) * 2016-05-21 2017-07-12 Tescan Brno, S.R.O. Rastrovací elektronový mikroskop a způsob jeho provozu
EP3318862B1 (en) * 2016-11-04 2019-08-21 FEI Company Tomography sample preparation systems and methods with improved speed, automation, and reliability
DE112016007379B4 (de) * 2016-11-22 2025-06-18 Hitachi High-Tech Corporation Ladungsträgerstrahlvorrichtung und Probenbeobachtungsverfahren
KR102499036B1 (ko) 2017-09-22 2023-02-13 삼성전자주식회사 임계 치수 측정 시스템 및 임계 치수 측정 방법
JP6972157B2 (ja) * 2017-10-16 2021-11-24 株式会社日立ハイテク 撮像装置
WO2019108166A1 (en) * 2017-11-28 2019-06-06 Hewlett-Packard Development Company, L.P. Digital image analysis and processing for viewing by color-blind
CN108181624B (zh) * 2017-12-12 2020-03-17 西安交通大学 一种差分计算成像装置及方法
DE102018117492B3 (de) * 2018-07-19 2019-10-02 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben einer Mehrzahl von FIB-SEM-Systemen
US10811219B2 (en) * 2018-08-07 2020-10-20 Applied Materials Israel Ltd. Method for evaluating a region of an object
US12165840B2 (en) 2018-11-21 2024-12-10 Techinsights Inc. Ion beam delayering system and method, topographically enhanced delayered sample produced thereby, and imaging methods and systems related thereto
US11491575B2 (en) 2019-04-16 2022-11-08 Arcam Ab Electron beam melting additive manufacturing machine with dynamic energy adjustment
JP7360871B2 (ja) * 2019-09-24 2023-10-13 株式会社日立ハイテクサイエンス 荷電粒子ビーム照射装置、及び制御方法
DE102020100565A1 (de) 2020-01-13 2021-07-15 Aixtron Se Verfahren zum Abscheiden von Schichten
WO2022174187A2 (en) * 2021-02-15 2022-08-18 E.A. Fischione Instruments, Inc. System and method for uniform ion milling
WO2023053187A1 (ja) * 2021-09-28 2023-04-06 株式会社日立ハイテクサイエンス 加工方法及び荷電粒子ビーム装置
US12249482B2 (en) * 2021-12-16 2025-03-11 Fei Company Microscopy feedback for improved milling accuracy
US12288668B2 (en) 2023-05-11 2025-04-29 Applied Materials Israel Ltd. Entropy based image processing for focused ion beam delayer-edge slices detection

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436449A (en) * 1992-10-13 1995-07-25 Hitachi, Ltd. Transmission electron microscope and method of observing magnetic phenomena using its apparatus
CN102207472A (zh) * 2010-03-31 2011-10-05 Fei公司 用于观察特征的自动化片状铣削

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1022426C2 (nl) 2003-01-17 2004-07-26 Fei Co Werkwijze voor het vervaardigen en transmissief bestralen van een preparaat alsmede deeltjes optisch systeem.
CA2587747C (en) 2004-11-15 2013-01-08 Fibics Incorporated System and method for focused ion beam data analysis
US7388218B2 (en) 2005-04-04 2008-06-17 Fei Company Subsurface imaging using an electron beam
US7535000B2 (en) * 2006-05-23 2009-05-19 Dcg Systems, Inc. Method and system for identifying events in FIB
EP1890136A1 (en) * 2006-08-16 2008-02-20 FEI Company Method for obtaining images from slices of a specimen
EP2149897A1 (en) 2008-07-31 2010-02-03 FEI Company Method for milling and end-pointing a sample
JP5649583B2 (ja) * 2008-10-31 2015-01-07 エフ イー アイ カンパニFei Company 加工終点検出方法及び装置
EP2233907A1 (en) 2009-03-27 2010-09-29 FEI Company Forming an image while milling a work piece
JP2010271117A (ja) * 2009-05-20 2010-12-02 Elpida Memory Inc 試料の加工方法および試料の作製方法
JP5739119B2 (ja) * 2009-09-15 2015-06-24 株式会社日立ハイテクサイエンス 断面加工観察装置
JP5969233B2 (ja) * 2012-03-22 2016-08-17 株式会社日立ハイテクサイエンス 断面加工観察方法及び装置
JP6113842B2 (ja) 2012-07-16 2017-04-12 エフ・イ−・アイ・カンパニー 集束イオン・ビーム処理の終点決定
US10465293B2 (en) 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
DE102012217761B4 (de) * 2012-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zur Vermeidung von Artefakten beim Serial Block Face Imaging
CN104795302B (zh) * 2013-10-29 2018-10-02 Fei 公司 具有用于横切应用的过程自动化的图案识别的差分成像

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436449A (en) * 1992-10-13 1995-07-25 Hitachi, Ltd. Transmission electron microscope and method of observing magnetic phenomena using its apparatus
CN102207472A (zh) * 2010-03-31 2011-10-05 Fei公司 用于观察特征的自动化片状铣削

Also Published As

Publication number Publication date
CN104795302A (zh) 2015-07-22
US9297727B2 (en) 2016-03-29
US20160211113A1 (en) 2016-07-21
EP2869328A1 (en) 2015-05-06
JP2015111108A (ja) 2015-06-18
JP6556993B2 (ja) 2019-08-07
US9881766B2 (en) 2018-01-30
US20150136977A1 (en) 2015-05-21

Similar Documents

Publication Publication Date Title
CN104795302B (zh) 具有用于横切应用的过程自动化的图案识别的差分成像
US10529538B2 (en) Endpointing for focused ion beam processing
US10283317B2 (en) High throughput TEM preparation processes and hardware for backside thinning of cross-sectional view lamella
JP6174584B2 (ja) 視射角ミル
US8759802B2 (en) Automated slice milling for viewing a feature
US11004651B2 (en) Tomography-assisted TEM prep with requested intervention automation workflow
US11694322B2 (en) Method and system for imaging three-dimensional feature
KR20170026298A (ko) Cad 지원 tem 샘플 제작 레시피 생성
US20060249692A1 (en) Composite charged particle beam apparatus and an irradiation alignment method in it
JPWO2019207668A1 (ja) 荷電粒子線装置の照射条件決定方法、及び荷電粒子線装置
US6924481B2 (en) Scanning microscope with brightness control
JPH03272554A (ja) 断面観察用走査型電子顕微鏡およびそれを用いた断面観察方法
US12456186B2 (en) Method and system for preparing wedged lamella

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20181002

Termination date: 20201028