JP6556673B2 - フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置 - Google Patents

フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置 Download PDF

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Publication number
JP6556673B2
JP6556673B2 JP2016146741A JP2016146741A JP6556673B2 JP 6556673 B2 JP6556673 B2 JP 6556673B2 JP 2016146741 A JP2016146741 A JP 2016146741A JP 2016146741 A JP2016146741 A JP 2016146741A JP 6556673 B2 JP6556673 B2 JP 6556673B2
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Japan
Prior art keywords
data
photomask substrate
photomask
stage
inspection
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JP2016146741A
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Japanese (ja)
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JP2018017833A (ja
Inventor
寿美 寺田
寿美 寺田
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Hoya Corp
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Hoya Corp
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Priority to JP2016146741A priority Critical patent/JP6556673B2/ja
Priority to TW106123942A priority patent/TWI705293B/zh
Priority to CN201710585047.2A priority patent/CN107656420A/zh
Priority to KR1020170092598A priority patent/KR102232151B1/ko
Publication of JP2018017833A publication Critical patent/JP2018017833A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2016146741A 2016-07-26 2016-07-26 フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置 Active JP6556673B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016146741A JP6556673B2 (ja) 2016-07-26 2016-07-26 フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置
TW106123942A TWI705293B (zh) 2016-07-26 2017-07-18 光罩之製造方法、描繪裝置、顯示裝置之製造方法、光罩基板之檢查方法、及光罩基板之檢查裝置
CN201710585047.2A CN107656420A (zh) 2016-07-26 2017-07-18 光掩模及显示装置的制造方法、光掩模基板的检查方法及装置
KR1020170092598A KR102232151B1 (ko) 2016-07-26 2017-07-21 포토마스크의 제조 방법, 묘화 장치, 표시 장치의 제조 방법, 포토마스크 기판의 검사 방법 및 포토마스크 기판의 검사 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016146741A JP6556673B2 (ja) 2016-07-26 2016-07-26 フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置

Publications (2)

Publication Number Publication Date
JP2018017833A JP2018017833A (ja) 2018-02-01
JP6556673B2 true JP6556673B2 (ja) 2019-08-07

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JP2016146741A Active JP6556673B2 (ja) 2016-07-26 2016-07-26 フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置

Country Status (4)

Country Link
JP (1) JP6556673B2 (zh)
KR (1) KR102232151B1 (zh)
CN (1) CN107656420A (zh)
TW (1) TWI705293B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110426913A (zh) * 2019-06-27 2019-11-08 北海惠科光电技术有限公司 掩膜板的制备方法、掩膜板及阵列基板

Family Cites Families (19)

* Cited by examiner, † Cited by third party
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JPH10161296A (ja) * 1996-12-02 1998-06-19 Ishikawajima Harima Heavy Ind Co Ltd レーザレチクル描画装置の座標歪み補正方法
US6847433B2 (en) * 2001-06-01 2005-01-25 Agere Systems, Inc. Holder, system, and process for improving overlay in lithography
JP4005910B2 (ja) * 2002-12-27 2007-11-14 株式会社東芝 パターン描画方法及び描画装置
JP5087258B2 (ja) * 2005-11-04 2012-12-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、荷電粒子ビーム描画装置、位置ずれ量計測方法及び位置計測装置
JP4634992B2 (ja) * 2005-11-04 2011-02-16 株式会社ニューフレアテクノロジー 位置計測装置及び位置ずれ量計測方法
JP5331638B2 (ja) 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置
CN102608859B (zh) * 2011-01-21 2017-02-01 京东方科技集团股份有限公司 掩模板及应用其制造薄膜晶体管阵列基板的方法
JP5497693B2 (ja) * 2011-06-10 2014-05-21 Ｈｏｙａ株式会社 フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法
JP5816499B2 (ja) * 2011-09-12 2015-11-18 ルネサスエレクトロニクス株式会社 Ｅｕｖマスクの製造方法
JP5739375B2 (ja) * 2012-05-16 2015-06-24 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法
JP5635577B2 (ja) * 2012-09-26 2014-12-03 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
KR101473163B1 (ko) * 2013-07-26 2014-12-16 주식회사 에스앤에스텍 플랫 패널 디스플레이용 블랭크 마스크 및 포토 마스크
JP5970021B2 (ja) * 2013-08-20 2016-08-17 Hoya株式会社 フォトマスクの製造方法、描画装置、フォトマスクの検査方法、フォトマスクの検査装置、及び表示装置の製造方法
JP6150299B2 (ja) * 2014-03-30 2017-06-21 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
US9618836B2 (en) * 2014-04-22 2017-04-11 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production
JP6524614B2 (ja) * 2014-05-27 2019-06-05 大日本印刷株式会社 マスクブランクス、ネガ型レジスト膜付きマスクブランクス、位相シフトマスク、およびそれを用いるパターン形成体の製造方法
JP2016018139A (ja) * 2014-07-10 2016-02-01 株式会社ディスコ 露光マスクの製造方法
TWI604267B (zh) * 2014-12-17 2017-11-01 Ｈｏｙａ股份有限公司 光罩之製造方法及顯示裝置之製造方法
TWI617611B (zh) * 2014-12-31 2018-03-11 羅門哈斯電子材料有限公司 光致抗蝕劑圖案修整組合物及方法

Also Published As

Publication number Publication date
JP2018017833A (ja) 2018-02-01
KR102232151B1 (ko) 2021-03-24
TW201812433A (zh) 2018-04-01
KR20180012214A (ko) 2018-02-05
CN107656420A (zh) 2018-02-02
TWI705293B (zh) 2020-09-21

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