JP6556673B2 - フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置 - Google Patents
フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置 Download PDFInfo
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- JP6556673B2 JP6556673B2 JP2016146741A JP2016146741A JP6556673B2 JP 6556673 B2 JP6556673 B2 JP 6556673B2 JP 2016146741 A JP2016146741 A JP 2016146741A JP 2016146741 A JP2016146741 A JP 2016146741A JP 6556673 B2 JP6556673 B2 JP 6556673B2
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- 238000007689 inspection Methods 0.000 title claims description 259
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- 238000013461 design Methods 0.000 claims description 166
- 238000012546 transfer Methods 0.000 claims description 139
- 239000010408 film Substances 0.000 claims description 138
- 239000002131 composite material Substances 0.000 claims description 51
- 239000010409 thin film Substances 0.000 claims description 41
- 238000003860 storage Methods 0.000 claims description 40
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- 238000000059 patterning Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 12
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- 238000005259 measurement Methods 0.000 description 79
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- 238000004364 calculation method Methods 0.000 description 9
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- 238000010894 electron beam technology Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016146741A JP6556673B2 (ja) | 2016-07-26 | 2016-07-26 | フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置 |
TW106123942A TWI705293B (zh) | 2016-07-26 | 2017-07-18 | 光罩之製造方法、描繪裝置、顯示裝置之製造方法、光罩基板之檢查方法、及光罩基板之檢查裝置 |
CN201710585047.2A CN107656420A (zh) | 2016-07-26 | 2017-07-18 | 光掩模及显示装置的制造方法、光掩模基板的检查方法及装置 |
KR1020170092598A KR102232151B1 (ko) | 2016-07-26 | 2017-07-21 | 포토마스크의 제조 방법, 묘화 장치, 표시 장치의 제조 방법, 포토마스크 기판의 검사 방법 및 포토마스크 기판의 검사 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016146741A JP6556673B2 (ja) | 2016-07-26 | 2016-07-26 | フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018017833A JP2018017833A (ja) | 2018-02-01 |
JP6556673B2 true JP6556673B2 (ja) | 2019-08-07 |
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JP2016146741A Active JP6556673B2 (ja) | 2016-07-26 | 2016-07-26 | フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6556673B2 (zh) |
KR (1) | KR102232151B1 (zh) |
CN (1) | CN107656420A (zh) |
TW (1) | TWI705293B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110426913A (zh) * | 2019-06-27 | 2019-11-08 | 北海惠科光电技术有限公司 | 掩膜板的制备方法、掩膜板及阵列基板 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10161296A (ja) * | 1996-12-02 | 1998-06-19 | Ishikawajima Harima Heavy Ind Co Ltd | レーザレチクル描画装置の座標歪み補正方法 |
US6847433B2 (en) * | 2001-06-01 | 2005-01-25 | Agere Systems, Inc. | Holder, system, and process for improving overlay in lithography |
JP4005910B2 (ja) * | 2002-12-27 | 2007-11-14 | 株式会社東芝 | パターン描画方法及び描画装置 |
JP5087258B2 (ja) * | 2005-11-04 | 2012-12-05 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法、荷電粒子ビーム描画装置、位置ずれ量計測方法及び位置計測装置 |
JP4634992B2 (ja) * | 2005-11-04 | 2011-02-16 | 株式会社ニューフレアテクノロジー | 位置計測装置及び位置ずれ量計測方法 |
JP5331638B2 (ja) | 2008-11-04 | 2013-10-30 | Hoya株式会社 | 表示装置製造用フォトマスクの製造方法及び描画装置 |
CN102608859B (zh) * | 2011-01-21 | 2017-02-01 | 京东方科技集团股份有限公司 | 掩模板及应用其制造薄膜晶体管阵列基板的方法 |
JP5497693B2 (ja) * | 2011-06-10 | 2014-05-21 | Hoya株式会社 | フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法 |
JP5816499B2 (ja) * | 2011-09-12 | 2015-11-18 | ルネサスエレクトロニクス株式会社 | Euvマスクの製造方法 |
JP5739375B2 (ja) * | 2012-05-16 | 2015-06-24 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法 |
JP5635577B2 (ja) * | 2012-09-26 | 2014-12-03 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
KR101473163B1 (ko) * | 2013-07-26 | 2014-12-16 | 주식회사 에스앤에스텍 | 플랫 패널 디스플레이용 블랭크 마스크 및 포토 마스크 |
JP5970021B2 (ja) * | 2013-08-20 | 2016-08-17 | Hoya株式会社 | フォトマスクの製造方法、描画装置、フォトマスクの検査方法、フォトマスクの検査装置、及び表示装置の製造方法 |
JP6150299B2 (ja) * | 2014-03-30 | 2017-06-21 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
US9618836B2 (en) * | 2014-04-22 | 2017-04-11 | Asahi Glass Company, Limited | Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production |
JP6524614B2 (ja) * | 2014-05-27 | 2019-06-05 | 大日本印刷株式会社 | マスクブランクス、ネガ型レジスト膜付きマスクブランクス、位相シフトマスク、およびそれを用いるパターン形成体の製造方法 |
JP2016018139A (ja) * | 2014-07-10 | 2016-02-01 | 株式会社ディスコ | 露光マスクの製造方法 |
TWI604267B (zh) * | 2014-12-17 | 2017-11-01 | Hoya股份有限公司 | 光罩之製造方法及顯示裝置之製造方法 |
TWI617611B (zh) * | 2014-12-31 | 2018-03-11 | 羅門哈斯電子材料有限公司 | 光致抗蝕劑圖案修整組合物及方法 |
-
2016
- 2016-07-26 JP JP2016146741A patent/JP6556673B2/ja active Active
-
2017
- 2017-07-18 CN CN201710585047.2A patent/CN107656420A/zh active Pending
- 2017-07-18 TW TW106123942A patent/TWI705293B/zh active
- 2017-07-21 KR KR1020170092598A patent/KR102232151B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2018017833A (ja) | 2018-02-01 |
KR102232151B1 (ko) | 2021-03-24 |
TW201812433A (zh) | 2018-04-01 |
KR20180012214A (ko) | 2018-02-05 |
CN107656420A (zh) | 2018-02-02 |
TWI705293B (zh) | 2020-09-21 |
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